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    TRANSISTOR TOSHIBA 2SK Search Results

    TRANSISTOR TOSHIBA 2SK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TOSHIBA 2SK Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    2SK2854 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    2SK2854 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    2SK2854 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    2SK2855 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    2SK2855 PDF

    Power MOSFET, toshiba

    Abstract: 2SK3074 HIGH POWER MOSFET TOSHIBA toshiba marking code transistor
    Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    2SK3074 630mW Power MOSFET, toshiba 2SK3074 HIGH POWER MOSFET TOSHIBA toshiba marking code transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    2SK3074 630mW PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    2SK3074 630mW PDF

    TOSHIBA NOTE

    Abstract: 2SK3074
    Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    2SK3074 630mW TOSHIBA NOTE 2SK3074 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


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    2SK3074 630mW PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other


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    2SK3475 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other


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    2SK3756 32dBmW PDF

    STF 410 B 2 A

    Abstract: 16698
    Text: TOSHIBA -CDISCRETE/OPTOJ Ti 9097250 TOSHIBA <DISCRETE/OPTO> ¿ ÿ o s h ih t DE I t DTTBSO ODlbbTö 99D 16698 SEMICONDUCTOR DTSS-oq TOSHIBA FIELD EFFECT TRANSISTOR 2SK529 SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-MOS INDUSTRIAL APPLICATIONS Unit in mm


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    100nA T0-220 STF 410 B 2 A 16698 PDF

    A45A

    Abstract: SO402 2SK386 j2f3 16664
    Text: TOSHIBA -CDISCRETE/OPTOJ- ‘H 9097250 TOSHIBA <DISCRETE/OPTO> DE 99D SEMICONDUCTOR I SOTTESO OOlbbba 2 16662 DT_3CH3 TOSHIBA FIELD EFFECT TRANSISTOR 2SK386 SILICON N CHANNEL MOS TYPE TECHNICAL DATA <7T — M O S INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.


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    100nA A45A SO402 2SK386 j2f3 16664 PDF

    2SK3756

    Abstract: No abstract text available
    Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other


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    2SK3756 32dBmW 2SK3756 PDF

    2SK3756

    Abstract: MARKING CODE c5 sc-62
    Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other


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    2SK3756 32dBmW 2SK3756 MARKING CODE c5 sc-62 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other


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    2SK3756 32dBmW PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use


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    2SK2854 PDF

    TOSHIBA Semiconductor Reliability Handbook

    Abstract: 2SK2854
    Text: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use


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    2SK2854 TOSHIBA Semiconductor Reliability Handbook 2SK2854 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS GSM (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use.


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    2SK3077 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1062 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE niiinfi? Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCHING APPLICATIONS INTERFACE APPLICATIONS Excellent Switching Time : ton = 14ns Typ. High Forward Transfer Admittance


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    2SK1062 2SJ168. PDF

    L713

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO} Ti 99D 16713 9097250 TOSHIBA CDISCRETE/OPTO ^osfiilx D E ^ T D T V B S O DD1 L713 14 D r - s î ' TOSHIBA FIELD EFFECT TRANSISTOR’ SEMICONDUCTOR I3 2SK 538 TECHNICAL DATA SILICON N CHANNEL MOS TYPE 7T-M0S) INDUSTRIAL APPLICATIONS


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    100nA L713 PDF

    2SK3077

    Abstract: No abstract text available
    Text: 2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS GSM (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use.


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    2SK3077 2SK3077 PDF

    TOSHIBA Semiconductor Reliability Handbook

    Abstract: 2SK2855
    Text: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use


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    2SK2855 TOSHIBA Semiconductor Reliability Handbook 2SK2855 PDF