la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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PDF
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transistor s46
Abstract: marking S46 sot89 PBSS4350X PBSS5350X
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low VCEsat BISS transistor Product specification Supersedes data of 2003 Nov 21 2004 Nov 04 Philips Semiconductors Product specification 50 V, 3 A PNP low VCEsat (BISS) transistor
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M3D109
PBSS5350X
SC-62)
SCA76
R75/03/pp12
transistor s46
marking S46 sot89
PBSS4350X
PBSS5350X
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transistor s46
Abstract: marking code s46 PBSS4350x PBSS5350X
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low VCEsat BISS transistor Product specification Supersedes data of 2003 Jun 24 2003 Nov 21 Philips Semiconductors Product specification 50 V, 3 A PNP low VCEsat (BISS) transistor
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M3D109
PBSS5350X
SC-62)
SCA75
R75/02/pp11
transistor s46
marking code s46
PBSS4350x
PBSS5350X
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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transistor s46
Abstract: marking S46 sot89 MLE186 PBSS5350 MLE168 MLE170 free transistor equivalent book
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low VCEsat BISS transistor Product specification 2003 Jun 24 Philips Semiconductors Product specification 50 V, 3 A PNP low VCEsat (BISS) transistor PBSS5350X FEATURES QUICK REFERENCE DATA
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M3D109
PBSS5350X
SC-62)
SCA75
613514/01/pp12
transistor s46
marking S46 sot89
MLE186
PBSS5350
MLE168
MLE170
free transistor equivalent book
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Nov 21 2004 Nov 04 NXP Semiconductors Product data sheet 50 V, 3 A PNP low VCEsat (BISS) transistor PBSS5350X
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M3D109
PBSS5350X
SC-62)
R75/03/pp12
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PDF
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transistor s46
Abstract: SC6210 marking S46 sot89 PBSS4350x PBSS5350X Sc-6210 marking code s46
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Nov 21 2004 Nov 04 NXP Semiconductors Product data sheet 50 V, 3 A PNP low VCEsat (BISS) transistor PBSS5350X
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M3D109
PBSS5350X
SC-62)
R75/03/pp12
transistor s46
SC6210
marking S46 sot89
PBSS4350x
PBSS5350X
Sc-6210
marking code s46
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Untitled
Abstract: No abstract text available
Text: KS621220A7 Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S Í O Q I b D d r lin Q t O P Transistor Module 200 Amperes/1200 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power
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KS621220A7
Amperes/1200
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transistor s46
Abstract: KS621220A7 s45 diode DIODE S45 powerex ks62
Text: m/mac KS621220A7 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S lt lQ lG D S r H t lC jt O n Transistor Module 200 Amperes/1200 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power
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KS621220A7
Amperes/1200
transistor s46
KS621220A7
s45 diode
DIODE S45
powerex ks62
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BSS98
Abstract: ss98 transistor siemens ss98
Text: SIEMENS BSS98 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = -0.8.-1.6 V Type hi 0.3 A BSS98 Vqs 50 V Type BSS98 BSS98 BSS98 BSS98 Ordering Code Q67000-S464 Q62702-S053 Q62702-S517 Q62702-S635 flbs(on)
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BSS98
BSS98
Q67000-S464
Q62702-S053
Q62702-S517
Q62702-S635
ss98 transistor
siemens ss98
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BSS95
Abstract: BSS 95 siemens transistor bss S 437 Diode
Text: SIEMENS SIPMOS Small-Signal Transistor BSS 95 = 240 V = 0.8 A ^DSIon = 8-0 Q VDS TO-202 /D • N channel • Enhancement mode • Package: TO -202') Type Ordering code for version in bulk BSS 95 Q62702-S461 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage
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O-202
Q62702-S461
BSS95
BSS 95 siemens
transistor bss
S 437 Diode
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BSS97
Abstract: bss 97 transistor BSS 97 Q62702-S463
Text: S IE M E N S SIPMOS" Small-Signal Transistor VDS /D BSS 97 = 200 V = 1 .5 A ^DS on = 2 .0 Q • N channel • Enhancement mode • Package: T O -202’ ) Type Ordering code for version in bulk BSS 97 Q62702-S463 Maximum Ratings Parameter Symbol Values Unit
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Q62702-S463
BSS97
bss 97 transistor
BSS 97
Q62702-S463
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BSS97
Abstract: BSS 97 bss 97 transistor LC-R121R3P GPT05576 transistor bss
Text: SIEMENS SIPMOS Small-Signal Transistor VDS I D = 200 V = 1 .5 A ^ D S o n • • • BSS 97 = 2.0 Q N channel Enhancement mode Package: TO-202 ’ > Not for new design! Type O rdering code for version in bulk • BSS 97 Q 62702-S463 Maxim um Ratings
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O-202'
GPT05576
62702-S463
SIK02261
a23SbOS
BSS97
BSS 97
bss 97 transistor
LC-R121R3P
GPT05576
transistor bss
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BSS95
Abstract: transistor s461 Transistor bss BSS 95 siemens
Text: SIEMENS SIPMOS Small-Signal Transistor VDS I o BSS 95 = 240 V = 0 .8 A ^DS on = 6-0 ß • • • N channel Enhancement mode Package: TO-202 1> Not for new design! Type Ordering code for version in bulk • BSS 95 Q 62702-S461 Maxim um Ratings Sym bol
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O-202
62702-S461
flS35b05
0054E74
BSS95
transistor s461
Transistor bss
BSS 95 siemens
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Untitled
Abstract: No abstract text available
Text: Jeiizu ^£.mi-L.onaiLctoi , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1073 Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown VoltageV(BR)CEo=-160V(Min)
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2SA1073
-160V
2SC2523
-160V;
10MHz
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Untitled
Abstract: No abstract text available
Text: J.S.11.S.Ut/ ^zmi-donauctoi L/^ioaucti, One. CX TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUY52A Silicon NPN Power Transistor DESCRIPTION • High Current Capability • Fast Switching Speed
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BUY52A
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IR s27
Abstract: infrared led receiver s28 transistor s46 IR s28 transistor s19 infrared remote switch infrared led receiver transistor s49 TRANSISTOR S28 s16 transistor
Text: Infrared Remote Controller HT48RA0-5 Integrated Oscillator and NMOS Driver Characteristics Fully integrated system oscillator and N-MOSFET driver. No need for external resonator, 2 capacitors and transistor, increasing product competitive advantages. Adjustable programming - suitable for different remote code formats.
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HT48RA0-5
HT622x)
HT48RA0-5
20SSOP)
IR s27
infrared led receiver s28
transistor s46
IR s28
transistor s19
infrared remote switch
infrared led receiver
transistor s49
TRANSISTOR S28
s16 transistor
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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SMD10P06
Abstract: No abstract text available
Text: SMD10P06 P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) IDa (A) –60 0.28 @ VGS = 10 V "10 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SMD10P06 D P-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
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SMD10P06
O-252
17tings
S-46848--Rev.
26-Feb-96
SMD10P06
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SMD10P06
Abstract: No abstract text available
Text: SMD10P06 P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) IDa (A) –60 0.28 @ VGS = 10 V "10 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SMD10P06 D P-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
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SMD10P06
O-252
17tings
S-46848--Rev.
26-Feb-96
SMD10P06
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SMD15N06
Abstract: No abstract text available
Text: SMD15N06 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) IDa (A) 60 0.10 @ VGS = 10 V 15 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SMD15N06 S N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
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SMD15N06
O-252
S-46849--Rev.
26-Feb-96
SMD15N06
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SMD15N06
Abstract: No abstract text available
Text: SMD15N06 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) IDa (A) 60 0.10 @ VGS = 10 V 15 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SMD15N06 S N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
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SMD15N06
O-252
S-46849--Rev.
26-Feb-96
SMD15N06
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Untitled
Abstract: No abstract text available
Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BDY55 Silicon NPN Power Transistor DESCRIPTION • Excellent Safe Operating Area • DC Current Gain: hFE=20-70@lc = 4A • Collector-Emitter Saturation Voltage:VCE(sa,)=1.1 V(Max)@l c = 4A
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BDY55
10MHz
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Untitled
Abstract: No abstract text available
Text: Temic SMD15N06 Semiconductors N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) 60 rDS(on) (Q ) 0.10 @ VGS= 10 V IDa (A) 15 D Q TO-252 Drain Connected to Tab G D S Top View Order Number: SMD15N06 6 s N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)
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SMD15N06
O-252
S-46849â
26-Feb-96
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