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    TRANSISTOR SS8050 Search Results

    TRANSISTOR SS8050 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SS8050 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TRANSISTORS BJT bc548

    Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
    Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002


    Original     		OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SS8550 TRANSISTOR PNP SOT–323 FEATURES  High Collector Current  Complementary to SS8050 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		OT-323 SS8550 SS8050 -100mA -800mA -800mA, -80mA -10mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8550 TRANSISTOR PNP SOT–23 FEATURES  High Collector Current  Complementary to SS8050 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		OT-23 SS8550 SS8050 VCE-10V PDF

    ss8050 sot-323

    Abstract: ss8550 Y2 TRANSISTOR SS8050 ss8550 transistor SS8550 SS8050 Y2
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors SS8550 SOT-323 TRANSISTOR PNP FEATURES Complimentary to SS8050 1. Base 2. Emitter 3. Collector MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


    Original     		OT-323 SS8550 OT-323 SS8050 ss8050 sot-323 ss8550 Y2 TRANSISTOR SS8050 ss8550 transistor SS8550 SS8050 Y2 PDF

    ss8050 sot-323

    Abstract: SS8050 Y1 ss8050 TRANSISTOR SS8050 SS8050 equivalent ss8550
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SS8050 TRANSISTOR NPN SOT-323 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER MARKING: Y1 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


    Original     		OT-323 SS8050 OT-323 SS8550 ss8050 sot-323 SS8050 Y1 ss8050 TRANSISTOR SS8050 SS8050 equivalent ss8550 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SS8050 TRANSISTOR NPN SOT-323 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER MARKING: Y1 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol


    Original     		OT-323 SS8050 OT-323 SS8550 PDF

    ss8050 sot-23

    Abstract: SS8050 sot-23 Y1 ss8550 sot-23 SS8050 Y1 SOT-23 SS8050 Y1 SS8050 equivalent SS8050 sot-23 equivalent ss8550 Y1 marking transistor sot23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		OT-23 SS8050 OT-23 SS8550 ss8050 sot-23 SS8050 sot-23 Y1 ss8550 sot-23 SS8050 Y1 SOT-23 SS8050 Y1 SS8050 equivalent SS8050 sot-23 equivalent ss8550 Y1 marking transistor sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		OT-23 SS8050 OT-23 SS8550 100mA 800mA 800mA, 30MHz PDF

    SS8050 sot-23 Y1

    Abstract: Y1 SOT-23 SS8050 Y1 ss8050 sot-23 SS8050 marking y1 sot-23 ss8050 equivalent marking Y1 transistor y1 SOT23 transistor marking y1
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES SS8050 Pb z Collector Current. IC= 1.5A） z Complementary To SS8550. z Collector dissipation:PC=300mW(TC=25℃ Lead-free APPLICATIONS z High Collector Current. SOT-23


    Original     		SS8050 SS8550. 300mW OT-23 BL/SSSTC086 SS8050 sot-23 Y1 Y1 SOT-23 SS8050 Y1 ss8050 sot-23 SS8050 marking y1 sot-23 ss8050 equivalent marking Y1 transistor y1 SOT23 transistor marking y1 PDF

    transistor marking y1

    Abstract: marking Y1 transistor SS8050W SS8550W y1 marking code transistor sot-323 transistor marking code 15
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES SS8050W Pb z Collector Current. IC= 1.5A） z Complementary To SS8550W. z Collector dissipation:PC=200mW(TC=25℃ Lead-free APPLICATIONS z High Collector Current. SOT-323


    Original     		SS8050W SS8550W. 200mW OT-323 15icon BL/SSSTF061 transistor marking y1 marking Y1 transistor SS8050W SS8550W y1 marking code transistor sot-323 transistor marking code 15 PDF

    SS8550 sot-23 Y2

    Abstract: ss8550 sot-23 transistor ss8050 sot23 transistor marking y2 ss8050 sot-23 MARKING Y2 SS8050 SS8050 equivalent SS8050 sot-23 equivalent transistor SS8550
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8550 SOT-23 TRANSISTOR PNP FEATURES Complimentary to SS8050 1. Base 2.Emitter 3.Collector MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		OT-23 SS8550 OT-23 SS8050 SS8550 sot-23 Y2 ss8550 sot-23 transistor ss8050 sot23 transistor marking y2 ss8050 sot-23 MARKING Y2 SS8050 SS8050 equivalent SS8050 sot-23 equivalent transistor SS8550 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8550 SOT-23 TRANSISTOR PNP FEATURES Complimentary to SS8050 1. Base 2.Emitter 3.Collector MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		OT-23 SS8550 OT-23 SS8050 -100mA -800mA -800mA, -80mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		OT-23 SS8050 OT-23 SS8550 100mA 800mA 800mA, 30MHz PDF

    ss8550

    Abstract: MPSL01 2N5401 MPSL51 SS8050 SS9011 transistor D 667 C TRANSISTOR 2n5401
    Text: j S A M S U N G S E M I C O N D U C T O R INC MPSL01 14E D | 7 ^ 1 4 3 00073*10 â J 'T 'í '9 - X i NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emltt«rWiltafl«: Vdo=120V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		MPSL01 625mW Ic-100/Ã ss8550 2N5401 MPSL51 SS8050 SS9011 transistor D 667 C TRANSISTOR 2n5401 PDF

    ss8550 sot-23

    Abstract: SS8550 sot-23 Y2 sot23 transistor marking y2 SS8050 Y2 marking Y2 ss8550 ss8050 sot-23 transistor marking y2 SS8050 sot-23 Y2 ss8550 TRANSISTOR
    Text: SS8550 SOT-23 Transistor PNP SOT-23 1. Base 2.Emitter 3.Collector Features Complimentary to SS8050 MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Dimensions in inches and (millimeters) Parameter Value Units VCBO Collector-Base Voltage


    Original     		OT-23 SS8550 OT-23 SS8050 -100A, -100mA -800mA -800mA, -80mA ss8550 sot-23 SS8550 sot-23 Y2 sot23 transistor marking y2 SS8050 Y2 marking Y2 ss8550 ss8050 sot-23 transistor marking y2 SS8050 sot-23 Y2 ss8550 TRANSISTOR PDF

    ss8050 sot-23

    Abstract: SS8050 sot-23 Y1 Y1 SOT-23 SS8050 Y1 ss8050 Y1 TRANSISTOR MARKING SOT23 5 marking y1 sot-23 transistor marking y1 ss8550 sot-23 y1 sot23
    Text: SS8050 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to SS8550 MARKING: Y1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		OT-23 SS8050 OT-23 SS8550 800mA 800mA, 30MHz 100mA ss8050 sot-23 SS8050 sot-23 Y1 Y1 SOT-23 SS8050 Y1 ss8050 Y1 TRANSISTOR MARKING SOT23 5 marking y1 sot-23 transistor marking y1 ss8550 sot-23 y1 sot23 PDF

    SS8050LT

    Abstract: 8050LT1
    Text: DONGGUAN FORWARD SEMICONDUCTOR CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR NPN FEATURES Power dissipation PCM: W(Tamb=25℃) 0.3 Collector current ICM: 1.5 A 40 V Collector-base voltage V(BR)CBO: Operating and storage junction temperature range


    Original     		OT-23 SS8050LT1 100mA 800mA 30MHZ 8050LT1 SS8050LT PDF

    SS8050

    Abstract: 2ss8050 MARKING Y1 TRANSISTOR transistor marking y1 SS8050 sot-23 Y1 ss8050 sot-23 SS8050 Y1 ss8050 Y1 SOT-23 ss8050 equivalent transistor y1
    Text: SS8050 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES      A L Complimentary to SS8550 Power Dissipation PCM : 0.3W Collector Current


    Original     		SS8050 OT-23 SS8550 100mA 800mA 800mA, 30MHz 26-Oct-2009 SS8050 2ss8050 MARKING Y1 TRANSISTOR transistor marking y1 SS8050 sot-23 Y1 ss8050 sot-23 SS8050 Y1 ss8050 Y1 SOT-23 ss8050 equivalent transistor y1 PDF

    marking y1 sot-23

    Abstract: SS8550LT1 Y1 SS8050LT1 amplifier 800mA
    Text: SS8050LT1 SEMICONDUCTOR TECHNICAL DATA 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to SS8550LT1 * Collector Current :Ic= 800mA * High Total Power Dissipation :Pc=625mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃ NPN EPITAXIAL SILICON TRANSISTOR


    Original     		SS8050LT1 SS8550LT1 800mA 625mW OT-23 100mA 800mA 30MHz marking y1 sot-23 SS8550LT1 Y1 SS8050LT1 amplifier 800mA PDF

    SS8050W

    Abstract: marking Y1 marking Y1 transistor transistor marking y1
    Text: SS8050W NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product FEATURES SOT-323 Collector 3 3 Power dissipation 2 A 1.800 2.200 1.150 1.350 Base C 0.800 1.000 2 Emitter L 3 B S Top View Operating & storage junction temperature


    Original     		SS8050W OT-323 500mA 30MHz 01-Jun-2002 SS8050W marking Y1 marking Y1 transistor transistor marking y1 PDF

    transistor TO-92 SS8050

    Abstract: No abstract text available
    Text: SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. TO-92 • Complimentary to SS8550 • Collector Current: IC=1.5A • Collector Dissipation: PC=2W TC=25°C ABSOLUTE MAXIMUM RATINGS (TA=25°°C)


    Original     		SS8050 SS8550 transistor TO-92 SS8050 PDF

    Untitled

    Abstract: No abstract text available
    Text: SS8550 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. TO-92 • Complimentary to SS8050 • Collector Current: lc= -1.5A • Collector Dissipation: PC=2W Tc=25°C ABSOLUTE MAXIMUM RATINGS (TA=25°C)


    OCR Scan     		SS8550 SS8050 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 SS8050 TRANSISTOR NPN 1. EMITTER FEATURES Power Dissipation PCM : 1 W (TA=25.) : 2 W (TC=25.) 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		SS8050 100mA 800mA 800mA, 30MHZ PDF

    transistor TO-92 SS8050

    Abstract: No abstract text available
    Text: SS8550 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. TO-92 • Complimentary to SS8050 • Collector Current: IC= -1.5A • Collector Dissipation: PC=2W TC=25°C ABSOLUTE MAXIMUM RATINGS (TA=25°°C)


    Original     		SS8550 SS8050 transistor TO-92 SS8050 PDF