TO-220FN
Abstract: No abstract text available
Text: Magazine T0220FN code Magazine PVC material Polyvinyl chloride Package name Renesas code TO-220FN PRSS0003AB-A Previous code T220FN Maximum storage No. Maximum storage No. Maximum storage No. Packing form Transistor/Magazine Magazine/Inner box Transistor/Inner box
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T0220FN
O-220FN
PRSS0003AB-A
T220FN
TO-220FN
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wk 2 e transistor
Abstract: transistor BU 705 BUT21
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in T0220AB envelope specially suited for high frequency electronic lighting ballast applications.
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BUT211
T0220AB
T0220AB1
wk 2 e transistor
transistor BU 705
BUT21
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BUT21
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in T0220AB envelope specially suited for high frequency electronic lighting ballast applications.
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BUT211
T0220AB
BUT21
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TRANSISTOR C 557 B
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effeot power transistor in a plastic envelope. The device is intended for use in Automotive and general purpose switching applications. PINNING-T0220AB
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BUK456-60H
PINNING-T0220AB
TRANSISTOR C 557 B
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TRANSISTOR C 557 B
Abstract: TRANSISTOR C 557 B W 21
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Automotive and general purpose switching applications. PINNING - T0220AB
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BUK456-60H
T0220AB
TRANSISTOR C 557 B
TRANSISTOR C 557 B W 21
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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MP-25
Abstract: NP40N06CLC NP40N06DLC NP40N06ELC TO-220SMD
Text: Preliminary Product Information MOS Field Effect Transistor NP40N06CLC,NP40N06DLC,NP40N06ELC N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high voltage switching application.
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NP40N06CLC
NP40N06DLC
NP40N06ELC
175dgree
027QMAX.
1000pF
O-220AB
O-262AA
O-220SMD
MP-25
NP40N06ELC
TO-220SMD
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11Al GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in T0220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control
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BUT11Al
T0220AB
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Untitled
Abstract: No abstract text available
Text: MJE13007 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH CURRENT CAPABILITY APPLICATIONS . SWITCHING REGULATORS . MOTOR CONTROL DESCRIPTION The MJE13007 is a silicon multiepitaxial mesa NPN power transistor mounted in Jedec T0-220
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MJE13007
MJE13007
T0-220
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11Al GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in T0220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control
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BUT11Al
T0220AB
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
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BUJ103A
T0220AB
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ304A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
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BUJ304A
T0220AB
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BUT12
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a T0220AB envelope specially suited for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,
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BUT12AI
T0220AB
BUT12
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BUJ301A
Abstract: T0220AB
Text: Objective specification Philips Semiconductors Silicon Diffused Power Transistor BUJ301A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220A B envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
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BUJ301A
T0220AB
T0220AB;
T0220
BUJ301A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a T0220A B envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
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BUJ204A
T0220A
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BUJ105A
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
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BUJ105A
T0220AB
1E-02
BUJ105A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ205A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
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BUJ205A
T0220AB
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BUJ303A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a T0220A B envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
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BUJ303A
T0220A
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T77b
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a T0220A B envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
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BUJ303A
T0220A
T77b
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403A GENERAL DESCRIPTION High-voltage, high-speed pianar-passivated npn power switching transistor in T0220AB envelope intended for use in nigh frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
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BUJ403A
T0220AB
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ301A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
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BUJ301A
T0220AB
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
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BUJ303A
T0220AB
1000BUJ303A
100US
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NPN Transistor VCEO 1000V
Abstract: LB 137 transistor
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed pianar-passivated npn power switching transistor in a T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
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BUJ204A
T0220AB
MAX04A
100US
NPN Transistor VCEO 1000V
LB 137 transistor
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BUT12
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a T0220AB envelope specially suited for use in overhead/nigh frequency lighting ballast applications and converters, inverters, switching regulators,
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BUT12AI
T0220AB
20icon
1E-01
1E-02
BUT12
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