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    TRANSISTOR TOSHIBA Search Results

    TRANSISTOR TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TOSHIBA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    RN1110FS

    Abstract: RN1111FS RN2110FS RN2111FS
    Text: RN1110FS,RN1111FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1110FS, RN1111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.


    Original     		PDF RN1110FS RN1111FS RN1110FS, RN2110FS, RN2111FS RN1111FS RN2110FS RN2111FS

    Untitled

    Abstract: No abstract text available
    Text: RN49A6FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN49A6FS Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.


    Original     		PDF RN49A6FS

    RN1112FS

    Abstract: RN1113FS RN2112FS RN2113FS
    Text: RN1112FS,RN1113FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1112FS, RN1113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.


    Original     		PDF RN1112FS RN1113FS RN1112FS, RN2112FS, RN2113FS RN1113FS RN2112FS RN2113FS

    Untitled

    Abstract: No abstract text available
    Text: RN49A6FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN49A6FS Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.


    Original     		PDF RN49A6FS

    RN4993FS

    Abstract: No abstract text available
    Text: RN4993FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4993FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count.


    Original     		PDF RN4993FS RN4993FS

    RN4984FS

    Abstract: No abstract text available
    Text: RN4984FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4984FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.


    Original     		PDF RN4984FS RN4984FS

    Untitled

    Abstract: No abstract text available
    Text: RN2907FS~RN2909FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2907FS,RN2908FS,RN2909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.


    Original     		PDF RN2907FS RN2909FS RN2908FS RN1907FS RN1909FS RN2908FSesented

    Untitled

    Abstract: No abstract text available
    Text: RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1907FS, RN1908FS, RN1909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.


    Original     		PDF RN1907FS RN1909FS RN1907FS, RN1908FS, RN2907FS RN2909FS RN1908Fesented

    Untitled

    Abstract: No abstract text available
    Text: RN2967FS~RN2969FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2967FS,RN2968FS,RN2969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.


    Original     		PDF RN2967FS RN2969FS RN2968FS RN2969FS

    Untitled

    Abstract: No abstract text available
    Text: RN4984FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4984FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.


    Original     		PDF RN4984FS

    Untitled

    Abstract: No abstract text available
    Text: RN4984FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4984FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.


    Original     		PDF RN4984FS

    RN1908FS

    Abstract: RN1907FS RN1909FS RN2907FS RN2909FS f7 transistor transistor -25 f7
    Text: RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1907FS, RN1908FS, RN1909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.


    Original     		PDF RN1907FS RN1909FS RN1907FS, RN1908FS, RN1908FS RN1907FS RN1908FS RN1909FS RN2907FS RN2909FS f7 transistor transistor -25 f7

    Untitled

    Abstract: No abstract text available
    Text: RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1112MFV,RN1113MFV 0.32 ± 0.05 0.80 ± 0.05 1 1 0.4 0.4 0.8 ± 0.05 Incorporating a bias resistor into the transistor reduces the number of


    Original     		PDF RN1112MFV RN1113MFV

    Untitled

    Abstract: No abstract text available
    Text: RN1912AFS, RN1913AFS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN1912AFS, RN1913AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces the parts count.


    Original     		PDF RN1912AFS, RN1913AFS RN2912AFS/RN2913AFS

    RN1907AFS

    Abstract: RN1909AFS RN2907AFS RN2908AFS RN2909AFS
    Text: RN2907AFS~RN2909AFS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN2907AFS, RN2908AFS, RN2909AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces the parts count.


    Original     		PDF RN2907AFS RN2909AFS RN2907AFS, RN2908AFS, RN2908AFS RN2907AFS RN1907AFS RN1909AFS RN1909AFS RN2908AFS RN2909AFS

    RN1102FS

    Abstract: RN2111FS RN49P1FS 25Q2
    Text: RN49P1FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) Preliminary RN49P1FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces the parts count.


    Original     		PDF RN49P1FS RN1102FS RN2111FS RN49P1FS 25Q2

    RN1544

    Abstract: No abstract text available
    Text: RN1544 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1544 For use in Muting and Switching Applications. • Emitter-base voltage is high: VEBO = 25 V (max) • Incorporating a bias resistor into a transistor reduces parts count.


    Original     		PDF RN1544 RN1544

    RN1912AFS

    Abstract: RN1913AFS
    Text: RN1912AFS, RN1913AFS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN1912AFS, RN1913AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces the parts count.


    Original     		PDF RN1912AFS, RN1913AFS RN2912AFS/RN2913AFS RN1912AFS RN1913AFS

    RN4985FS

    Abstract: No abstract text available
    Text: RN4985FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor RN4985FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count.


    Original     		PDF RN4985FS RN4985FS

    Untitled

    Abstract: No abstract text available
    Text: RN2907AFS~RN2909AFS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN2907AFS, RN2908AFS, RN2909AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces the parts count.


    Original     		PDF RN2907AFS RN2909AFS RN2907AFS, RN2908AFS, RN2908AFS RN2907AFS RN1907AFS RN1909AFS

    Untitled

    Abstract: No abstract text available
    Text: RN4985FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor RN4985FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count.


    Original     		PDF RN4985FS

    Untitled

    Abstract: No abstract text available
    Text: RN1912AFS, RN1913AFS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN1912AFS, RN1913AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces the parts count.


    Original     		PDF RN1912AFS, RN1913AFS RN2912AFS/RN2913AFS

    Untitled

    Abstract: No abstract text available
    Text: RN4985FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4985FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count.


    Original     		PDF RN4985FS