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    TRANSISTOR SMD QQ Search Results

    TRANSISTOR SMD QQ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SMD QQ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    74 hc 59581

    Abstract: b768 transistor transistor smd 661 752 8 pin ic base socket round pin type lead 652B0082215-002 MM5231 702 transistor smd code LA9100 LGA 1155 Socket PIN diagram smd transistor w16
    Text: 717 Technical portal and online community for Design Engineers - www.element-14.com Semiconductor Hardware & Thermal Management Page Page 727 725 725 732 739 732 749 736 725 724 723 723 724 721 720 722 726 752 728 751 Crystal Oscillator Sockets . . . . . . . . . . . . . . . . . .


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    PDF element-14 74 hc 59581 b768 transistor transistor smd 661 752 8 pin ic base socket round pin type lead 652B0082215-002 MM5231 702 transistor smd code LA9100 LGA 1155 Socket PIN diagram smd transistor w16

    transistor SMD MARKING CODE HF

    Abstract: smd code HF transistor
    Text: • bbS3T31 0DE470fl 14fl ■ APX N AUER PHILIPS/DISCRETE BF824 b7E D 7 V H.F. SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic SOT-23 envelope especially intended for r.f. stages in f.m. front-ends in common base configuration for SMD applications.


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    PDF bbS3T31 0DE470fl BF824 OT-23 bb53131 0DEM711 7Z72155 7Z72159 D024712 transistor SMD MARKING CODE HF smd code HF transistor

    02p SMD TRANSISTOR

    Abstract: No abstract text available
    Text: • bbS3131 002315=1 56H « A P X N AUER PHILIPS/DISCRETE BST82 b7E D y v . N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device SMD in thin and thick-film circuits for telephone ringer and for application


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    PDF bbS3131 BST82 175DSon 02p SMD TRANSISTOR

    smd diode T42

    Abstract: smd transistor 718
    Text: SIEMENS BUZ 102AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • di//di rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ 102AL Vds 50 V b flDS on


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    PDF 102AL O-220 C67078-S1356-A2 l45bfi fl23Sb05 235bOS smd diode T42 smd transistor 718

    buz102

    Abstract: No abstract text available
    Text: SIEMENS BUZ 102 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/d/ rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 Pin 2 Type Vbs BUZ102 50 V b 42 A Pin 3 D G S ^DS on


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    PDF O-220 BUZ102 C67078-S1351-A2 fl23Sb05 023Sfc 35bQ5 00fl45b buz102

    smd TRANSISTOR 27e

    Abstract: TRANSISTOR SMD a38 smd 27E
    Text: dUALITY. TE CHN OLOGIES CORP 27E D 74bt.flSl QQ03M37 4 VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS QUALITY TECHNOLOGIES T ~ 4 I- CNY17F1/1Z CNY17F2/2Z CNY17F3/3Z DESCRIPTION PACKAGE DIMENSIONS The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor.


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    PDF QQ03M37 CNY17F1/1Z CNY17F2/2Z CNY17F3/3Z CNY17 CNY17F1: CNY17F2: CNY17F3: E50151 ii54i smd TRANSISTOR 27e TRANSISTOR SMD a38 smd 27E

    907 TRANSISTOR smd

    Abstract: smd transistor 547 smd transistor code 314 703 TRANSISTOR smd TRANSISTOR SMd jg data T3D 97 SMD CODE SOT89 lc T3D 63 BFQ149 transistor smd pnp 526
    Text: e , „ Philips Semiconductors • bbSBTBl QQESIOM TT4 _ N A*£F? P M I L T P s T p i s C R E T E h a p x b7E Product specification D PNP 5 GHz wideband transistor DESCRIPTION £ BFQ149 PINNING PNP transistor in a SOT89 envelope. It is intended for use in


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    PDF BFQ149 MSB013 907 TRANSISTOR smd smd transistor 547 smd transistor code 314 703 TRANSISTOR smd TRANSISTOR SMd jg data T3D 97 SMD CODE SOT89 lc T3D 63 BFQ149 transistor smd pnp 526

    Untitled

    Abstract: No abstract text available
    Text: 8535bOS QQIbblS SÔT SIEMENS 5-V Low-Drop Fixed Voltage Regulator TLE 4279 Features Output voltage tolerance < ± 2 % Very low current consumption Early warning Reset output low down to VQ= 1 V Overtemperature protection Reverse polarity proof Settable reset threshold


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    PDF 8535bOS Q67006-A9225 Q67006-A9307 Q67006-A9306 P-DSO-14-4 P-DSO-20-6 flS35bOS 35x45Â Ml20x

    smd transistor ne c2

    Abstract: smd transistor zi capacitor MKT Philips capacitor 400 MKT philips SMD Capacitor symbols transistor smd Catalogue capacitor variable ceramic variable capacitor Tekelec TO aeg b2 60 52 30
    Text: DISCRETE SEMICONDUCTORS E>^m S ln lE E T BLF2048 UHF push-pull power LDMOS transistor Preliminary specification Supersedes data of 1999 Dec 01 Philips Sem iconductors 2000 Feb 17 PHILIPS Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor


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    PDF BLF2048 OT539A smd transistor ne c2 smd transistor zi capacitor MKT Philips capacitor 400 MKT philips SMD Capacitor symbols transistor smd Catalogue capacitor variable ceramic variable capacitor Tekelec TO aeg b2 60 52 30

    smd transistor ds 65

    Abstract: BSN20 transistor SMD QQ smd transistor 142
    Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSN20 FEATURES PINNING - SOT23 • Direct interface to C-MOS, TTL, etc. PIN SYMBOL DESCRIPTION a gate 2 s source 3 d drain • High-speed switching 1 • No secondary breakdown.


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    PDF BSN20 1997Jun BA782 smd transistor ds 65 BSN20 transistor SMD QQ smd transistor 142

    BTS 410 E2 E3043

    Abstract: BTS 437 410e2 BTS410F2 Diode smd code f2 diode zener zp v2 1S77 235L 410H BTS410
    Text: fl235b05 QQB1S7S G5L S IE M E N S PROFET BTS410F2 Smart Highside Power Switch F eatures • • • • • • • • • • • • • P ro d u c t S um m ary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation


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    PDF fl235b05 BTS410F2 O-22QAB/5 Q67060-S6103-A2 O-22QAB/5, E3043 E3043 Q67060-S6103-A3 E3062 BTS 410 E2 E3043 BTS 437 410e2 BTS410F2 Diode smd code f2 diode zener zp v2 1S77 235L 410H BTS410

    HS9-705RH-Q

    Abstract: HS-705RH 705RH rad hard reset ld smd transistor tbdm
    Text: ifiRRis f H S-705RH Sem icon ductor ADVANCE INFORMATION Radiation Hardened Power-On uP Reset Circuit March 1999 Features Description • Electrically Screened to DESC SMD # 5962-98xxx Please forward any input regarding packaging, cir­ cuit requirements, target specifications or features


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    PDF S-705RH HS-705RH HS9-705RH-Q 705RH rad hard reset ld smd transistor tbdm

    Untitled

    Abstract: No abstract text available
    Text: ACS138MS Semiconductor Radiation Hardened 3-to-8 Line Decoder/Demultiplexer December 1997 Features Description • QM L Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS138MS is an Inverting 3-to-8 Line Decoder/Demultiplexer with three binary select inputs


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    PDF ACS138MS MIL-PRF-38535 ACS138MS 25Micron 2390nm 2390nm 525nm ACS138M

    transistor 2y0

    Abstract: CDIP2-T16
    Text: ACS139MS Semiconductor Radiation Hardened Dual 2-to-4 Line D ecoder/D em ultiplexer November 1997 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS139MS contains two indepen­ dent binary to one-of-four decoders, each with a single active


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    PDF ACS139MS MIL-PRF-38535 ACS139MS 25Micron 2390nm 2390nm 525nm ACS139MS. transistor 2y0 CDIP2-T16

    Untitled

    Abstract: No abstract text available
    Text: HS-2100RH Data Sheet Radiation Hardened High Frequency Half Bridge Driver The Radiation Hardened HS-2100RH is a high frequency, 100V Half Bridge N-Channel MOSFET Driver IC, which is a functional, pin-to-pin replacement for the Harris HIP2500 and the industry standard 2110 types. The low-side and


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    PDF HS-2100RH HS-2100RH HIP2500 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: ACS157MS Semiconductor Radiation Hardened Quad 2-Input Non-Inverting Multiplexer December 1997 Features Description • QM L Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS157MS is a Quad 2-Channel Non-Inverting Multiplexer which selects four bits of data from


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    PDF ACS157MS MIL-PRF-38535 ACS157MS 25Micron 2390nm 2390nm 525nm

    SMD Transistor 1c

    Abstract: smd transistor xf 4266G transistor a018
    Text: SIEM ENS flE3SbOS OORbSbS b b l 5-V Low-Drop Voltage Regulator TLE 4266 G Bipolar 1C Features • • • • • • • • Output voltage tolerance < ± 2 % Very low current consumption Low-drop voltage Overtemperature protection Reverse polarity proof


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    PDF Q67006-A9152 P-SOT223-4-2 P-SOT223-4-2 SMD Transistor 1c smd transistor xf 4266G transistor a018

    CDFP4-F20

    Abstract: No abstract text available
    Text: ACS240MS Semiconductor Radiation Hardened Inverting, Octal, Three-State Buffer/Line Driver March 1998 Features Description • QM L Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS240MS is an Inverting, Octal, Three-State Buffer/Line Driver with two active-LOW Enable


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    PDF ACS240MS MIL-PRF-38535 ACS240MS 25Micron 2540nm 2540nm 100mils) 525nm CDFP4-F20

    Untitled

    Abstract: No abstract text available
    Text: ACS244MS Semiconductor Radiation Hardened Non-Inverting, Octal, Three-State Buffer/Line Driver March 1998 Features Description • QM L Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS244MS is a Non-Inverting, Octal, Three-State Buffer/Line Driver with two active-LOW


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    PDF ACS244MS MIL-PRF-38535 ACS244MS 25Micron 2540nm 2540nm 100mils) 525nm

    cdfp4-f16

    Abstract: smd transistor 1y 3H SMD transistor 2Y SMD
    Text: ACS157MS Semiconductor Radiation Hardened Quad 2-Input Non-Inverting Multiplexer December 1997 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS157MS is a Quad 2-Channei Non-inverting Multiplexer which selects four bits of data from


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    PDF ACS157MS ACS157MS cdfp4-f16 smd transistor 1y 3H SMD transistor 2Y SMD

    CDFP4-F20

    Abstract: CDIP2-T20 AI220 SAP 17 TRANSISTOR 5962F9854101VXC smd transistor 2T smd transistor a01 ACS244MS
    Text: ACS244MS Semiconductor Radiation Hardened Non-Inverting, Octal, Three-State Buffer/Line Driver March 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS244MS is a Non-inverting, Octal, Three-State Buffer/Line Driver with two active-LOW


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    PDF ACS244MS ACS244MS 100mils) CDFP4-F20 CDIP2-T20 AI220 SAP 17 TRANSISTOR 5962F9854101VXC smd transistor 2T smd transistor a01

    Untitled

    Abstract: No abstract text available
    Text: ACS151MS HARRIS S E M I C O N D U C T O R Radiation Hardened 8-Input Multiplexer November 1997 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS151MS is an 8-Channel Multi­ plexer having three binary control inputs and an active low


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    PDF ACS151MS MIL-PRF-38535 ACS151MS 25Micron IS09000

    smd transistor 2y

    Abstract: CDIP2-T16 CDIP2-T16 DIMENSIONS cdfp4-f16 3Y SMD 2h smd transistor
    Text: ACS257MS S MAEESS Radiation Hardened Quad 2-Input M ultiplexer with Three-State Outputs November 1997 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS257MS is a Quad 2-Channel multiplexer which selects four bits of data from one of two


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    PDF MIL-PRF-38535 25Micron 100MeV/ IS09000 smd transistor 2y CDIP2-T16 CDIP2-T16 DIMENSIONS cdfp4-f16 3Y SMD 2h smd transistor

    BSP030

    Abstract: TRANSISTOR ML SMD MGD72
    Text: DISCRETE SEMICONDUCTORS BSP030 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jan 20 File under Discrete Semiconductors, SC07 Philips Semiconductors 1997 Mar 13 PHILIPS Philips Semiconductors Product specification


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    PDF BSP030 OT223 OT223. BSP030 TRANSISTOR ML SMD MGD72