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    TRANSISTOR SE 135 Search Results

    TRANSISTOR SE 135 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SE 135 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SE 135

    Abstract: KSA1625
    Text: KSA1625 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCH TO-92 • High Breakdown Voltage • High Speed Switching ABSOLUTE MAXIMUM RATINGS C h a ra cte ristic T a “ 2 5 C Sym bol Collector B ase Voltage Collector Emitter Voltage Emitter B a se Voltage B a se Current


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    PDF KSA1625 TRANSISTOR SE 135 KSA1625

    BUK426-100A

    Abstract: BUK426-100B BUK426-100
    Text: N AMER PHILIPS/DISCRETE 5 SE D • D020245. T PowerMOS transistor ■ BUK426-100A BUK426-100B T - 3 9 -/7 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope, th e device is intended for use in Switched Mode Power Supplies


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    PDF D020245. BUK426-100A BUK426-100B BUK426 -100B BUK426-100B BUK426-100

    AF109

    Abstract: AF109R Q60106-X109-R1 small signal germanium transistor AF 109 R
    Text: 2SC D • ÛSBSbOS QQ04Q53 □ « S I E G AF109 R PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF 04053 D " T 2- 3 for AGC input stages up to 260 MHz / ^ 7 A F 109 R is a germanium PNP RF m esa transistor in TO 7 2 ca se 18 A 4 DIN 4 18 76 . T he terminals are electrically insulated from the case.


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    PDF AF109 Q60106-X109-R1 AF109R Q60106-X109-R1 small signal germanium transistor AF 109 R

    TRANSISTOR SE 135

    Abstract: transistor ark 05
    Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 G EN ER A L PU RPO SE TRANSISTO R SO T-23 ABSO LU TE MAXIMUM RATINGS TA=25t: Characteristic Sym bol Collector-Base Voltage Coliector-Emttter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


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    PDF KST812M3/M4/M5/M6/M7 KST5088 KST812M KST812M4 KST812M5 KST812M6 TRANSISTOR SE 135 transistor ark 05

    Untitled

    Abstract: No abstract text available
    Text: * FAIRCHII.D SE M IC O N D U C TO R February 1997 i NDH833N N-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOT -8 N-Channel enhancement mode power field • 7.1 A, 20 V. effect transistors are produced using Fairchild's proprietary,


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    PDF NDH833N

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA <DISCRETE/OPTO fä h ih a 99D 16778 D"T:'3>9-I3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 1 5 3 SILICON N CHANNEL MOS TYPE TECHNICAL DATA flV M O SE) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS


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    PDF 100nA 250pA 250iJA 00A/us

    2N341

    Abstract: MIL-S-1950U a1u transistor XLO6 2N3413 a1u marking 6 A1u marking transistor c 3206
    Text: M IL -S -19500/31C 1 June 1972 SUPERSEDING M IL -S -1 9 5 0 0 /3 1 B 21 Ja n u ary 1965 MILITARY SPECIFICA TION SEMICONDUCTOR DEVICE. TRANSISTOR, NPN. SILICON, LOW-POWER T Y PE 2N341 T hia sp e c ific a tio n is approved fo r u se by all D e p a rt­ m e n ts and A gencies of th e D e p a rtm e n t of D efen se?-


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    PDF MIL-S-19500 MIL-S-19500/31B 2N341 2N341 MIL-S-1950U a1u transistor XLO6 2N3413 a1u marking 6 A1u marking transistor c 3206

    2N404

    Abstract: 2N404 transistor OC 74 germanium transistor germanium transistor 2n404a 2N404A J971 2N404 JAN
    Text: MIL -S-19500/20C 22 March .1971 _ SUPERSEDING MIL -S -195 0 0 /2 OB 23 October 1964 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PN P, GERMANIUM, LOW-POWER TYPES 2N404 AND 2N404A T his sp ecification is mandatory for usg by all D ep artm ents and A gen cies of the Departm ent of D efen se .


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    PDF -S-19500/20C 2N404 2N404A 2N404A 2N404. -19500/20C MIL-S-19500, MIL-S-19500 2N404 transistor OC 74 germanium transistor germanium transistor 2n404a J971 2N404 JAN

    transistor smd z8

    Abstract: RF NPN POWER TRANSISTOR C 10-50 GHZ SMD Transistor z6 smd transistor z8 smd transistor Z10 transistor 6 pin SMD Z2 Z808 z202 3 pin TRIMMER capacitor 6 pin TRANSISTOR SMD Z8
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6408 NPN Silicon RF Pow er Transistor D e sig n e d fo r PCN and PCS ba se s ta tio n a p p lic a tio n s , th e M R F 6 4 0 8 incorporates high value em itter ballast resistors, gold metallizations and offers


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    PDF MRF6408 MRF6408PH184 MRF6408 transistor smd z8 RF NPN POWER TRANSISTOR C 10-50 GHZ SMD Transistor z6 smd transistor z8 smd transistor Z10 transistor 6 pin SMD Z2 Z808 z202 3 pin TRIMMER capacitor 6 pin TRANSISTOR SMD Z8

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by H11AV1/D SEMICONDUCTOR TECHNICAL DATA ® TO VDE UL CSA SE TI SEM KO DEM KO NEMKO BABT H11AV1,A* H11AV2,A [C TR = 100% Min] G lo b a l O p to iso la t o r 6-Pin DIP Optoisolators Transistor Output [C TR = 50% Min] ’ M otorola Preferred Devices


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    PDF H11AV1/D H11AV1 H11AV2

    TT 2188 transistor

    Abstract: Transistor TT 2176 2SC2172 TRANSISTOR TT 2190 TRANSISTOR TT 2188 tt 2194 transistor k 316 TRANSISTOR K 2191 transistor tt 2180
    Text: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF 175MHz Tc-25 /-160MHz. 7Y-25T TT 2188 transistor Transistor TT 2176 2SC2172 TRANSISTOR TT 2190 TRANSISTOR TT 2188 tt 2194 transistor k 316 TRANSISTOR K 2191 transistor tt 2180

    2SC1474

    Abstract: 2SC897 2SC1403 2SA743B 2SC1116 2SC1445 2SC1402 2sc1419 2sc1826 2SC1115
    Text: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF 2SCI450 2SC1826 2SC1827 2SC198S 2SC1986 600pS 2SC1474 2SC1474 2SC897 2SC1403 2SA743B 2SC1116 2SC1445 2SC1402 2sc1419 2SC1115

    2SA850

    Abstract: TRANSISTOR 2SA850 1729H 2SC1721 2SA854 2SA933
    Text: - 5 - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF 175MHz, 100Hz, iTc-25 2SA850 TRANSISTOR 2SA850 1729H 2SC1721 2SA854 2SA933

    2SC1961

    Abstract: transistor c 301b japanese transistor manual 1981 2SA771 138D 2SA770 Transistor Manual 1981
    Text: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF 2SA770 2SA771 2SC1961 transistor c 301b japanese transistor manual 1981 138D Transistor Manual 1981

    TA 2092 N

    Abstract: 2SA9411 2SA942 2SC2082 2093H
    Text: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF r--25 /--470MHz, 470MHz, -470MHz. 250nS TA 2092 N 2SA9411 2SA942 2SC2082 2093H

    NEC PS1001

    Abstract: PS1001 lb30
    Text: N E C ELECTRONICS INC 3GE D • b457555 0G3it.3b 1 ■ PH O TO O T~H1'#3 C O U P LE R PS1001 PHO TO C O U PLER IN D U S T R IA L U SE DESCRIPTION Tha PS 1001 is an optically coupled isolator containing a GaAs light emitting diode and an NPN sillicon photo transistor.


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    PDF b42755S PS1001 PS1001 40uax. 37max. b42752S 02eil33li T-41-83 NEC PS1001 lb30

    ns8002

    Abstract: 2sc710 transistor transistor 2SC710 2SC710 C 2SA561 2SC710 2SC710-15 138B LT 735 2SA562
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF 150pS 2SA561 Tbb-150pS 2SA562^ 150MHz. rbb-30pS ns8002 2sc710 transistor transistor 2SC710 2SC710 C 2SC710 2SC710-15 138B LT 735 2SA562

    2N3055

    Abstract: 2N3773 2SB766 2SB767 2SB772 2SB775 2SD867 2N3773 transistor
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF re-25 2SB775 2SB776 2N3055 2N3773 2SB766 2SB767 2SB772 2SD867 2N3773 transistor

    Transistor 2sc1915

    Abstract: 2SC1951 2SC1586 2SC1915 2SC1762 2SC1811 2SC1584 2SC1940 Tbb 38 138B
    Text: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF 2SC1940 2SC1941 2SC1951 150pS Transistor 2sc1915 2SC1951 2SC1586 2SC1915 2SC1762 2SC1811 2SC1584 2SC1940 Tbb 38 138B

    transistor 1247a

    Abstract: 1207B 2SC911 NFA 222 2SC1271A 2SC911A 1711A FJ 403E 2SA872A 2SC1207A
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF 150MHz, 2SA794A T--25' 2SA808A 1707A1 300nS 220nS 100Hz, transistor 1247a 1207B 2SC911 NFA 222 2SC1271A 2SC911A 1711A FJ 403E 2SA872A 2SC1207A

    2SD588

    Abstract: 2sd586 transistor 2sD586 2sd588 data 2SD587 transistor 2SD587 2SD593 2SB601 2SD560 2SD571
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF 2SD593 2SD596 2SD608 Ir-25 2SD610 2SD588 2sd586 transistor 2sD586 2sd588 data 2SD587 transistor 2SD587 2SD593 2SB601 2SD560 2SD571

    2SA205

    Abstract: No abstract text available
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF 200Mc Tr-25 455kc 2SA205

    2SA138

    Abstract: st28c ge 142 2S160 RBL 43 P ST28B 2S156 ST28A RBL 43 P TRANSISTOR 2S153
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF 2S167 ST20A 2S168 ST20AR 2S169 ST20E 2SA138 st28c ge 142 2S160 RBL 43 P ST28B 2S156 ST28A RBL 43 P TRANSISTOR 2S153

    transistor tt 2206

    Abstract: 2sc2202 2sc2202 transistor TT 2206 TT 2206 transistor hr 2206 cp 2206 CP 2207 7c 138D
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF 38dBm, 175MHz, transistor tt 2206 2sc2202 2sc2202 transistor TT 2206 TT 2206 transistor hr 2206 cp 2206 CP 2207 7c 138D