TRANSISTOR T07 Search Results

TRANSISTOR T07 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR T07 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
PDTA144 Abstract: transistor t07 PDTA144E Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTA144EU PNP resistor-equipped transistor Product specification Supersedes data of 1997 Sep 09 File under Discrete Semiconductors, SC04 1998 May 19 Philips Semiconductors Product specification PNP resistor-equipped transistor	Original	M3D102 PDTA144EU MAM135 PDTA144EU OT323) SCA60 115104/1200/04/pp8 PDTA144 transistor t07 PDTA144E	PDF
Untitled Abstract: No abstract text available Text: nc. AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 2N* •» -1 NPN SILICON ANNULAR TRANSISTOR H."K \|«, Jji •MAXIMUM RATINGS o.soa Ruing Collector-Emitter VoltageCollector-Bale Voltage Emitter-Base Vottage	Original	100MHz) 140kHz) 500MHz)	PDF
2N2708 Abstract: No abstract text available Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 November 1999 INCH-POUND MIL-PRF-19500/302C 1 August 1999 SUPERSEDING MIL-S-19500/302B 20 January 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN,	Original	MIL-PRF-19500/302C MIL-S-19500/302B 2N2708, MIL-PRF-19500. T0-72) 2N2708	PDF
log conformance dual npn Abstract: NPN Monolithic Transistor Pair Text: LS318 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems Log Conformance Monolithic Dual NPN The LS318 is a monolithic pair of NPN transistors mounted in a single TO-78 package. The monolithic dual chip design reduces parasitics and is ideal for use in logging applications.	Original	LS318 T0-78 log conformance dual npn NPN Monolithic Transistor Pair	PDF
t07 transistor Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bTE D APX bbS3T31 0028832 T07 BLU30/28 • UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile	OCR Scan	bbS3T31 BLU30/28 BLU30/28 OT119) t07 transistor	PDF
BFQ42 Abstract: w7 transistor transistor w7 IRF 502 TRANSISTOR BLW29 transistor j18 Si NPN c25a f0pf philips bfq42 Text: P H IL IP S El b5E D INTERNATIONAL 711002b G0b2bD2 3 b l • P H I N BFQ42 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in cl ass-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V . The transistor is resistance stabilized and is	OCR Scan	711002b BFQ42 BFQ42 BLW29 7Z77622 7Z77623 7Z77624 w7 transistor transistor w7 IRF 502 TRANSISTOR transistor j18 Si NPN c25a f0pf philips bfq42	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007	PDF
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
1N6227 Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
BUK455-600B Abstract: BUK455 600B Text: N AI1ER P H I LI PS /D I SC RE T E bTE D • bbS3^31 003QbbS Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode tield-effect power transistor in a plastic envelope. The device is intended fcr use in Switched Mode Power Supplies	OCR Scan	D030bbs BUK455-600B -T0220AB BUK455 600B	PDF
2N4839 Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792 Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i	OCR Scan	2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 050-H O-107 O-126 2N4839 TO114 package 2N5860 2N1724A 2N3716	PDF
Untitled Abstract: No abstract text available Text: Al BF 173 NFN SILICON PLANAR EPITAXIAL TRANSISTOR M IC R O EEEL— EE CD " T R O r s i I S CASE T0-72J THE BF173 IS AN NFN SILICON PLANAR EPITAXIAL TRANSISTOR INTENDED FOR USE IN VIDEO IF AMPLIFIERS AND PARTICULAR FOR THE OUTPUT STAGES. ABSOLUTE MAXIMUM RATINGS	OCR Scan	T0-72J BF173 200mA 09g4g3 35MHz	PDF

2N5302 EB Abstract: 2N1463 2n4271 Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 D O D O D ^ fi ■ General Transistor Corporation CASE TO-3,TO-39 lc MAX = 3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3	OCR Scan	SaD01 2N37S9 2N3790 2N3792 2N4398 2N4399 2N4902 2N4903 2N4904 2N4905 2N5302 EB 2N1463 2n4271	PDF
MHQ6100 Abstract: IC AL 6001 Text: MOTOROLA SC XSTRS/R F Mt E D b3b?2SM 00^5457 b •MOTb MOTOROLA S E M IC O N D U C T O R i TECHNICAL DATA MHQ6100A DM0 Quad Small-Signal Transistor Suffixes: HX, HXV ii/ t u r Processed per MIL-S-19500/xxx NPN/PNP Com plem entary Pair QUAD TRANSISTOR NPN/PNP SILICON	OCR Scan	MHQ6100A MIL-S-19500/xxx O-116) MHQ6100 IC AL 6001	PDF
cb pj 47 diode Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE b^E J> bbS3T31 DD3227fl 070 H A P X Product specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor _ LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors	OCR Scan	bbS3T31 DD3227fl LFE15600X cb pj 47 diode	PDF
transistor t07 Abstract: Transistor B 886 t07 transistor PDTA144 PDTA144E Text: Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTA144EU FEATURES • Built-in bias resistors R1 and R2 typ. 47 k ii each • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS	OCR Scan	PDTA144EU OT323) OT323 PDTC144EU. PDTA144EU transistor t07 Transistor B 886 t07 transistor PDTA144 PDTA144E	PDF
Untitled Abstract: No abstract text available Text: PD - 9.1033A International ËëlRectffier IRGP450U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency cun/e	OCR Scan	IRGP450U O-247AC 4A554S2 2040b	PDF
2n189 Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152 Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits	OCR Scan	2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA RN2701 ~RN2706 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2701, RN2702, RN2703, RN2704, RN2705, RN2706 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • Including Two Devices in USV (U ltra Super Mini Type with. 5	OCR Scan	RN2701 RN2706 RN2701, RN2702, RN2703, RN2704, RN2705, RN2701 RN2702	PDF
c6073 Abstract: IC LM7912 LM7909 LM7905 CZ LM7915 LM7905 8 pin LM7908 LM7908 voltage regulator ic LM79xx voltage regulator ic LM7900 Text: LM 7900 Series 3-Terminal Negative O utput Voltage Regulators 1Semiconductor t fea tu res' [ P IN ARRA N G EM EN T" No External Components Required Internal Thermal Overload Protection Internal Short-Circuit Current Limiting Output Transistor Safe-Axea Compensation	OCR Scan	LM7900 LM7800 -120Hz 37n4fl2 c6073 IC LM7912 LM7909 LM7905 CZ LM7915 LM7905 8 pin LM7908 LM7908 voltage regulator ic LM79xx voltage regulator ic	PDF
transistor t07 Abstract: t07 transistor Text: SIEMENS BCR 519 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R-\|=4.7kil _GL ET Ordering Code Pin Configuration XKs UPON INQUIRY 1 =B Package II CO O Marking BCR 519 LU II CVJ	OCR Scan	OT-23 53SbQS transistor t07 t07 transistor	PDF
Untitled Abstract: No abstract text available Text: - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Description CECC Ceramic Surface Mount Dual Transistor Dual device in CSM Ceramic Surface Mount Dual device in CSM 50004-017 50004-017 50004-017 50004-017 50004-133 50004-133 50003-021 50003-021 Polarity Package lc_cont	OCR Scan		PDF

TRANSISTOR T07 Search Results

TRANSISTOR T07 Result Highlights (5)

TRANSISTOR T07 Datasheets Context Search

PDTA144

Untitled

2N2708

log conformance dual npn

t07 transistor

BFQ42

2N2222A 338

y51 h 120c

LG color tv Circuit Diagram schematics

IC HXJ 2038

1N6227

BUK455-600B

2N4839

Untitled

2N5302 EB

MHQ6100

cb pj 47 diode

transistor t07

Untitled

2n189

Untitled

c6073

transistor t07

Untitled