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    TRANSISTOR S9018 Search Results

    TRANSISTOR S9018 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S9018 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor SOT23 J8

    Abstract: transistor S9018 S9018 SOT-23 S9018 J8 SOT23 S9018 transistor S9018 SOT23 S9018 J8 transistor S9018 G vebo 15v sot23
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z High current gain bandwidth product. z power dissipation. PC=200mW S9018 Pb Lead-free APPLICATIONS z NPN epitaxial silicon transistor. ORDERING INFORMATION SOT-23


    Original     		PDF S9018 200mW) OT-23 BL/SSSTC085 transistor SOT23 J8 transistor S9018 S9018 SOT-23 S9018 J8 SOT23 S9018 transistor S9018 SOT23 S9018 J8 transistor S9018 G vebo 15v sot23

    S9018W

    Abstract: s9018 transistor S9018 transistor SOT J8 S9018 transistor
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z High current gain bandwidth product. z power dissipation. PC=200mW S9018W Pb Lead-free APPLICATIONS z NPN epitaxial silicon transistor. ORDERING INFORMATION SOT-323


    Original     		PDF S9018W 200mW) OT-323 S9018 BL/SSSTF060 S9018W s9018 transistor S9018 transistor SOT J8 S9018 transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C S9018M WBFBP-03B TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High Current Gain Bandwidth Product fT=1.1 GHz (Typ)


    Original     		PDF WBFBP-03B S9018M WBFBP-03B

    S9018M

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C S9018M WBFBP-03B TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High Current Gain Bandwidth Product fT=1.1 GHz (Typ)


    Original     		PDF WBFBP-03B S9018M WBFBP-03B S9018M

    J8 marking transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C S9018M WBFBP-03B TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High Current Gain Bandwidth Product fT=1.1 GHz (Typ)


    Original     		PDF WBFBP-03B S9018M WBFBP-03B 400MHz J8 marking transistor

    S9018

    Abstract: S9018 transistor IB-015 transistor S9018 h-97
    Text: S9018 PNP EPITAXIAL SILICON TRANSISTOR High Frequency Low Noise Amplifier Application TO-92 Collector Current Ic=-50mA Collector Power Dissipation Pc=400mW High Current Gain Bandwidth Product fT=1,100MHz Typ (Ta=25oC) ABSOLUTE MAXIMUM RATINGS Characteristic


    Original     		PDF S9018 -50mA 400mW 100MHz S9018 S9018 transistor IB-015 transistor S9018 h-97

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors S9018W TRANSISTOR NPN SOT–323 FEATURES  Small Surface Mount Package MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage


    Original     		PDF OT-323 S9018W 400MHz

    g21 Transistor

    Abstract: transistor y21 y11 transistor transistor S9018 S9018 transistor Y22 SOT23 s9018 B1140 transistor y21 sot-23 y21 transistor
    Text: S9018 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=1100MHz Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original     		PDF S9018 1100MHz OT-23 MRA151 MRA153 g21 Transistor transistor y21 y11 transistor transistor S9018 S9018 transistor Y22 SOT23 s9018 B1140 transistor y21 sot-23 y21 transistor

    s9018 transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018 TRANSISTOR NPN SOT-23 FEATURES z AM/FM Amplifier, Local Oscillator of FM/VHF Tuner z High Current Gain Bandwidth Product 1. BASE 2. EMITTER 3. COLLECTOR MARKING：J8


    Original     		PDF OT-23 S9018 OT-23 400MHz s9018 transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 S9018 TRANSISTOR NPN 1.EMITTER FEATURES z High Current Gain Bandwidth Product 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF S9018

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018LT1 TRANSISTOR（ NPN ） SOT—23 1. BASE 2. EMITTER FEATURES 3. COLLECTOR １．０ Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM : 0.05


    Original     		PDF OT-23 S9018LT1 S9018LT1= 037TPY 950TPY 550REF 022REF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9018 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES 2. BASE Power dissipation 3. COLLECTOR PCM: 0.4 W (Tamb=25℃) Collector current 0.05 A ICM: Collector-base voltage 25


    Original     		PDF S9018 400MHz

    S9018 transistor

    Abstract: S9018 transistor S9018 S9018 TO92 S9018 TO-92 S9018* transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 S9018 TRANSISTOR NPN 1.EMITTER FEATURES High Current Gain Bandwidth Product fT=1.1 GHz (Typ) 2.BASE 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF S9018 400MHz S9018 transistor S9018 transistor S9018 S9018 TO92 S9018 TO-92 S9018* transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018 TRANSISTOR NPN SOT-23 FEATURES z AM/FM Amplifier, Local Oscillator of FM/VHF Tuner z High Current Gain Bandwidth Product 1. BASE 2. EMITTER 3. COLLECTOR MARKING：J8


    Original     		PDF OT-23 S9018 OT-23 400MHz

    S9018 transistor

    Abstract: S9018 transistor S9018 S9018* transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018 TRANSISTOR NPN SOT-23 1. BASE 2. EMITTER FEATURES z AM/FM Amplifier, Local Oscillator of FM/VHF Tuner z High Current Gain Bandwidth Product fT=1.1 GHz (Typ) 3. COLLECTOR


    Original     		PDF OT-23 S9018 OT-23 400MHz S9018 transistor S9018 transistor S9018 S9018* transistor

    S9018W

    Abstract: Fm amplifier
    Text: S9018W NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE SOT-323 AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT = 1.1 GHz Typ


    Original     		PDF S9018W OT-323 01-June-2002 S9018W Fm amplifier

    transistor SOT23 J8

    Abstract: transistor j8 S9018LT1
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018LT1 TRANSISTOR NPN SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.05 A ICM: Collector-base voltage


    Original     		PDF OT-23 S9018LT1 OT-23 S9018LT1= 400MHz transistor SOT23 J8 transistor j8 S9018LT1

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors S9018 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES 2. BASE Power dissipation 3. COLLECTOR PCM: 0.4 W (Tamb=25℃) Collector current 0.05 A ICM: Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF S9018 400MHz

    S9018 SOT-23

    Abstract: s9018
    Text: S9018 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ) — MARKING：J8 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 S9018 OT-23 400MHz S9018 SOT-23 s9018

    transistor s9018

    Abstract: S9018 to-92 S9018 S9018 transistor S9018* transistor S9018 TO92
    Text: S9018 S9018 TO-92 TRANSISTOR NPN FEATURES 1. EMITTER 2. BASE Power dissipation 3. COLLECTOR PCM: 0.4 W (Tamb=25℃) Collector current ICM: 0.05 A Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF S9018 400MHz transistor s9018 S9018 to-92 S9018 S9018 transistor S9018* transistor S9018 TO92

    transistor SOT23 J8

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors S9018LT1 TRANSISTOR NPN SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.05 A ICM: Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF OT-23 S9018LT1 OT-23 S9018LT1= 400MHz transistor SOT23 J8

    transistor S9018

    Abstract: S9018 S9018 transistor S9018 to-92
    Text: S9018 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURES TO-92 Power dissipation o P CM :0.31 W (Tamb=25 C) Collector current I CM :0.05 A Collector-base voltage V (BR)CBO :25 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C


    Original     		PDF S9018 transistor S9018 S9018 S9018 transistor S9018 to-92

    S9018

    Abstract: S9018 TO92
    Text: FORWARD INTERNATIONAL ELECTRONICS LID . S9018 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM /FM IF AMPLIFIER^LOCAL OSCILLATOR Package: TO-92 OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=l 100MHz * High Total Power Dissipation: Pc=400mW


    OCR Scan     		PDF S9018 100MHz 400mW BVcboTO-92 100uA S9018 S9018 TO92

    Untitled

    Abstract: No abstract text available
    Text: S9018 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM /FM IF AMPLIFIER^LOCAL OSCILLATOR Package: TO-92 OF FM/VHF TUNER * High Current Gain Bandwidth Product fT =l 100MHz * High Total Power D issipation: Pc=400mW


    OCR Scan     		PDF S9018 100MHz 400mW