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    TRANSISTOR SPEC LIST Search Results

    TRANSISTOR SPEC LIST Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SPEC LIST Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ISO-2859-1

    Abstract: PT202MR0MP1 EIAJ C-3
    Text: SPEC. No. SH AR P ISSUE DG036004A Oct/28/03 CONPOUND SEMICONDUCTOR DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION TECHNICAL LITERATURE DEVICE TECHNICAL LITERATURE FOR Photo Transistor MODEL No. PT202MR0MP1 * The technical literature is subject to be changed without notice *


    OCR Scan     		DG036004A Oct/28/03 PT202MR0MP1 DG036004A 40kHz, ISO-2859-1 PT202MR0MP1 EIAJ C-3 PDF

    TL817

    Abstract: TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945
    Text: PTFB241402F Customer-Specific Spec — Not for General Release High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in


    Original     		PTFB241402F PTFB241402F H-37248-4 TL817 TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945 PDF

    CSG3001-18A04

    Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
    Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power


    Original     		400F415 460F460 500F500 630F415 730F460 800F500 570F575 630F660 870F575 1000F660 CSG3001-18A04 thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04 PDF

    capacitor 4700uF

    Abstract: EI-57 transformer capacitor 4700uf 16v Transformer EI-57 CA723 DTR050100-P1 EI-57 TIP41A thermal fuse 115 0202I
    Text: CUI IN C SPEC NO: 035-0058 PART NO: DTR050100-P1 UNIT: mm PAGE NO: 1 o f 3 DATE: 10/02/02 All information contained herein applies only to the above listed part number. Other versions of this part number with electrical or mechanical variations are available. Contact CUI Inc. for further assistance. 9615 SW Alien Blvd., Ste. 103, Beaverton OR 97005


    OCR Scan     		DTR050100-P1 120VAC, 160mA 420-SEO 18mmx2PCS 025mmxl 25mmxlPC 025mmx2 capacitor 4700uF EI-57 transformer capacitor 4700uf 16v Transformer EI-57 CA723 DTR050100-P1 EI-57 TIP41A thermal fuse 115 0202I PDF

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


    OCR Scan     		PDF

    74HC123 watchdog

    Abstract: application circuits of ic 74HC123 74HC123 PC319 PC358 PC393 PC4558 PC842 transistor marking CS Gyro Motor
    Text: Introduction Analog Master , semi-custom IC which realizes one chip solution of analog circuits. Analog Master is a semi-custom LSI for creating analog circuits on a master wafer by interconnecting pre-diffused elements bipolar transistors, resistors, and capacitors already


    Original     		PDF

    DB3-K079

    Abstract: No abstract text available
    Text: SPEC IFICA TIO N Voltage regulator with on/off TK 715xxSCL Output Voltage Voltage Code Output Voltage xx Part : Correspondence list Output Voltage Voltage Code Voltage Code Output Voltage Voltage Code 1.9 V 19 2.0 V 20 3.0 V 30 4.0 V 40 2.1 V 21 3.1 V 31 4.1 V


    OCR Scan     		TK715xxSCL DB3-K079 TK715xx DB3-K079 PDF

    E41R

    Abstract: M68000 M68300 MC68341 QEAQ9412 XC68341FT16 circuit of pit and interrupt AS68K rmc capacitor
    Text: Chip Errata 68341 Integrated Processor 3/28/96 Copyright C 1996, Motorola Contents of this document are intended only for the internal use of Motorola customers designing with this product. This errata list applies to the following 68341 mask sets: Mask


    Original     		XC68341FT16 QEAQ9412 SIM40 M68000 AS68K. E41R M68300 MC68341 QEAQ9412 XC68341FT16 circuit of pit and interrupt AS68K rmc capacitor PDF

    PN5179

    Abstract: CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N TRANSISTOR C 3223 MJC2
    Text: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency


    Original     		PN5179 MMBT5179 OT-23 PN5179 CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N TRANSISTOR C 3223 MJC2 PDF

    pMOS transistor

    Abstract: X311 XAPP311 PMOS driver coolrunner PCI Signal Path designer
    Text: Please use this Application Note in reference to the CoolRunner XPLA3 family only. Refer to www.xilinx.com/partinfo/notify/pdn0007.htm for details. Application Note: CoolRunner® CPLDs R 5 Volt Tolerant and PCI XAPP311 v1.2 October 9, 2000 Summary The purpose of this application note is to investigate the PCI (Peripheral Component Interface)


    Original     		com/partinfo/notify/pdn0007 XAPP311 pMOS transistor X311 XAPP311 PMOS driver coolrunner PCI Signal Path designer PDF

    X311

    Abstract: pMOS transistor XAPP311 Signal Path designer
    Text: Application Note: CoolRunner CPLDs R 5 Volt Tolerant and PCI XAPP311 v1.1 February 14, 2000 Summary The purpose of this application note is to investigate the PCI (Peripheral Component Interface) environment when using 5V tolerant, 3.3V supply integrated circuits. In particular, we will


    Original     		XAPP311 X311 pMOS transistor XAPP311 Signal Path designer PDF

    Untitled

    Abstract: No abstract text available
    Text: VPDQ1 DIE P-Channel Enhancement-Mode MOS Transistor in c o r p o r a te d VPDQ1CHP* BSS92 TP2020L TP1220L VP2020L 0.038 ‘ Meets or exceeds specification for all part numbers listed below For additional design information please consult the 0. 965 ( 0 .254)


    OCR Scan     		BSS92 TP2020L TP1220L VP2020L VPDQ20. PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 HFA3127/883 February 1995 Ultra High Frequency Transistor Array Features Description • This Circuit is Processed In Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HFA3127/883 is an Ultra High Frequency Transistor


    OCR Scan     		HFA3127/883 MIL-STD883 HFA3127/883 PDF

    HARRIS SEMICONDUCTOR APPLICATION NOTES

    Abstract: SMD TRANSISTORS AAA GDIP1-T16 HFA3127 harris 8 lead cerdip DIMENSIONS
    Text: HFA3127/883 S E M I C O N D U C T O R Ultra High Frequency Transistor Array February 1995 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HFA3127/883 is an Ultra High Frequency Transistor


    Original     		HFA3127/883 MIL-STD883 HFA3127/883 1-800-4-HARRIS HARRIS SEMICONDUCTOR APPLICATION NOTES SMD TRANSISTORS AAA GDIP1-T16 HFA3127 harris 8 lead cerdip DIMENSIONS PDF

    2N7051

    Abstract: 2N7053 CBVK741B019 F63TNR NZT7053 PN2222N S4-70 2N705
    Text: 2N7053 NZT7053 C E C B TO-92 E C C B TO-226 B SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings*


    Original     		2N7053 NZT7053 O-226 OT-223 2N7051 2N7053 CBVK741B019 F63TNR NZT7053 PN2222N S4-70 2N705 PDF

    2N7051

    Abstract: 2N7053 CBVK741B019 F63TNR NZT7053 PN2222N
    Text: 2N7053 NZT7053 C E C B TO-92 E C C B TO-226 B SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings*


    Original     		2N7053 NZT7053 O-226 OT-223 2N7051 2N7053 CBVK741B019 F63TNR NZT7053 PN2222N PDF

    Untitled

    Abstract: No abstract text available
    Text: FS8855-DS-26_EN JAN 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 2.6 Datasheet FS8855 500 mA LDO Linear Regulator FS8855 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司


    Original     		FS8855-DS-26 FS8855 500mAï 700mV 850mV PDF

    atmel 344

    Abstract: ATL60
    Text: ATL60 Cell-3.4-4/98 ATL60/ATLS60 0.6µ Cell Library How to Use This Cell Library . 7-2 Gate Count Estimation. 7-2


    Original     		ATL60 ATL60/ATLS60 380mA 108mA 200mA -12mA -48mA) -36mA -144mA atmel 344 PDF

    SAMSUNG VFD

    Abstract: Samsung Tantalum Capacitor IN5819 diode IRF9540 application Buck Circuit S3F84A5 VLF12060 S3F84P4 IN5819 VISHAY BD1 VFD module
    Text: APPLICATION NOTE S3F84A5 An LED Lighting System January 2010 Revision 0.00 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2010 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully


    Original     		S3F84A5 S3F84P4 100uF WSR21R000FEA IRF9540 IN5819 VLF12060-101M1R0 SAMSUNG VFD Samsung Tantalum Capacitor IN5819 diode IRF9540 application Buck Circuit S3F84A5 VLF12060 IN5819 VISHAY BD1 VFD module PDF

    harris 8 lead cerdip DIMENSIONS

    Abstract: No abstract text available
    Text: HFA3127/883 HARRIS S E M I C O N D U C T O R Ultra High Frequency Transistor Array February 1995 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HFA3127/883 is an Ultra High Frequency Transistor


    OCR Scan     		HFA3127/883 HFA3127/883 1-800-4-HARRIS harris 8 lead cerdip DIMENSIONS PDF

    2N5306

    Abstract: F63TNR MPSA14 PN2222N CBVK741B019
    Text: 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		2N5306 MPSA14 2N5306 F63TNR PN2222N CBVK741B019 PDF

    k 3683 transistor

    Abstract: BCxxx TRANSISTOR PN2222N 2N6076 CBVK741B019 F63TNR small signal transistor transistor k 3683 transistor k 0247
    Text: DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 25 V Min 1 2 3 hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA B C E 2 0.135 - 0.145 (3.429 - 3.683) 3 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1)


    Original     		2N6076 k 3683 transistor BCxxx TRANSISTOR PN2222N 2N6076 CBVK741B019 F63TNR small signal transistor transistor k 3683 transistor k 0247 PDF

    2N5308

    Abstract: PN2222N TO5 package D9842 F63TNR MPSA14 CBVK741B019 PN222N D74z transistor k 0247
    Text: 2N5308 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		2N5308 MPSA14 2N5308 PN2222N TO5 package D9842 F63TNR CBVK741B019 PN222N D74z transistor k 0247 PDF

    2N3663

    Abstract: CBVK741B019 F63TNR PN2222N PN918
    Text: 2N3663 2N3663 B TO-92 CE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings*


    Original     		2N3663 PN918 2N3663 CBVK741B019 F63TNR PN2222N PDF