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    TRANSISTOR TL 431 G Search Results

    TRANSISTOR TL 431 G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TL 431 G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    S 170 MOSFET TRANSISTOR

    Abstract: transistor w 431 PDF Datasheets CMT20N50 CMT20N50N3P td 6950
    Text: CMT20N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ! Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ! Avalanche Energy Specified without degrading performance over time. In addition, this


    Original     		CMT20N50 S 170 MOSFET TRANSISTOR transistor w 431 PDF Datasheets CMT20N50 CMT20N50N3P td 6950 PDF

    schematic diagram reverse forward motor

    Abstract: transpac
    Text: / S O^DMitLKgirMDgi T S G S -T H O M S O N SGS150MA01OD1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE V DSS R DS on SGS150MA010D1 100 V 0.009 Si • • • • • 150 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING EASY DRIVE EASY TO PARALLEL


    OCR Scan     		SGS150MA01OD1 SGS150MA010D1 schematic diagram reverse forward motor transpac PDF

    TRANSISTOR TL 431

    Abstract: CMT20N50 CMT20N50N3P
    Text: CMT20N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ! Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ! Avalanche Energy Specified without degrading performance over time. In addition, this


    Original     		CMT20N50 TRANSISTOR TL 431 CMT20N50 CMT20N50N3P PDF

    D44h7

    Abstract: D44H12
    Text: 3875081 G E SOLID _ STATE- DI n 1C 1 QHAf i DE 1 3 ñ 7 S D ñ l □□nDñfe, h i " D44H Series NPN POWER TRANSISTORS 30 -8 0 VOLTS 10 AMP, 50 WATTS >COMPLEMENTARY TO THE D45H SERIES The General Electric D44H is a power transistor designed for various specific and general purpose applications, such as:


    OCR Scan     		300ms D44h7 D44H12 PDF

    S100 transistor

    Abstract: BUK455-200A BUK455-200B S100 T0220AB transistor smps circuit TRANSISTOR BO 345 db40ci0 PHILIPS S100
    Text: PHILIPS INTERNATIONAL bSE D B 711002b ÜObMQÔb bbT • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		711002h BUK455-200A/B T0220AB buk455 -200a -200b Ti/C-150 -ID/100 S100 transistor BUK455-200A BUK455-200B S100 transistor smps circuit TRANSISTOR BO 345 db40ci0 PHILIPS S100 PDF

    LM7915CK

    Abstract: LM7905CK LM7912CK LM79XX lm7905ct LM7908CT LM7905 to3 LM7915CK to3
    Text: LM79XX SflE D • b 5 D 1 1 2 M 007b4fl4 72T M N S C B SHNational mm Semiconductor NATL S E M I C O N D LINEAR T -5 8 -1 1 - (3 LM79XX Series 3-Terminal Negative Regulators General Description The LM79XX series of 3-terminal regulators is available with


    OCR Scan     		007b4fl4 LM79XX LM79XX T0-220 TL/H/7340-12 b5D112M TL/H/7340-13 LM7915CK LM7905CK LM7912CK lm7905ct LM7908CT LM7905 to3 LM7915CK to3 PDF

    BUK452-50A

    Abstract: BUK452-50B T0220AB
    Text: N AMER PHI LIP S/ DI SCRETE btS3*131 002DM3Ü 4 2SE D BUK452-50A BUK452-50B PowerMOS transistor T - 37-1/ GENERAL DESCRIPTION N-channel enhancement mode fiefd-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		002D43G BUK452-50A BUK452-50B BUK452 ID/100 T0220AB PDF

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface PDF

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount PDF

    BUV18

    Abstract: transistor buv 90 BUV19 transistor buv BUV18-BUV19
    Text: •_?52T237 QD2Ô>71J? 'T '3 'S - I S SGS -THOMSON S G S-THOMSON BUV18 BUV19 3QE » NPN HIGH CURRENT SWITCHING TRANSISTORS HIGH EFFICIENCY SWITCHING VERY LOW SATURATION VOLTAGE AT 40A FAST TURN-OFF AND TURN-ON DESC RIPTIO N High current, high speed transistors suited for low


    OCR Scan     		T-33-IS BUV18 BUV19 lr-/ln-10 18-BUV transistor buv 90 BUV19 transistor buv BUV18-BUV19 PDF

    BUZ41A

    Abstract: No abstract text available
    Text: SILICONIX INC 1ÖE » • Ô2S473S O G m b Q T Ö BUZ41A fsr Siliconix in c o r p o r a t e d N-Channel Enhancement Mode Transistor TO-220AB TOP VIEW ~Ô~ PRODUCT SUMMARY V BR|DSS 'W 500 1.5 •d (A 4.5 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)


    OCR Scan     		2S473S BUZ41A O-220AB ES473S GG14t. T-39-11 BUZ41A PDF

    TRANSISTOR bH-16

    Abstract: BH-16 marking TRANSISTOR bH-10 bh16 transistor marking code 431 marking BH-10 bcp56-16t1g marking BH SOT-223 431 marking code sot BH-16 transistor
    Text: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.


    Original     		BCP56T1 OT-223 inch/1000 BCP56T3 inch/4000 100mA 250mA 500mA TRANSISTOR bH-16 BH-16 marking TRANSISTOR bH-10 bh16 transistor marking code 431 marking BH-10 bcp56-16t1g marking BH SOT-223 431 marking code sot BH-16 transistor PDF

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360 PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF

    D 8243 HC

    Abstract: 9243 25CC D24D LH4003 LH4003C LH4003CD LH4003D z351
    Text: LH4003/LH4003C PRELIMINARY ÉSà CT1 National Semiconductor LH4003/LH4003C Precision RF Closed Loop Buffer General Description Features The LH4003 is a precision RF buffer optimized for unity gain applications. The LH4003 features a small signal bandwidth


    OCR Scan     		LH4003/LH4003C LH4003 TL/K/9243-3 TL/K/9243-4 TL/K/9243-6 TL/K/9243-7 TL/K/9243-8 TL/K/9243- D 8243 HC 9243 25CC D24D LH4003C LH4003CD LH4003D z351 PDF

    SMD Transistor 431 ac

    Abstract: No abstract text available
    Text: SH National Æm Semiconductor 54AC/74AC14 Hex Inverter with Schmitt Trigger Input General Description The ’AC14 contains six inverter gates each with a Schmitt trigger input. The ’AC14 contains six logic inverters which accept standard CMOS input signals and provide standard


    OCR Scan     		54AC/74AC14 SMD Transistor 431 ac PDF

    12v transformer

    Abstract: No abstract text available
    Text: f f i H a r r is U U S E M I C O N D U C T O R FRF150D, FRF150R, FRF150H 25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 25A, 100V, RDS on = 0.07Q TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		FRF150D, FRF150R, FRF150H O-254AA 100KRAD 300KRAD 1000KRAD 3000KRAD FRI50UIS 12v transformer PDF

    B2431-1

    Abstract: 9243
    Text: LH4003/LH4003C National Semiconductor PRELIMINARY LH4003/LH4003C Precision RF Closed Loop Buffer General Description Features The LH4003 is a precision RF buffer optimized for unity gain applications. The LH4003 features a small signal bandwidth of 250 MHz. The buffer is internally compensated to be unity


    OCR Scan     		LH4003/LH4003C LH4003 tl/k/9243-4 TL/K/9243-7 B2431-1 9243 PDF

    transistor TL 431 g

    Abstract: S 170 MOSFET TRANSISTOR transistor 667 7A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTY20N50E TMOS E-FET ™ Power Field Effect Transistor Motorola Praterrad Devfce N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 20 AMPERES 500 VOLTS RDS<on 3 0-26 OHM This high voltage MOSFET uses an advanced termination


    OCR Scan     		MTY20N50E 0E-05 transistor TL 431 g S 170 MOSFET TRANSISTOR transistor 667 7A PDF

    transistor tic 106 N

    Abstract: bly power transistor transistor tic 226 transistor SE 431
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA D e sig n e r’s Data Sheet M GW 1 2 N 1 2 0 D Insulated G ate Bipolar Transistor with Anti-Parallel Diode Motorola Prafarrad Davlca N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN TO -247 12 A @ 90 C 20 A @ 25 C


    OCR Scan     		PDF

    transistor c 6073

    Abstract: TRANSISTOR 431p transistor c 6073 circuit diagram ptc 820 TF PTC PTC886 6063 T0 ptc 205 ptc 500 ptc b
    Text: MICROSEMI CORP/POWER ÖSD D • bllSTSG 00003b2 2 NPN Darlington Transistors TO-2Q4MA TO ' 3 Part Number Ic Amps PTC 10002 PTC 10003 PTC 10006 PTC 10007 PTC 6251 PTC 6252 PTC 6253 PTC 6000 PTC 6001 PTC 6002 PTC 6003 PTC 10000 PTC 10001 PTC 10004 PTC 10005


    OCR Scan     		00003b2 TQ-204MA PTC102 transistor c 6073 TRANSISTOR 431p transistor c 6073 circuit diagram ptc 820 TF PTC PTC886 6063 T0 ptc 205 ptc 500 ptc b PDF

    AN569

    Abstract: MTW20N50E
    Text: MOTOROLA Order this document by MTW20N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination


    Original     		MTW20N50E/D O-247 AN569 MTW20N50E PDF

    LM431C1M3

    Abstract: 1115 r1b TL 431 SO8 diode N1E 2SD 2495 Equivalent WV SOT23-3 2B2 zener diode 1B5 zener diode 2SD 2495 TI 81W
    Text: LM431 Adjustable Precision Zener Shunt Regulator General Description Features The LM431 is a 3-terminal adjustable shunt regulator with guaranteed temperature stability over the entire tem pera­ ture range of operation. The output voltage may be set at any level greater than 2.5V VREF up to 36V merely by


    OCR Scan     		LM431 LM431 01Db047 LM431C1M3 1115 r1b TL 431 SO8 diode N1E 2SD 2495 Equivalent WV SOT23-3 2B2 zener diode 1B5 zener diode 2SD 2495 TI 81W PDF

    A-254168-2

    Abstract: transistor 2490 zener Ic tl 431 core arnold 1 - 254168-2 LM136-2.5
    Text: a t i o n a l S e m i c o n d u c t o r LM136-2.5/LM236-2.5/LM336-2.5V Reference Diode General Description The LM136-2.5/LM236-2.5 and LM336-2.5 integrated cir­ cuits are precision 2.5V shunt regulator diodes. These monolithic IC voltage references operate as a low-tempera­


    OCR Scan     		5/LM236-2 5/LM336-2 LM136-2 LM336-2 A-254168-2 transistor 2490 zener Ic tl 431 core arnold 1 - 254168-2 LM136-2.5 PDF