LB 1639
Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
Text: SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz
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UPA801T
NE856
100mA
UPA801T
24-Hour
LB 1639
transistor Bf 444
transistor 4341
transistor BF 258
transistor BF 236
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transistor Bf 444
Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA
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UPA801T
NE856
100mA
UPA801T
24-Hour
transistor Bf 444
LB 1639
651 lem
amp 827 578 3 pin
DATASHEET OF BJT 547
transistor bf 422 NPN
S21E
UPA801T-T1
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marking 4ft sot363
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BC846S NPN general purpose double transistor Preliminary specification 1999 May 28 Philips Semiconductors Preliminary specification NPN general purpose double transistor BC846S FEATURES • Two transistors in one package with SC-88 dimensions
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MBD128
BC846S
SC-88
MAM340
BC846S
SC-88)
115002/01/pp8
marking 4ft sot363
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PDF
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LB 1639
Abstract: UPA801T BF 830 transistor UPA801T-T1-A NE856 S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA
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UPA801T
NE856
100mA
UPA801T
LB 1639
BF 830 transistor
UPA801T-T1-A
S21E
UPA801T-T1
OF BJT 547
transistor BF 507
651 lem
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TDK flyback transformer
Abstract: EE10 bobbin AN2811 TSM103W CAPPR2-5X11 TSM103 VIPER17 BAT46JFILM cappr3.5-8x12 STTH1R06A
Text: AN2811 Application note 3.5 W non-isolated offline constant-current LED driver based on VIPER17 Introduction High brightness LEDs are becoming a prominent source of lighting. Compared to conventional incandescent bulbs, high brightness LEDs light emitting diodes have
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AN2811
VIPER17
TDK flyback transformer
EE10 bobbin
AN2811
TSM103W
CAPPR2-5X11
TSM103
VIPER17
BAT46JFILM
cappr3.5-8x12
STTH1R06A
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PDF
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e2v ccd
Abstract: 7133A CCD67
Text: CCD67 Back Illuminated AIMO High Performance Compact Pack CCD Sensor FEATURES * 256 x 256 Pixel Image Area. * 26 mm Square Pixels. * Low Noise, High Responsivity Output Amplifier. * 100% Active Area. * Gated Dump Drain on Output Register. * Low Dark Current
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CCD67
e2v ccd
7133A
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e2v ccd
Abstract: e2v CCD67 CCD active area 8 x 8
Text: CCD67 Front Illuminated AIMO High Performance Compact Pack CCD Sensor FEATURES * 256 x 256 Pixel Image Area. * 26 mm Square Pixels. * Low Noise, High Responsivity Output Amplifier. * 100% Active Area. * Gated Dump Drain on Output Register. INTRODUCTION This version of the CCD67 family of CCD Sensors is a frame
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CCD67
e2v ccd
e2v CCD67
CCD active area 8 x 8
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PDF
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smps 48v 800w
Abstract: 48V SMPS 1000w 230 AC to 5V dc smps smps 1000W DC 12v to AC 220v 1000w 1000w DC 12v to AC 220v 230V INPUT TO 48V 10A OUTPUT SMPS smps 800W DC 12v to AC 220v 500w 1000W SMPS
Text: com.greegoo.www Greegoo Elextric Co.,Ltd. 2007 Switching Power Supplies Introduction Switching mode power supply 1- Enclosed type switching power supplies 15W Single Output Switching Power Supply Model Output GS-15. Input Feature • High efficiency, high reliability, lost cost
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200ms
100ms
240-370VDC
230VAC
500VDC
UL508
UL60950-1TUV
EN60950-1
EN55022
EN61000-3-2
smps 48v 800w
48V SMPS 1000w
230 AC to 5V dc smps
smps 1000W
DC 12v to AC 220v 1000w
1000w DC 12v to AC 220v
230V INPUT TO 48V 10A OUTPUT SMPS
smps 800W
DC 12v to AC 220v 500w
1000W SMPS
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PDF
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e2v CCD67
Abstract: CCD67 7133A e2v ccd 7133a 1 equivalent
Text: CCD67 Back Illuminated NIMO High Performance Compact Pack CCD Sensor FEATURES * 256 x 256 Pixel Image Area. * 26 mm Square Pixels. * Low Noise, High Responsivity Output Amplifier. * 100% Active Area. * Gated Dump Drain on Output Register. INTRODUCTION This version of the CCD67 family of CCD sensors is a frame
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CCD67
e2v CCD67
7133A
e2v ccd
7133a 1 equivalent
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PDF
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TRANSISTOR D 471
Abstract: BF485PN
Text: Philips Semiconductors For hook switches in equipment such as wired/cordless phones, fax machines and modems, the BF485PN dual transistor offers an ideal, cost-effective solution. Not only is it the first dual high-voltage transistor in a single SC-74 / SOT457 mini surface-mount package,
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BF485PN
SC-74
OT457
BF485PN)
TRANSISTOR D 471
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powerflex 525
Abstract: PFLEX-AT001 Allen-Bradley vfd manual 525 140M-C2E-B63 140M-C2E-C16 140M-C2E-C10 25B-A011N114 140U-H6C3-C60 vfd B DELTA programming manual 140M-C2E-B25
Text: Technical Data PowerFlex 520-Series AC Drive Specifications Original Instructions Topic Page Product Overview 2 Catalog Number Explanation 8 Technical Specifications 9 Environmental Specifications 12 Certifications 13 Dimensions and Weights 14 Design Considerations
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520-Series
520-TD001D-EN-E
520-TD001C-EN-E
powerflex 525
PFLEX-AT001
Allen-Bradley vfd manual 525
140M-C2E-B63
140M-C2E-C16
140M-C2E-C10
25B-A011N114
140U-H6C3-C60
vfd B DELTA programming manual
140M-C2E-B25
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PDF
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BFV469
Abstract: transistor NPN 3474 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D100 BFV469 NPN high-voltage transistor Product specification Supersedes data of 1997 Jun 20 1999 Apr 26 Philips Semiconductors Product specification NPN high-voltage transistor BFV469 FEATURES PINNING • High transition frequency
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M3D100
BFV469
O-126;
MAM254
SCA63
115002/00/02/pp8
BFV469
transistor NPN 3474
BP317
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PDF
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301 marking code PNP transistor
Abstract: BCV65 2108 npn transistor Philips MARKING CODE BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BCV65 NPN/PNP general purpose transistor Product specification Supersedes data of 1997 Apr 22 1999 Apr 22 Philips Semiconductors Product specification NPN/PNP general purpose transistor FEATURES BCV65 PINNING • Low current max. 100 mA
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M3D071
BCV65
OT143B
MAM333
OT143B)
SCA63
115002/00/03/pp8
301 marking code PNP transistor
BCV65
2108 npn transistor
Philips MARKING CODE
BP317
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PDF
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2108 npn transistor
Abstract: TRANSISTOR D 471 2PC945P
Text: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D186 2PC945 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 26 1999 May 28 Philips Semiconductors Product specification NPN general purpose transistor 2PC945 FEATURES PINNING
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M3D186
2PC945
2PA733.
MAM259
115002/03/pp8
2108 npn transistor
TRANSISTOR D 471
2PC945P
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PDF
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2108 npn transistor
Abstract: 2PC1815 TRANSISTOR D 471
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PC1815 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 28 1999 May 28 Philips Semiconductors Product specification NPN general purpose transistor 2PC1815 PINNING FEATURES
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M3D186
2PC1815
2PA1015.
MAM259
115002/03/pp8
2108 npn transistor
2PC1815
TRANSISTOR D 471
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PDF
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bc517
Abstract: StR 40000 or transistor transistor BC517
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC517 NPN Darlington transistor Product specification Supersedes data of 1997 Apr 23 1999 Apr 23 Philips Semiconductors Product specification NPN Darlington transistor BC517 FEATURES PINNING • High current max. 500 mA
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M3D186
BC517
BC516.
MAM302
SCA63
115002/00/04/pp8
bc517
StR 40000 or transistor
transistor BC517
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PDF
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2PA1015
Abstract: 2PA1015GR 2PA1015Y 2PC1815 BP317 AN 6752
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PA1015 PNP general purpose transistor Product specification Supersedes data of 1997 May 01 1999 Apr 08 Philips Semiconductors Product specification PNP general purpose transistor 2PA1015 FEATURES PINNING
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M3D186
2PA1015
2PC1815.
MAM285
SCA63
115002/00/03/pp8
2PA1015
2PA1015GR
2PA1015Y
2PC1815
BP317
AN 6752
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PDF
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Bf240
Abstract: transistor d 2333 2108 npn transistor Transistor B 886 NPN C 5344 transistor NPN 3474 str 6707 BF240 philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF240 NPN medium frequency transistor Product specification Supersedes data of 1998 Dec 02 1999 Apr 21 Philips Semiconductors Product specification NPN medium frequency transistor BF240 FEATURES PINNING
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M3D186
BF240
MAM258
SCA63
115002/00/04/pp8
Bf240
transistor d 2333
2108 npn transistor
Transistor B 886
NPN C 5344
transistor NPN 3474
str 6707
BF240 philips
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE ^24^02^ 00171bl TT5 • M57726 144-148MHz, 12.5V, 43W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM EHH- > — II— PIN : CDPin : RF INPUT VCC1 : 1st. DC SUPPLY O V C C 2 : 2nd. DC SUPPLY ®PO : RF OUTPUT
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OCR Scan
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00171b
M57726
144-148MHz,
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TRANSISTOR nf 842
Abstract: TRANSISTOR c 5578 B TRANSISTOR c 5578 TRANSISTOR 5578 TRANSISTOR 534
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz HIGH GAIN: IS2 1 EI2 = 9.0 dB TYP at 1 GHz
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OCR Scan
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NE856
100mA
UPA801T
UPA801T
UPA801T-T1
TRANSISTOR nf 842
TRANSISTOR c 5578 B
TRANSISTOR c 5578
TRANSISTOR 5578
TRANSISTOR 534
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PDF
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TRANSISTOR nf 842
Abstract: D 843 Transistor transistor su 312
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ±0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz 1.25 ± 0.1 HIGH GAIN:
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OCR Scan
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NE856
100mA
UPA801T
UPA801T
UPA801T-T1
24-Hour
TRANSISTOR nf 842
D 843 Transistor
transistor su 312
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PDF
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Untitled
Abstract: No abstract text available
Text: S E IX /IT E O H Today’s Results.tomorrow's Visio 0.250 AMP POSITIVE VOLTAGE REGULATORS EZ55Z3L TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com April 13, 1998 DESCRIPTION FEATURES The EZ55Z3L voltage regulators are monolithic integrated circuits designed for use in applications
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OCR Scan
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EZ55Z3L
TEL805-498-2111
EZ55Z3L
250mA
OT-223
Z55Z3L
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PDF
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LT 5207
Abstract: ZX sot
Text: í¡ÍlS E I\/IT E O H TA Today's Results.tomorrow's Visio 0.250 AMP POSITIVE VOLTAGE REGULATORS EZ55Z3L TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com April 13, 1998 DESCRIPTION FEATURES The EZ55Z3L voltage regulators are monolithic integrated circuits designed for use in applications
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OCR Scan
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EZ55Z3L
TEL805-498-2111
EZ55Z3L
250mA
OT-223
LT 5207
ZX sot
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEM ENS ñ235bQS QD^bbbB H51 Low-Drop Voltage Regulator TLE 4276 Features • • • • • • • Output voltage tolerance < ± 4 % Low-drop voltage Inhibit input Very low current consumption Short-circuit-proof Reverse polarity proof Suitable for use in automotive electronics
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OCR Scan
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235bQS
Q67000-A9262
P-T0220-5-3
Q67000-A9263
Q67000-A9264
Q67006-A9266
P-T0220-5-122
Q67006-A9268
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