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    TRANSISTOR SMD ND 16 Search Results

    TRANSISTOR SMD ND 16 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SMD ND 16 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    capacitor 10uF/63V

    Abstract: capacitor 220uF/63V J152 100 pf, ATC Chip Capacitor pF CAPACITOR 100v 100b*500x 10uf 63v capacitor capacitor 1206 63V ID Innovations resistor smd 1206 102
    Text: The innovative Semiconductor Company! HVV0912-150 HIGH VOLTAGE, HIGH RUGGEDNESS L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V


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    HVV0912-150 429-HVVi EG-01-DS11B capacitor 10uF/63V capacitor 220uF/63V J152 100 pf, ATC Chip Capacitor pF CAPACITOR 100v 100b*500x 10uf 63v capacitor capacitor 1206 63V ID Innovations resistor smd 1206 102 PDF

    R/transistor smd r21

    Abstract: No abstract text available
    Text: Application Note 1607 ISL8120EVAL4Z Evaluation Board Setup Procedure FIGURE 1. ISL8120EVAL4Z EVALUATION BOARD The ISL8120 integrates two voltage-mode synchronous buck PWM controllers. It can be used either for dual independent outputs or a 2-phase single-output regulator.


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    ISL8120EVAL4Z ISL8120 ISL8120EVAL3Z AN1528 AN1607 ISL8120EVAL4Z R/transistor smd r21 PDF

    Untitled

    Abstract: No abstract text available
    Text: DB-54008L-175 RF POWER Amplifier using 1 x PD54008L N-Channel Enhancement-Mode Lateral MOSFETs General feature • Excellent Thermal Stability ■ Frequency: 135 - 175 MHz ■ Supply Voltage: 7.2V ■ Output Power: 8W ■ Power Gain: 16.2 ± 1.7dB ■ Efficiency: 56% - 57%


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    DB-54008L-175 PD54008L DB-54008L-175 PDF

    smd code ND e3

    Abstract: No abstract text available
    Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE


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    PD55035 PD55035S PowerSO-10RF. smd code ND e3 PDF

    smd code ND e3

    Abstract: No abstract text available
    Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE


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    PD55035 PD55035S PowerSO-10RF. smd code ND e3 PDF

    S12237-02P

    Abstract: No abstract text available
    Text: NEWS 01 2013 ELECTRON TUBE PRODUCTS PAGE 21 From Macro to Micro OPTO-SEMICONDUCTOR PRODUCTS Photo ICs for MOST 150 Optical Link PAGE 16 ELECTRON TUBE PRODUCTS Compact 2 W Xenon Flash Lamp Modules PAGE 25 SYSTEMS PRODUCTS Digital Camera ORCA-Flash4.0 PAGE 36


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    PDF

    smd zener diode code 20w

    Abstract: DB-900-100W ceramic capacitor 100nF 50 63v rf amplifier 100w capacitor 100nf 63v PD57060s zener 20w smd diode 1w ATC100B capacitor smd gp 542
    Text: DB-900-100W 100W / 26V / 869-894 MHz PA using 2x PD57060S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 100 W min. with 13 dB gain over


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    DB-900-100W PD57060S IS-95 DB-900-100W IS-54/-136 IS-95 smd zener diode code 20w ceramic capacitor 100nF 50 63v rf amplifier 100w capacitor 100nf 63v PD57060s zener 20w smd diode 1w ATC100B capacitor smd gp 542 PDF

    smd zener diode code 20w

    Abstract: rf power amplifier 100w zener 20w smd diode 1w capacitor 100nf 63v PD57060s rf amplifier 100w smd code ND ATC100B DB-900-100W XPD57060S
    Text: DB-900-100W RF POWER AMPLIFIER using 2 x PD57060S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 100 W min. with 13 dB gain over


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    DB-900-100W PD57060S IS-95 DB-900-100W IS-54/-136 IS-95 smd zener diode code 20w rf power amplifier 100w zener 20w smd diode 1w capacitor 100nf 63v PD57060s rf amplifier 100w smd code ND ATC100B XPD57060S PDF

    Z9 TRANSISTOR SMD

    Abstract: arco 406 6 pin TRANSISTOR SMD Z8
    Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE


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    PD55035 PD55035S PowerSO-10RF. Z9 TRANSISTOR SMD arco 406 6 pin TRANSISTOR SMD Z8 PDF

    smd transistor 647

    Abstract: smd transistor 2x smd zener diode code 20w TRANSISTOR SMD 2X SMD Transistor 30w TRANSISTOR SMD 2x 6 R222.900.100W
    Text: DB-900-100W 100W / 26V / 869-894 MHz PA using 2x PD57060S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 100 W min. with 13 dB gain over


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    DB-900-100W PD57060S IS-95 DB-900-100W IS-54/-136 smd transistor 647 smd transistor 2x smd zener diode code 20w TRANSISTOR SMD 2X SMD Transistor 30w TRANSISTOR SMD 2x 6 R222.900.100W PDF

    PD550

    Abstract: arco 406 transistor SMD 520
    Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE


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    PD55035 PD55035S PowerSO-10RF. PD550 arco 406 transistor SMD 520 PDF

    anaren 1304

    Abstract: ATC100B 4.7pf W50 SMD PD57045S ATC100B DB-900-80W zener diode 5v PD57045 10k potentiometer 1206 smd resistor transistor smd code 404
    Text: DB-900-80W 80W / 26V / 869-894 MHz PA using 2x PD57045S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 80 W min. with 13 dB gain over


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    DB-900-80W PD57045S IS-95 DB-900-80W IS-54/-136 anaren 1304 ATC100B 4.7pf W50 SMD PD57045S ATC100B zener diode 5v PD57045 10k potentiometer 1206 smd resistor transistor smd code 404 PDF

    226 smd capacitor

    Abstract: transistor smd code 404
    Text: DB-900-80W 80W / 26V / 869-894 MHz PA using 2x PD57045S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 80 W min. with 13 dB gain over


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    DB-900-80W PD57045S IS-95 DB-900-80W IS-54/-136 226 smd capacitor transistor smd code 404 PDF

    transistor smd nd 16

    Abstract: PD57045S ATC100B DB-900-80W 1uf 500v capacitor xinger 226 smd capacitor transistor smd code 404
    Text: DB-900-80W RF POWER AMPLIFIER using 2 x PD57045S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 80 W min. with 13 dB gain over


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    DB-900-80W PD57045S IS-95 DB-900-80W IS-54/-136 transistor smd nd 16 PD57045S ATC100B 1uf 500v capacitor xinger 226 smd capacitor transistor smd code 404 PDF

    capacitor 100pf

    Abstract: No abstract text available
    Text: DB-900-100W RF POWER AMPLIFIER using 2 x PD57060S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 100 W min. with 13 dB gain over 869-894 MHz • 10:1 LOAD VSWR CAPABILITY


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    DB-900-100W PD57060S DB-900-100W IS-54/-136 IS-95 capacitor 100pf PDF

    ATC100B

    Abstract: capacitor 100pf ED135
    Text: DB-900-80W RF POWER AMPLIFIER using 2 x PD57045S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 80 W min. with 13 dB gain over 869-894 MHz • 10:1 LOAD VSWR CAPABILITY


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    DB-900-80W PD57045S DB-900-80W IS-54/-136 IS-95 ATC100B capacitor 100pf ED135 PDF

    A21 SMD transistor

    Abstract: SMD transistor A24 variable resistor 10w SMD Transistor p37 transistor SMD p02 transistor SMD p04 293D106X9010A transistor P36 smd plc transceiver 600W TVS 33V BI-DIR
    Text: CY3275 Cypress Low Voltage Programmable Powerline Communication Development Kit Guide Doc. # 001-53657 Rev. *B Cypress Semiconductor 198 Champion Court San Jose, CA 95134-1709 Phone USA : 800.858.1810 Phone (Intnl): 408.943.2600 http://www.cypress.com [+] Feedback


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    CY3275 LM317MTG LM317MTGOSND 190MHz LMH6639MF/ LMH6639MFCT RS-232 MAX3232ECDR 296-19851-2ND C3290-24 A21 SMD transistor SMD transistor A24 variable resistor 10w SMD Transistor p37 transistor SMD p02 transistor SMD p04 293D106X9010A transistor P36 smd plc transceiver 600W TVS 33V BI-DIR PDF

    Untitled

    Abstract: No abstract text available
    Text: PD55035-E PD55035S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V ■ New RF plastic package


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    PD55035-E PD55035S-E PowerSO-10RF PDF

    PD55035-E

    Abstract: PD55035 PD55035S ST AN1294 PD55035S PD55035S-E PD55035STR-E PD55035TR-E C1162
    Text: PD55035-E PD55035S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 35W with 16.9dB gain @ 500MHz / 12.5V ■ New RF plastic package


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    PD55035-E PD55035S-E 500MHz PowerSO-10RF PD55035 PowerSO-10Rand PD55035-E PD55035S ST AN1294 PD55035S PD55035S-E PD55035STR-E PD55035TR-E C1162 PDF

    AN1294

    Abstract: J-STD-020B PD55035-E PD55035S-E PD55035STR-E PD55035TR-E
    Text: PD55035-E PD55035S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V ■ New RF plastic package


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    PD55035-E PD55035S-E PowerSO-10RF PowerSO10RF. AN1294 J-STD-020B PD55035-E PD55035S-E PD55035STR-E PD55035TR-E PDF

    capacitor 47pf

    Abstract: SMD Transistor w30
    Text: DB-900-60W 60W / 26V / 869-894 MHz using 1x PD57070S The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 60W WITH 13 dB GAIN OVER 869 894 MHz ■ 10:1 LOAD VSWR CAPABILITY ■ BeO FREE AMPLIFIER Description


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    DB-900-60W PD57070S DB-900-60W IS-54/-136 IS-95 capacitor 47pf SMD Transistor w30 PDF

    DB-55008L-470

    Abstract: EXCELDRC35C GRM42-6C0G102J50 PD55008L PD55008L-E
    Text: DB-55008L-470 Evaluation board using PD55008L-E for UHF mobile radio Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 12.5 V ■ Output power: 8 W ■ Power gain: 16.7 ± 2.0 dB ■ Efficiency: 49 % - 61 % ■ Load mismatch: 20:1


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    DB-55008L-470 PD55008L-E DB-55008L-470 PD55008L-E, EXCELDRC35C GRM42-6C0G102J50 PD55008L PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification T renchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level fleld-effect power transistor In a plastic envelope suitable for surface mounting. Using ’trench’ technology the device


    OCR Scan
    BUK7615-100A SQT404 PDF

    TRANSISTOR SMD MARKING CODE XI

    Abstract: 2l TRANSISTOR SMD MARKING CODE 4728 stepper 434 TRANSISTOR SMD MARKING CODE 352 Lxx 05 smd TRANSISTOR SMD MARKING CODE 7A IED01890 IEP01211 IET01883
    Text: SIEM EN S 2-Phase Stepper-Motor Driver TLE 4728 G Overview Bipolar-IC Features • 2 x 0.7 amp. full bridge outputs • Integrated driver, control logic and current control chopper • Fast free-wheeling diodes • Max. supply voltage 45 V • Output stages are free of crossover current


    OCR Scan
    P-DSO-24-3 IQ67006-A9077 235bOS 0103bM5 H-HlTC2l24x 023Sb05 0103b4b TRANSISTOR SMD MARKING CODE XI 2l TRANSISTOR SMD MARKING CODE 4728 stepper 434 TRANSISTOR SMD MARKING CODE 352 Lxx 05 smd TRANSISTOR SMD MARKING CODE 7A IED01890 IEP01211 IET01883 PDF