TRANSISTOR TT FET Search Results

TRANSISTOR TT FET Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR TT FET Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BUK655-500B Abstract: T0220AB Text: P H ILIPS bSE D INTER NAT ION AL ES 7 1 1 0 6 2 b D0bH31b TTö • PHIN Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET G EN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.	OCR Scan	BUK655-500B T0220AB dSiV-100/ /C-156	PDF
TEA-1035 Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2498 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS 2SK2498 is N-Channel MOS Field E ffe c tT ra n sisto r designed fo r in millimeter high c u rre n t sw itch ing applications, FEATURES	OCR Scan	2SK2498 2SK2498 TEA-1035	PDF
PU1501 Abstract: PU4471 PU4135 PU7456 PU4000 PU4118 PU4128 apu4148 PU4444 PU3134 Text: Transistore Selection Guide by Applications and Functions IPower Transistor Arrays Series Name PU3000 Series Equivalent Circuit Package (No.) Equivalent Circuit I I I ^''''\_Structure A p p lic a tio n ^ ^ General Example (N P N ) TT 2 s 5 Low VcE(sat) PUA3000	OCR Scan	PU3000 PUA3000 PU4000 PU3110 PU3210 PU4110 PU4210 PU4410 PU4510 PU4310 PU1501 PU4471 PU4135 PU7456 PU4118 PU4128 apu4148 PU4444 PU3134	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2480 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2480 is N-Channel MOS Field E ffe c tT ra n s is to rd e s ig n e d PACKAGE DIMENSIONS in millimeter fo r high vo lta g e s w itc h in g a p p lica tio n s.	OCR Scan	2SK2480 2SK2480	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2478 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP TIO N The 2SK2478 is N-Channel MOS Field E ffe c tT ra n s is to rd e s ig n e d PACKAGE DIMENSIONS in millimeter fo r high vo lta g e s w itc h in g a p p lica tio n s.	OCR Scan	2SK2478 2SK2478	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2477 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2477 is N-Channel MOS Field E ffe c tT ra n s is to rd e s ig n e d PACKAGE D IM E N SIO N S in m illim eter fo r high vo lta g e s w itc h in g a p p lica tio n s.	OCR Scan	2SK2477 2SK2477	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2485 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2485 is N-Channel MOS Field E ffe c tT ra n s is to rd e s ig n e d fo r high vo lta g e s w itc h in g a p p lica tio n s. FEATURES • L o w O n-R esistance	OCR Scan	2SK2485 2SK2485	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2478 SW ITCHING N-CHANNEL POWER M O S FET INDUSTRIAL USE DESCRIPTION The 2SK2478is N-Channel MOS Field E ffe c tT ra n s is to r designed P A C K A G E D IM E N S IO N S in m illimeter fo r hig h v o lta g e s w itc h in g applications,	OCR Scan	2SK2478 2SK2478is	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2476 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP TIO N The 2SK2476 is N-Channel MOS Field E ffe c tT ra n s is to rd e s ig n e d PACKAGE DIMENSIONS in millimeter fo r high vo lta g e s w itc h in g a p p lica tio n s.	OCR Scan	2SK2476 2SK2476	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2487 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2487 is N-Channel MOS Field E ffe c tT ra n s is to rd e s ig n e d PACKAGE D IM E N SIO N S in m illim eter fo r high vo lta g e s w itc h in g a p p lica tio n s.	OCR Scan	2SK2487 2SK2487	PDF
2SA936 Abstract: No abstract text available Text: S ÿ > y X $ /Transistors 9 Q “ A Q 1 R w 2SA936 1 1- * * ty T l/y°ly~ ^ pnp v •;=i u > s > h? > ¡HiiHl & Z ' f High Gain Amp. & Switching Epitaxial Planar PNP Silicon Darlington Transistor • ÿ f ff i^ jiS I /D im e n s io n s U nit : mm) • tt*	OCR Scan	2SA936 SC-43 2SA936	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2514 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2514 is N-Channel MOS Field E ffe c tT ra n s is to rd e s ig n e d fo r high c u rre n t s w itc h in g a p p lica tio n s. FEATURES • S u p e r L o w O n-R esistance	OCR Scan	2SK2514 2SK2514	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2511 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2511 is N-Channel MOS Field E ffe c tT ra n s is to rd e s ig n e d PACKAGE D IM E N SIO N S in m illim eter fo r high c u rre n t s w itc h in g a p p lica tio n s.	OCR Scan	2SK2511 2SK2511	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2515 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE D IM E N SIO N S The 2SK2515 is N-Channel MOS Field E ffe c tT ra n s is to rd e s ig n e d in m illim eter fo r high c u rre n t s w itc h in g a p p lica tio n s.	OCR Scan	2SK2515 2SK2515	PDF

Untitled Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2486 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP TIO N The 2SK2486 is N-Channel MOS Field E ffe c tT ra n s is to rd e s ig n e d PACKAGE D IM E N SIO N S in m illim eter fo r high vo lta g e s w itc h in g a p p lica tio n s.	OCR Scan	2SK2486 2SK2486	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2488 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP TIO N The 2SK2488 is N-Channel MOS Field E ffe c tT ra n s is to rd e s ig n e d PACKAGE D IM E N SIO N S in m illim eter fo r high vo lta g e s w itc h in g a p p lica tio n s.	OCR Scan	2SK2488 2SK2488	PDF
BN1A4M Abstract: un8h 5942 Text: - J - 57 . C / -tt^ê* h ~7 C om po und Transistor BN1 A 4 M m tte m ft PNP X e m $ W IU ^ -fô : m m * O s < 4 7 X í É í ñ ; £ F í3 j l L - 0 ' ¿ 1 ' o (R i = o B A I A 4 M 10 t k Q , R 2 = 10 k Q ) =¡ > 7 ° U t ( T a n =	OCR Scan		PDF
2SK458 Abstract: 2SK45 Text: tr m & m m M O S « # * * * ''* ? - h 9 M O S Field Effect Pow er Transistor 2SK458 N f t ^ ' 0r7 - M O S FET X 'f dUfls X i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK458ii, FET PACKAGE DIMENSIONS Unit : mm T*, iS S & D C	OCR Scan	2SK458 2SK458Ã 2SK458 2SK45	PDF
Untitled Abstract: No abstract text available Text: Philips Components Data sheet status Prelim inary specification date of issue March 1991 BUK541-60A/B PowerMOS transistor Logic level FET PHI L IP S I N T E R N A T I O N A L N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack	OCR Scan	BUK541-60A/B 711Dfl2fc, BUK541 T-39-09 711GfiEb	PDF
k54160a Abstract: BUK541 BUK541-60A BUK541-60B k541 TRANSISTOR k541 Text: Philips Components Data sheet status Prelim inary specification date of issue March 1991 B U K 5 4 1 - 6 0 A /B PowerMOS transistor Logic level FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent m ode logic level field-effect power transistor in a plastic full-pack	OCR Scan	-SOT186 K541-60A/B 711DflEb BUK541 K541-60A/B k54160a BUK541-60A BUK541-60B k541 TRANSISTOR k541	PDF
k541 Abstract: K54-16 BUK541 BUK541-60A BUK541-60B Text: Philips Components Data sheet status Prelim inary specification date of issue March 1991 B U K 5 4 1 - 6 0 A /B PowerMOS transistor Logic level FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack	OCR Scan	-SOT186 K541-60A/B 711dfleb BUK541 k541 K54-16 BUK541-60A BUK541-60B	PDF
transistor et 454 Abstract: 2sk542 DC-DC H14 F530 T108 T460 Text: mm & ma SEC M O S M nft& }£:s<r7 M O S Field Effect P o w er Transistor m = f= r l\T X 2SK542 N f t ^ /^ '° 7 - M O S FET x > r i i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK 542Ü , FET ^ J fiia /P A C K A G E DIMENSIONS	OCR Scan	2SK542 2SK542Ã transistor et 454 2sk542 DC-DC H14 F530 T108 T460	PDF
2SK659 Abstract: TC-6071 Text: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #	OCR Scan	2SK659 2SK659Ã 2SK659 TC-6071	PDF
k 246 transistor fet Abstract: No abstract text available Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench' technology. The device features very low on-state resistance and has	OCR Scan	BUK9575-55 T0220AB DE-55 k 246 transistor fet	PDF

TRANSISTOR TT FET Search Results

TRANSISTOR TT FET Result Highlights (5)

TRANSISTOR TT FET Datasheets Context Search

BUK655-500B

TEA-1035

PU1501

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2SA936

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BN1A4M

2SK458

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k54160a

k541

transistor et 454

2SK659

k 246 transistor fet