Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR TT 2070 Search Results

    TRANSISTOR TT 2070 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2070 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TT 2070 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    T3HS

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR 22E CORP im Q lh D OOOLTSl T-3HS 2SC3142 N PN Epitaxial Planar Silicon Transistor 2018A High-Frequency General-Purpose Amp Applications 1066A Features . FBET s e r i e s . . C o m p a c t p a c k a g e e n a b l i n g c o m p a c tn e s s o f s e t s .


    OCR Scan     		2SC3142 750MHz T3HS PDF

    Transistor TT 2140

    Abstract: transistor tt 2170 em transistor tt 2170 transistor tt 2190 em TH 2190 Transistor TRANSISTOR TT 2190 ssc2200
    Text: EPSON _ SSC2000 Series Standard Cell • • • • Built-in Analog Circuit Internal Two Power Supplies Level Shifter Wide Operating Voltage: 0.9 V to 6.0 V Up to 11,000 gates I DESCRIPTION T he SS C 2000 series is a C M O S standard cell w ith low -threshold m anufacturing process providing low voltage


    OCR Scan     		SSC2000 WU01- Transistor TT 2140 transistor tt 2170 em transistor tt 2170 transistor tt 2190 em TH 2190 Transistor TRANSISTOR TT 2190 ssc2200 PDF

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR CORP 55E 7cìeì707b O O O b á ñ 11 a D T - 31-15 2SC4407 NPN Epitaxial Planar Silico n Transistor 2059 VHF/UHF MIX, OSC Applications 2760 Applications • V H F/U H F m ixers, frequency converters, local oscillators Features f r = 3.0GHz typ


    OCR Scan     		2SC4407 2SC4407-applied PDF

    transistor 2N3055

    Abstract: MJ2955 300 watts amplifier mj2955 MBD5300 2N3055* motorola MJ2955 app. note 2N3055 AN-415 MJ2500 MJ3000
    Text: MJ2955 SILICON 15 AMPERE POWER TRANSISTOR PNP SILICON POWER TRANSISTOR PNP SILICON . . . designed for general-purpose switching and amplifier applications. • DC Current Gain — hpE = 20-70 @ lc = 4.0 Adc * Collector-Emitter Saturation Voltage — VcE(sat) “ 1*1 Vdc (Max) @ lc = 4.0 Adc


    OCR Scan     		MJ2955 2N3055 MJ3000, MJ3001 MJ2500 transistor 2N3055 MJ2955 300 watts amplifier mj2955 MBD5300 2N3055* motorola MJ2955 app. note 2N3055 AN-415 MJ3000 PDF

    TT 2076 transistor

    Abstract: 2sc2052 TT 2076 tbb 2066 2SA934 2SA93 IN tt 2076 transistor s 2065 af Mix 2071
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		27MHz, 35dBm, TT 2076 transistor 2sc2052 TT 2076 tbb 2066 2SA934 2SA93 IN tt 2076 transistor s 2065 af Mix 2071 PDF

    31086F

    Abstract: 2SA1204Y
    Text: INTEGRATED OSHIBA CIRCUIT TECHNICAL TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT DATA TA31086F SILICON MONOLITHIC SYSTEM REGULATOR IC FOR CORDLESS TELEPHONE 3 independent regulators on a chip, very suitable for a handset of cordless telephone. FEATURES • 3 regulators, independent one another


    OCR Scan     		TA31086F 2SA1204-Y TA31086F-9_ TCH7247 SSOP16-P-225A TA31086F- 31086F 2SA1204Y PDF

    LMM 2057

    Abstract: t3hs marking ADMI 2SC3142 high power amp 100mhz 1w
    Text: imQlh 22E D SA NY O S E M I C O N D U C T O R CORP OOOLTSl 0 T-3HS 2SC3142 N P N Epitaxial Plan ar S ilic o n T ransistor 2018A High-Frequency General-Purpose Amp Applications 1066A Features . FBET s e r i e s . . C o m p a c t p a c k a g e e n a b l i n g c o m p a c tn e s s o f s e t s .


    OCR Scan     		7cn707tI 2SC3142 1066a 750MHz LMM 2057 t3hs marking ADMI 2SC3142 high power amp 100mhz 1w PDF

    RCA TO-5

    Abstract: 2N2016 2N3055 2n3772 2N6474 JAN 2N5781 2N5415 2N6107 2N6248 2N6372
    Text: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C t o 15 A . . . P f t o 2 0 0 W . . . V C E t o 125 V 1« “ -3.5 max. Py«10W m ax . ITO-3SI I{ > 8 A max. P y * 40 W max. TO-66 * lc * - 6 A max. P y - 40 W max. 1TO-66)* le « 7 A max. P y - 40 W max. V E R S A W ATT


    OCR Scan     		IT039I O-2201 lc-15 ITO-31 O-2201 90x90 RCA TO-5 2N2016 2N3055 2n3772 2N6474 JAN 2N5781 2N5415 2N6107 2N6248 2N6372 PDF

    transistor C3866

    Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
    Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)


    Original     		PDF

    pa 2030a

    Abstract: cp 035 sanyo NPN S2e 2SC4412 Marking transistor 3019 Transistor
    Text: SA NY O S E M I C O N D U C T O R 25E D CORP 7T= 707b 0 0 Q 7 0 3 7 b T -3H 7 2SC4412 ^ N PN Triple Diffused Planar Silicon Transistor 2018 A TV Camera Deflection, High-Voltage Driver Applications D3019 F e a tu r e s . H igh breakdow n voltage (V c e o —300V)


    OCR Scan     		1707b 00Q7037 2SC4412 pa 2030a cp 035 sanyo NPN S2e Marking transistor 3019 Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR CORP 2SE D 7T=i707L GG0hñ3S 7 T-31-n 2SC377 4 20 18 A N PN Epitaxial Pianar Silicon Transistor UHF Low-Noise Wide-Band Amp Applications 1947B Applications . UHF low-noise ampi:ifiers, wide-band amplifiers Features . Small noise figure : NF=2.2dB typ f=0.9GHz .


    OCR Scan     		i707L T-31-n 2SC377 1947B PDF

    358 IC

    Abstract: transistor 359 AJ 2SC4453 S2E MARKING 2S12 transistor npn d 2058
    Text: SANYO SEMICONDUCTOR CORP 2SC4453 52E D • 7 ^ 7 Q ? h 0007104 t ■ T-35-09 2018A N PN Epitaxial Planar Silicon Transistor High-Speed Switching Applications 2S12 F e a tu re s • F ast switching speed • Low collector saturation voltage • High gain-bandwidth product


    OCR Scan     		2SC4453 2SC4453-applied 358 IC transistor 359 AJ S2E MARKING 2S12 transistor npn d 2058 PDF

    300W TRANSISTOR AUDIO AMPLIFIER

    Abstract: 2N6474 npn 40872 npn darlington 400v 15a transistor BDY29 2N1482 2N3054 2N344 2N5298 2N5786
    Text: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* A it . . A A i 9U X 9U le a 1 .S A m ax. lc » 3 .S A m ax. P y « 10 W m ax. TO-391* P T - 8 .7 S W m u . (TO-391* 90 x 9 0


    OCR Scan     		ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 300W TRANSISTOR AUDIO AMPLIFIER 2N6474 npn 40872 npn darlington 400v 15a transistor BDY29 2N1482 2N3054 2N344 2N5298 2N5786 PDF

    BDX33C darlington pair

    Abstract: 40349 transistor BDY29 2N3773 transistor 2N3055 RCA 528 2n3771 2N3772 RCA RCA transistor 2n3055 RCA 40250
    Text: Ic to 80 A . . . P t to 300 W . . . V c E to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* le a 1 .S A max. PT - 8.7S W m u . TO-391* A i t . AAi 9U X 9U lc » 3.S A max. P y « 10 W max. (TO-391* lc * 4 A max. Pt - GO W max.


    OCR Scan     		ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 BDX33C darlington pair 40349 transistor BDY29 2N3773 transistor 2N3055 RCA 528 2n3771 2N3772 RCA RCA transistor 2n3055 RCA 40250 PDF

    rca 2n6103

    Abstract: 2N6101 rca 2N6476 rca RCA 40250 transistor Bf 353 RCA 411 TRANSISTOR TT 2070 2N1482 2N3054 2N5298
    Text: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le a 1 .S A max. <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* PT - 8.7S W m u . TO-391* lc » 3.S A max. P y « 10 W max. (TO-391* lc * 4 A max. Pt - GO W max. < T 0 6 6 *


    OCR Scan     		ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 rca 2n6103 2N6101 rca 2N6476 rca RCA 40250 transistor Bf 353 RCA 411 TRANSISTOR TT 2070 2N1482 2N3054 2N5298 PDF

    transistor marking bh ra

    Abstract: 2SA1641
    Text: S A N Y O S E M I C O N D U C T O R CORP SHE D 7 eJ‘ì707b 000-7140 4 2SA1641 T- 31-IS PNP Epitaxial Planar Silicon Transistor 2044 High-Current Switching Applications I2326A F eatures . Adoption of FBET, MBIT processes. • Low saturation voltage. • F ast switching speed.


    OCR Scan     		2SA1641 31-IS I2326A 2SA1641-used transistor marking bh ra 2SA1641 PDF

    transistor kd 2059

    Abstract: pa 2030a kd 2059 SANYO SS 1001 2SC4523 MARKING 2S SMA
    Text: SANYO S E M I C O N D U C T O R CORP 55E D 7^707^ OD0.71 1 1 ö r-3S~n 2SC4523 ♦ NPN Epitaxial Planar Silicon Transistor 2044 • High-Speed Switching Applications 3142 F e a tu re s . Adoption o f F B E T , M BIT processes • Large current capacity •Low collector-to-emitter saturation voltage


    OCR Scan     		2SC4523 T-35-11 transistor kd 2059 pa 2030a kd 2059 SANYO SS 1001 MARKING 2S SMA PDF

    2SC3775

    Abstract: 2SC4405
    Text: 7Ti707b QOQbûêl 3 55E D SANYO S E M I C O N D U C T O R CORP 2SC4405 - T -3 Ì -I S 2059 N P N E p it a x ia l P la n a r S il i c o n T ra n sist o r UHF Low-Noise Wide-Band Amp Applications 2758 Applications •U H F , low -noise am plifiers, wide-band am plifiers


    OCR Scan     		2SC4405-applied 2SC3775 2SC4405 PDF

    pa 2030a

    Abstract: 25CC 2SA1622 FC103 2018Al IC 7443
    Text: SANYO SEMICONDUCTOR CORP 7^ 7 0 7 1 3 22E » 0QG7443 h T~ 21 'Oc{ FC103 PNP Epitaxial Planar Silicon Com posite Transistor 2066 Low-Frequency General-Purpose Amp, Differential Amp Applications 3111 F e a tu re s • Com posite type w ith 2 tran sisto rs contained in the CP package c u rre n tly in use, im p ro v in g th e


    OCR Scan     		FC103 2SA1622, pa 2030a 25CC 2SA1622 2018Al IC 7443 PDF

    CBIC-U

    Abstract: PU392A02 ALA210 NU231A01 NU362A02 NU431A01 PU432A01 PU693A02 pnp 8 transistor array npn 8 transistor array
    Text: microelectronics Data Sheet May 1996 group Lucent T echnologies Bell Labs Innovations ALA210 UHF Semicustom Linear Array Features Description • High-speed CBIC process: 4.5 GHz NPN, 3.75 GHz PNP The ALA210 UHF Semicustom Linear Arrays is an integrated circuit consisting of vertical NPN and PNP


    OCR Scan     		ALA210 DS96-150BPF DS92-120LBC) CBIC-U PU392A02 NU231A01 NU362A02 NU431A01 PU432A01 PU693A02 pnp 8 transistor array npn 8 transistor array PDF

    Transistor 2n6099

    Abstract: BD278 2N3055 2N6478 power amplifier circuit 300W TRANSISTOR AUDIO AMPLIFIER 40636 class ab audio amplifier circuit transistor 2N1482 2N5415 2N344
    Text: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V H O M ETA XIA L-B A SE N-P-N POWER TYPES <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* A it . AAi 9U X 9U le a 1 .S A max. lc » 3.S A max. Py « 10 W max. TO-391* PT - 8.7S W m u . (TO-391* 90 x 90 90 x lc * 4 A max.


    OCR Scan     		ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 Transistor 2n6099 BD278 2N3055 2N6478 power amplifier circuit 300W TRANSISTOR AUDIO AMPLIFIER 40636 class ab audio amplifier circuit transistor 2N1482 2N5415 2N344 PDF

    RCA 40636 transistor

    Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
    Text: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.


    OCR Scan     		ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 RCA 40636 transistor rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327 PDF

    motorola HEP cross reference

    Abstract: EPT 4045 KPT23 motorola HEP 320 cross reference vef 202 manual KEP52 MC10EP016 HEP 801 hep51 HEP64
    Text: BR1513/D Rev. 2, Apr-2001 ECLinPS Plus Device Data ECLinPS Plus Device Data Advanced ECL in Picoseconds BR1513/D Rev. 2, Apr–2001  SCILLC, 2001 Previous Edition  2000 “All Rights Reserved” ECLinPS, ECLinPS Lite, and ECLinPS Plus are trademarks of Semiconductor Components Industries, LLC.


    Original     		BR1513/D Apr-2001 r14525 DLD601 motorola HEP cross reference EPT 4045 KPT23 motorola HEP 320 cross reference vef 202 manual KEP52 MC10EP016 HEP 801 hep51 HEP64 PDF