Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR TL 16 Search Results

    TRANSISTOR TL 16 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TL 16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LM308 Op Amp IC

    Abstract: ic lm741 national semiconductor LB-22 balancing resistors IC lm741 ic LM725 LM741 equivalent C1995 LM121 LM308
    Text: C1995 National Semiconductor Corporation TL H 8728 results ensure that the gain fixing resistors are of the same material or have tracking temperature coefficients It is appropriate to mention offset balancing as this can have a large effect on drift Theoretically the drift of a transistor


    Original     		PDF C1995 LM121 LM725 LM308 Op Amp IC ic lm741 national semiconductor LB-22 balancing resistors IC lm741 ic LM741 equivalent LM308

    transistor tl 187

    Abstract: TL 187 360-2002 TL 187 TRANSISTOR TRANSISTOR 187 TRANSISTOR 187 datasheet Series TL
    Text: Series TL Ultraminiature «TO 5 transistor size» magnetic latching relays 28 V / 1 A APPLICATION SPECIFICATIONS MIL-R-39016/12 -/29 -/30 ESCC 3602-002 „ General characteristics N° of pole 2 Pdt 0,4 cm 3 Volume Mass 2 g with leads 38 mm[1.500] lenght 1,6 g with leads 4,75 mm[.187] lenght


    Original     		PDF MIL-R-39016/12 transistor tl 187 TL 187 360-2002 TL 187 TRANSISTOR TRANSISTOR 187 TRANSISTOR 187 datasheet Series TL

    Scans-048

    Abstract: DSAGER000249 schaltungen
    Text: ALLGEMEINE HINWEISE ZU DEN TTL-SERIEN 49/54/74 T TL-IC 's sind integrierte Schaltkreise der Digital­ technik. Die Schaltfunktionen werden durch direkte K opp­ lung in Transistor-Transistor-Logik erreicht. Die Gruppenbezeichnung 54 . . . und 74 . . . kenn­


    OCR Scan     		PDF 54er-Serie 74er-Serie 49er-Serie 74erSerie. Scans-048 DSAGER000249 schaltungen

    Untitled

    Abstract: No abstract text available
    Text: lONBSr KS62121KHB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H iQ tl-B G t3 Single Darlington Transistor Module 1000 Amperes/1200 Volts Description: Powerex High-Beta Single Darlington Transistor Modules are designed for switching applica­


    OCR Scan     		PDF KS62121KHB Amperes/1200 72T4b21 KD62121KHB peres/1200 72T4b

    Untitled

    Abstract: No abstract text available
    Text: m NBΠX KD324515HB Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H iQ tl- B G t3 Dual Darlington Transistor Module 150 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex High-Beta Dual Darlington Transistor Modules are


    OCR Scan     		PDF KD324515HB Amperes/600

    CSA1012

    Abstract: CSC2562 ic 356 transistor CSA1012
    Text: CSA1012, CSC2562 CSA1012 PNP PLASTIC POWER TRANSISTOR CSC2562 NPN PLASTIC POWER TRANSISTOR High Current Switching Applications i— i * r: * .4 IP U = ,C . e , •il t * j DJ g 1 tl DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4,83 0.90 1.15 1.40 3,75


    OCR Scan     		PDF CSA1012, CSC2562 CSA1012 CSC2562 ic 356 transistor CSA1012

    LB 124 transistor

    Abstract: LB 124 d MPQ6427 transistor BC 236 16-SOIC 2N6427 MMBT6427
    Text: 2N6427/MMBT6427/MPQ6427 NATL SEMICOND OISCRETE 11E: D | k 501130 T-33-21 5 ^ N a tio n a l J l A S e m ic o n d u c to r 2N6427 E llllll Ull MMBT6427 MPQ6427* TO “ 236 S O T - 23 T O -9 2 ^ | C =E 10-116 TL/G/10100-7 TL/Q/10100-5 Bc TUG/10100-1 NPN Darlington Transistor


    OCR Scan     		PDF bSD1130 00372b0 T-33-21 2N6427 MMBT6427 MPQ6427* to-236 sot-23) TL/G/10100-7 TL/Q/10100-5 LB 124 transistor LB 124 d MPQ6427 transistor BC 236 16-SOIC

    BF324

    Abstract: oms 450 Q62702-F311 S420
    Text: 25C » • ô53SbQS GGQ4H73 0 WÊZIZG [; PNP Silicon RF Transistor SIEMENS AKTIENÛESELLSCHAF '3 T -ïl-tl BF 324 D.- fo r large-signal V H F stag es BF 3 2 4 is an epitaxial PNP silicon planar transistor in TO 9 2 plastic package TO A 3


    OCR Scan     		PDF Q62702-F311 140mS BF324 oms 450 Q62702-F311 S420

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 158W PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit « Built in bias resistor R1=2.2ki2, R2=47kfl Ordering Code Pin Configuration WIs UPON INQUIRY 1= B Package 2= E o tl Marking BCR 158W CO Type


    OCR Scan     		PDF 47kfl) OT-323 235b05 BCR158W a53SbOS D1BD77B fiS35bD5

    Untitled

    Abstract: No abstract text available
    Text: DI9405 SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SO-8 llll iE m "'ELT; tiu u u u TL A P ÏT -M


    OCR Scan     		PDF DI9405 DS11504

    SOT-90B

    Abstract: No abstract text available
    Text: SL5500 SL5501 SL5511 y v OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn photo­ transistor with accessible base. Plastic envelopes. Suitable fo r T TL integrated circuits. Features • High output/input DC current transfer ratio


    OCR Scan     		PDF SL5500 SL5501 SL5511 bbS3T31 00355b? SOT-90B

    MARKING toshiba TLP621-4

    Abstract: TLP621 11-5B2 E67349 TLP621-2 TLP621-4 ul standards for relay
    Text: T O S H IB A TLP621 ,TLP621-2,TLP621 -4 TOSHIBA PHOTOCOUPLER TL P 621, T L P GaAs IRED & PHOTO-TRANSISTOR 6 2 1 -2 , T L P 6 2 1 -4 PRO GRAM M ABLE CONTROLLER AC /D C -IN PU T MODULE SOLID STATE RELAY The TOSHIBA TLP621, -2, and -4 consists of a photo-transistor


    OCR Scan     		PDF TLP621 TLP621-2 TLP621 TLP621, TLP621-2, TLP621-4 TLP621-4 MARKING toshiba TLP621-4 11-5B2 E67349 ul standards for relay

    k106 transistor

    Abstract: BUK106-50L BUK106-50S bu 11 apx buk106
    Text: N AMER PH ILIPS/ DIS CRETE bTE D • ^53=131 □ □ 3 0 4 E tl 4bT « A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic


    OCR Scan     		PDF 304Etl BUK106-50L7S BUK106-50LP/SP BUK106-50L/S k106 transistor BUK106-50L BUK106-50S bu 11 apx buk106

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA OISCRETE/OPTOJ 9097250 TOSHIBA TT D I S C R E TE/OPTO dF | T D T V a S D DülbflEO S 1 ~ 99D 16820 D~p-39-i3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 4 5 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA ( Tl-MOS E) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.


    OCR Scan     		PDF p-39-i3 100nA 250uA 250yA SYM30L 00A/us

    Untitled

    Abstract: No abstract text available
    Text: DI9942 DUAL N & P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features High Cell Density DMOS Technology Low O n-S tate Resistance High Pow er and C urrent C apability Fast Sw itching Speed High T ransient Tolerance SO-8 llll R-CHANNEL tpTffl ,6 TL uuu A


    OCR Scan     		PDF DI9942 DS11510

    NPN transistor SST 117

    Abstract: No abstract text available
    Text: Philips Sem iconductors ^ b b 5 3 ^31 0 Q 3 1 cI b tl 5M 7 M APX Product specification NPN 9 GHz wideband transistor ^ ^ FEATURES ^ BFR540 • N AMER PHILIPS/DISCRETE bTE D PINNING PIN DESCRIPTION • High power gain • Low noise figure • High transition frequency


    OCR Scan     		PDF BFR540 BFR540 NPN transistor SST 117

    TOSHIBA 1N DIODE

    Abstract: No abstract text available
    Text: TOSHIBA {DI SC RE TE/ OPTO } "H 9097250 TOSHIBA DISCRETE/OPTO ¿ / o ìh ìh tt DE I T Q T T S S O QOlbñQO O I~~ 99D 16800 TOSHIBA F IE L D SEMICONDUCTOR DT-39-13 E FFE C T TRANSISTOR Ï T F - 2 4 2 SIL IC O N TECHNICAL DATA N CHANNEL MOS-TYPE ( Tl-MOS


    OCR Scan     		PDF DT-39-13 100nA 250uA 00A/us TOSHIBA 1N DIODE

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TLP2530,TLP2531 TOSHIBA PHOTOCOUPLER Tl • V V ^M T GaA£As IRED & PHOTO IC TM l P 3 5 3 1 g V M T ■ DEGITAL LOGIC ISOLATION U nit in mm LINE RECEIVER POWER SUPPLY CONTROL SWITCHING POWER SUPPLY TRANSISTOR INVERTER The TOSHIBA TLP2530 and TLP2531 dual photocouplers consist of a


    OCR Scan     		PDF TLP2530 TLP2531 TLP2531 11-10C4 TLP2530JLP2531 25inA

    transistor B A O 331

    Abstract: mje340 equivalent d 331 TRANSISTOR equivalent
    Text: ¡S A M S U N G S E M IC O N D U C T O R I N C MJE340 14E 0 J | 7cl b tl l i f S 000770D fl NPN EPITAXIAL SILICON TRANSISTOR HIGH COLLECTOR-EMITT&R SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMER Complementary to MJE350


    OCR Scan     		PDF MJE340 MJE350 0QG77fe transistor B A O 331 mje340 equivalent d 331 TRANSISTOR equivalent

    IRFP350

    Abstract: IRFP350FI Transistor IRFP350 THOMSON
    Text: 7^237 *57 0QMS73T TS? SGTH SGS-mOMSON IRFP350 IRFP350FI R Æ O œ o & tlû ïïm r e S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IR F P 3 5 0 IR F P 3 5 0 F I V dss 40 0 V 40 0 V R dS oii Id < 0 .3 £2 < 0 .3 a 16 A 10 A TYPICAL FtDS(on) = 0.21 £2


    OCR Scan     		PDF T5T237 0QMS73T IRFP350 IRFP350FI IRFP350 IRFP350/FI IRFP350FI Transistor IRFP350 THOMSON

    NR461

    Abstract: No abstract text available
    Text: NATL S E M 1 -ON] {DISCRETE} 65 0 î 130 N A TL S E M I C O N D , z Z z (DISCRETE) DD3Sti]i7 28C 3 5 6 1 7 National Semiconductor Q . <£> s i fiC 2flC D | b S D H B D T '- 'Z / ' z NR461ÌNPN) low-noise RF/IF transistor features IT I package and lead coding


    OCR Scan     		PDF NR461 800KHz 10KHz: 100/ZV/M 280/A//M 15KHz

    uPA609T

    Abstract: MPA609T AAHC IC-8847 PA609T transistor a935 lm 7914 1S955 cb-40 nec I-7520
    Text: ï r — •£? • — h NEC V U = 1 > Silicon Transistor iuPA609T N P N / P N P X =*■ v MPA609T « DC/DC =1> /S'- £ V =1 > h 7 > '/ X ^ H im ? ft -5/* 9 - MOS W iS . : mm FET W -if— S 7)7'U K 7 < ^ Ì C f t ì S 4 ' S :?-:& = l> 7 ,' i; ^ > * U - ? 2 * i r tl*


    OCR Scan     		PDF uPA609T MPA609T IEl-620) MPA609T AAHC IC-8847 PA609T transistor a935 lm 7914 1S955 cb-40 nec I-7520

    TC-7808

    Abstract: ic 7808 D1558 NEC 7808 7808 ct 2190 ctv mtu 1622 A15E 2SA1840 uc 3212
    Text: 7" $ • y — h> > h > / \ ° 7 - Darlington Power Transistor 2SA1840 U> h y ^0? - h 5 > y X n t o OA, FA 2SA1840 i, £ fc , V ^ f — t l >• 7 'j y S -y y - 9 , l | 3 X t ' ^ -T o ft $ 0 7 y T ^ f -b ° > ? "tt# T ' g tL o f f t J jg f g li S '^ y o C


    OCR Scan     		PDF 2SA1840 TC-7808 ic 7808 D1558 NEC 7808 7808 ct 2190 ctv mtu 1622 A15E 2SA1840 uc 3212

    Untitled

    Abstract: No abstract text available
    Text: A L L E GR O M I C R O S Y S T E M S 8514019 SPRAGUE. INC T3 D • 0 5 0 4 3 3 Ô 0 0 0 3 5 b 0 b ■ AL6R SEMICONDS / ICS 'T 'Z tl 0 93D 03 560J> V BIPOLAR TRANSISTOR CHIPS t ii NPN Transistors ‘TH ’ Device Types E LE CT R ICAL CH ARACTERISTICS at Tfl = 25°C


    OCR Scan     		PDF THC3414 THC3415 THC3416 THC3417 THC3444 THC3498 THC3499 THC3500 THC3501 THC3563