200V transistor npn 2a
Abstract: T2096 T2096L-TM3-T T2096-TM3-T TO-251 Package QW-R21
Text: UNISONIC TECHNOLOGIES CO., LTD T2096 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The T2096 is a NPN Silicon Planar Transistors in TO-251 package. It is intended for high voltage, switching power supply and industrial applications. FEATURES
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T2096
T2096
O-251
T2096L
T2096-TM3-T
T2096L-TM3-T
QW-R213-017
200V transistor npn 2a
T2096L-TM3-T
T2096-TM3-T
TO-251 Package
QW-R21
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD T2096 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The T2096 is a NPN Silicon Planar Transistors in TO-251 package. It is intended for high voltage, switching power supply and industrial applications. FEATURES
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T2096
T2096
O-251
T2096-TM3-T
T2096L-TM3-T
T2096-TN3-T
T2096L-TN3-T
T2096-TN3-R
T2096L-TN3-R
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK545-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack
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BUK545-60A/B
BUK545
BUK545-60A/B
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fieid-effect power transistor in a plastic envelope. The device is intended for use in
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BUK552-100A/B
BUK552
-100A
-100B
T0220AB
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC144WU NPN resistor-equipped transistor Product specification Supersedes data of 1997 Dec 12 File under Discrete Semiconductors, SC04 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor
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M3D102
PDTC144WU
SC-70
OT323)
PDTA144WU.
SCA60
115104/1200/02/pp8
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The device features very low on-state resistance
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BUK7510-30
T0220AB
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Voltage clamped logic level FET GENERAL DESCRIPTION Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in automotive applications. It has
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BUK553-48C
T0220AB
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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Untitled
Abstract: No abstract text available
Text: PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, DC/DC and AC/DC converters, and in general purpose switching
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BUK456-1OOA/B
BUK456
-100A
-100B
T0220AB
BUK456-100A/B
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R1200
Abstract: diode v3e
Text: FF 50 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte VcES Maximum rated values Ic Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0 ,1 5 5 °C/W RthJC ° c / w DC, pro Zweig / per arm
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3403ES7
R1200
diode v3e
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transistor t20
Abstract: 2sj328
Text: P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SJ328,2SJ328-Z SWITCHING P-CHANNEL POWER MOS PET INDUSTRIAL USE DESCRIPTION T he 2SJ328 is P-channel M O S Field Effect Transistor designed PACKAGE DIMENSIONS in millimeters fo r solenoid, m o to r and la m p driver.
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2SJ328
2SJ328-Z
2SJ328
2SJ328,
transistor t20
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Untitled
Abstract: No abstract text available
Text: FF 50 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 50 A Ic Therm ische Eigenschaften Therm al properties Rthjc DC, pro B austein/p e r module 0,155 C/W ’C/W DC, pro Zweig / per arm 0,31 C/W
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3403ES7
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BUK453-500B
Abstract: T0220AB E04020
Text: N AMER P H I L I P S / D I S C R E T E b'IE D t . b s a 'm 00301=10 PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK453-500B
T0220AB
BUK4y3-500
E04020
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2SC4060
Abstract: T20W45FX
Text: SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4060 Case : MTO-3P T20W45FX Unit : mm 20A NPN RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SC4060
T20W45FX)
2SC4060
T20W45FX
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2SC4060
Abstract: T20W45FX
Text: SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4060 Case : MTO-3P T20W45FX Unit : mm 20A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SC4060
T20W45FX)
2SC4060
T20W45FX
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ZUMT5088
Abstract: ZUMT5179
Text: SOT323 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ZUMT5088 ISSUE 1 - DECEMBER 1998 PARTMARKING DETAIL - T20 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 4.5 V Continuous Collector Current
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OT323
ZUMT5088
ZUMT5179
100MHz
ZUMT5088
ZUMT5179
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2SC2945
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC2954 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION T h e 2 S C 2 9 5 4 is an NPN ep ita xia l silicon tra n sisto r d isign ed for low noise w ide ba nd a m p lifie r and bu ffe r a m p lifie r of O SC , for VH F
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2SC2954
2SC2954
2SC2945
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD T2096 NPN SILICON TRANSISTOR H I GH V OLT AGE T RAN SI ST OR ̈ DESCRI PT I ON The T2096 is a NPN Silicon Planar Transistors in TO-251 package. It is intended for high voltage, switching power supply and industrial applications.
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T2096
T2096
O-251
T2096L
T2096-TM3-T
T2096L-TM3-T
QW-R213-017
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Untitled
Abstract: No abstract text available
Text: T O S H IB A G T20G10KSM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 0 G 1 01 S M ) Unit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V(j e (5at) = 8V (Max.) (Iq = 130A) Enhancement-Mode
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T20G10KSM
GT20G10KSM
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PHW7N60
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor PINNING - SOT429 T0247 PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance Id F*tol RdS(ON) PIN CONFIGURATION MAX. UNIT 600 7 147 1.2
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PHW7N60
OT429
T0247)
PHW7N60
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Untitled
Abstract: No abstract text available
Text: EVALUATION KIT AVAILABLE MAX8739 TFT, LCD, DC-DC Converter with Operational Amplifiers General Description The MAX8739 includes a high-performance, step-up regulator and two high-current operational amplifiers for active-matrix thin-film transistor TFT liquid-crystal
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MAX8739
MAX8739
600kHz/1
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