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    TRANSISTOR S99 Search Results

    TRANSISTOR S99 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S99 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    S9925

    Abstract: No abstract text available
    Text: N J u ly 199 6 N D S9925A Dual N-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		S9925A S9925 PDF

    NDS9956A

    Abstract: so8 LD3 Transistor dj rw
    Text: February 1996 N NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density


    OCR Scan     		NDS9956A NDS9956A 0D33347 so8 LD3 Transistor dj rw PDF

    NDS9953A

    Abstract: No abstract text available
    Text: February 1996 N NDS9953A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density


    OCR Scan     		NDS9953A Hig25Â NDS9953A 0D33347 PDF

    NDS9948

    Abstract: No abstract text available
    Text: February 1996 N NDS9948 Dual P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has


    OCR Scan     		NDS9948 NDS9948 0D33347 PDF

    transistor 1gs

    Abstract: A7840
    Text: May 1996 N NDS9933 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		NDS9933 S9933 transistor 1gs A7840 PDF

    NDS9959

    Abstract: diode S3 78A
    Text: February 1996 N NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		NDS9959 NDS9959 0D33347 diode S3 78A PDF

    MOSFET IRF 570

    Abstract: No abstract text available
    Text: February 1996 FAIRCHILD IM IC D N D U C T D R tm NDS9948 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		NDS9948 S9948 NDS994S MOSFET IRF 570 PDF

    MOTS2

    Abstract: mosfet motor dc 48v NDS9957
    Text: February 1996 N NDS9957 Dual N-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		NDS9957 NDS9957 0D33347 MOTS2 mosfet motor dc 48v PDF

    NDS9958

    Abstract: No abstract text available
    Text: February 1996 N NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process


    OCR Scan     		NDS9958 NDS9958 0D33347 PDF

    Transistor Mosfet N-Ch 30V

    Abstract: n channel mosfet NDS9952A
    Text: FAIRCHILD February 1996 M IC O N D U C T O R ! NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor Features General Description These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    OCR Scan     		NDS9952A NDS9952A Transistor Mosfet N-Ch 30V n channel mosfet PDF

    9958

    Abstract: la7840
    Text: FAIRCHILD February 1996 SEM ICONDUCTO R NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features T h e s e dual N- and P -C hannel en hancem ent m ode pow er field effe ct transistors a re produce d using Fairchild's proprietary,


    OCR Scan     		NDS9958 9958 la7840 PDF

    Untitled

    Abstract: No abstract text available
    Text: N July 1996 NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features These N-Channel enhancem ent m ode p ow er field effect transistors are produced using proprietary, high cell density, DMOS National's technology. • 4.2 A, 20 V. RDS 0N = 0.06 D @ VGS = 4.5 V


    OCR Scan     		NDS9925A 193tQ PDF

    la7840

    Abstract: No abstract text available
    Text: F A I R C H I L February 1996 D :MICÜNDUCTÜR- m NDS9957 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features T h e s e N -C hannel en hance m en t m ode pow er field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		NDS9957 transie50 S99E7 NDS99E7 la7840 PDF

    2DI75D-050A

    Abstract: DIODE B93 B-93 H125 M208 gip transistor b93 diode YSTT
    Text: 2DI75D-050A 75a /<7- -)V POWER TRANSISTOR MODULE i F e a tu re s • 7 'J — • h F E ^ ftt' •m m X — KF*3W Including Free Wheeling Diode High DC Current Gain Insulated Type If f liÉ : A p p lic a t io n s • High Power Switching • AC i AC Motor Controls


    OCR Scan     		2DI75D-050A E82988 DIODE B93 B-93 H125 M208 gip transistor b93 diode YSTT PDF

    NDS9955

    Abstract: No abstract text available
    Text: February 1996 N NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor Features General Description T h e s e N -C hannel enhance m en t m ode pow er field effect tra nsistors are produced using N ational's proprietary, high cell density, D M O S technology. T h is v e ry high de nsity process is


    OCR Scan     		NDS9955 NDS9955 0D33347 PDF

    NDS9942

    Abstract: m6rj S9942
    Text: February 1996 N NDS9942 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features T h e s e dual N- and P -C hannel en hancem ent m ode pow er field effect transistors are produce d using N ational's proprietary, high cell density, D M O S technology. T h is v e ry high density


    OCR Scan     		NDS9942 S9942 m6rj PDF

    785-500

    Abstract: it 785-500 NDS9947
    Text: F e b ru a ry 1 9 9 6 N NDS9947 Dual P-Channel Enhancement Mode Field Effect Transistor Features General Description T h e s e P -C hannel en hance m en t m ode pow er field effect tra nsistors are produced using N ational's proprietary, high cell density, D M O S technology. T h is v e ry high de nsity process is


    OCR Scan     		NDS9947 NDS9947 0D33347 785-500 it 785-500 PDF

    S9943

    Abstract: NDS9943
    Text: February 1996 N NDS9943 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features T h e s e dual N - and P -C h a n n e l e n h a n c e m en t m o d e po w er field e ffec t transistors a re prod uced using • N -C h a n n e l 3 .0 A , 2 0 V , R r


    OCR Scan     		NDS9943 S9943 PDF

    2SC495

    Abstract: SC496 2SA496 2SC495 transistor 2SC496 2SA49 TO2SA5 2SC495-O 2SC496-R 2SC49
    Text: 2SC 95 ' k 2/U D >N PN X ti^2/?JI/}B h5>^^ PC TÄ Ä ^ S ILIC O N 2SC 96 o + * # * * « o M e d iu m P o w e r A m p i i f i e r A p p i i c a t ions tefn«E BgiT'y : - y =l y ^ x - o . 5 V0E(sat ) w NPN 0 .2 5 V EPITAXIAL TRANSISTOR (PCT PROCESS) (T y p .)


    OCR Scan     		2SC95 2SC96 SC496 2S0496 2SC495 S0496 70X70X1DUD 35X35Xlnun 25X25Xlmm SC496 2SA496 2SC495 transistor 2SC496 2SA49 TO2SA5 2SC495-O 2SC496-R 2SC49 PDF

    AAW2

    Abstract: CBVK741B019 F011 F63TNR FDS9953A L86Z NDS9933A
    Text: N/l IC O N D U C TO R tm NDS9933A Dual P-Channel Enhancem ent M ode Field Effect Transistor Features General Description T h is P -C h a n n e l e n h a n c e m e n t m o d e p o w e r field e f­ • -2 .8 A , - 2 0 V. R,D S o n fe c t tra n s is to r is p ro d u c e d u s in g F a irc h ild ’s p ro p ri­


    OCR Scan     		NDS9933A AAW2 CBVK741B019 F011 F63TNR FDS9953A L86Z NDS9933A PDF

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR CCD area image sensor S9972/S9973 series Front-illuminated FFT-CCD, high near IR sensitivity The S9972/S9973 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, the S9972/S9973 series can be used as a linear image sensor having a long aperture in the direction of the device


    Original     		S9972/S9973 SE-171 KMPD1092E05 PDF

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR CCD area image sensor S9979 Front-illuminated FFT-CCDs S9979 is a FFT-CCD area image sensor specifically designed for low-light-level detection in scientific applications. In particular, this image sensor is ideally suited for extremely low-light-level detection in such fields as spectroscopy and astronomy.


    Original     		S9979 S9979 SE-171 KMPD1091E01 PDF

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR CCD area image sensor S9979 TDI operation / large active area CCD S9979 is a FFT-CCD area image sensor specifically designed for low-light-level detection in scientific applications. In particular, this image sensor is ideally suited for extremely low-light-level detection in such fields as spectroscopy and astronomy.


    Original     		S9979 S9979 SE-171 KMPD1091E03 PDF

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR CCD area image sensor S9979 TDI operation / large active area CCD S9979 is a FFT-CCD area image sensor specifically designed for low-light-level detection in scientific applications. In particular, this image sensor is ideally suited for extremely low-light-level detection in such fields as spectroscopy and astronomy.


    Original     		S9979 S9979 SE-171 KMPD1091E03 PDF