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    TRANSISTOR SMD 05 Search Results

    TRANSISTOR SMD 05 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SMD 05 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSS84 MARKING CODE

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT23 NXP SMD TRANSISTOR MARKING CODE smd code marking WV TRANSISTOR SMD MARKING CODES TRANSISTOR SMD MARKING CODE A1 marking code DG SMD Transistor BSS84 Equivalent BSS84 marking code e1 smd
    Text: BSS84 P-channel enhancement mode vertical DMOS transistor Rev. 05 — 9 December 2008 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor DMOS transistor in a small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF BSS84 O-236AB BSS84/DG BSS84 MARKING CODE TRANSISTOR SMD CODE PACKAGE SOT23 NXP SMD TRANSISTOR MARKING CODE smd code marking WV TRANSISTOR SMD MARKING CODES TRANSISTOR SMD MARKING CODE A1 marking code DG SMD Transistor BSS84 Equivalent BSS84 marking code e1 smd

    TRANSISTOR SMD MARKING CODE 1d

    Abstract: SMD TRANSISTOR MARKING 1D TRANSISTOR SMD MARKING CODES PMBTA42 PMBTA92 marking code DG SMD Transistor transistor marking DG SMD TRANSISTOR MARKING .1D
    Text: PMBTA42 300 V, 100 mA NPN high-voltage transistor Rev. 05 — 12 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. PNP complement: PMBTA92.


    Original     		PDF PMBTA42 O-236AB) PMBTA92. PMBTA42 TRANSISTOR SMD MARKING CODE 1d SMD TRANSISTOR MARKING 1D TRANSISTOR SMD MARKING CODES PMBTA92 marking code DG SMD Transistor transistor marking DG SMD TRANSISTOR MARKING .1D

    TRANSISTOR SMD CODE PACKAGE SOT323

    Abstract: TRANSISTOR SMD MARKING CODES MARKING SMD PNP TRANSISTOR 2a PMST3904 PMST3906 pmst3906 transistor smd transistor MARKING 2A npn MARKING CODE SMD IC transistor sc-70 marking codes 1325 pnp
    Text: PMST3906 40 V, 200 mA PNP switching transistor Rev. 05 — 29 April 2009 Product data sheet 1. Product profile 1.1 General description PNP switching transistor in a SOT323 SC-70 very small Surface-Mounted Device (SMD) plastic package. NPN complement: PMST3904.


    Original     		PDF PMST3906 OT323 SC-70) PMST3904. PMST3906 TRANSISTOR SMD CODE PACKAGE SOT323 TRANSISTOR SMD MARKING CODES MARKING SMD PNP TRANSISTOR 2a PMST3904 pmst3906 transistor smd transistor MARKING 2A npn MARKING CODE SMD IC transistor sc-70 marking codes 1325 pnp

    Untitled

    Abstract: No abstract text available
    Text: PMBTA42 300 V, 100 mA NPN high-voltage transistor Rev. 05 — 12 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. PNP complement: PMBTA92.


    Original     		PDF PMBTA42 O-236AB) PMBTA92. PMBTA42

    BLU56

    Abstract: 35XL 809 npn smd 809 x transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU56 UHF power transistor Product specification January 1991 Philips Components Product specification UHF power transistor FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures


    Original     		PDF BLU56 OT223 BLU56 35XL 809 npn smd 809 x transistor

    2n3439ua

    Abstract: SFT343 SMD.22
    Text: SFT3439S.22 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 1 A /450 Volts NPN Switching Transistor DESIGNER’S DATA SHEET SMD.22 Features: • Switching Transistor


    Original     		PDF SFT3439S 2N3439UA MIL-PRF-19500 TR0086A 2n3439ua SFT343 SMD.22

    TRANSISTOR SMD

    Abstract: No abstract text available
    Text: NTE2401 Silicon PNP Transistor RF Stages in FM Front Ends Description: The NTE2401 is a silicon PNP transistor in a plastic SOT–23 type surface mount package designed for use in RF stages in FM front–ends in common base configuration for SMD applications.


    Original     		PDF NTE2401 NTE2401 100MHz TRANSISTOR SMD

    SFT343

    Abstract: No abstract text available
    Text: SFT3439S.22 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 1 A /450 Volts NPN Switching Transistor DESIGNER’S DATA SHEET SMD.22 Features: • Switching Transistor


    Original     		PDF SFT3439S 2N3439UA MIL-PRF-19500 TR0086A SFT343

    PBSS4350D

    Abstract: PBSS5350D
    Text: SO T4 57 PBSS5350D 50 V, 3 A PNP low VCEsat BISS transistor Rev. 5 — 23 March 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5350D OT457 SC-74) PBSS4350D AEC-Q101 PBSS4350D PBSS5350D

    Untitled

    Abstract: No abstract text available
    Text: SO T4 57 PBSS5350D 50 V, 3 A PNP low VCEsat BISS transistor Rev. 6 — 28 June 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5350D OT457 SC-74) PBSS4350D AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: SO T4 57 PBSS5350D 50 V, 3 A PNP low VCEsat BISS transistor Rev. 6 — 28 June 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5350D OT457 SC-74) PBSS4350D AEC-Q101

    2N0605

    Abstract: SPI80N06S2-05 SPB80N06S2-05 SPP80N06S2-05 2N060
    Text: Preliminary data OptiMOSâ Power-Transistor SPI80N06S2-05 SPP80N06S2-05,SPB80N06S2-05 Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • 175°C operating temperature ID • Avalanche rated P-TO262-3-1 max. SMD version P-TO263-3-2 55


    Original     		PDF SPI80N06S2-05 SPP80N06S2-05 SPB80N06S2-05 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP80N06S2-05 Q67040-S4245 2N0605 2N0605 SPI80N06S2-05 SPB80N06S2-05 2N060

    pn06l05

    Abstract: SPB100N06S2L-05 SPB100N06S2L05 SPP100N06S2L-05 Q67060-S6042
    Text: SPP100N06S2L-05 SPB100N06S2L-05 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated Type Package VDS 55 RDS on max. SMD version 4.4


    Original     		PDF SPP100N06S2L-05 SPB100N06S2L-05 P-TO263-3-2 P-TO220-3-1 SPP100N06S2L-05 Q67060-S6043 PN06L05 SPB100N06S2L-05 pn06l05 SPB100N06S2L05 Q67060-S6042

    TRANSISTOR SMD MARKING CODE A45

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount LMSB709LT1G FEATURE ƽSmall plastic SMD package. 3 ƽGeneral purpose amplification. ƽPb-Free Package is available. 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device LMSB709LT1G


    Original     		PDF LMSB709LT1G LMSB709LT3G 3000/Tape 10000/Tape OT-23 TRANSISTOR SMD MARKING CODE A45

    npn smd 3a

    Abstract: SMD BR 17 smd 2a ic SMD TRANSISTOR MARKING 2A 2A marking transistor npn smd 2a smd transistor 2A smd transistor marking br FCX1051A
    Text: Transistors SMD Type NPN Silicon Power Switching Transistor FCX1051A Features 2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 17mv Typ. Extremely low equivalent on-resistance.


    Original     		PDF FCX1051A 100MHz npn smd 3a SMD BR 17 smd 2a ic SMD TRANSISTOR MARKING 2A 2A marking transistor npn smd 2a smd transistor 2A smd transistor marking br FCX1051A

    PN0605

    Abstract: SPB100N06S2-05 SPP100N06S2-05 6E60 Q67060-S6049
    Text: SPP100N06S2-05 SPB100N06S2-05 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 RDS on max. SMD version 4.7 m ID 100 A P-TO263-3-2 Type


    Original     		PDF SPP100N06S2-05 SPB100N06S2-05 P-TO263-3-2 P-TO220-3-1 Q67060-S6048 PN0605 PN0605 SPB100N06S2-05 SPP100N06S2-05 6E60 Q67060-S6049

    2n06l05

    Abstract: SMD CODE G13 IPP80N06S2L-05 2N06 IPB80N06S2L-05 IPI80N06S2L-05 PG-TO263-3-2
    Text: IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.5 mΩ ID 80 A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05 PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 SP0002-19004 2N06L05 2n06l05 SMD CODE G13 IPP80N06S2L-05 2N06 IPB80N06S2L-05 IPI80N06S2L-05 PG-TO263-3-2

    4P0405

    Abstract: IPB80P04P4-05 ipi80p04p4-05 IPP80P04P4-05 PG-TO-220-3-1
    Text: Final Data Sheet IPB80P04P4-05 IPI80P04P4-05, IPP80P04P4-05 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 4.9 mW ID -80 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1


    Original     		PDF IPB80P04P4-05 IPI80P04P4-05, IPP80P04P4-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80P04P4-05 4P0405 IPP80P04P4-05 PG-TO-220-3-1

    2N06L05

    Abstract: INFINEON PART MARKING SPB80N06S2L-05 SPP80N06S2L-05 402VGS
    Text: SPP80N06S2L-05 SPB80N06S2L-05 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on max. SMD version 4.5 mΩ • Logic Level ID 80 A •=175°C operating temperature P-TO263-3-2 • Enhancement mode P-TO220-3-1


    Original     		PDF SPP80N06S2L-05 SPB80N06S2L-05 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4246 2N06L05 P-TO263-3-2 2N06L05 INFINEON PART MARKING SPB80N06S2L-05 SPP80N06S2L-05 402VGS

    2n0605

    Abstract: BSPP80N06S2-05 SPB80N06S2-05 SPP80N06S2-05 6020G 6840H
    Text: SPP80N06S2-05 SPB80N06S2-05 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on max. SMD version 4.8 mΩ •=175°C operating temperature ID 80 A • Avalanche rated P-TO263-3-2 • Enhancement mode P-TO220-3-1


    Original     		PDF SPP80N06S2-05 SPB80N06S2-05 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4245 2N0605 P-TO263-3-2 2n0605 BSPP80N06S2-05 SPB80N06S2-05 SPP80N06S2-05 6020G 6840H

    PN06L05

    Abstract: ANPS071E SPB100N06S2L-05 SPP100N06S2L-05 Q67060-S6043
    Text: SPP100N06S2L-05 SPB100N06S2L-05 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • Logic Level P- TO263 -3-2 • 175°C operating temperature 55 V 4.4 mΩ 100 A P- TO220 -3-1 • Avalanche rated


    Original     		PDF SPP100N06S2L-05 SPB100N06S2L-05 SPP100N06S2L-05 Q67060-S6043 SPB100N06S2L-05 Q67060-S6042 PN06L05 BSPP100N06S2L-05 BSPB100N06S2L-05, PN06L05 ANPS071E Q67060-S6043

    transistor smd LC 77

    Abstract: smd transistor ISS smd transistor 2x5 BLT81 smd transistor ISS 7 MAM043 C4901
    Text: Philips Semiconductors Product specif ication UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. APPLICATIONS • Hand-held radio equipment in the 900 MHz communication band. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a


    OCR Scan     		PDF BLT81 OT223 OT223 MAM043- 7110fl2b MRC089 711Dfl2b S0T223. 711002b transistor smd LC 77 smd transistor ISS smd transistor 2x5 BLT81 smd transistor ISS 7 MAM043 C4901

    transistor smd MJ 145

    Abstract: d 132 smd code diode d 132 smd diode qd SMD SMD TRANSISTOR qd BUZ31 smd rgs smd diode 145
    Text: Infineon technologies BUZ 31 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated tab Pin 1 Pin 2 Pin 3 D Type Vds ¡D ^DS(on) Package Ordering Code BUZ 31 SMD 200 V 14.5 A 0.2 Q D:PAK Q67042-S4131 Maximum Ratings Parameter


    OCR Scan     		PDF q67042-s4131 np-60 transistor smd MJ 145 d 132 smd code diode d 132 smd diode qd SMD SMD TRANSISTOR qd BUZ31 smd rgs smd diode 145

    6 pin TRANSISTOR SMD CODE PA

    Abstract: BUZ22 smd code buz smd rgs BUZ22 SMD BUZ22SMD Diode smd code sm PH smd transistor PH smd transistor A7J TRANSISTOR SMD XD
    Text: Infineon technologies BUZ 22 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 D BUZ 22 SMD </ Type 100 V 34 A ^D S on) Package Ordering Code 0.055 Í2 d 2p a k Q67042-S4139 Maximum Ratings Parameter Symbol


    OCR Scan     		PDF BUZ22SMD q67042-s4139 DsJ14 6 pin TRANSISTOR SMD CODE PA BUZ22 smd code buz smd rgs BUZ22 SMD BUZ22SMD Diode smd code sm PH smd transistor PH smd transistor A7J TRANSISTOR SMD XD