TRANSISTOR SOT23 CR Search Results

TRANSISTOR SOT23 CR Result Highlights (5)

Part	Manufacturer	Description
TBAW56	Toshiba Electronic Devices & Storage Corporation	Switching Diode, 80 V, 0.215 A, SOT23
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini

TRANSISTOR SOT23 CR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: A Product Line of Diodes Incorporated FMMT491Q 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. • Case: SOT23	Original	FMMT491Q J-STD-020 MIL-STD-202, DS37009	PDF
Untitled Abstract: No abstract text available Text: A Product Line of Diodes Incorporated FMMT591Q 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features Case: SOT23	Original	FMMT591Q J-STD-020 DS37010	PDF
K1 transistor Abstract: No abstract text available Text: A Product Line of Diodes Incorporated FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 50A Peak Avalanche Current Pulse width = 20ns BVCES > 150V • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound.	Original	FMMT413 J-STD-020 MILSTD-202, DS33083 K1 transistor	PDF
Untitled Abstract: No abstract text available Text: A Product Line of Diodes Incorporated FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 60A Peak Avalanche Current Pulse width = 20ns BVCES > 260V (415) & 320V (417) • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound	Original	FMMT415 FMMT417 AEC-Q101 J-STD-020 FMMT415-FMMT417 DS33084	PDF
STT817 Abstract: st17 SOT-23-6LTSOP-6 Text: STT817 PNP SILICON POWER TRANSISTOR PRELIMINARY DATA • SURFACE-MOUNTING SOT23-6L PACKAGE IN TAPE & REEL APPLICATIONS CHARGE POWER SWITCH FOR MOBILE PHONE ■ DESCRIPTION The device is manufactured using Epitaxial Planar Technology. SOT23-6L TSOP6 INTERNAL SCHEMATIC DIAGRAM	Original	STT817 OT23-6L OT23-6L STT817 st17 SOT-23-6LTSOP-6	PDF
MMBT5401 Abstract: No abstract text available Text: MMBT5401 150V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data •   Epitaxial Planar Die Construction Complementary NPN Type - MMBT5551 Ideal for Low Power Amplification and Switching  Case: SOT23  Case material: molded plastic, “Green” molding compound	Original	MMBT5401 MMBT5551 J-STD-020 AEC-Q101 MIL-STD-202, DS30057 MMBT5401	PDF
K1M 103 Abstract: AECQ-101 AECQ101 k1R diodes bc847c K1R SOT23 20/capacitor K1M 103 Text: BC846A-BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion  Case: SOT23  Complementary PNP Types Available BC856 – BC858  Case material: molded plastic, “Green” molding compound	Original	BC846A-BC848C BC856 BC858) AEC-Q101 J-STD-020 MIL-STD-202, BC846A BC848C DS11108 K1M 103 AECQ-101 AECQ101 k1R diodes bc847c K1R SOT23 20/capacitor K1M 103	PDF
Untitled Abstract: No abstract text available Text: A Product Line of Diodes Incorporated BCW66H 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > 45V  Case: SOT23  IC = 800mA High Continuous Collector Current  Case Material: molded plastic, “Green” molding compound	Original	BCW66H 800mA 300mV 100mA BCW68H J-STD-020 AEC-Q101 DS33003	PDF
BFS17A Abstract: MSB003 E2p transistor Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage	Original	BFS17A September1995 MSB003 R77/02/pp9 BFS17A MSB003 E2p transistor	PDF
k3b transistor Abstract: BC858C Text: BC856A-BC858C PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion  Case: SOT23  Complementary NPN Types Available BC846 – BC848  Case material: molded plastic, “Green” molding compound	Original	BC856A-BC858C BC846 BC848) AEC-Q101 J-STD-020 MIL-STD-202, BC856A BC858C DS112072 k3b transistor BC858C	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage APPLICATIONS	Original	BFS17A September1995 MSB003 R77/02/pp9	PDF
K1p TRANSISTOR Abstract: No abstract text available Text: MMBT2222A 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Epitaxial Planar Die Construction • • Complementary PNP Type: MMBT2907A • • Ideal for Low Power Amplification and Switching Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound	Original	MMBT2222A MMBT2907A AEC-Q101 J-STD-020 MIL-STD202, DS30041 K1p TRANSISTOR	PDF
ic 7495 Abstract: No abstract text available Text: A Product Line of Diodes Incorporated ZXTP25060BFH 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • BVCEO > -60V Breakdown Voltage • Case: SOT23 • 100V forward blocking voltage • Case material: molded Plastic. “Green” molding Compound.	Original	ZXTP25060BFH -85mV ZXTN25060BFH AEC-Q101 DS33374 ic 7495	PDF
k5c transistor Abstract: 103 k5c TRANSISTOR K5C Text: BC807-16/-25/-40 45V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion  Case: SOT23  Epitaxial Planar Die Construction  Case Material: Molded Plastic, “Green” Molding Compound  Complementary NPN Types Available BC817	Original	BC807-16/-25/-40 BC817) J-STD-020 AEC-Q101 DS11208 k5c transistor 103 k5c TRANSISTOR K5C	PDF

Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT BFS17 NPN 1 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage APPLICATIONS	Original	BFS17 MSB003 R77/02/pp8	PDF
SOT23 JEDEC standard orientation Abstract: SOT23 JEDEC standard MO-223A c 3421 transistor SOT23 JEDEC standard orientation pad size JEDEC 95 sot packages MO-193D 193d Amkor G600 SC sot23 Text: LEADFRAME data sheet SOT / SC Features: Thermal Resistance: Standard Outline Transistor SOT23 and Single Chip (SC70) Packages: Amkor’s 1.0 mm thick, 3, 5, 6, and 8 lead SOT23 and 5 and 6 lead SC70 packages offer gullwing lead, subminiature, SMT performance	Original	MO-193D. SOT23 JEDEC standard orientation SOT23 JEDEC standard MO-223A c 3421 transistor SOT23 JEDEC standard orientation pad size JEDEC 95 sot packages MO-193D 193d Amkor G600 SC sot23	PDF
BC848A Abstract: No abstract text available Text: BC846A-BC848C NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion   Complementary PNP Types: BC856 – BC858   For switching and AF Amplifier Applications Case: SOT23 Case material: molded plastic, “Green” molding compound	Original	BC846A-BC848C BC856 BC858 AEC-Q101 J-STD-020 MIL-STD-202, BC846A BC848C DS11108 BC848A	PDF
Untitled Abstract: No abstract text available Text: BC856A-BC858C PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion   Complementary NPN Types: BC846 – BC848   For switching and AF Amplifier Applications Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound	Original	BC856A-BC858C BC846 BC848 AEC-Q101 J-STD-020 MIL-STD-202, BC856A BC858C DS11207	PDF
FMMT458 Abstract: fmmt458ta 400V 100MA NPN SOT23 Text: A Product Line of Diodes Incorporated FMMT458 400V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > 400V • Case: SOT23 • IC = 225mA high Continuous Collector Current • UL Flammability Rating 94V-0 • ICM = 1A Peak Pulse Current	Original	FMMT458 225mA 500mW 100mA FMMT558 AEC-Q101 J-STD-020 MILSTD-202, DS33088 FMMT458 fmmt458ta 400V 100MA NPN SOT23	PDF
E2p 28 transistor Abstract: transistor DATA REFERENCE handbook RF TRANSISTOR 2.5 GHZ s parameter E2p device marking marking code 10 sot23 marking code ce SOT23 RF NPN POWER TRANSISTOR 2.5 GHZ BFS17A MSB003 Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package.	Original	BFS17A MSB003 E2p 28 transistor transistor DATA REFERENCE handbook RF TRANSISTOR 2.5 GHZ s parameter E2p device marking marking code 10 sot23 marking code ce SOT23 RF NPN POWER TRANSISTOR 2.5 GHZ BFS17A MSB003	PDF
BFT93 Abstract: BFR93 application note bfr93 GHz PNP transistor BFR93A MSB003 transistor BFR93 Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT93 PNP 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23	Original	BFT93 BFT93 BFR93 application note bfr93 GHz PNP transistor BFR93A MSB003 transistor BFR93	PDF
BFS17A Abstract: MSB003 Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September1995 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package.	Original	BFS17A September1995 MSB003 BFS17A MSB003	PDF
BFT25 Abstract: MSB003 MEA909 Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BFT25 PINNING NPN transistor in a plastic SOT23	Original	BFT25 MSB00ny BFT25 MSB003 MEA909	PDF
4 phase stepper motor Abstract: 12v transformer fx3311 FMMT618 ir remote control transmitter BCP54, BCX54 FMMT619 zetex product BCX54 LL5818 Text: Application Note 11 Issue 2 October 1995 Features and Applications of the FMMT618 and 619 High Current SOT23 replaces SOT89, SOT223 and D-PAK David Bradbury Switch 6A loads using a SOT23 transistor? Zetex has developed this new range to meet ever increasing demands for	Original	FMMT618 OT223 FMMT619 OT223 10-20mV 4 phase stepper motor 12v transformer fx3311 ir remote control transmitter BCP54, BCX54 zetex product BCX54 LL5818	PDF

TRANSISTOR SOT23 CR Search Results

TRANSISTOR SOT23 CR Result Highlights (5)

TRANSISTOR SOT23 CR Datasheets Context Search

Untitled

Untitled

K1 transistor

Untitled

STT817

MMBT5401

K1M 103

Untitled

BFS17A

k3b transistor

Untitled

K1p TRANSISTOR

ic 7495

k5c transistor

Untitled

SOT23 JEDEC standard orientation

BC848A

Untitled

FMMT458

E2p 28 transistor

BFT93

BFS17A

BFT25

4 phase stepper motor