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    TRANSISTOR S59 Search Results

    TRANSISTOR S59 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S59 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: KS621230A7 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S IH Q IG D d f l in Q t O n Transistor Module 300 Amperes/1200 Volts O U T L IN E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power


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    KS621230A7 Amperes/1200 PDF

    transistor S59

    Abstract: KS621230A7 transistor b 1417 S-60 transistor S57 powerex ks62
    Text: m U E R E X KS621230A7 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S in Q lB D S f H n g t O f l Transistor Module 300 Amperes/1200 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power


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    KS621230A7_ Amperes/1200 transistor S59 KS621230A7 transistor b 1417 S-60 transistor S57 powerex ks62 PDF

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium


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    BFU590Q BFU590Q AEC-Q101 BFU590QX PDF

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium


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    BFU590Q BFU590Q AEC-Q101 PDF

    FJY3009R

    Abstract: FJY4009R
    Text: FJY4009R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R=4.7KΩ • Complement to FJY3009R Eqivalent Circuit C C S59 E B E B SOT - 523F Absolute Maximum Ratings *


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    FJY4009R FJY3009R FJY3009R FJY4009R PDF

    transistor S59

    Abstract: FJY3009R FJY4009R
    Text: FJY4009R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R=4.7KΩ • Complement to FJY3009R Equivalent Circuit C C S59 E B E B SOT - 523F Absolute Maximum Ratings *


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    FJY4009R FJY3009R transistor S59 FJY3009R FJY4009R PDF

    transistor S59

    Abstract: Transistor Equivalent list FJY3009R FJY4009R
    Text: FJY4009R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R=4.7KΩ • Complement to FJY3009R Equivalent Circuit C C S59 E B E B SOT - 523F Absolute Maximum Ratings *


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    FJY4009R FJY3009R transistor S59 Transistor Equivalent list FJY3009R FJY4009R PDF

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC T3 D • 0504330 0G037G5 b ■ T-91-01 PROCESS JLA Process JLA NPN Small-Signal Transistor P ro c e ss J L A is a double-diffused epitaxial planar N P N silicon device. It is d esign ed for u se in generalp urp ose amplifier and high-current switching circuits.


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    0SD433Ã DDD37DS T-91-01 800mA D37Db T-91-Q1 PDF

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


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    TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485 PDF

    TRANSISTOR C 557 B

    Abstract: transistor bc 557 c le B 557 PNP TRANSISTOR 8C556 transistor B 560 nf21 BC558 pnp transistor BC 558 transistor BC546 pnp bc559 transistor
    Text: PNP EPITAXIAL SILICON TRANSISTO R BC556/557/558/S59/560 SWITCHING AND AMPLIFIER • HIGH VOLTAGE: 8C556, Veto* -65V • LOW NOISE: BC559, BC560 • Complement to BC546 . BC 550 TO-92 ABSO LUTE MAXIMUM RATINGS T a = 2 5 1 C Sym bol Characteristic Collector-Base Capacitance


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    BC556/557/558/S59/560 8C556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 TRANSISTOR C 557 B transistor bc 557 c le B 557 PNP TRANSISTOR 8C556 transistor B 560 nf21 BC558 pnp transistor BC 558 transistor BC546 pnp bc559 transistor PDF

    S594TX

    Abstract: S594TXR S594TXRW TRANSISTOR SMD MARKING g1
    Text: S594TX/S594TXR/S594TXRW Vishay Telefunken MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and


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    S594TX/S594TXR/S594TXRW S594TX D-74025 05-Jun-01 S594TXR S594TXRW TRANSISTOR SMD MARKING g1 PDF

    S594TX

    Abstract: S594TXR S594TXRW
    Text: S594TX/S594TXR/S594TXRW Vishay Semiconductors MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and


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    S594TX/S594TXR/S594TXRW S594TX D-74025 05-Jun-01 S594TXR S594TXRW PDF

    Untitled

    Abstract: No abstract text available
    Text: S595TX/S595TXR/S595TXRW Vishay Telefunken MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and


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    S595TX/S595TXR/S595TXRW S595TX D-74025 05-Jun-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: S593TX/S593TXR/S593TXRW Vishay Telefunken MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and


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    S593TX/S593TXR/S593TXRW S593TX D-74025 05-Jun-01 PDF

    S593TX

    Abstract: S593TXR S593TXRW X3R marking
    Text: S593TX/S593TXR/S593TXRW Vishay Telefunken MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and


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    S593TX/S593TXR/S593TXRW S593TX D-74025 05-Jun-01 S593TXR S593TXRW X3R marking PDF

    S595TX

    Abstract: S595TXR S595TXRW
    Text: S595TX/S595TXR/S595TXRW Vishay Semiconductors MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and


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    S595TX/S595TXR/S595TXRW S595TX D-74025 05-Jun-01 S595TXR S595TXRW PDF

    Untitled

    Abstract: No abstract text available
    Text: S594TX/S594TXR/S594TXRW Vishay Telefunken MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and


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    S594TX/S594TXR/S594TXRW S594TX D-74025 05-Jun-01 PDF

    S593TX

    Abstract: S593TXR S593TXRW
    Text: S593TX/S593TXR/S593TXRW Vishay Semiconductors MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and


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    S593TX/S593TXR/S593TXRW S593TX D-74025 05-Jun-01 S593TXR S593TXRW PDF

    w5l transistor

    Abstract: PLL 566 SMD TRANSISTOR MARKING DE S592TRW S592T S592TR SMD TRANSISTOR MARKING 94 transistor smd marking 94
    Text: S592T/S592TR/S592TRW Vishay Telefunken MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and


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    S592T/S592TR/S592TRW S592T D-74025 20-Jan-99 w5l transistor PLL 566 SMD TRANSISTOR MARKING DE S592TRW S592TR SMD TRANSISTOR MARKING 94 transistor smd marking 94 PDF

    gs gl 317

    Abstract: telefunken ha 880 gl 1150 S595TRW 945 mosmic
    Text: Tem ic S595TRW S e m i c o n d u c t o r s MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage M OSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF- and VHFtuner with 5 V supply voltage.


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    s595trw S595TRW 22-Oct-97 22-Oct-97 gs gl 317 telefunken ha 880 gl 1150 945 mosmic PDF

    S594TX

    Abstract: S594TXR S594TXRW mg sot-143 smd transistor marking sep
    Text: S594TX/S594TXR/S594TXRW VISHAY Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features 4 2 1 • Integrated gate protection diodes • Low noise figure • High gain, medium forward transadmittance


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    S594TX/S594TXR/S594TXRW OT-143 OT-143R OT-343R D-74025 02-Sep-04 S594TX S594TXR S594TXRW mg sot-143 smd transistor marking sep PDF

    S595TX

    Abstract: S595TXR S595TXRW smd transistor marking sep SG1C
    Text: S595TX/S595TXR/S595TXRW VISHAY Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features 4 2 1 • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance


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    S595TX/S595TXR/S595TXRW OT-143 OT-143R OT-343R D-74025 03-Sep-04 S595TX S595TXR S595TXRW smd transistor marking sep SG1C PDF

    Untitled

    Abstract: No abstract text available
    Text: S595TX/S595TXR/S595TXRW Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features • Integrated gate protection diodes • Low noise figure e3 • High gain, high forward transadmittance


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    S595TX/S595TXR/S595TXRW OT-143 2002/95/EC 2002/96/EC OT-143R OT-343R D-74025 02-May-05 PDF

    mg sot-143

    Abstract: SG1C S593TX S593TXR S593TXRW SMD transistor 26 sot 23 sot343r
    Text: S593TX/S593TXR/S593TXRW VISHAY Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features 4 2 1 • Integrated gate protection diodes • Low noise figure • High gain, very high forward transadmittance


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    S593TX/S593TXR/S593TXRW OT-143 OT-143R OT-343R D-74025 02-Sep-04 mg sot-143 SG1C S593TX S593TXR S593TXRW SMD transistor 26 sot 23 sot343r PDF