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    TRANSISTOR ST 431 Search Results

    TRANSISTOR ST 431 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ST 431 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    str 5707

    Abstract: 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = (any letter) Revision, see detail specification F = Active pull-down device (BiMOS only) -1 = Selected version, see detail specification


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    PDF MS-001, MS-010, MS-011) MS-010) MS-018) str 5707 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


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    PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    dinverter 768r

    Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


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    PDF HEF4527BT HEF4531BT HEF4534BP HEF4534BT MSP-STK430X320 AD9054/PCB AD9054BST-135 IPS521G IPS521S IRL2203S dinverter 768r G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601

    2SD 4206

    Abstract: str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)


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    PDF MS-001, MS-010, MS-011) MS-010) MS-018) AMS-127B 2SD 4206 str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC

    TRANSISTOR SMD 613

    Abstract: TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)


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    PDF MS-001, MS-010, MS-011) MS-010) MS-018) AMS-127B TRANSISTOR SMD 613 TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor

    Ericsson Installation guide for RBS 6000

    Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


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    PDF 304X264X130 CL200 TC554001FI-85L TC554001FTL-70 BMSKTOPAS900 BMSKTOPAS870 10/100TX 13X76 35X100 19X89 Ericsson Installation guide for RBS 6000 ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC

    FX3G-24M

    Abstract: FX3G-14M mitsubishi plc FX3g 40m communication FX3G24M FX3G-40M mitsubishi MODBUS RTU mitsubishi plc FX3g 60m communication mitsubishi plc FX3g FX3G24M CAD FX3G-60M
    Text: Specifications /// MITSUBISHI ELECTRIC Product Information EBG 196-EN Specifications FX3G-14M„ FX3G-24M„ I/O points Max. 128 direct addressing and max. 128 remote I/O Power supply FX3G 100–240 V AC +10 % / -15 % , 50/60 Hz Program memory 32,000 steps EEPROM (internal), exchangeable EEPROM memory cassette with loader function


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    PDF 196-EN FX3G-14M FX3G-24M IL-49001 IL-42160 ZA-1600 D-40880 24743-A FX3G-24M FX3G-14M mitsubishi plc FX3g 40m communication FX3G24M FX3G-40M mitsubishi MODBUS RTU mitsubishi plc FX3g 60m communication mitsubishi plc FX3g FX3G24M CAD FX3G-60M

    B81121 X2 mkt

    Abstract: B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2
    Text: Version 1.1 , March 2001 Application Note AN-TDA16888-0-010323 TDA 16888: Multioutput Single Transistor Forward Converter 150W / 100kHz Author: Michael Herfurth Published by Infineon Technologies AG http://www.infineon.com Power Management & Supply N e v e r


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    PDF AN-TDA16888-0-010323 100kHz V/18A; -12V/1A; V/100mA Room14J1 Room1101 B81121 X2 mkt B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


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    PDF DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E

    358 SMD transistor

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.


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    PDF BLT80 BLT80 OT223 MAM043 cir2724825 SCDS48 127061/1200/02/pp12 771-BLT80-T/R 358 SMD transistor

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.


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    PDF BLT80 OT223 OT223 MAM043 SCDS48 127061/1200/02/pp12

    4894

    Abstract: SMD ic catalogue BLT80 KM10 4312 020 36640
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.


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    PDF BLT80 OT223 OT223 MAM043 SCDS48 127061/1200/02/pp12 4894 SMD ic catalogue BLT80 KM10 4312 020 36640

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BLT81 UHF power transistor Product specification Supersedes data of November 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.


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    PDF BLT81 OT223 OT223 MAM043 SCDS48 127061/1200/02/pp12

    bje 133 resistor

    Abstract: No abstract text available
    Text: bbSB'lBl D D S T ^ M ST? • APX Philips Semiconductors Productspecifjcatj^ VHF power MOS transistor — ^ BLF244 i FEATURES N AMER PHILIPS/] ISCRETE b*]E B PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability


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    PDF BLF244 bje 133 resistor

    BLV80-28

    Abstract: cef 473 10J2 Ceramic Capacitors 2222 372 philips
    Text: bTE D N AMER PHILIPS/DISCRETE • bbS3R31 DOETIGI ^54 I IAPX I BLV 80/28 V.H.F. POWER TRANSISTOR N-P-N silico n planar epitaxial tra n sisto r p rim a rily intended fo r use in base stations in th e v.h .f. m ob ile radio band. Features: • • m ulti-base s tructu re and diffuse d e m itte r ballasting resistors fo r an o p tim u m te m perature p ro file ;


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    PDF bbS3R31 BLV80/28 OT-121 G02TltH BLV80-28 cef 473 10J2 Ceramic Capacitors 2222 372 philips

    MRA253

    Abstract: BLF522 MRA24S P101 saia
    Text: Philip^emiconducto^ H ^ 53^ 31 OOBOOT? 3flb H A P X Pr<KiuctsPecification UHF power MOS transistor ^ BLF522 ^ FEATURES N AMER PHILIPS/DISCRETE b'lE T> PIN CONFIGURATION • High power gain • Easy power control r- o • Gold metallization • Good thermal stability


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    PDF BLF522 OT171 PINNING-SOT171 MBB072 MBA931 MBA379 URA24S MRA253 BLF522 MRA24S P101 saia

    BLF544B

    Abstract: 74649
    Text: Product specification Philips Sem iconductors bb£3^31i 0030137 0^2 M A P X UHF push-pull power MOS transistor N AMER PHILIPS/DISCRETE BLF544B b*îE D- PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures


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    PDF BLF544B OT268 OT268 MCAS05 BLF544B 74649

    Untitled

    Abstract: No abstract text available
    Text: flP3Sb05 o o a i s b 2 m a • ■ SIEMENS PROFET BTS 542 E2 Smart Highside Power Switch Features Product Summary • • • • • • • • Overvoltage protection Vbb AZ Operating voltage On-state resistance Load current (ISO) Vbb(on) /L(ISO) 18 m n


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    PDF flP3Sb05 6235bG5 O-218AB/5 Q67060-S6951-A2

    BLX13

    Abstract: BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971
    Text: II PHI L IP S I N T E R N A T I O N A L MAINTENANCE TYPE MIE B J> 7110flSb O D E 7 7 C H 2 D P H I N II BLX13 H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and AB and in f.m. transmitting appli­ cations in class-C with a supply voltage up to 28 V. The transistor is resistance stabilized and tested


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    PDF 711005t. BLX13 r-33-// BLX13 BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971

    BLV45/12

    Abstract: sot119 blv45-12
    Text: N AMER PHILIPS/DISCRETE b'ìE D • ^53^31 □DScîGH2 STb I IAPX BLV45/12 V.H.F. POWER TRANSISTOR N-P-N silicon planar e p ita xia l tran sisto r p rim a rily intended fo r use in m ob ile rad io tra n sm itte rs in th e 175 MHz co m m u n ica tio n s band.


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    PDF BLV45/12 OT-119) BLV45/12 sot119 blv45-12

    transistor tt 2222

    Abstract: BLY93A TT 2222 ic TT 2222 TT 2222 npn T-33-73 LY93A ROTA E Series IEC134 SOT-56
    Text: PHILIPS INTERNATIONAL MIE D B 711üaEb ÜQ2flQ0ci 1 B P H I N A J L B LLY93 Y93A M A IN T EN A N C E TYPE T~33~/3 V.H.F. POWER TRANSISTOR '\ N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industriar and military transmitters with a supply voltage of 28 V, The transistor is resistance stabilized. Every tran­


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    PDF LY93A BLY93A transistor tt 2222 BLY93A TT 2222 ic TT 2222 TT 2222 npn T-33-73 LY93A ROTA E Series IEC134 SOT-56

    transistor tt 2222

    Abstract: transistor L6 TT 2222 npn BLY89C IEC134 transistor K 1096 33F2
    Text: N AMER P H I L I P S / D I S C R E T E bTE D • bbSS'ISl D O S A G E A 2 flfc> W A P X BLY89C V.H.F. POWER TRANSISTOR N-P-N s ilic o n planar e p ita xia l tra n sisto r intended fo r use in class-A, B and C operated m obile, in d u stria l and m ilita ry tra n sm itte rs w ith a n om inal su p p ly voltage o f 13,5 V . T he tra n sisto r is resistance stabilized


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    PDF BLY89C transistor tt 2222 transistor L6 TT 2222 npn BLY89C IEC134 transistor K 1096 33F2

    BTS 433

    Abstract: fet wn 428 TRANSISTOR K 135 J 50 1S70 1S71 BTS 430 E2
    Text: • ñ23Sb05 D0fllSb2 4 Tfl SIEMENS PROFET BTS 542 E2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • Overload protection • Current limitation • Short-circuit protection


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    PDF fl235b05 O-218AB/5 E3Sb05 Q67060-S6951-A2 BTS 433 fet wn 428 TRANSISTOR K 135 J 50 1S70 1S71 BTS 430 E2

    t07 transistor smd

    Abstract: smd transistor 2T6 SMD Transistor t07
    Text: • flE35b05 00fll430 T07 ■ SIEMENS PROFET BTS410E2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • • • • • • • • • • • •


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    PDF flE35b05 00fll430 BTS410E2 fl23Sb05 O-220AB/5 410E2 O-22QAB/5, E3043 Q67060-S6102-A2 410E2 t07 transistor smd smd transistor 2T6 SMD Transistor t07