C67078-S1306-A3
Abstract: 60f5
Text: BUZ 41 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 41 A 500 V 4.5 A 1.5 Ω TO-220 AB C67078-S1306-A3 Maximum Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1306-A3
C67078-S1306-A3
60f5
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BUZ41
Abstract: C67078-S1306-A3
Text: BUZ 41 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 41 A 500 V 4.5 A 1.5 Ω TO-220 AB C67078-S1306-A3 Maximum Ratings Parameter Symbol Continuous drain current
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Original
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O-220
C67078-S1306-A3
BUZ41
C67078-S1306-A3
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IFN423
Abstract: IFN421 IFN422 electrometers electrometer
Text: Databook.fxp 1/14/99 12:22 PM Page B-41 B-41 01/99 IFN421, IFN422, IFN423 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Very High Input Impedance Differential Amplifiers ¥ Electrometers Device Dissipation Derate 3.2 mW/°C to 50°C
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IFN421,
IFN422,
IFN423
IFN421
IFN422
IFN423
electrometers
electrometer
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transistor tj 2499
Abstract: C67078-S3121-A2 transistor K D 2499 BUZ345 transistor D 2499 0/transistor tj 2499
Text: BUZ 345 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 345 100 V 41 A 0.045 Ω TO-218 AA C67078-S3121-A2 Maximum Ratings Parameter Symbol Continuous drain current
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Original
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O-218
C67078-S3121-A2
transistor tj 2499
C67078-S3121-A2
transistor K D 2499
BUZ345
transistor D 2499
0/transistor tj 2499
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BUZ345
Abstract: transistor tj 2499 C67078-S3121-A2 BUZ 82 transistor K D 2499 transistor D 2499
Text: BUZ 345 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 345 100 V 41 A 0.045 Ω TO-218 AA C67078-S3121-A2 Maximum Ratings Parameter Symbol Continuous drain current
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Original
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O-218
C67078-S3121-A2
BUZ345
transistor tj 2499
C67078-S3121-A2
BUZ 82
transistor K D 2499
transistor D 2499
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HOA0866-T55
Abstract: HOA087X SDP8406 SEP8506 U.S. Sensor
Text: Datasheet - HOA0866-T55 HOA0866-T55 HOA Series Infrared Transmissive Sensor, Transistor Output, Two Mounting Tabs, Plastic Package Features Representative photograph, actual product appearance may vary. ● ● ● ● ● Due to regional agency approval
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Original
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HOA0866-T55
HOA086X/087X
20and
20Settings/rabab/Desktop/Datasheet
20HOA0866-T55
HOA0866-T55
HOA087X
SDP8406
SEP8506
U.S. Sensor
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PDF
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TRANSISTOR T 927
Abstract: 965 transistor transistor D 4515 transistor t13 transistor b 1655 0280 218 065 ASTM-D-4066 a 933 transistor ASTM-D4066
Text: 1662-2012:QuarkCatalogTempNew 9/14/12 7:45 AM Page 1662 POWER ENCLOSURES INTERCONNECT TEST & MEASUREMENT 20 LED Spacers, Transistor Sockets, Kits and Insulators Transistor Mounting Kits TO-3 Transistor Sockets These pre-packaged universal mounting kits provide all the necessary hardware and insulators required to
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Shoulder66
T-13/4
TRANSISTOR T 927
965 transistor
transistor D 4515
transistor t13
transistor b 1655
0280 218 065
ASTM-D-4066
a 933 transistor
ASTM-D4066
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HOA0862-T55
Abstract: INFRARED TRANSISTOR HOA087X SDP8406 SEP8506 hoa0862
Text: Datasheet - HOA0862-T55 HOA0862-T55 HOA Series Infrared Transmissive Sensor, Transistor Output, Two Mounting Tabs, Plastic Package Features ● Representative photograph, actual product appearance may vary. ● ● ● ● Due to regional agency approval
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HOA0862-T55
HOA086X/087X
HOA0862-T55
INFRARED TRANSISTOR
HOA087X
SDP8406
SEP8506
hoa0862
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PDF
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sy 320 diode
Abstract: No abstract text available
Text: SIEMENS BUZ 41 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 41 A Vbs 500 V b ^DS on Package Ordering Code 4.5 A 1.5 Í2 TO-220 AB C67078-S1306-A3 Maximum Ratings Parameter Symbol Continuous drain current b Values
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OCR Scan
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O-220
C67078-S1306-A3
tempe96
fl23Sb05
0GA41L
sy 320 diode
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 41 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 41 A Vos 500 V fa 4.5 A Abs on 1 .5 ft Package Ordering Code TO-220 AB C67078-S1306-A3 Maximum Ratings Parameter Symbol Values Continuous drain current
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OCR Scan
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O-220
C67078-S1306-A3
00-----------------------V
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PDF
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Transistor BFr 99
Abstract: Transistor BFR 96 TFC 718 S tfc 718 BFR34A Transistor BFR 38 TRANSISTOR 2SC 169 6620 bfr34 2N6620
Text: ÍSIEû ESC D • fl235bDS QQQMb70 2 NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers ^ _ _ BFR34A 2 N 6620 SIEMENS AKTIEN6ESELLSCHAF BFR 34 A is an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 DIN 41 867 intended for use in RF amplifiers up to the GHz range,
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OCR Scan
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fl235bDS
2N6620.
Q62702-F346-S1
Q68000-A4668
fl23Sfc
0004fc
BFR34A
200MHz
Transistor BFr 99
Transistor BFR 96
TFC 718 S
tfc 718
BFR34A
Transistor BFR 38
TRANSISTOR 2SC 169
6620
bfr34
2N6620
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BD 130 NPN transistor
Abstract: transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330
Text: 25C D • 623SbOS 000434b 4 « S I E G _ NPN Silicon Planar Transistor BD 329 -SIEMENS AKTIENGESELLSCHAF 25C 043^6 O-.7 ^ SI - 0 7 BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly
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OCR Scan
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00043Mb
Q62702-D394
329/BD
Q62702-D401
Q62902-B63
100ps
200jiS
BD329
BD 130 NPN transistor
transistor BD 329
transistor BD
Q62702-D401
BD329
JH transistor
Q62702-D394
Q62902-B63
QQQ4347
BD330
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PDF
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Bd 130 NPN transistor
Abstract: 62702-D394 transistor z5
Text: 2SC D • 623SbQS QQQM3Mb M « S I E G NPN Silicon Planar Transistor - 25C BD 329 CK346 0 — 7 r ? i~. ° 7 SIEMENS AKTIENGESELLSCHAF BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly
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OCR Scan
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623SbQS
CK346
329/BD
62702-D394
Q62702-D401
Q62902-B63
0QQ434fl
-T-33
Bd 130 NPN transistor
transistor z5
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transistor BD
Abstract: TRANSISTOR bd 330
Text: 2SC D • fl23SbDS QQQHBMI T M S I E G PNP Silicon Planar Transistor BD 330 _ 25C0 4 3 4 9 D T - 3 1 '/ ? SIEMENS AKTIENGESELLSCHAF BO 330 is an epitaxial PNP silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 329 it is particularly
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OCR Scan
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fl23SbDS
330/BD
Q62702-D395
Q62702-D401
Q62902-B63
235bQS
GQ04351
BD330
transistor BD
TRANSISTOR bd 330
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Transistor BFT 44
Abstract: transistor tt 2078 TRANSISTOR 2SC 458 Transistor B C 458 transistor npn d 2078 B-01 BFT12 Q62702-F390 gp 823 Q0047
Text: 1 - ’ asc D • ö23SbOS G004701 R « S I E G u‘ N PN Silicon RF Broadband Transistor BFT 12 SIEMENS AKTIENfiESELLSCHAF . D — 1 BFT 12 is an epitaxial N PN silicon planar RF transistor in a plastic package similar to TO 1 1 9 50 B 3 DIN 41 867 , intended for universal application in amplifiers up to the
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OCR Scan
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23SbOS
Q004701
Q62702-F390
Transistor BFT 44
transistor tt 2078
TRANSISTOR 2SC 458
Transistor B C 458
transistor npn d 2078
B-01
BFT12
Q62702-F390
gp 823
Q0047
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PDF
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transistor D 2499
Abstract: transistor K D 2499 BUZ 82 BUZ345 transistor 2499
Text: SIEMENS BUZ 345 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 345 Vbs 100 V b 41 A flfasion 0.045 n Package Ordering Code TO-218AA C67078-S3121-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values
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OCR Scan
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O-218AA
C67078-S3121-A2
O-218AA
transistor D 2499
transistor K D 2499
BUZ 82
BUZ345
transistor 2499
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BFS20R
Abstract: IC mark A09 BFS 65 Q62702-F350 Q62702-F589 a10 transistor
Text: 2sc D m aaastas oooMb^s ? « s i e g r NPN Silicon RF Transistor BFS 20 BFS 20 R SIEMENS A K T I E N 6E SE LL SCH AF BFS 20 is an epitaxial NPN silicon planar RF transistor in TO 236 plastic package 23 A 3 DIN 41 869 , intended for use in film circuits. The transistor BFS 20 is marked "NA". It is also available upon request with changed
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OCR Scan
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a23Sb05
Q62702-F350
Q62702-F589
BFS20R
IC mark A09
BFS 65
Q62702-F350
Q62702-F589
a10 transistor
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PDF
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Germanium power
Abstract: pnp germanium transistor AF379
Text: aSC D • 023SbD5 0QQ4QÔS 5 ■ S I E û T- PNP Germanium RF Transistor Of AF 379 - SIEMENS AKTIENGESELLSCHAF -fo r large sig n a l a p p lic a tio n s up to 9 0 0 M H z A F 379 is a PNP germanium planar RF transistor in 5 0 B 3 DIN 41 867 plastic package
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OCR Scan
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023SbD5
2701-F72
TartlbS45
voltage11
Germanium power
pnp germanium transistor
AF379
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PDF
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transistor K D 2499
Abstract: transistor D 2499 S/transistor K D 2499 BUZ 82 transistor 2499 BUZ345
Text: SIEMENS SIPMOS Power Transistor BUZ 345 • N channel • Enhancement mode • Avalanche-rated Type Vos BUZ 345 100 V 41 A ^DS on Package 1> O rdering Code 0.045 £J TO-218 AA C67078-S3121-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 28 'C
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OCR Scan
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O-218
C67078-S3121-A2
transistor K D 2499
transistor D 2499
S/transistor K D 2499
BUZ 82
transistor 2499
BUZ345
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PDF
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2073 transistor
Abstract: BFS20 siemens
Text: 2sc D m aaastas oooMb^s ? « s i e g r NPN Silicon RF Transistor BFS 20 BFS 20 R SIEMENS A K T I EN 6 ES EL LSC HA F B F S 2 0 is an epitaxial N P N silicon planar R F transistor in TO 2 3 6 plastic package 2 3 A 3 D IN 41 869 , intended for use in film circuits.
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OCR Scan
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PDF
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transistor K D 2499
Abstract: No abstract text available
Text: BUZ 345 I nf ineon technologies SIPMOS Power Transistor • N channel £ • Enhancement mode • Avalanche-rated VPT05I56 3 Pin 2 Pin 1 G Type BUZ 345 Vbs b 100 V 41 A f iDS on 0.045 n Pin 3 S D Package Ordering Code TO-218 AA C67078-S3121-A2 Maximum Ratings
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OCR Scan
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VPT05I56
O-218
C67078-S3121-A2
S35bG5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
transistor K D 2499
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PDF
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A1306A
Abstract: buz41
Text: SIEMENS SIPMOS Power MOS Transistor VDS /D ^ D S o n • BUZ 41A = 500 V = 4.5 A = 1-5 Q N channel • E nhancem ent mode • A valanche-proof • Package: TO -220 A B 1) Type Ordering code BUZ 41 A C 6 7078-A 1306-A 3 Maximum Ratings Parameter Symbol
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OCR Scan
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078-A
306-A
SIL00340
SiL00342
A1306A
buz41
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PDF
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BFW92
Abstract: TRANSISTOR BFW 11 SQP5 2N6621 349 2110 Q62702-F321 Q68000-A4669 QQG4733 6621 transistor bfw 90
Text: BSC D • Û235b05 0004731 7 « S I E G NPN Silicon RF Broadband Transistors T c rc\ t -» - SIEMENS AKTIENÛESELLSCHAF T - H 't r BFW 92 2 N 6621 BFW 9 2 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 DIN 41 86 7 ; intended for use as RF amplifier up to the GHz range,
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OCR Scan
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6535bQ5
2N6621.
Q62702-F321
Q68000-A4669
temperatu077
QQG4733
BFW92
BFW92
TRANSISTOR BFW 11
SQP5
2N6621
349 2110
Q68000-A4669
6621
transistor bfw 90
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PDF
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Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC 30E D • t457SaS ODEiSíl a ■ T -41 - L i f P H O T O T R A N S IS T O R PHI 03 DARLING TO N PHOTO T R A N S IS T O R The PH 103 is a darlington photo transistor in a plastic molded package, PA C K A G E D IM E N SIO N S and very suitable for a detector of a photo interrupter.
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OCR Scan
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t457SaS
b427S25
T-41-63
PH103
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