TRANSISTOR TE 901 Search Results

TRANSISTOR TE 901 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR TE 901 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
JE9013 Abstract: JE9012 92PA3 Text: SEC NPN SILICON TRANSISTOR ELECTRON DEVICE JE9013 DESCRIPTION The JE 9013 is designed fo r use in 1 W o u tp u t a m p lifie r o f PACKAGE DIMENSIONS portable radios in class B push-pull operation. in m illim e te rs inches 5.2 MAX. (0.204 MAX.! FEATURES	OCR Scan	JE9013 JE9013 JE9012. JE9012 92PA3	PDF
2SC950 Abstract: 2SC951 2sc950 transistor 2SA573 2SA574 Text: Si PNP TRANSISTOR 2SA573, 2SA574 EPOXY MOLDED, AUDIO AMP., RF AMP., SWITCHING • A BSO LU TE M A X IM U M R A T IN G S Ta : 25°C 2SA573 -3 0 -2 5 "60 -5 0 V V ceo . . V ebo .	OCR Scan	2SA573, 2SA574 2SA573 -50mA, -10mA 2SA573 2SA574, 2SC950 2SC951 2sc950 transistor 2SA574	PDF
JE9014 Abstract: GE-45 Text: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE JE9014 DESCRIPTIO N The JE 9014 is designed fo r use in pre-am plifier o f low level PAC KAG E D IM EN SIO N S in m illim e te rs inches and low noise. FE A TU R E S • 5.2 MAX. High to ta l power dissipation. ( P j : 625 mW)	OCR Scan	JE9014 JE9014 JE9015. GE-45	PDF
Untitled Abstract: No abstract text available Text: KSA812 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER S O T-23 • C om plem ent to KSC 1623 • Col lector-Base Voltage: VCbo= -60V A BSO LU TE M AXIMUM RATINGS TA=25°C C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage	OCR Scan	KSA812	PDF
2SC4008 Abstract: No abstract text available Text: 2SA1635 2SC4008 Transistors I Power Transistor 80V, — 4A 2SA1635 • F e a tu r e s • A b so lu te maximum ratings ( T a = 2 5 t ) 1 ) Low VcE(sat>. (Typ. —0.3V ;at lc/la=«=—2 /—0.2A ) Param eter C ollecto r-base voltage Coilector-em itter voltage	OCR Scan	2SA1635 2SC4008 2SA1635 94L-646-D97) 2SC4008	PDF
NE32584C-T1 Abstract: nec 3435 transistor am 4428 Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.	OCR Scan	NE32584C NE32584C-T1A NE32584C-T1 nec 3435 transistor am 4428	PDF
Untitled Abstract: No abstract text available Text: M C C SOT-23 P la s tic -E n c a p s u la te T ra n s is to rs ^ 2SC1623 TRANSISTOR NPN 1.BASE 2 .EMITTER 3.COLLECTOR FEATURES ^6%4rdlsslpation Pcm : 0.2 W (Tamb=25"C) Collector current ICM: H- 0.1A 2.4 Collector-base voltage V(br)cbo :60V Operating and storage Junction temperature range	OCR Scan	OT-23 2SC1623	PDF
BLY87A Abstract: transistor bly87a C 1008 y transistor RF POWER TRANSISTOR NPN T-33-07 a 1009 Text: PHILIPS 41ED H 7 1 1 0 0 2 b G 027C 1G 3 INTERNATIONAL HPHIN BLY87A M A I N T E N A N C E TYPE T -3 3 -0 7 V.H.F. POWER TRANSISTOR N -P -N silico n p la n a r e p ita x ia l tra n s is to r f o r use in class-A , B and C o p e ra te d m o b ile and m ilit a r y	OCR Scan	711002b G027C1G3 BLY87A T-33-07 BLY87A transistor bly87a C 1008 y transistor RF POWER TRANSISTOR NPN T-33-07 a 1009	PDF
Transistor 9012 ax Abstract: transistor s 9012 nt transistor s9013 transistor s 9012 S9012 S9013 I-176 transistor c 9012 Text: S9013 NP N EP ITAXIAL S ILICON TRANSISTOR Ge nera l Purpos e Applica tion Colle ctor Curre nt Ic=500mA TO- 92 Colle ctor P owe r Dissipa tion P c=625mW Compleme ntary to S 9012 ABSOLUTE MAXIMUM RATINGS Characteristic Ta =25 Symbol Value Unit Collector-Ba s e Volta ge	Original	S9013 500mA 625mW 100MHz 100mA Transistor 9012 ax transistor s 9012 nt transistor s9013 transistor s 9012 S9012 S9013 I-176 transistor c 9012	PDF
transistor BR 9013 Abstract: NPN 9013 transistor c 9013 9013 npn transistor br 9013 transistor 9012 9013 9013 transistor Transistor 9013 9013 pnp transistor npn c 9013 Text: HN 9013 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, G and H, according to its DC current gain. As complementary type	OCR Scan		PDF
9011 9012 9013 9014 9018 Abstract: 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015 Text: 'ty i / >; •i CL9000 i ÎÏ t it -V, 1'* r-t, i Vj 1t E i SERIES AM FM RADIO TRANSISTOR KIT G U ID E SELECTION FOR AM / FM RADIO TRANSISTOR KIT Output AM R EC EIV ER? Y _ son IF2 IF1 Conv. H 90 H 9012 AF Amp. 9014 M 90U SP. or <1 :9015 9013 Output FM R EC EIV ER	OCR Scan	CL9000 T0-92B 10kfi 9011 9012 9013 9014 9018 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015	PDF
9014 ch Abstract: transistor npn c 9014 9018 transistor transistor c 9018 9011 9012 9013 9014 9018 100-10L 9018 transistor 9013 NPN audio output 9011 9012 pnp transistor Text: »v'.-T i V.y*, 7 “ •1 v í- j m £?\| P Im I I I m . C-iS.fi w - f , , :;1 \| AM. FM RADIO TRANSISTOR KIT „ L’ J V->.' ., t« V SELECTION CUIDE FOR FIVI RADIO TRANSISTOR KIT A IVI Output KM 9012 AM RECEIVER w AF Amp- IF 2 IF Conv. SP. KM90J4 KM 9011	OCR Scan	O-92A 9014 ch transistor npn c 9014 9018 transistor transistor c 9018 9011 9012 9013 9014 9018 100-10L 9018 transistor 9013 NPN audio output 9011 9012 pnp transistor	PDF
CP1005 Abstract: 9011 9012 9013 9014 9018 C 9014 transistor transistor 9014 C npn 9011 NPN transistor 9011 transistor 9015 PNP 9016 9013 NPN Output Transistor transistor npn c 9014 Text: fi* £ ,. ¿YrA \ *j i w 'äf? m m H :;1 i Ä \jif- ^ s •'«•J-, m &3W^m¡jfir . Ï 'iS.fi. I FM SERIES AM. FM RADIO TRANSISTOR KIT - ^ttk SELECTION AIV! K M 9000 ¡8a¡$ W bJ . GUIDE FOR RADIO TRANSISTOR KIT Output KM 9012 AM RECEIVER? y Conv. IF KM901I	OCR Scan	KM90II KM90I5 KM901I/8 KM90II/8 KM90I4 KM9015 KM90I: KM90i to-92a CP1005 9011 9012 9013 9014 9018 C 9014 transistor transistor 9014 C npn 9011 NPN transistor 9011 transistor 9015 PNP 9016 9013 NPN Output Transistor transistor npn c 9014	PDF
Untitled Abstract: No abstract text available Text: SIEMENS Reflexlichtschranke im SMT-Gehäuse Light Reflection Switch in SMT Package SFH 901 Vorläufige Daten Preliminary Data 6.2 5.8 ,3.4, 4.2 3.8 3.0 mio do 0.5 0.3 1.27 spacing GE006840 SFH 901 /9 0 2 1 Anode \| - \| EmiHer \| Collector \| Base \| Cathode Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.	OCR Scan	GE006840 OH000779 0H00078I	PDF

JE9016 Abstract: A78G Text: NPN SILICON TRANSISTOR ELECTRON DEVICE JE9016 DESCR IPTIO N The JE 9016 is designed fo r use in A M converter and FM PAC K A G E D IM E N S IO N S in m illim e ters lin ch es 5.2 MAX. RF am p lifie r o f low noise. FE A TU R E S • High to ta l power dissipation. Py : 400 mW)	OCR Scan	JE9016 JE9016 A78G	PDF
TIS43 Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.	OCR Scan	2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent	PDF
metal halide ignitor circuit Abstract: OSRAM ignitor Metal Halide Lamp Ignitor k2200e70 ignitor xenon HQI-T250W 50hz sine oscillator K1050G K2400F1 K1100G Text: D O -2 1 4 A A S u r fa c e M o u n t T O -2 0 2 A B Type 1 T O -9 2 T ype 70 D o n o t u s e m o u n tin g ta b o r c e n te r le a d , e le c t r ic a lly c o n n e c te d SIDAC 95 - 330 Volts General Description T h e S id a c is a s ilic o n b ila te ra l v o lta g e trig g e re d s w itc h w ith	OCR Scan	DO-15X DO-214AA O-202AB DO-15X metal halide ignitor circuit OSRAM ignitor Metal Halide Lamp Ignitor k2200e70 ignitor xenon HQI-T250W 50hz sine oscillator K1050G K2400F1 K1100G	PDF
Untitled Abstract: No abstract text available Text: M S Ic k S í application noií 944-1 ,'-'J • ¿? ' - I-'.Í-.T . ' 1'.• . -,. - r— . . ■- . ■ r i' : , r • " 5 -„v ; : ■ ~ .-, . '7 V _,/ .-. ‘ ¡.V rV ■: >• ■■■ ■. , - Microwave Transistor Bias Considerations iv iin rn iA /a u p ira n s K T n r	OCR Scan	D-7030	PDF
g4 ph 500 transistor Abstract: BLX92A IEC134 362-0 transistor TRANSISTOR C 3619 BLX92 Text: N AMER J^HILIPS/DISCRETE 86D 018 12 ObE D • D T-33-ÒS bbSBTBl O Q m D S Ü J BLX92A U.H.F. PO W E R TRAN SISTO R N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V, The transistor is resistance stabilized and is guaranteed to withstand severe	OCR Scan	BLX92A BLX92A 0014dst g4 ph 500 transistor IEC134 362-0 transistor TRANSISTOR C 3619 BLX92	PDF
A5 GNE mosfet Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA	OCR Scan	1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor	PDF
ip9010 Abstract: PJ 0346 Text: HIP9010 H A R R IS S E M I C O N D U C T O R È Description Features T h e H IP 9010 is used to provide a m ethod of detecting pre m ature de tona tion or “ K nock” in autom otive engines. Tw o S e n s o r Inputs • M ic ro p ro c e s s o r P ro g ram m a b le	OCR Scan	HIP9010 ip9010 PJ 0346	PDF
BR 9014 transistor Abstract: AN-946B FD9014 BR 9014 C TRANSISTOR Pelly high power class d Text: AP P LIC A TIO N NOTE 946B High Voltage, High Frequency Switching Using a Cascode Connection of HEXFET and Bipolar Transistor H E X F E T is t h e t r a d e m a r k t o r I n t e r n a t i o n a l R e c t i f i e r P o w e r M O S F E T s By S. C L E M E N T E , B. PELLY, R. R U T T O N S H A , B. TAYLO R	OCR Scan	25kHz AN-946B BR 9014 transistor AN-946B FD9014 BR 9014 C TRANSISTOR Pelly high power class d	PDF
Untitled Abstract: No abstract text available Text: KSC1394 NPN EPITAXIAL SILICON TRANSISTOR TV V H F TUNER MIXER TO -92 • H igh Current G ain Bandw idth Product Í t700MH z • H igh Pow er G ain G PE=20dB Min at f=200MHz • Low N oise Fihure NF=3.5dB (Max) at f=200MHz ABSOLUTE MAXIMUM RATINGS <TA=	OCR Scan	KSC1394 700MH 200MHz	PDF
transistor IR 840 Abstract: TRANSISTOR RF -PT 4555 BLV193 Philips CT6 power transistor UHF POWER TRANSISTOR MRA553 MRA554 Text: Philips Semiconductors 711005b 0Qb312? 014 IPHIN Product specification BLV193 UHF power transistor PHILIPS INTERN ATI ON AL FEATURES • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. DESCRIPTION	OCR Scan	711005b 0Qb312? BLV193 OT171 PINNING-SOT171 VBA451 transistor IR 840 TRANSISTOR RF -PT 4555 BLV193 Philips CT6 power transistor UHF POWER TRANSISTOR MRA553 MRA554	PDF

TRANSISTOR TE 901 Search Results

TRANSISTOR TE 901 Result Highlights (5)

TRANSISTOR TE 901 Datasheets Context Search

JE9013

2SC950

JE9014

Untitled

2SC4008

NE32584C-T1

Untitled

BLY87A

Transistor 9012 ax

transistor BR 9013

9011 9012 9013 9014 9018

9014 ch

CP1005

Untitled

JE9016

TIS43

metal halide ignitor circuit

Untitled

g4 ph 500 transistor

A5 GNE mosfet

ip9010

BR 9014 transistor

Untitled

transistor IR 840