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    TRANSISTOR TO 41 PACKAGE Search Results

    TRANSISTOR TO 41 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH8R316MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -90 A, 0.0064 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH3R10AQM Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 120 A, 0.0031 Ω@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TO 41 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C67078-S1306-A3

    Abstract: 60f5
    Text: BUZ 41 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 41 A 500 V 4.5 A 1.5 Ω TO-220 AB C67078-S1306-A3 Maximum Ratings Parameter Symbol Continuous drain current


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    O-220 C67078-S1306-A3 C67078-S1306-A3 60f5 PDF

    BUZ41

    Abstract: C67078-S1306-A3
    Text: BUZ 41 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 41 A 500 V 4.5 A 1.5 Ω TO-220 AB C67078-S1306-A3 Maximum Ratings Parameter Symbol Continuous drain current


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    O-220 C67078-S1306-A3 BUZ41 C67078-S1306-A3 PDF

    IFN423

    Abstract: IFN421 IFN422 electrometers electrometer
    Text: Databook.fxp 1/14/99 12:22 PM Page B-41 B-41 01/99 IFN421, IFN422, IFN423 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Very High Input Impedance Differential Amplifiers ¥ Electrometers Device Dissipation Derate 3.2 mW/°C to 50°C


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    IFN421, IFN422, IFN423 IFN421 IFN422 IFN423 electrometers electrometer PDF

    transistor tj 2499

    Abstract: C67078-S3121-A2 transistor K D 2499 BUZ345 transistor D 2499 0/transistor tj 2499
    Text: BUZ 345 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 345 100 V 41 A 0.045 Ω TO-218 AA C67078-S3121-A2 Maximum Ratings Parameter Symbol Continuous drain current


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    O-218 C67078-S3121-A2 transistor tj 2499 C67078-S3121-A2 transistor K D 2499 BUZ345 transistor D 2499 0/transistor tj 2499 PDF

    BUZ345

    Abstract: transistor tj 2499 C67078-S3121-A2 BUZ 82 transistor K D 2499 transistor D 2499
    Text: BUZ 345 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 345 100 V 41 A 0.045 Ω TO-218 AA C67078-S3121-A2 Maximum Ratings Parameter Symbol Continuous drain current


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    O-218 C67078-S3121-A2 BUZ345 transistor tj 2499 C67078-S3121-A2 BUZ 82 transistor K D 2499 transistor D 2499 PDF

    HOA0866-T55

    Abstract: HOA087X SDP8406 SEP8506 U.S. Sensor
    Text: Datasheet - HOA0866-T55 HOA0866-T55 HOA Series Infrared Transmissive Sensor, Transistor Output, Two Mounting Tabs, Plastic Package Features Representative photograph, actual product appearance may vary. ● ● ● ● ● Due to regional agency approval


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    HOA0866-T55 HOA086X/087X 20and 20Settings/rabab/Desktop/Datasheet 20HOA0866-T55 HOA0866-T55 HOA087X SDP8406 SEP8506 U.S. Sensor PDF

    TRANSISTOR T 927

    Abstract: 965 transistor transistor D 4515 transistor t13 transistor b 1655 0280 218 065 ASTM-D-4066 a 933 transistor ASTM-D4066
    Text: 1662-2012:QuarkCatalogTempNew 9/14/12 7:45 AM Page 1662 POWER ENCLOSURES INTERCONNECT TEST & MEASUREMENT 20 LED Spacers, Transistor Sockets, Kits and Insulators Transistor Mounting Kits TO-3 Transistor Sockets These pre-packaged universal mounting kits provide all the necessary hardware and insulators required to


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    Shoulder66 T-13/4 TRANSISTOR T 927 965 transistor transistor D 4515 transistor t13 transistor b 1655 0280 218 065 ASTM-D-4066 a 933 transistor ASTM-D4066 PDF

    HOA0862-T55

    Abstract: INFRARED TRANSISTOR HOA087X SDP8406 SEP8506 hoa0862
    Text: Datasheet - HOA0862-T55 HOA0862-T55 HOA Series Infrared Transmissive Sensor, Transistor Output, Two Mounting Tabs, Plastic Package Features ● Representative photograph, actual product appearance may vary. ● ● ● ● Due to regional agency approval


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    HOA0862-T55 HOA086X/087X HOA0862-T55 INFRARED TRANSISTOR HOA087X SDP8406 SEP8506 hoa0862 PDF

    sy 320 diode

    Abstract: No abstract text available
    Text: SIEMENS BUZ 41 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 41 A Vbs 500 V b ^DS on Package Ordering Code 4.5 A 1.5 Í2 TO-220 AB C67078-S1306-A3 Maximum Ratings Parameter Symbol Continuous drain current b Values


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    O-220 C67078-S1306-A3 tempe96 fl23Sb05 0GA41L sy 320 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 41 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 41 A Vos 500 V fa 4.5 A Abs on 1 .5 ft Package Ordering Code TO-220 AB C67078-S1306-A3 Maximum Ratings Parameter Symbol Values Continuous drain current


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    O-220 C67078-S1306-A3 00-----------------------V PDF

    Transistor BFr 99

    Abstract: Transistor BFR 96 TFC 718 S tfc 718 BFR34A Transistor BFR 38 TRANSISTOR 2SC 169 6620 bfr34 2N6620
    Text: ÍSIEû ESC D • fl235bDS QQQMb70 2 NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers ^ _ _ BFR34A 2 N 6620 SIEMENS AKTIEN6ESELLSCHAF BFR 34 A is an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 DIN 41 867 intended for use in RF amplifiers up to the GHz range,


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    fl235bDS 2N6620. Q62702-F346-S1 Q68000-A4668 fl23Sfc 0004fc BFR34A 200MHz Transistor BFr 99 Transistor BFR 96 TFC 718 S tfc 718 BFR34A Transistor BFR 38 TRANSISTOR 2SC 169 6620 bfr34 2N6620 PDF

    BD 130 NPN transistor

    Abstract: transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330
    Text: 25C D • 623SbOS 000434b 4 « S I E G _ NPN Silicon Planar Transistor BD 329 -SIEMENS AKTIENGESELLSCHAF 25C 043^6 O-.7 ^ SI - 0 7 BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly


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    00043Mb Q62702-D394 329/BD Q62702-D401 Q62902-B63 100ps 200jiS BD329 BD 130 NPN transistor transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330 PDF

    Bd 130 NPN transistor

    Abstract: 62702-D394 transistor z5
    Text: 2SC D • 623SbQS QQQM3Mb M « S I E G NPN Silicon Planar Transistor - 25C BD 329 CK346 0 — 7 r ? i~. ° 7 SIEMENS AKTIENGESELLSCHAF BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly


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    623SbQS CK346 329/BD 62702-D394 Q62702-D401 Q62902-B63 0QQ434fl -T-33 Bd 130 NPN transistor transistor z5 PDF

    transistor BD

    Abstract: TRANSISTOR bd 330
    Text: 2SC D • fl23SbDS QQQHBMI T M S I E G PNP Silicon Planar Transistor BD 330 _ 25C0 4 3 4 9 D T - 3 1 '/ ? SIEMENS AKTIENGESELLSCHAF BO 330 is an epitaxial PNP silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 329 it is particularly


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    fl23SbDS 330/BD Q62702-D395 Q62702-D401 Q62902-B63 235bQS GQ04351 BD330 transistor BD TRANSISTOR bd 330 PDF

    Transistor BFT 44

    Abstract: transistor tt 2078 TRANSISTOR 2SC 458 Transistor B C 458 transistor npn d 2078 B-01 BFT12 Q62702-F390 gp 823 Q0047
    Text: 1 - ’ asc D • ö23SbOS G004701 R « S I E G u‘ N PN Silicon RF Broadband Transistor BFT 12 SIEMENS AKTIENfiESELLSCHAF . D — 1 BFT 12 is an epitaxial N PN silicon planar RF transistor in a plastic package similar to TO 1 1 9 50 B 3 DIN 41 867 , intended for universal application in amplifiers up to the


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    23SbOS Q004701 Q62702-F390 Transistor BFT 44 transistor tt 2078 TRANSISTOR 2SC 458 Transistor B C 458 transistor npn d 2078 B-01 BFT12 Q62702-F390 gp 823 Q0047 PDF

    transistor D 2499

    Abstract: transistor K D 2499 BUZ 82 BUZ345 transistor 2499
    Text: SIEMENS BUZ 345 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 345 Vbs 100 V b 41 A flfasion 0.045 n Package Ordering Code TO-218AA C67078-S3121-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values


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    O-218AA C67078-S3121-A2 O-218AA transistor D 2499 transistor K D 2499 BUZ 82 BUZ345 transistor 2499 PDF

    BFS20R

    Abstract: IC mark A09 BFS 65 Q62702-F350 Q62702-F589 a10 transistor
    Text: 2sc D m aaastas oooMb^s ? « s i e g r NPN Silicon RF Transistor BFS 20 BFS 20 R SIEMENS A K T I E N 6E SE LL SCH AF BFS 20 is an epitaxial NPN silicon planar RF transistor in TO 236 plastic package 23 A 3 DIN 41 869 , intended for use in film circuits. The transistor BFS 20 is marked "NA". It is also available upon request with changed


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    a23Sb05 Q62702-F350 Q62702-F589 BFS20R IC mark A09 BFS 65 Q62702-F350 Q62702-F589 a10 transistor PDF

    Germanium power

    Abstract: pnp germanium transistor AF379
    Text: aSC D • 023SbD5 0QQ4QÔS 5 ■ S I E û T- PNP Germanium RF Transistor Of AF 379 - SIEMENS AKTIENGESELLSCHAF -fo r large sig n a l a p p lic a tio n s up to 9 0 0 M H z A F 379 is a PNP germanium planar RF transistor in 5 0 B 3 DIN 41 867 plastic package


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    023SbD5 2701-F72 TartlbS45 voltage11 Germanium power pnp germanium transistor AF379 PDF

    transistor K D 2499

    Abstract: transistor D 2499 S/transistor K D 2499 BUZ 82 transistor 2499 BUZ345
    Text: SIEMENS SIPMOS Power Transistor BUZ 345 • N channel • Enhancement mode • Avalanche-rated Type Vos BUZ 345 100 V 41 A ^DS on Package 1> O rdering Code 0.045 £J TO-218 AA C67078-S3121-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 28 'C


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    O-218 C67078-S3121-A2 transistor K D 2499 transistor D 2499 S/transistor K D 2499 BUZ 82 transistor 2499 BUZ345 PDF

    2073 transistor

    Abstract: BFS20 siemens
    Text: 2sc D m aaastas oooMb^s ? « s i e g r NPN Silicon RF Transistor BFS 20 BFS 20 R SIEMENS A K T I EN 6 ES EL LSC HA F B F S 2 0 is an epitaxial N P N silicon planar R F transistor in TO 2 3 6 plastic package 2 3 A 3 D IN 41 869 , intended for use in film circuits.


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    PDF

    transistor K D 2499

    Abstract: No abstract text available
    Text: BUZ 345 I nf ineon technologies SIPMOS Power Transistor • N channel £ • Enhancement mode • Avalanche-rated VPT05I56 3 Pin 2 Pin 1 G Type BUZ 345 Vbs b 100 V 41 A f iDS on 0.045 n Pin 3 S D Package Ordering Code TO-218 AA C67078-S3121-A2 Maximum Ratings


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    VPT05I56 O-218 C67078-S3121-A2 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T transistor K D 2499 PDF

    A1306A

    Abstract: buz41
    Text: SIEMENS SIPMOS Power MOS Transistor VDS /D ^ D S o n • BUZ 41A = 500 V = 4.5 A = 1-5 Q N channel • E nhancem ent mode • A valanche-proof • Package: TO -220 A B 1) Type Ordering code BUZ 41 A C 6 7078-A 1306-A 3 Maximum Ratings Parameter Symbol


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    078-A 306-A SIL00340 SiL00342 A1306A buz41 PDF

    BFW92

    Abstract: TRANSISTOR BFW 11 SQP5 2N6621 349 2110 Q62702-F321 Q68000-A4669 QQG4733 6621 transistor bfw 90
    Text: BSC D • Û235b05 0004731 7 « S I E G NPN Silicon RF Broadband Transistors T c rc\ t -» - SIEMENS AKTIENÛESELLSCHAF T - H 't r BFW 92 2 N 6621 BFW 9 2 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 DIN 41 86 7 ; intended for use as RF amplifier up to the GHz range,


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    6535bQ5 2N6621. Q62702-F321 Q68000-A4669 temperatu077 QQG4733 BFW92 BFW92 TRANSISTOR BFW 11 SQP5 2N6621 349 2110 Q68000-A4669 6621 transistor bfw 90 PDF

    Untitled

    Abstract: No abstract text available
    Text: N E C ELECTRONICS INC 30E D • t457SaS ODEiSíl a ■ T -41 - L i f P H O T O T R A N S IS T O R PHI 03 DARLING TO N PHOTO T R A N S IS T O R The PH 103 is a darlington photo transistor in a plastic molded package, PA C K A G E D IM E N SIO N S and very suitable for a detector of a photo interrupter.


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    t457SaS b427S25 T-41-63 PH103 PDF