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    TRANSISTOR TIC 106 N Search Results

    TRANSISTOR TIC 106 N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TIC 106 N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AF106

    Abstract: 40HHZ AF108
    Text: TG~l :-LTTT^- IT- 1-— - 5SC D m 0 2 3 S b Q S G G G H G 4 7 S « S I E G ; PNP Germanium RF Transistor SIEMENS A K T I E N G E S E L L S C H A F T . „ ~ T ' - l f - * ! ' A F 106 D - 04047 for input, mixer, and oscillator stages up to 260 MHz


    OCR Scan     		Q60106-X106 120ms 23SbOS AF106 40HHZ AF108 PDF

    transistor tic 106 N

    Abstract: No abstract text available
    Text: S AMSUNG ELECTRONICS INC 42E MPSA42 D B OQG^ObS 1 E3SMÚK NPN EPITAXIAL SILICON TRANSISTOR s 2r \ - \ s ' HIGH VOLTAGE TRANSISTOR • C o lle c to r-E m ltte r V oltage: VCEo =300V • C o lle c to r D is s ip a tio n : P 0 m a x = 6 2 5 m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		MPSA42 transistor tic 106 N PDF

    vane air flow sensor

    Abstract: alnico alnico 9
    Text: APPLICATIONS INFORMATION THE HALL-EFFECT SENSOR The basic Hall sensor is simply a small sheet of sem iconductor m aterial. A constant voltage source forces a constant bias current to flow in the sem iconductor sheet. The output, a voltage m easured across the width of the sheet, reads near zero if a magnetic field is not


    OCR Scan     		PDF

    TZ 1167

    Abstract: bu208D U/25/20/TN26/15/850/TZ 1167
    Text: MOTOROL A SC XSTRS/R 15E F D I b3b75SM □0ÜM7Tfl 3 | T -3 3 ^ MOTOROLA SEMICONDUCTOR TECHNICAL DATA 5 AM PERES NPN SILICON HORIZONTAL DEFLECTION TRANSISTOR WITH INTEGRATED DAM PER DIO DE NPN SILICON POWER TRANSISTORS . . . specifically designed fo r use in large scree n color d eflection


    OCR Scan     		b3b75SM TZ 1167 bu208D U/25/20/TN26/15/850/TZ 1167 PDF

    3004x

    Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
    Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for


    OCR Scan     		fl23SbOS 0G04737 Q60206-X55 BFX55 23SbOS 150mA 3004x SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107


    OCR Scan     		TIP100/101/102 TIP101 TIP102 TIP100 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3606 Transistor U n it in m m Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Applications -El- F e a tu re s • Low Noise Figure, High Gain • N F = 1 .1 d B , IS21el2 = 1 1 d B f = 1GHz -EE- A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )


    OCR Scan     		2SC3606 IS21el2 PDF

    BLW87

    Abstract: No abstract text available
    Text: Qs.is.s.u £s,mL- -onau.etoi O' , U na. c/ 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLW87 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLW87 is Designed for Class C, 12.5 V High Band Applications


    Original     		BLW87 BLW87 10dBat25W/175MHz PDF

    2N5552

    Abstract: No abstract text available
    Text: -Jfotttron r a t y © ¥ @ Ä ¥ Ä 1L ® LOW TO MEDIUM VOLTAGE, FAST SWITCHING CHIP N U M BER Devices. Inc NPN EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)


    OCR Scan     		203mm) 2N5552. SDT06523, SDT06623 2N5552 PDF

    GP500

    Abstract: ACY33 bnsu germanium af transistors Germanium Transistor transistor ACY PNP
    Text: ACY33 PIMP Transistor fo r A F-driver and pow er stages The ACY 33 is a germanium PNP alloyed transistor in a case 1 A 3 DIN 41871 similar TO —1 . All leads are electrically insulated from the case. The collector terminal is indicated by a red dot on the rim of the case.


    OCR Scan     		ACY33 ACY33 --Y33 Q60103 GP500 bnsu germanium af transistors Germanium Transistor transistor ACY PNP PDF

    transistor NEC D 822 P

    Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters


    OCR Scan     		2SC4226 2SC4226 SC-70 2SC4226-T1 2SC4226-T2 transistor NEC D 822 P transistor number D 2498 702 mini transistor NEC D 822 P PDF

    S12237-02P

    Abstract: No abstract text available
    Text: NEWS 01 2013 ELECTRON TUBE PRODUCTS PAGE 21 From Macro to Micro OPTO-SEMICONDUCTOR PRODUCTS Photo ICs for MOST 150 Optical Link PAGE 16 ELECTRON TUBE PRODUCTS Compact 2 W Xenon Flash Lamp Modules PAGE 25 SYSTEMS PRODUCTS Digital Camera ORCA-Flash4.0 PAGE 36


    Original     		PDF

    EM- 546 motor

    Abstract: 2N6545 2N6545 Motorola 2N6544
    Text: MOTOROLA SC XSTRS/R F 12E D | b3b72S4 QQflMbbt Ö | T - S 3 - /3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta , S lie e t 8 AM PERE NPN SILICON POWER TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The 2N6545 transistor is designed for high-voltage, high-speed,


    OCR Scan     		b3b72S4 2N6545 EM- 546 motor 2N6545 Motorola 2N6544 PDF

    TI3028

    Abstract: TI3027 TI-3027 TI-3028 TI3028 transistor T13027 T-13027 Germanium Transistor Texas Germanium Germanium power
    Text: TYPES TI3027, TI3028 P-N-P ALLOY-JUNCTION GERMANIUM POWER TRANSISTORS 30 CD H m c< HIGH-POWER TRANSISTORS < i" 2 «m » for CONSUMER APPLICATIONS ££S so d <o«og 0 00 m echanical d a ta These transistors a re in a resistan ce -w elded , h e rm e tic a lly se a le d enclosure. The m ou n tin g b a se pro vid es


    OCR Scan     		TI3027, TI3028 I3027 TI3028. TI3027 TI-3027 TI-3028 TI3028 transistor T13027 T-13027 Germanium Transistor Texas Germanium Germanium power PDF

    Untitled

    Abstract: No abstract text available
    Text: 6427525 N E C N E C ELECTRONICS INC 98D ELECTRONICS INC 1 fìfìfì7 n t.427S25 ODlflflflV 4 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK704 D E SC R IPTIO N The 2SK704 is N-Channel MOS Field Effect Power Transistor PACAKGE D IM EN SIO N S designed for solenoid, motor and lamp driver.


    OCR Scan     		427S25 2SK704 2SK704 T-39-11 10-Dram PDF

    H331 transistor

    Abstract: fj series capacitor panasonic 980630 ECU-V1H102KBN transistor h331 RF2125 RF2127 RF2127PCBA W0010 ECUV1H102KBN
    Text: RFEÜ RF2127 MICRO-DEVICES M E D IU M POW ER L IN E A R A M P L IF IE R T y p ic a l A p p lic a t io n s • Commercial and Consumer Systems • PCS Communication Systems • Portable Battery Powered Equipment 2 POWER AMPLIFIERS • DECT Cordless Applications


    OCR Scan     		RF2127 RF2127 1800M 1900M ECU-V1H102KBN ECU-V1H331JCG ECU-V1H220JCN ECS-H1CY105R 100A160JP150X 100A6R2CP150X H331 transistor fj series capacitor panasonic 980630 transistor h331 RF2125 RF2127PCBA W0010 ECUV1H102KBN PDF

    nec 2571

    Abstract: NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz
    Text: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0 .3 p F T Y P .


    OCR Scan     		2SC4957 2SC4957-T1 4957-T2 2SC4957) nec 2571 NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz PDF

    2SC5012-T1

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •


    OCR Scan     		2SC5012 2SC5012-T1 2SC5012-T2 2SC5012-T1 PDF

    lg smd transistor LF

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor In a plastic envelope suitable for surface mounting using ’trench’ technology.


    OCR Scan     		BUK9621-30 SQT404 lg smd transistor LF PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Sem iconductors b b 5 3 ^ 3 1 DDE6TES 756 APX Product specification BLV13 VHF power transistor M AUER PHILIPS/DISCRETE QUICK REFERENCE DATA RF performance at T ^ = 25 °C in a common emitter test circuit. FEATURES • Gold metallization ensures excellent reliability.


    OCR Scan     		BLV13 bbS3131 MCD211 PDF

    CHIP DIODE m7

    Abstract: D2-1N4148 variable capacitor 0.4 motorola 1N4148 1N4148 TP3012 motorola rf Power Transistor 21180 chip trimmer capacitor 1.7 capacitor 10 nf
    Text: MOTOROLA SC XSTRS/R F 4bE b3b7254 » 0 Q1 S 2Ü 1 fi I MOTb "P 3 3 -Û 7 ' MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3012 The RF Line U H F P o w e r T ra n s is to r T he TP3012 is d e sig n e d fo r 900 M H z m o b ile s ta tio n s in both a n a lo g a n d d ig ita l a p p li­


    OCR Scan     		b3b72S4 TP3012 Contin48 T-33-07 CHIP DIODE m7 D2-1N4148 variable capacitor 0.4 motorola 1N4148 1N4148 TP3012 motorola rf Power Transistor 21180 chip trimmer capacitor 1.7 capacitor 10 nf PDF

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK INC EOE D AVANTEK • lim u h AT-60510 Up to 6 GHz Low Noise . Silicon Bipolar Transistor • Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 dB typical at 4.0 GHz High Associated Gain: 12.0 dB typical at 2.0 GHz 7.5 dB typical at 4.0 GHz


    OCR Scan     		AT-60510 PDF

    2SJ357

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ357 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH Package D raw ings unit: m m T h e 2S J 3 5 7 is a P -ch an n el ve rtica l M O S FET th a t can be used as a sw itc h in g e le m e n t. T h e 2S J 3 5 7 can be d ire c tly d rive n by an 1C o p e ra tin g at 5 V.


    OCR Scan     		2SJ357 2SJ357 PDF

    panasonic ZNR

    Abstract: znr k 330 varistor ZV10D270 znr varistor y PO150 panasonic varistor ERZV 4556C
    Text: _ . “ZNR ” Transient/Surge Absorbers, “Series V” Type D Panasonic “ZNR®” Transient/Surge Absorbers (Low Voltage Rating) S e rie s :V Type: D ft “ZNR®” T ransient/S urge A b so rb e r, Series V is newly released through our co ntinued research In ce ram ic


    OCR Scan     		ZV07V180CS ZV07V220CS ZV07V270CS ZV07V330CS ZV07V390CS ZV07V470CS ZV07V560CS ZV07V680CS ERZV10V180CS ERZV10V220CS panasonic ZNR znr k 330 varistor ZV10D270 znr varistor y PO150 panasonic varistor ERZV 4556C PDF