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    TRANSISTOR T 270 Search Results

    TRANSISTOR T 270 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR T 270 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    transistor NEC D 586

    Abstract: nec a 634 NEC D 586 2SC3587 NEC K 2500 NEC 3500
    Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise am plification at 0.5 to 6.0 GHz. T his transistor has low-noise


    OCR Scan     		PDF 2SC3587 2SC3587 transistor NEC D 586 nec a 634 NEC D 586 NEC K 2500 NEC 3500

    vp 3082

    Abstract: TDA3081 TDA3082 tda 3081 TDA 1030 SIGNETICS tda 266 55812G transistor ITT CA 3082
    Text: Sign etics Interface-Transistor Arrays T D A 3081/3082 Seven Transistor Arrays C O N N E C T IO N D IA G R A M G E N E R A L D E SC R IPTIO N The T D A 3081 and T D A 308 2 are m o n o lith ic integrated c irc u its each consisting o f seven separate n-p-n transistor«,


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    BUK657-450B

    Abstract: T0220AB
    Text: N AMER PHILIPS/DISCRETE SSE D • 1^53=131 002070S t> PowerMOS transistor Fast Recovery Diode FET m BUK657-450B T -S T -IS GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery


    OCR Scan     		PDF BUK657-450B BUK657-450B T0220AB

    Y parameters of transistors at41533

    Abstract: No abstract text available
    Text: What HEWLETT* m iltm PACKARD General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data A T -4 1 5 1 1 A T -4 1 5 3 3 F e a tu re s • General Purpose NPN Bipolar Transistor • 900 MHz Performance: A T -41511: 1 dBNF, 15.5 dBGA A T -41533: 1 dBNF, 14.5 dBGA


    OCR Scan     		PDF OT-23 OT-143 sAT-41511 AT-41533 OT-23, AT-415 OT-143. Y parameters of transistors at41533

    1902 transistor

    Abstract: 2902 TRANSISTOR BUZZER DRIVER transistor sit FMU1 FMU-1
    Text: Tr 2SE ROHM CORP » T flS Ö T n OOGE^m Transistors#,*- T-Sl-Wo • Transistor Unit Composite Transistor • For Emitter Followers Resistance value Ri R2 Ra (kfi) (Mi) (Ml) 47 47 1.5 Type FMU1 Dimensions (Unit: mm), Vcc (V) Pd (mW) 15 200 Equivalent Integrated Circuits


    OCR Scan     		PDF RU101K 1902 transistor 2902 TRANSISTOR BUZZER DRIVER transistor sit FMU1 FMU-1

    2SA812

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SA812 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAG E DIMENSIONS * C om plem en ta ry to 2SC1623 in m illim e t e r s * H igh D C Cu rren t Gain: * H igh Voltage: V ceo hFE - 200 T YP.


    OCR Scan     		PDF 2SA812 2SC1623 IEI-1209) 2SA812

    C945C

    Abstract: No abstract text available
    Text: What H E W L E T T * mLliM PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high


    OCR Scan     		PDF AT-32063 OT-363 SC-70) AT-32063 OT-363 C945C

    BUK657-500C

    Abstract: No abstract text available
    Text: bbS3T31 0030710 T • 5SE D N AUER PHILIPS/DISCRETE PowerMOS transistor Fast Recovery Diode FET BUK657-500A BUK657-500B BUK657-500C T -3 < M 3 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.


    OCR Scan     		PDF bbS3T31 BUK657-500A BUK657-500B BUK657-500C BUK657 -500A 9/76m BUK657-500C

    Transistor 5331

    Abstract: BUK657-450B T0220AB Trt-100 transistor ZA 16
    Text: N AMER PH ILI PS/D IS CR ET E SSE D • 1^53=131 002070S t> PowerMOS transistor Fast Recovery Diode FET m BUK657-450B T -S T -IS GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery


    OCR Scan     		PDF Q02070S BUK657-450B Transistor 5331 T0220AB Trt-100 transistor ZA 16

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b^E b b 5 3 T 3 i o p a a T m sqs BLV11 ]> V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is


    OCR Scan     		PDF BLV11

    2N6519

    Abstract: 2N6520
    Text: SAMSUNG S EM IC O N D U C T OR INC 2N6519 14E D | 711,4142 0007111 7 | PNP EPITAXIAL SILICO N TRANSISTOR T-29-21 HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta-25°C Characteristic Collector-Base Voltage Collector-Emltter Voltage Emitter-Base Voltage


    OCR Scan     		PDF 2N6519 Ta-25Â 2N6520 T-29-21 100fiA, -20mA, -10mA, -30mA, 100mA

    2SD1312

    Abstract: w18 transistor
    Text: SEC j m ^ iv r x Silicon Transistor A 2SD1312 N PN X U =1 > b =7 > i> 7*9 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier mm / P A C K A G E # * / FEATURES DIMENSIONS Unit : mm O ¿T — T ' -i 7Ì" 7 > 7 i^<7) K -7 j o / J ^ T 'P t o è <, B i t HE T- r o


    OCR Scan     		PDF 2SD1312 SB984Â PWS10 cycleg50 io--00 2SD1312 w18 transistor

    BUK426-50A

    Abstract: BUK426-50B JYp sot
    Text: N AMER P H I L I P S / D I S C R E T E t. 3 5 3 ^ 3 1 ESE D QQE0 2 4 0 T BUK426-50A BUK426-50B PowerMOS transistor r ~ 3*7-1/ QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.


    OCR Scan     		PDF 0G202M0 BUK426-50A BUK426-50B BUK426 BUK426-50B JYp sot

    TRANSISTOR A3

    Abstract: transistor c 3274 BLW60 transistor c 1974 transistor wz blw60 philips carbon film resistor capacitor polyester philips trimmer 3-30 pf TRIMMER capacitor 5-60 pF trimmer PT 10
    Text: -— . L I_ N AMER PHILIPS/DISCRETE ObE D 86D 0 1 4 7 0 D bbS3=î31 00137Ga T • T~ 3 /f BLW60 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial


    OCR Scan     		PDF bbS3T31 BLW60 TRANSISTOR A3 transistor c 3274 BLW60 transistor c 1974 transistor wz blw60 philips carbon film resistor capacitor polyester philips trimmer 3-30 pf TRIMMER capacitor 5-60 pF trimmer PT 10

    BF324

    Abstract: BF324 philips transistor BF324
    Text: BF324 r -ILips i n t e r n a t i o n a l SbE » 711G ö2b DO MElMb 2ÖS • P H I N T"3l-{7 H,F. SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic envelope especially intended for r.f. stages in f.m. front-ends in common base configuration.


    OCR Scan     		PDF BF324 BF324 philips transistor BF324

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 5SE D • bbSHTBl 002QS4S T ■ PowerMOS transistor BUK457-400A BUK457-400B T -3 7 -1 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 002QS4S BUK457-400A BUK457-400B BUK457 -400A -400B

    transistor c 1974

    Abstract: No abstract text available
    Text: 11 N AI1ER PHILIPS/DISCRETE bbS3=!31 001370a T QhZ D 86D 0 1 4 7 0 D 11 T BLW60 3 7- If _ V.H.F. P O W E R TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and 0 operated mobile, industrial and m ilitary transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized.


    OCR Scan     		PDF 001370a BLW60 0D13720 transistor c 1974

    Untitled

    Abstract: No abstract text available
    Text: Wtipl H E W L E T T mLftMP A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • Am plifier Tested 900 MHz


    OCR Scan     		PDF AT-31011 AT-31033 AT-31011: AT-31033: OT-143 AT-31011 AT-31033 5963-1862E 5965-1401E

    BUK456

    Abstract: BUK456-60A BUK456-60B T0220AB
    Text: PHILIPS INTERNATIONAL bSE T> B 7 1 1 D 5 2 b D D b m O t i 267 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF BUK456-60A/B T0220AB BUK456 BUK456-SQA/B BUK456-60A BUK456-60B

    BUZ15

    Abstract: transistor buz IEC134 t03 package transistor pin dimensions
    Text: PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ15 ObE t • btS3131 0 0 m S S 4 1 T '3 f'/3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ15 bt53i3i La-11 bb53131 t-39-13 BUZ15 transistor buz IEC134 t03 package transistor pin dimensions

    Untitled

    Abstract: No abstract text available
    Text: S A M S U N G SEM IC O ND UC TOR INC MMBA811C5 IME D | T'Jfc.MlMa 0007228 T | PNP EPITAXIAL SILICON TRANSISTOR T - a q - Ie! DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic CoBector-Base Voltage CoNector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF MMBA811C5 OT-23 MMBT5086