2SC3465
Abstract: TRANSISTOR Outlines DDD4443 OCQ4444
Text: sanyo Sem icon ducto r 12E D I corp TTTPDTfc. 000444c! U | T -s¿-/ár 2SC3465 NPN Triple Diffused Planar Silicon Transistor 2017 Switching Regulator Applications Features . High breakdown voltage and high reliability. . Fast switching speed t^>: 0.1us typ.
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2SC3465
0QD444S
PW-300us
0DGB752
2SC3465
TRANSISTOR Outlines
DDD4443
OCQ4444
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L1606
Abstract: a 1201 sanyo 2SD1837
Text: SANYO SEM IC ON D UC TOR CORP 1HE D I ? tiT?Q?b DDDSEb4 2SD1837 T-33-2041 NPN Planar Silicon Darlington Transistor Driver Applications 2231A Applications . Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers Features
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2SD1837
T-33-
B1252
0DGB752
L1606
a 1201 sanyo
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1s126a
Abstract: 2SD1837 1S126
Text: SANYO SEM IC ON D UC TOR CORP 1HE D I ? tiT?Q?b DDDSEb4 T-33- 2SD1837 2041 NPN Planar Silicon Darlington Transistor Driver Applications 2231A Applications . Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers Features
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2SD1837
T-33-NPN
IS-126
1S-126A
IS-20MA
1s126a
2SD1837
1S126
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2SC2210
Abstract: 374F
Text: 1SE DI 7Ti7D7t. □□□4150" T SANYO SEM ICO NDUCTOR CORP 2SC2210 2003A NPN Epitaxial Planar Silicon Transistor AM R F Am p, Converter Applications 374F Features . Highly resistant to dielectric breakdown and suited for car use. . Good spurious characteristic due to low f<j>.
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2SC2210
B1252
2SC2210
374F
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Untitled
Abstract: No abstract text available
Text: 1SE DI 7Ti7D7t. □□□4150" T SANYO SEM ICO NDUCTOR CORP 2SC2210 2003A NPN Epitaxial Planar Silicon Transistor AM R F Am p, Converter Applications 374F Features . Highly resistant to dielectric breakdown and suited for car use. . Good spurious characteristic due to low f<j>.
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2SC2210
IS-126
1S-126A
IS-20MA
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2052A
Abstract: SILICON TRANSISTOR FS 2025
Text: SANYO SEM ICONDUCTO R IS E CORP D 2SK778 N -Channel M O S Silicon Field-Effect Transistor 2052A 2562 7 T i 7 G 7 t. □DGSMbS 1 T-Sl-oV Very High Speed Switching Applications Features . Low ON resistance, very high-speed switching Absolute Haxlaua Ratings at Ta=25°C
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2SK778
20VfVDs
IS-126
1S-126A
IS-20MA
IS-313
IS-313A
2052A
SILICON TRANSISTOR FS 2025
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Untitled
Abstract: No abstract text available
Text: D • SbMEEm MA42140 Series Description □ □ □ 1 4 4 fl m/a-com T H MIC \ Silicon Low Noise Bipolar Transistor t 31-17 sem icondtBrlngton - Nominal fT - 4.5 GHz Nominal Current Range - 1 to 10 mA Ip Max. - 50 mA Frequency Range - 300 MHz to 2.0 GHz Geometry - 63
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MA42140
MA42141
MA42142
MA42143
2N5651
2N5662
MIL-STD-750
cycles-65
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2005A
Abstract: VEBO-15V 2SC4389 PA 2027A TRANSISTOR IFW IC3100
Text: SANYO SEMICONDUCTOR [-W-'-s " -«?*'/? 6,/îj1 L:'~~~ CORP | 32E 7 cH 7 0 7 fcj O O C H l l l • 2006A —« -• • - D 2 E3 T -2 ? -2 3 N P N Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amp Applications 2957 Features
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h707fci
T-2f23
T-91-20
SC-43
2005A
VEBO-15V
2SC4389
PA 2027A
TRANSISTOR IFW
IC3100
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SS9014
Abstract: No abstract text available
Text: SS9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE TO-92 • High total power dissipation. PT=450mW • High hFE and good linearity • Complementary to SS9015 ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Symbol Collector-Base Voltage
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SS9014
450mW)
SS9015
SS9014
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transistor SS9015
Abstract: No abstract text available
Text: SS9015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY, LOW NOISE AMPLIFIER TO-92 • Complement to SS9014 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
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SS9015
SS9014
transistor SS9015
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Level-3-245C-168
Abstract: UA7805C voltage regulator UA7824 UA7805C equivalent uA78xx uA7812 application note uA7815C equivalent uA7810C uA7812C equivalent
Text: µA7800 SERIES POSITIVE-VOLTAGE REGULATORS www.ti.com SLVS056L – MAY 1976 – REVISED NOVEMBER 2006 FEATURES • • • 3-Terminal Regulators Output Current up to 1.5 A Internal Thermal-Overload Protection • • • High Power-Dissipation Capability Internal Short-Circuit Current Limiting
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A7800
SLVS056L
O-220)
O-263)
Level-3-245C-168
UA7805C voltage regulator
UA7824
UA7805C equivalent
uA78xx
uA7812 application note
uA7815C equivalent
uA7810C
uA7812C equivalent
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ATI Research
Abstract: MIL-STD-750b
Text: Reliability of semiconducto in a sta b ilized condition. T he ab ility of p ro d u c tion p ro cesses is confirm ed and p rio rity item s a re estab lish ed to rea lize ideal pro cess control, th u s p av in g th e w ay fo r su b se q u en t m ass p ro
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168Hrs
500Hre
2SK643
500H-S
100n-
500Hrs
700650J,
ATI Research
MIL-STD-750b
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MA2Q738
Abstract: MA738
Text: Regulations No.: IC3F5090 Total Pages Page 15 1 Part No. AN8016NSH-A Package Code No. SSOP010-P-0225A Semiconductor Company Matsushita Electric Industrial Co., Ltd. Established by k. oU'i Applied by Checked by Prepared by M.Hiramatsu M.Yamanaka M.Motomori
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IC3F5090
AN8016NSH-A
SSOP010-P-0225A
218016N00107110
AN8016NSH-A
MA2Q738
MA738
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to-220 fully mold
Abstract: TEXAS INSTRUMENTS uA7900
Text: µA7900 SERIES NEGATIVE-VOLTAGE REGULATORS www.ti.com SLVS058H – JUNE 1976 – REVISED NOVEMBER 2006 FEATURES 3-Terminal Regulators Output Current up to 1.5 A No External Components Internal Thermal-Overload Protection INPUT INPUT High Power-Dissipation Capability
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A7900
SLVS058H
O-220)
O-263)
to-220 fully mold
TEXAS INSTRUMENTS uA7900
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ATA6026
Abstract: ATA6026-PHQW JESD78 QFN32
Text: Features • PWM and Direction-controlled Driving of Four Externally Powered NMOS Transistors • Internal Charge Pump Provides Gate Voltages for High-side Drivers in Permanent ON Mode and Supplies the Gate of the External Battery Reverse Protection NMOS • 5V Regulator With External Power Device NPN and Current Limitation Function
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4865C
ATA6026
ATA6026-PHQW
JESD78
QFN32
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MIL-STD-750E
Abstract: 1N21B diode cc 3053 MIL-PRF-680 D65019 rectifier 2037-1 TT 2076 SAE-ARP-743 1N21B diode 1N21* Diode Detector Holder
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 June 2007 INCH - POUND MIL-STD-750E 20 November 2006 SUPERSEDING MIL-STD-750D 28 FEBRUARY 1995 DEPARTMENT OF DEFENSE TEST METHOD STANDARD TEST METHODS FOR SEMICONDUCTOR DEVICES
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MIL-STD-750E
MIL-STD-750D
MIL-STD-750E
1N21B
diode cc 3053
MIL-PRF-680
D65019
rectifier 2037-1
TT 2076
SAE-ARP-743
1N21B diode
1N21* Diode Detector Holder
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AN8015SH
Abstract: No abstract text available
Text: Code No.: IC3F4738 Total Pages Page 17 1 Part No. AN8015SH Package Code No. SSOP010-P-0225A Analogue LSI Business Unit Semiconductor Company Matsushita Electric Industrial Co., Ltd. Established by Applied by ^ K.Komichi Checked by •ty 4 c tfm ìÙ Ìi M.Hiramatsu
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IC3F4738
AN8015SH
SSOPOI0-P-0225A
AN8015SH
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Untitled
Abstract: No abstract text available
Text: SS9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE T O -9 2 • High total pow er dissipation. PT=450mW • High hpE and good linearity • C om plem entary to S S 9015 ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol
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SS9014
450mW
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MA2Q738
Abstract: MA738
Text: Code No.: IC3F4642 Total Pages Page 15 1 Part No. AN8016SH Package Code No. SSOP010-P-0225A Analogue LSI Business Unit Semiconductor Company Matsushita Electric Industrial Co., Ltd. Established by Applied by Checked by Prepared by M.Hiramatsu J.Hara R.Nakai
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IC3F4642
AN8016SH
SSOPOI0-P-0225A
21S016S00106Q50
AN8016SH
MA2Q738
MA738
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PDF
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A High Efficiency Doherty Amplifier with Digital Predistortion for WiMAX
Abstract: CGH27030 op4400 200w power amplifier PCB layout GaN amplifier 100W 200w mono OP44 100w car amplifier GaN Bias 25 watt ultrarf
Text: From December 2008 High Frequency Electronics Copyright 2008 Summit Technical Media, LLC High Frequency Design DOHERTY AMPLIFIER A High Efficiency Doherty Amplifier with Digital Predistortion for WiMAX By Simon Wood and Ray Pengelly, Cree, Inc., and Jim Crescenzi, Central Coast Microwave Design, LLC
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transistor jt
Abstract: M558-01 M-558
Text: MOTOROLA 6367254 SC MOTOROLA ÍX ST R S /R SC F> Tb D Ë J bBbVSSM 0005412 D 96D 8 2 4 1 2 <X S T R S / R F - M A X I M U M R A T IN G S Sym bol Value Unit V C EO 60 Vdc Coltector-Base Voltage VC B 60 Vdc Emitter-Base Voltage V e b 5.0 Vdc ic 600 mAdc Rating
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M558-01
M558-02
M558-02
558-02Total
Mil-Std-750,
MH-Std-750,
transistor jt
M-558
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2ss9014
Abstract: ss8015 A 671 transistor SS9013 SS9014 U007 transistor ss9014 SS9012 T-31-21 50nr
Text: IM E D SAMSUNG SEM ICONDUCTOR . INC I 7*^4142 " SS9012 4 I 00073*1 T - f i ~ 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • High total power dissipation: PT=825mW High Collector Current. (Ic = -500mA) Complementary to SS9013
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71b4142
SS9012
825mW)
-500mA)
SS9013
Breakdo4142
SS9014
fe-14
1-10C
2ss9014
ss8015
A 671 transistor
SS9013
U007
transistor ss9014
T-31-21
50nr
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Untitled
Abstract: No abstract text available
Text: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 6, JUNE 2012 1755 LDMOS Technology for RF Power Amplifiers S. J. C. H. Theeuwen and J. H. Qureshi Invited Paper Abstract—We show the status of laterally diffused metal–oxide–semiconductor (LDMOS) technology, which has
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Untitled
Abstract: No abstract text available
Text: Characterization of atomic layer deposition HfO2, Al2O3, and plasmaenhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology Jiro Yota,a Hong Shen, and Ravi Ramanathan Skyworks Solutions, Inc., 2427 W. Hillcrest Drive, Newbury Park, California 91320
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