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    TRANSISTOR SOT23 PF Search Results

    TRANSISTOR SOT23 PF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SOT23 PF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K1 transistor

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 50A Peak Avalanche Current Pulse width = 20ns BVCES > 150V • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound.


    Original     		FMMT413 J-STD-020 MILSTD-202, DS33083 K1 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 60A Peak Avalanche Current Pulse width = 20ns BVCES > 260V (415) & 320V (417) • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound


    Original     		FMMT415 FMMT417 AEC-Q101 J-STD-020 FMMT415-FMMT417 DS33084 PDF

    FMMT634

    Abstract: IC 1A datasheet darlington sot23 npn transistor Ic 1A datasheet transistor Ic 1A datasheet NPN FMMT734 DSA003701
    Text: “SuperSOT” SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR FMMT634 ISSUE 1 – APRIL 97 FEATURES * 625mW POWER DISSIPATION * Highest current capability SOT23 Darlington * Very high hFE - specified at 2A 5K minimum - typically 600 at 5A COMPLEMENTARY TYPE – FMMT734


    Original     		FMMT634 625mW FMMT734 100mA 100ms 100us FMMT634 IC 1A datasheet darlington sot23 npn transistor Ic 1A datasheet transistor Ic 1A datasheet NPN FMMT734 DSA003701 PDF

    FMMTA42

    Abstract: FMMTA92 FMMTA92R pnp 200v fmmt-a
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - MARCH 2001 FMMTA92 ✪ PARTMARKING DETAILS: – FMMTA92 - 4E – FMMTA92R - 8E E C B COMPLEMENTARY TYPES: – FMMTA92 - FMMTA42 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage


    Original     		FMMTA92 FMMTA92 FMMTA92R FMMTA42 -10mA, -30mA FMMTA42 pnp 200v fmmt-a PDF

    FMMTA20R

    Abstract: FMMTA20 FMMTA70 DSA003703 FMMTA20R-3C
    Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR FMMTA20 ISSUE 2 – MARCH 1995 PARTMARKING DETAIL – COMPLEMENTARY TYPE – FMMTA20 – 1C FMMTA20R – 3C E C FMMTA70 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage VCEO


    Original     		FMMTA20 FMMTA20R FMMTA70 100mA, 100MHz 140kHz, FMMTA20R FMMTA20 FMMTA70 DSA003703 FMMTA20R-3C PDF

    FMMT593

    Abstract: FMMT493
    Text: SOT23 NPN SILICON PIANAR MEDIUM FMMT493 POWER TRANSISTOR ISSUE 3- NOVEMBER COMPLEMENTARY PARTMARKING 1995 TYPE - E 1 1 493 I RATINGS. I SYMBOL ] PARAMETER Collector-Base ! FMMT593 DETAIL - ABSOLUTE MAXIMUM I SOT23 VALUE 1 UNIT Voltage Collector-Emitter Voltage


    Original     		FMMT493 FMMT593 TamW250C 100MHz 10IMA 10tnA 10JmA 100mA 10IIA FMMT593 FMMT493 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage APPLICATIONS


    Original     		BFS17A September1995 MSB003 R77/02/pp9 PDF

    ic 7495

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTP25060BFH 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • BVCEO > -60V Breakdown Voltage • Case: SOT23 • 100V forward blocking voltage • Case material: molded Plastic. “Green” molding Compound.


    Original     		ZXTP25060BFH -85mV ZXTN25060BFH AEC-Q101 DS33374 ic 7495 PDF

    FMMT458

    Abstract: FMMT558 ic tba 500 DSA003671
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 4 – APRIL 2002 FEATURES * 400 Volt VCEO E C COMPLEMENTARY TYPE – FMMT558 PARTMARKING DETAIL – 458 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO


    Original     		FMMT458 FMMT558 Vol75 100ms FMMT458 FMMT558 ic tba 500 DSA003671 PDF

    all ic data

    Abstract: 500ma 40v pnp all ic datasheet MV SOT23 PNP POWER TRANSISTOR SOT23 25 V 500mA TRANSISTOR SOT23 PARTMARKING at BC807 BC80716 BC80725
    Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC807 ISSUE 3 – MARCH 2001 PARTMARKING DETAILS BC80716 – 5AZ BC80725 – 5BZ BC80740 – 5CZ E C B COMPLEMENTARY TYPE BC817 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage


    Original     		BC807 BC80716 BC80725 BC80740 BC817 -500mA, -50mA* -100mA, all ic data 500ma 40v pnp all ic datasheet MV SOT23 PNP POWER TRANSISTOR SOT23 25 V 500mA TRANSISTOR SOT23 PARTMARKING at BC807 BC80716 BC80725 PDF

    FMMT2484

    Abstract: DSA003691 power ic 5v
    Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ISSUE 2 – MARCH 94 FEATURES * 60 Volt VCEO FMMT2484 ✪ E C PARTMARKING DETAIL – 4G B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage


    Original     		FMMT2484 140KHz 200Hz 15kHz FMMT2484 DSA003691 power ic 5v PDF

    transistor 6CZ

    Abstract: BC807 BC817 BC81716 BC81725 BC81740 6Bz transistor
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 5 – MARCH 2001 PARTMARKING DETAILS BC81716 – 6AZ BC81725 – 6BZ BC81740 – 6CZ ✪ COMPLEMENTARY TYPE – BC807 BC817 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage


    Original     		BC81716 BC81725 BC81740 BC817 BC807 500mA, 100mA, transistor 6CZ BC807 BC817 BC81716 BC81725 BC81740 6Bz transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFS17 NPN 1 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage APPLICATIONS


    Original     		BFS17 MSB003 R77/02/pp8 PDF

    BSOT-23

    Abstract: PNP POWER TRANSISTOR SOT23 FMMTA20 FMMTA70 DSA003704
    Text: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTOR FMMTA70 ISSUE 3 – FEBRUARY 1996 PARTMARKING DETAIL – FMMTA70 – 2CZ COMPLIMENTARY TYPE – FMMTA20 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage


    Original     		FMMTA70 FMMTA20 -10mA, 100MHz 100KHz BSOT-23 PNP POWER TRANSISTOR SOT23 FMMTA20 FMMTA70 DSA003704 PDF

    transistor c 3181

    Abstract: ML SOT23 TRANSISTOR 3182
    Text: SOT23 NPN SILICON PLANAR RF TRANSISTOR FMMTH10 ISSUE 2 - NOVEMBER 1995 FEATURES * High fT=650MHz * * M axim um capacitance 0.7pF Low noise < 5dB at 500MHz PARTMARKING D E T A IL- Ml 3E2 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Emitter Voltage


    OCR Scan     		650MHz 500MHz FMMTH10 100MHz 500MHz, 300ns. transistor c 3181 ML SOT23 TRANSISTOR 3182 PDF

    FMMT918

    Abstract: "vhf,uhf transistor" DSA003702
    Text: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTOR FMMT918 ISSUE 2 – JANUARY 1996 PARTMARKING DETAILS – 3B E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage


    Original     		FMMT918 100MHz 60MHz, 200MHz FMMT918 "vhf,uhf transistor" DSA003702 PDF

    BCW68GR

    Abstract: BCW68HR BCW68GR-5T BCW66 BCW68 BCW68F BCW68FR BCW68G BCW68H
    Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCW68 ISSUE 5 - MARCH 2001 PARTMARKING DETAILS – BCW68F – BCW68G – BCW68H – DF DG DH BCW68FR – BCW68GR – BCW68HR – 7T 5T 7N E C B COMPLEMENTARY TYPES – BCW66 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER


    Original     		BCW68 BCW68F BCW68G BCW68H BCW68FR BCW68GR BCW68HR BCW66 BCW68tance -10mA BCW68GR BCW68HR BCW68GR-5T BCW66 BCW68 BCW68F BCW68FR BCW68G BCW68H PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is


    Original     		BFR106 MSB003 R77/02/pp10 PDF

    BCW66FR

    Abstract: BCW66HR vce 1v BCW66 BCW66F BCW66G BCW66GR BCW66H BCW68
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - MARCH 2001 PARTMARKING DETAILS – BCW66F – EF BCW66G – EG BCW66H – EH BCW66FR – BCW66GR – BCW66HR – BCW66 7P 5T 7M E C B COMPLEMENTARY TYPE – BCW68 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER


    Original     		BCW66F BCW66G BCW66H BCW66FR BCW66GR BCW66HR BCW66 BCW68 100mA, BCW66FR BCW66HR vce 1v BCW66 BCW66F BCW66G BCW66GR BCW66H BCW68 PDF

    BFS20

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR VHF TRANSISTOR ISSUE 3 – JANUARY 1996 BFS20 ✪ PARTMARKING DETAIL — G1 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO


    Original     		BFS20 100MHz BFS20 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR SM ALL SIGNAL TRANSISTOR ISSUE 2 - MARCH 94 FMMT2484 Q FEATURES * 60 Volt V,CEO PARTMARKING DETAIL - 4G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V CBO 60 V V CEO 60 V Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		FMMT2484 VCEr45V, 100uA* 500uA, 140KHz 200Hz 15kHz 300us. PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT491 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data • BVCEO > 60V • • IC = 1A Continuous Collector Current • • ICM = 2A Peak Pulse Current Case: SOT23 Case Material: molded plastic, “Green” molding compound


    Original     		FMMT491 500mW FMMT591 AEC-Q101 DS33091 PDF

    BFR106

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is


    Original     		BFR106 BFR106 MSB003 R77/02/pp10 771-BFR106-T/R PDF

    marking P51 transistor

    Abstract: ZX5T751F 1A SOT23
    Text: ZX5T751F ADVANCED ISSUE SOT23 PNP SILICON 60V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > -80V V(BR)CEO > -60V Ic(cont) = -3.5A Rce(sat) = 40 m typical Vce(sat) < -80 mV @ -1A SOT23 DESCRIPTION FEATURES • • • •


    Original     		ZX5T751F ZX5T751FTA marking P51 transistor ZX5T751F 1A SOT23 PDF