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    TRANSISTOR TOSHIBA K3868 Search Results

    TRANSISTOR TOSHIBA K3868 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TOSHIBA K3868 Datasheets Context Search

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    k3868

    Abstract: 2SK3868 transistor Toshiba K3868
    Text: 2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3868 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: |Yfs| = 3 S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3868 k3868 2SK3868 transistor Toshiba K3868 PDF

    transistor Toshiba K3868

    Abstract: k3868 2SK3868 k386 transistor MJ 122
    Text: 2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3868 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3868 transistor Toshiba K3868 k3868 2SK3868 k386 transistor MJ 122 PDF

    k3868

    Abstract: 2SK3868 transistor Toshiba K3868 K386
    Text: 2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3868 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3868 k3868 2SK3868 transistor Toshiba K3868 K386 PDF

    k3868

    Abstract: 2SK3868 transistor Toshiba K3868
    Text: 2SK3868 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type p -MOSVI 2SK3868 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: R DS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 A (V DS = 500 V)


    Original     		2SK3868 k3868 2SK3868 transistor Toshiba K3868 PDF