BLV91
Abstract: ferroxcube 1988 mda406 MDA401
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV91/SL UHF power transistor Product specification September 1988 Philips Semiconductors Product specification UHF power transistor BLV91/SL DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in
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Original
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BLV91/SL
OT-172D)
BLV91
ferroxcube 1988
mda406
MDA401
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PDF
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122d transistor
Abstract: SL 100 NPN Transistor MDA309 122d SL 100 NPN Transistor base emitter collector
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU11/SL UHF power transistor Product specification July 1986 Philips Semiconductors Product specification UHF power transistor BLU11/SL DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in
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Original
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BLU11/SL
OT-122D)
122d transistor
SL 100 NPN Transistor
MDA309
122d
SL 100 NPN Transistor base emitter collector
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PDF
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MDA380
Abstract: 4312 020 36642 MDA385 BLU99 TRANSISTOR SL 100 "2222 352"
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU99 BLU99/SL UHF power transistor Product specification March 1993 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in
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Original
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BLU99
BLU99/SL
BLU99
OT122A)
BLU99/SL
MDA380
4312 020 36642
MDA385
TRANSISTOR SL 100
"2222 352"
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PDF
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SL 100 NPN Transistor
Abstract: SL 100 NPN Transistor base emitter collector blv99 transistor sl 100
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV99/SL UHF power transistor Product specification September 1991 Philips Semiconductors Product specification UHF power transistor FEATURES BLV99/SL PIN CONFIGURATION • Emitter-ballasting resistors for an optimum temperature profile
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Original
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BLV99/SL
OT172D
MSB007
MBB01
SL 100 NPN Transistor
SL 100 NPN Transistor base emitter collector
blv99
transistor sl 100
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PDF
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SL 100 NPN Transistor base emitter collector
Abstract: mda301 BLT92 MDA300 SL 100 NPN Transistor SL 100 power transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT92/SL UHF power transistor Product specification May 1989 Philips Semiconductors Product specification UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz
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Original
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BLT92/SL
SL 100 NPN Transistor base emitter collector
mda301
BLT92
MDA300
SL 100 NPN Transistor
SL 100 power transistor
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PDF
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SL 100 NPN Transistor
Abstract: blt91 International Power Sources ferroxcube wideband hf choke Philips 4312 020 TRANSISTOR SL 100 of transistor sl 100 sl 100 transistor
Text: PHILIPS INTERNATIONAL bSE D B 7110fl5Li DOLEb71 0 4^1 • PHIN BLT91/SL _ U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in handheld radio stations in the 900 MHz communications band.
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OCR Scan
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00L2b71
BLT91/SL
OT-172D)
7110fl2b
D0bSb77
SL 100 NPN Transistor
blt91
International Power Sources
ferroxcube wideband hf choke
Philips 4312 020
TRANSISTOR SL 100
of transistor sl 100
sl 100 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbS3T31 DDBflflRO LQ3 I APX b'lE D l BLU99 BLU99/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.
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OCR Scan
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bbS3T31
BLU99
BLU99/SL
OT122A)
BLU99/SL
OT122D)
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PDF
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bb53^31 DQ28761 715 • IAPX BLT92/SL bTE J> UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.
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OCR Scan
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DQ28761
BLT92/SL
OT122D)
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PDF
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transistor tt 2222
Abstract: TT 2222 npn TRIMMER capacitor 5-60 pF TT 2222 ic TT 2222 BLU99 4312 020 36642
Text: bSE T> 711002b GGti27fi7 0^7 « P H I N BLU99 BLU99/SL PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters in the u.h.f. band. The transistor is also very suitable fo r application in the 900 MHz m obile radio band.
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OCR Scan
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711002b
GGb27fi7
BLU99
BLU99/SL
OT122A)
BLU99/SL
OT122D)
transistor tt 2222
TT 2222 npn
TRIMMER capacitor 5-60 pF
TT 2222
ic TT 2222
4312 020 36642
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE D bb53^31 □DE‘1131 b'U I IAPX BLV91/SL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in mobile radio transmitters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.
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OCR Scan
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BLV91/SL
OT-172D)
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE D bbS3T31 0D2B774 565 « A P X BLT91/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.
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OCR Scan
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bbS3T31
0D2B774
BLT91/SL
OT-172D)
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PDF
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philips rf choke ferrite
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bbsa^ai 0026766 07T * A P X BLT93/SL b'lE D A UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in hand-held radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.
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OCR Scan
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BLT93/SL
OT122D)
7Z24076
7Z24078
philips rf choke ferrite
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PDF
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B303D
Abstract: TT 2222 npn transistor tt 2222 transistor npn 2xi transistor sot t06 FTC 960 trimmer PT 10 TT 2222 ka band transistor
Text: b5E » H 71106Eb D0b3DEÛ 07T « P H I N BLV91/SL PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in mobile radio transm itters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.
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OCR Scan
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BLV91/SL
OT-172D)
711005b
DGb3034
BLV91/SL
B303D
TT 2222 npn
transistor tt 2222
transistor npn 2xi
transistor sot t06
FTC 960
trimmer PT 10
TT 2222
ka band transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bb.53331 □□33117 311 • APX BLV90/SL h3E D J V U H F POWER TRANSISTOR NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • diffused emitter-ballasting resistors for an optimum temperature profile.
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OCR Scan
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BLV90/SL
OT-172D)
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PDF
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TRIMMER capacitor 160 pF
Abstract: 7z97443 PTFE trimmer capacitor 4312 020 36642
Text: bSE » Q 711002b QOtiBDlM 5ÖS HIPHIN BLV90/SL _ PHILIPS INTERNATIONAL_ _ U H F POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in m obile radio transm itters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.
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OCR Scan
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BLV90/SL
OT-172D)
TRIMMER capacitor 160 pF
7z97443
PTFE trimmer capacitor
4312 020 36642
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PDF
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ferrite 4312
Abstract: SL 100 NPN Transistor
Text: PHILIPS INTERNATIONAL bSE D 711002b QDbEböS 333 I IPHIN BLT93/SL • A UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in hand-held radio stations in the 900 MHz communications band. This device has been designed specifically fo r class-B operation.
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OCR Scan
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711002b
BLT93/SL
OT122D)
7Z24076
7Z24077
7Z24078
ferrite 4312
SL 100 NPN Transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE hTE bbS3T31 □DE'inb b4fl D Product specification Philips S em iconductors_ BLV99/SL UHF power transistor PIN CONFIGURATION FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures
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OCR Scan
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bbS3T31
BLV99/SL
OT172D
PINNING-SOT172D
7Z94684
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PDF
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ma-6008
Abstract: No abstract text available
Text: bSE D El 711Qä2b 0Gb3D14 5öS HIPHIN BLV90/SL _ PHILIPS INTERNATIONAL_ _ U H F POWER TRANSISTOR N PN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 9 0 0 M H z band. Features: • diffused emitter-ballasting resistors for an optim um temperature profile.
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OCR Scan
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BLV90/SL
OT-172D)
711002b
ma-6008
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PDF
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SL 100 NPN Transistor base emitter collector
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE D • bbSB^Bl □□ETl'lb b4ä H A P X _ Product specification Philips Semiconductors_ BLV99/SL UHF power transistor PIN CONFIGURATION FEATUR ES • Emitter-ballasting resistors for an optimum temperature profile
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OCR Scan
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BLV99/SL
OT172D
UB8012
OT172D
7Z94G85
SL 100 NPN Transistor base emitter collector
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PDF
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Si 122D
Abstract: 122d transistor BLU11/Si 122D
Text: N AMER PHILIPS/DISCRETE b^Z b b 5 3 c]31 G0Eflfl03 10b BIAPX T> BLU11/SL J V U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile transmitters in the 470 MHz band. Features • multi-base structure and emitter-ballasting resistors for an optimum temperature profile.
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OCR Scan
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bb53c
G0Eflfl03
BLU11/SL
OT-122D)
BLU11/SL
Si 122D
122d transistor
BLU11/Si 122D
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PDF
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sot172
Abstract: No abstract text available
Text: Philips Semiconductors 711065b 0 0 b 3D^3 'ìQ l B B P H IN product specification UHF power transistor PHILIPS BLV99/SL bSE ]> INTERNATIONAL FEATURES PIN CONFIGURATION • Emitler-baflasting resistors for an optimum temperature profile • Gold metallization ensures
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OCR Scan
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BLV99/SL
OT172
-SOT172D
MDB012
7Z94685
sot172
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PDF
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE ^ 5 3 1 3 1 0QSfl7b7 345 H A P X BLT90/SL b^E D A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 M H z communications band. This device has been designed specifically for class-B operation.
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OCR Scan
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BLT90/SL
OT-172D)
bb53T31
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PDF
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ITT 2222 npn
Abstract: ITT 2222 A itt 2222 blu99 transistor SL 100 NPN Transistor "2222 352" 4312 020 36642 BLU99 ferroxcube wideband hf choke SOT122A
Text: N AMER P H I L I P S / D I S C R E T E blE D • bbâB^Bl DDEfifiRQ btH ■ IAPX Jl BLU 99 BLU99/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.
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OCR Scan
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BLU99/SL
BLU99
OT122A)
BLU99/SL
OT122D)
ITT 2222 npn
ITT 2222 A
itt 2222
blu99 transistor
SL 100 NPN Transistor
"2222 352"
4312 020 36642
ferroxcube wideband hf choke
SOT122A
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PDF
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SL 100 NPN Transistor
Abstract: transistor tt 2222 SL 100 power transistor 43120203664 International Power Sources ferroxcube wideband hf choke Philips 119
Text: P H IL IP S bSE I N T ^ ’-i D O 711002b 00b2fab4 A bCH H P H I N BLT90/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically fo r class-B operation.
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OCR Scan
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711002b
00b2fab4
BLT90/SL
OT-172D)
00b2b70
SL 100 NPN Transistor
transistor tt 2222
SL 100 power transistor
43120203664
International Power Sources
ferroxcube wideband hf choke
Philips 119
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PDF
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