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    TRANSISTOR T79 Search Results

    TRANSISTOR T79 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR T79 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-nolse, hlgh-gain amplification applications • N F = 1.1 dB,


    OCR Scan     		2SC5508 2SC5508-T2 Rn/50 13865E J1V0DS00 0DS00 PDF

    transistor marking T79 ghz

    Abstract: TT 2076 transistor MARKING T79 "NPN Transistor" transistor T79 ghz
    Text: dò l o X , , 1 PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications


    OCR Scan     		2SC5508 2SC5508 2SC5508-T2 transistor marking T79 ghz TT 2076 transistor MARKING T79 "NPN Transistor" transistor T79 ghz PDF

    transistor marking T79 ghz

    Abstract: marking T79 MARKING T79 "NPN Transistor" 2SC5508 2SC5508-T2 C10535E transistor marking T79
    Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA


    Original     		2SC5508 2SC5508-T2 transistor marking T79 ghz marking T79 MARKING T79 "NPN Transistor" 2SC5508 2SC5508-T2 C10535E transistor marking T79 PDF

    MJE 15024

    Abstract: NE662M04 transistor T79 ghz NA 6884 7011 NPN TRANSISTOR 0411 02 027 000 T79 "NPN Transistor"
    Text: NPN SILICON RF TRANSISTOR NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm • Flat Lead Style for better RF performance


    Original     		NE662M04 OT-343 NE662M04 6e-16 3e-15 4e-12 1e-12 MJE 15024 transistor T79 ghz NA 6884 7011 NPN TRANSISTOR 0411 02 027 000 T79 "NPN Transistor" PDF

    transistor marking T79 ghz

    Abstract: MARKING T79 "NPN Transistor" marking T79 transistor marking T79 2SC5508 2SC5508 application transistor 2SC5508 PU10521EJ01V0DS 2SC5508-T2 NEC 1357
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz


    Original     		2SC5508 2SC5508-T2 transistor marking T79 ghz MARKING T79 "NPN Transistor" marking T79 transistor marking T79 2SC5508 2SC5508 application transistor 2SC5508 PU10521EJ01V0DS 2SC5508-T2 NEC 1357 PDF

    150J10

    Abstract: 7011 NPN TRANSISTOR
    Text: NPN SILICON RF TRANSISTOR NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm


    Original     		NE662M04 OT-343 NE662M04 150J10 7011 NPN TRANSISTOR PDF

    MJE 15024

    Abstract: BF111 NE662M04 2SC5508 NE662M04-T2 NE662M04-T2-A S21E TRANSISTOR 9642 IC AT 6884
    Text: NPN SILICON RF TRANSISTOR NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm


    Original     		NE662M04 OT-343 NE662M04 NE662M0anty MJE 15024 BF111 2SC5508 NE662M04-T2 NE662M04-T2-A S21E TRANSISTOR 9642 IC AT 6884 PDF

    MARKING T79

    Abstract: transistor marking T79 ghz
    Text: A Business Partner of Renesas Electronics Corporation. Preliminary 2SC5508 / NE662M04 Data Sheet NPN SILICON RF TRANSISTOR R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES •


    Original     		2SC5508 NE662M04 R09DS0055EJ0200 R09DS0055EJ0200 MARKING T79 transistor marking T79 ghz PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet 2SC5508 NPN SILICON RF TRANSISTOR R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • • • • • <R> Ideal for low-noise, high-gain amplification applications


    Original     		2SC5508 R09DS0055EJ0200 2SC5508-A 2SC5508-T2 2SC5508-T2-A PDF

    MJE 15024

    Abstract: NE662M04 TRANSISTOR 9642 2SC550 2SC5508 NE662M04-T2 S21E 0411 02 027 000 007E-9
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE662M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm


    Original     		NE662M04 OT-343 NE662M04 MJE 15024 TRANSISTOR 9642 2SC550 2SC5508 NE662M04-T2 S21E 0411 02 027 000 007E-9 PDF

    ic LC 7218

    Abstract: NE662M04 LC 7011 NE662M04-T2 3335 2SC5508 S21E TRANSISTOR 9642 LC 7218 SOT 663 footprint
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCH TRANSISTOR NE662M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 23 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm


    Original     		NE662M04 OT-343 NE662M04 24-Hour ic LC 7218 LC 7011 NE662M04-T2 3335 2SC5508 S21E TRANSISTOR 9642 LC 7218 SOT 663 footprint PDF

    IC AT 6884

    Abstract: T79 SOT 23
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE662M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 23 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.59 mm


    Original     		OT-343 NE662M04 NE662M04 09e-12 22e-9 001e-12 IC AT 6884 T79 SOT 23 PDF

    free transistor equivalent book 2sc

    Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002 PDF

    2SK49

    Abstract: JA BJT P514 t430 transistor transistor T600 p745 h me 218l p745 Transistor F030 P460
    Text: NEC j m ^ T ix t x J u n c t io n Field E ffe ct T r a n s is t o r A 2SK49 N-Channel Silicon Junction Field Effect Transistor FM Tuner *1- ° i&MM'SLtë.ÿji'P-y V t f í O F M f ^ - B 0 / P A C K A G E DIM ENSIO NS Unit : mm O |yfs| ^ § ^ o I y fs I = 2 . 8 m ü T Y P . ( V d s = 5 . 0 V ,


    OCR Scan     		SC-43 2SK49 JA BJT P514 t430 transistor transistor T600 p745 h me 218l p745 Transistor F030 P460 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¡0 FUJITSU MICROELECTRONICS 31E D D 37 MT7ti2 Ga iS L >4 0 b HBFMI 010002850201000201000201000201020100 HIGH FREQ UENCY O PE R A TIO N A L A M P L IFIE R The Fujitsu MB3604 is a monolithic high frequency operational amplifier fabricated by Fujitsu Bipolar Technology.


    OCR Scan     		MB3604 B3604 0Q15b4b T-79-07-10 16-LEAD DIP-16C-C01) PDF

    LM12

    Abstract: lm12 op amp ILM12 LM12 OP amp IC LM12CK OF IC 723 linear regulator LM12K
    Text: LM12 NATL SEMICOND LINEAR S2E D • bSOllEM 0DLÖE3H b T-79-23 National Semiconductor LM12 (L/C/CL) 150W Operational Amplifier General Description The LM12 is a power op amp capable of driving ±35V at ±10A while operating from ±40V supplies. The monolithic


    OCR Scan     		T-79-23 LM12 lm12 op amp ILM12 LM12 OP amp IC LM12CK OF IC 723 linear regulator LM12K PDF

    TELEDYNE 1461

    Abstract: TELEDYNE+1461
    Text: TELEDYNE C O M PO N EN T S 3bE D • â^l?tOE DGG?fe.2b b « T S C * T * 7 0v- 0 ‘ 7 - \ C WTELEDYNE COMPONENTS 1461 OPERATIONAL AMPLIFIER — HIGH-SPEED, HIGH-POWER, VMOS-OUTPUT FEATURES GENERAL DESCRIPTION ■ ■ ■ ■ ■ ■ ■ The 1461 is an extremely fast, FET-input, VMOS-output, power operational amplifier. It operates from +15V to


    OCR Scan     		1461X1 01--Lf fiS17bOB DD07b3B TELEDYNE 1461 TELEDYNE+1461 PDF

    LM12K

    Abstract: BRIDGE-RECTIFIER 5v 1A BRIDGE-RECTIFIER 15v LM12CK LM12CLK BRIDGE-RECTIFIER 100v 1a op amp 40v 100w LM12C LM12 BRIDGE-RECTIFIER operation
    Text: LM12 NATL SEMICOND LINEAR S2E D • bSOllEM 0DLÖE3H b T-79-23 National Semiconductor LM12 (L/C/CL) 150W Operational Amplifier General Description The LM12 is a power op amp capable of driving ±35V at ±10A while operating from ±40V supplies. The monolithic


    OCR Scan     		T-79Z3 TUH/8704-29 LM12K BRIDGE-RECTIFIER 5v 1A BRIDGE-RECTIFIER 15v LM12CK LM12CLK BRIDGE-RECTIFIER 100v 1a op amp 40v 100w LM12C LM12 BRIDGE-RECTIFIER operation PDF

    2 volt zener

    Abstract: CA314Q REGULATOR IC 7915 CA3140S power supply in ic 7915 circuit diagram ano51 D2201 IC Generator to 10MHz triangle CS27a ca314 DE
    Text: HA RR IS S E M I C O N D S E C T O R H a r r i 4QE ]> • 4302571 0031746 7 BIHAS T-K-IS s C A 3 1 4 0 A C A 3 1 4 0 BiMOS Operational Amplifiers with MOSFET Input/Bipolar Output August 19 9 1 Features Description • MOSFET input Stage The CA3140A and CA3140 are Integrated-circutt


    OCR Scan     		CA3140A CA3140 CA3130 CA3140H. 2 volt zener CA314Q REGULATOR IC 7915 CA3140S power supply in ic 7915 circuit diagram ano51 D2201 IC Generator to 10MHz triangle CS27a ca314 DE PDF

    REGULATOR IC 7915

    Abstract: CA3160AS 7915, 15V regulator CA3130S 7915 circuit diagram GA3080
    Text: HARRIS SEfllCOND SECTOR 4DE D 3 H a r r is • 43DS271 0D317ba 2 « H A S CA3160A CA3160 ' BiMOS Operational Amplifiers with MOSFET Input/CMOS Output A u gu st 1 9 9 1 Features Description • MOSFET Input Stage Provides: The CA3160A and CA3160 are Integrated circuit


    OCR Scan     		43DS271 0D317ba CA3160A CA3160 CA3160 CA3130 3600IC CA3160. CA3600E REGULATOR IC 7915 CA3160AS 7915, 15V regulator CA3130S 7915 circuit diagram GA3080 PDF

    OF IC 7909

    Abstract: IR91308 REGULATOR IC 7909 piezoelectric alarm ic 7909 7909 regulator 7909 voltage regulator IIR91308 BD 144 transistor ic siren
    Text: SHARP ELEK/ MELEC 1SE DIV D I aiflO TTà []GG203fc. T I IR 91308 Program m able Power Operational Am plifier T-79-09 IR91308 Programmable Power Operational Amplifier • Description The IR91308 is an internally compensated medium power operational amplifier, which has the added


    OCR Scan     		IR91308 T-79-09 IR91308 106dB 0G050M1 T-79-09 680kfl OF IC 7909 REGULATOR IC 7909 piezoelectric alarm ic 7909 7909 regulator 7909 voltage regulator IIR91308 BD 144 transistor ic siren PDF

    SL560AC

    Abstract: plessey SL560 SL560 PLESSEY
    Text: 12E D PLESSEY SEMICO NDU CTORS • 7220513 G O 10316 b SL560AC 300MHz LOW NOISE AMPLIFIER CONFORMS TO MIL-STD-883C CLASS B This monolithic integrated circuit contains three very high performance transistors and associated biasing components in an eight-lead TO-5 package forming a 300MHz low noise


    OCR Scan     		SL560AC 300MHz MIL-STD-883C SL560 MIL-M-38510 T-90-20 20-PIN SL560AC plessey SL560 SL560 PLESSEY PDF

    TB1238AN

    Abstract: IC TB1238AN TA8269H TMPA8821PSNG TC90A85AF TMPA8823 TB1254AN TB1261ANG tb1238an toshiba TA7317P
    Text: ASSPs Audio & Video Equipment ICs z 62 Communications Equipment ICs z 85 High-Frequency Power Amp ICs z 88 Automotive ICs z 89 Display Driver ICs z 92 Network & Interface ICs z 95 Peripheral Equipment LSIs z 96 Digital Temperature Compensation ICs z 97 Other Consumer Product ICs & LSIs z 98


    Original     		TMPA8812CxDNG TMPA8821CxNG TMPA8823CxNG TMPA8827CxNG TMPA8829CxNG TMPA8857CxNG TMPA8859CxNG TMPA8812PSNG P-SDIP56-600-1 TMPA8821PSNG TB1238AN IC TB1238AN TA8269H TMPA8821PSNG TC90A85AF TMPA8823 TB1254AN TB1261ANG tb1238an toshiba TA7317P PDF

    SL550G

    Abstract: 7520S13 SL550 plessey radar a/plessey sl550
    Text: P L E S S E Y SEMICONDUCTORS 12E D I Üw SPe L ESSIY m ic o n d u c to rs . 7520S13 000771,0 4 | mi. — . . i T - l ° \ - 0 1 - ÌO SL550G LOW NOISE WIDEBAND AMPLIFIER WITH EXTERNAL GAIN CONTROL The SL550 is a silicon integrated circuit designed for use


    OCR Scan     		7520S13 SL550G SL550 60MHz, SL550G plessey radar a/plessey sl550 PDF