MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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TRANSISTOR SMD MARKING g1
Abstract: CMBT5551 smd transistor g1
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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ISO/TS16949
OT-23
CMBT5551
C-120
TRANSISTOR SMD MARKING g1
CMBT5551
smd transistor g1
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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OT-23
CMBT5551
C-120
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TRANSISTOR SMD MARKING g1
Abstract: SMD TRANSISTOR G1 g1 smd transistor smd transistor t A1 sot-23 npn ts 4141 TRANSISTOR smd cmbt5551 MARKING SMD TRANSISTOR P smd transistor 304 smd transistor marking g1 TRANSISTOR SMD g1
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
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OT-23
CMBT5551
C-120
TRANSISTOR SMD MARKING g1
SMD TRANSISTOR G1
g1 smd transistor
smd transistor t A1 sot-23 npn
ts 4141 TRANSISTOR smd
cmbt5551
MARKING SMD TRANSISTOR P
smd transistor 304
smd transistor marking g1
TRANSISTOR SMD g1
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transisto r Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
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OT-23
CMBT5551
C-120
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Untitled
Abstract: No abstract text available
Text: DF N1 10B -6 PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 7 October 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic
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PMCXB900UE
DFN1010B-6
OT1216)
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Untitled
Abstract: No abstract text available
Text: NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 11 November 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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NX3020NAKS
OT363
SC-88)
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TSSOP-6
Abstract: marking 34 TSSOP6 NXP smd marking Yd
Text: PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 18 April 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMGD290UCEA
OT363
AEC-Q101
TSSOP-6
marking 34 TSSOP6 NXP
smd marking Yd
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smd diode marking 2U
Abstract: smd diode marking codes 2U smd diode code marking 2U marking 2U 28 diode DIODE smd marking 2U diode SMD marking code 2u 2U marking code diode smd smd diode marking 2U 40 marking 2U diode smd
Text: PMDPB95XNE 30 V dual N-channel Trench MOSFET 26 September 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB95XNE
DFN2020-6
OT1118)
smd diode marking 2U
smd diode marking codes 2U
smd diode code marking 2U
marking 2U 28 diode
DIODE smd marking 2U
diode SMD marking code 2u
2U marking code diode smd
smd diode marking 2U 40
marking 2U diode smd
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Untitled
Abstract: No abstract text available
Text: PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 28 March 2014 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMGD290UCEA
OT363
AEC-Q101
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NXP SMD TRANSISTOR MARKING CODE s1
Abstract: No abstract text available
Text: PMDPB38UNE 20 V dual N-channel Trench MOSFET 26 September 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB38UNE
DFN2020-6
OT1118)
NXP SMD TRANSISTOR MARKING CODE s1
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smd transistor marking g1
Abstract: TRANSISTOR SMD MARKING g1 smd transistor g1
Text: Transistors Transistor T SMD Type Product specification KMBT5551 MMBT5551 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Pb-Free Packages are Available 1 0.55 High Voltage Transistors +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base
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KMBT5551
MMBT5551)
OT-23
100MHz
smd transistor marking g1
TRANSISTOR SMD MARKING g1
smd transistor g1
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TSSOP-8 footprint
Abstract: KI8205A g1 smd transistor SMD TRANSISTOR G1 MOSFET TSSOP-8 dual n-channel smd transistor S1 1A smd mosfet 78 DIODE SMD MOSFET TSSOP-8 smd diode JC
Text: MOSFET SMD Type Dual N-Channel Enhancement Mode Field Effect Transistor KI8205A TSSOP-8 Features Unit: mm ● Small footprint due to small and thin package ● Low drain-source ON resistance: r DS on = 0.025 @ VGS = 4.5 V Max rDS(on) = 0.029 @ VGS = 2.5V Max
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KI8205A
TSSOP-8 footprint
KI8205A
g1 smd transistor
SMD TRANSISTOR G1
MOSFET TSSOP-8 dual n-channel
smd transistor S1
1A smd mosfet
78 DIODE SMD
MOSFET TSSOP-8
smd diode JC
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TRANSISTOR SMD MARKING CODE 1v
Abstract: NXP SMD TRANSISTOR MARKING CODE s1
Text: PMDPB30XN 20 V, dual N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB30XN
DFN2020-6
OT1118)
TRANSISTOR SMD MARKING CODE 1v
NXP SMD TRANSISTOR MARKING CODE s1
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Untitled
Abstract: No abstract text available
Text: DF N1 01 0B -6 NX7002BKXB 60 V, dual N-channel Trench MOSFET 10 December 2014 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
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NX7002BKXB
DFN1010B-6
OT1216)
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mosfet SMD MARKING CODE 352
Abstract: No abstract text available
Text: PMGD130UN 20 V, dual N-channel Trench MOSFET Rev. 1 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMGD130UN
OT363
mosfet SMD MARKING CODE 352
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Untitled
Abstract: No abstract text available
Text: NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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NX3020NAKS
OT363
SC-88)
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MOSFET TRANSISTOR SMD MARKING CODE 11
Abstract: NXP SMD TRANSISTOR MARKING CODE s1
Text: DF N1 10B -6 PMDXB600UNE 20 V, dual N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
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PMDXB600UNE
DFN1010B-6
OT1216)
MOSFET TRANSISTOR SMD MARKING CODE 11
NXP SMD TRANSISTOR MARKING CODE s1
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Untitled
Abstract: No abstract text available
Text: DF N1 10B -6 PMDXB950UPE 20 V, dual P-channel Trench MOSFET 10 September 2013 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
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PMDXB950UPE
DFN1010B-6
OT1216)
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nxp pmgd780sn
Abstract: PMGD780SN
Text: PMGD780SN Dual N-channel TrenchMOS standard level FET Rev. 02 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect transistor in a small SOT363 SC-88 Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.
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PMGD780SN
OT363
SC-88)
PMGD780SN
nxp pmgd780sn
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NXP SMD TRANSISTOR MARKING CODE s1
Abstract: No abstract text available
Text: DF N2 020 -6 PMDPB760EN 100 V, dual N-channel Trench MOSFET 29 May 2013 Objective data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
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PMDPB760EN
DFN2020-6
OT1118)
NXP SMD TRANSISTOR MARKING CODE s1
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SMD Transistor g16
Abstract: marking G16 marking g16 sot23 g16 sot23 smd transistor marking 26 smd transistor 26 2SK1590 5V GATE TO SOURCE VOLTAGE MOSFET
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK1590 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 impedance. 0.55 Not necessary to consider driving current because of its high input +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 5V power supply. 0.4
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2SK1590
OT-23
SMD Transistor g16
marking G16
marking g16 sot23
g16 sot23
smd transistor marking 26
smd transistor 26
2SK1590
5V GATE TO SOURCE VOLTAGE MOSFET
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Untitled
Abstract: No abstract text available
Text: 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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2N7002BKV
OT666
AEC-Q101
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