TRANSISTOR T1P Search Results

TRANSISTOR T1P Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR T1P Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
pHEMT transistor 360 Abstract: powerband Text: T1P2701012-SP 10 W, 12V, 500 MHz—3GHz, PowerbandTM pHEMT RF Power Transistor Introduction The T1P2701012-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 3GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 10watts across	Original	T1P2701012-SP 500MHz 10watts 15Watts 500MHz-2 pHEMT transistor 360 powerband	PDF
RF POWER TRANSISTOR Abstract: T1P3002028-SP transistor jc 817 Text: T1P3002028-SP 20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 20watts across	Original	T1P3002028-SP 500MHz 20watts 26Watts 26Watt RF POWER TRANSISTOR transistor jc 817	PDF
transistor 746 Abstract: No abstract text available Text: T1P3003028-SP 30 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3003028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 30watts across	Original	T1P3003028-SP 500MHz 30watts 40Watts 40Watt transistor 746	PDF
pHEMT transistor 360 Abstract: "RF Power Transistor" T1P3005028-SP Text: T1P3005028-SP 50 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3005028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 50watts across	Original	T1P3005028-SP T1P3005028-SP 500MHz 50watts 65Watts 65Watt pHEMT transistor 360 "RF Power Transistor"	PDF
tip122 tip127 audio amp schematic Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.	Original	DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
RT1N234X Abstract: RT1P234C RT1P234M RT1P234T2 RT1P234U RT1P234X Text: T r a n s is to r RT1P234X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION HT1P234X is a OUTLINE one chip transistor RT1P234U with built-in bias resistor.NPN type Is RT1N234X UNIT mm DRAWING R T1P 234C 23	OCR Scan	RT1P234X HT1P234X RT1N234X RT1P234T2 RT1P234U RT1P234M RT1P234C SC-53 O-236 RT1N234X RT1P234C RT1P234M RT1P234T2 RT1P234U	PDF
TIP2955T Abstract: TIP3055T Text: DEVELOPMENT DATA T1P2955T This data sheet contains advance information and specifications are subject to change w ithout notice. _ SILICON EPITAXIAL-BASE POWER TRANSISTOR P-N-P transistor in a plastic envelope. W ith its n-p-n complement TIP3055T they are prim arily intended	OCR Scan	TIP2955T TIP3055T O-220. bbS3T31 TIP2955T	PDF
RT1N231X Abstract: RT1P231C RT1P231M RT1P231S RT1P231T2 RT1P231U RT1P231X Text: T r a n s is to r RT1P231X SERIES Transistor WïUi Resistor For Switching Application Silicon PNP Epitaxial Type OUT Li ME DESCRIPTION RT1P231X is a öriä chip transistor DRAWING RT1PÍ31U with built-in bias resistor.NPN type Is RT1N231X UNIT: mm R T1P 231C	OCR Scan	RT1P231X RT1N231X RT1P231T2 RT1P231U RT1P231M RT1P231C SC-53 RT1P231S RT1N231X RT1P231C RT1P231M RT1P231S RT1P231T2 RT1P231U	PDF
T1P3005028-SP Abstract: 50w transistor RF power transistor Text: TriQuint It TM PO W ER B A N D SEMICONDUCTOR T1P3005028-SP 50W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction Table 1. M axim um Ratings Sym The T1P3005028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed	OCR Scan	T1P3005028-SP T1P3005028-SP 500MHz 50watts 50w transistor RF power transistor	PDF
transistor B 764 Abstract: 952625 FCD50 74386 P1D8 pHEMT transistor 360 transistor di 960 T1P3002028-SP powerband N4030 Text: TriQuint It TM PO W ER BAN D SEMICONDUCTOR T1P3002028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.	OCR Scan	T1P3002028-SP T1P3002028-SP 500MHz 30watts transistor B 764 952625 FCD50 74386 P1D8 pHEMT transistor 360 transistor di 960 powerband N4030	PDF
transistor B 764 Abstract: P1D8 179502 P3003 T1P3003028-SP 012673 0823838 Text: TriQuint It TM PO W ER B A N D SEMICONDUCTOR T1P3003028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3003028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.	OCR Scan	T1P3003028-SP T1P3003028-SP 500MHz 30watts transistor B 764 P1D8 179502 P3003 012673 0823838	PDF
RT1P441T2 Abstract: RT1N441X RT1P441C RT1P441M RT1P441S RT1P441U Text: T r a n s is to r R T 1 P 4 4 1 X S E R IE S Transistor WïUi Resistor For Switching Application Silicon PNP Epitaxial Type OUT Li ME DESCRIPTION H T1P441X is a one chip transistor DRAWING UNIT: mm RT1P441U with b u ilt-ir bias resistor.NPN type is RT1N441X	OCR Scan	P441X HT1P441X RT1N441X RT1P441U RT1P441C RT1P441M RT1P441T2 RT1P441T2 RT1N441X RT1P441C RT1P441M RT1P441S RT1P441U	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF

BFR53 Abstract: transistor 1061 transistor h 1061 Text: • 1.1,S3 S 31 00251Mb MS3 H A P X Philips Semiconductors Product specification AflER P H I L I P S / D I S C R E T E b7E D NPN 2 GHz wideband transistor DESCRIPTION BFR53 PINNING NPN transistor in a plastic SOT23 envelope. It is intended for application In thick and thin-film	OCR Scan	00251Mb BFR53 bbS3T31 BFR53 transistor 1061 transistor h 1061	PDF
Untitled Abstract: No abstract text available Text: TIP30F TIP30AF; TIP30BF T1P30CF; TIP30DF J SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, fo r use in audio output stages and for general purpose amplifier and high-speed switching applications.	OCR Scan	TIP30F TIP30AF; TIP30BF T1P30CF; TIP30DF OT186 TIP29F, TIP29AF, TIP29BF, TIP29CF	PDF
TtP41C Abstract: CURTO TI41C TIP41B RT60 Text: JIANGSU CHANGJIANG ELECTRONIC S TECHNOLOGY CO. LTD TQ-220 Plastic-Encapsulate Transistors TIP41A/41B/41C TRANSISTOR i NPN FEATURES P ow er dissipation Pgm Collector current U ^ 2 iS W i Tgrnb=25 < '> ft CQiieelor-base voltage ViEiiicED • T1P41A ' TIP41B	OCR Scan	O-220 TIP41A/41B/41C O-220 TIP41B TtP41C 11tlA, TtP41C CURTO TI41C RT60	PDF
T1P122 Abstract: PNP POWER TRANSISTOR T1P122 PNP POWER TRANSISTOR TO220 T1P142F TIP1411 T1P142 TIP125 TIP140F TIP141F rtip141 Text: SAMSUNG SEMICONDUCTOR 14E INC O \| 7 cU , 4 1 4 a 0007740 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I 26 MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO-220 • Complement to T1P121 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Collector-Base Voltage	OCR Scan	O-220 TIP125 P140T/141T/142T T-33-29 T1P140--JT1P14V T1P122 PNP POWER TRANSISTOR T1P122 PNP POWER TRANSISTOR TO220 T1P142F TIP1411 T1P142 TIP140F TIP141F rtip141	PDF
30df Abstract: AI mm sot 553 TIP29BF TIP29CF TIP29DF TIP29F TIP30AF TIP30BF TIP30CF TIP30DF Text: TIP30F TIP30AF; TIP30BF ^ T1P30CF; TIP30DF SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a S O T 1 8 6 envelope with an electrically insulated mounting base, for use in audio output stages and for general purpose amplifier and high-speed switching applications.	OCR Scan	TIP30F TIP30AF; TIP30BF TIP30CF; TIP30DF OT186 TIP29F, T1P29AF, TIP29BF, TIP29CF 30df AI mm sot 553 TIP29BF TIP29DF TIP29F TIP30AF TIP30BF TIP30CF TIP30DF	PDF
RT1N434X Abstract: RT1P434M RT1P434S TRANSISTOR 1J5 RT1P434C RT1P434T2 Text: R T - I P434X SERIES For Switching Application Silicon PNP Epitaxial Type DESCRIPTION HT1P434X is OUTLINE ä one chip transistor UNIT mm DRAWING R T1P 434C RT1P434U with b u ilt-in bias resistor.NPN type Is RT1N434X „ L5 0.35 0.$ 2 fl 03: 0JE5 15 Í.5& FEATURE	OCR Scan	RT-IP434X HT1P434X RT1N434X RT1P434T2 RT1P434M PT1P434C RT1N434X RT1P434M RT1P434S TRANSISTOR 1J5 RT1P434C	PDF
transistor sc 1972 Abstract: TIP3055 TIP2955 NPN power transistor TIP2955 transistor PNP TIP2955 texas instruments tip3055 Text: TIP2955 PNP SILICON POWER TRANSISTOR _ JA N U A R Y 1972 • R E V IS E D M AY 1995 • Designed for Complementary Use with the T1P3055 Series • 90 W at 25°C Case Temperature • 15 A Continuous Collector Current SOT-93 PAC KAG E	OCR Scan	TIP2955 TIP3055 OT-93 transistor sc 1972 TIP2955 NPN power transistor transistor PNP TIP2955 texas instruments tip3055	PDF
RT1N440X Abstract: RT1P440C RT1P440M RT1P440U RT1P440X 5c70 Text: R T1P440X SERIES Tr, „ J 7" * For Switching Application Silicon PNP Epitaxial Type OUTLINE D E S C R IP T IO N RT1P440X is a one chip transistor with built-in bias resistor.NPN type is RT1N440X DRAWING U N IT m m RT1P440U RT1P440C . * £ _ 0j6S 1.5 0 i5	OCR Scan	RT1P440X RT1N440X 1P440C RT1P440TÃ RT1P440M RT1P4405 5C-70 RT1N440X RT1P440C RT1P440M RT1P440U 5c70	PDF
RT1P242T2 Abstract: DJB 1 RT1N242X RT1P242C RT1P242M RT1P242U RT1P242X TC236 Text: Transistor RT1 P242X SERIES Transi stor WïUi Resistor For Switching Application Silicon P N P Epitaxial Type OUT Li ME DESCRIPTION R T1P242X is a DRAWING UNIT: mm irne chip tra n s is to r RT1P242U w ith b u ilt - ir bias resistor.N P N ty p e is RT1N242X	OCR Scan	RT1P242X RT1N242X 47kft) RT1P242T2 RT1P242U RT1P242C RT1P242M TC-236 RT1P242T2 DJB 1 RT1N242X RT1P242C RT1P242M RT1P242U TC236	PDF
T1P42C Abstract: Power transistor TO-220 NPN 100 V, TIP 41C TIP 41c transistor T1P42A T1P42 TIP 42c transistor T1P-42C T1P49 t1p41 tlp42c Text: SAMSUNG S E M I C O N O U G TOR INC 14E TIP42 SERIES D \| 11142 0 0 0 7 7 2 2 - 7 \| TIP42/42A/42B/42C PNP EXITAXIAL SILICON TRANSISTOR T - MEDIUM POWER LINEAR N SWITCHING APPLICATIONS 73- zj • Com plem ent to T1P41/41AV41B/41C ABSOLUTE MAXIMUM RATINGS (Ta=25°C)	OCR Scan	TIP42 TIP42/42A/42B/42C) T1P41/41AV41B/41C T1P42 TIP42A T1P42B TIP42C T1P42A TIP42B T1P42C Power transistor TO-220 NPN 100 V, TIP 41C TIP 41c transistor T1P42A TIP 42c transistor T1P-42C T1P49 t1p41 tlp42c	PDF

TRANSISTOR T1P Search Results

TRANSISTOR T1P Result Highlights (5)

TRANSISTOR T1P Datasheets Context Search

pHEMT transistor 360

RF POWER TRANSISTOR

transistor 746

pHEMT transistor 360

tip122 tip127 audio amp schematic

la 4440 amplifier circuit diagram 300 watt

RT1N234X

TIP2955T

RT1N231X

T1P3005028-SP

transistor B 764

transistor B 764

RT1P441T2

sx3704

BFR53

Untitled

TtP41C

T1P122

30df

RT1N434X

transistor sc 1972

RT1N440X

RT1P242T2

T1P42C