TRANSISTOR TZ Search Results

TRANSISTOR TZ Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR TZ Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j	PDF
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055	PDF
transistor b 595 Abstract: ATC100A PH1819-45 Text: = z-P= Coming Attractions an AMP company Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metalization System	Original	PHl819-45 transistor b 595 ATC100A PH1819-45	PDF
transistor c36 Abstract: wacom wacom connector transistor j8 f 9234 transistor B 325 PH3134 Text: =5= ,-= E -= EF an AMP company * ,- .-z = Radar Pulsed Power Transistor, 11 W, lps Pulse, 10% Duty PH3134-11s 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry	Original	PH3134-11s MJLLIMET1344) transistor c36 wacom wacom connector transistor j8 f 9234 transistor B 325 PH3134	PDF
EM7164SU16 Abstract: No abstract text available Text: Preliminary merging Memory & Logic Solutions Inc. EM7164SU16 Series 1Mx16 Single Transistor RAM Document Title 1M x 16 bit Single Transistor RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Jul. 11 , 2005 Preliminary 0.1 1’st Revision	Original	EM7164SU16 1Mx16 690-7t 100ns 120ns	PDF
transistor j6 Abstract: J122 transistor J6 transistor transistor j122 j48 transistor transistor 1015 J122 J122 npn PH2731-75L PACIFIC 1015 Text: an = AMP wmDanv 5 = Radar Pulsed Power Transistor, 75W, 300~s Pulse, 10% Duty PI-f2731 -75L 2.7 - 3.1 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry Diffused Emitter Ballasting Resistors	Original	PI-f2731 PH2731-75L transistor j6 J122 transistor J6 transistor transistor j122 j48 transistor transistor 1015 J122 J122 npn PH2731-75L PACIFIC 1015	PDF
EM7164SU16 Abstract: EM7164SU16W DIE 8INCH T&R Text: Preliminary EM7164SU16W Series 1Mx16 Single Transistor RAM Document Title 1M x 16 bit Single Transistor RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Jun. 07 , 2005 Preliminary 0.1 2’nd Draft Add net die and pad coordinates	Original	EM7164SU16W 1Mx16 100ns 120ns EM7164SU16 DIE 8INCH T&R	PDF
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR TECHNICAL DATA KTA501U EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • A super-minimold package houses 2 transistor. • Excellent temperature response between these 2 transistor. • High pairing property in hFE.	OCR Scan	KTA501U	PDF
2SA1928 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1928 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION _ SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1928 is a silicon PNP epitaxial type transistor. It is designed for low noise differential amplify application.	OCR Scan	2SA1928 2SA1928 -100V 270Hz 270Hz	PDF
3055 transistor Abstract: 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055 Text: 2SC T> m flS3SbOS D004T11 * mZIZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful A F Output Stages 2 N 3055 - SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for	OCR Scan	D004T11 Q62702-U58 B--01 fl23Sb05 A23SbDS B--03 3055 transistor 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055	PDF
Untitled Abstract: No abstract text available Text: OLE D N AUER PHILIPS/DISCRETE 86D 01878 D r - ^^53=131 DD1411L t> jt 1 BLY87A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile and m ilitary transmitters with a supply voltage o f 13,5 V . The transistor is resistance stabilized and is guaranteed to	OCR Scan	DD1411L BLY87A	PDF
transistor marking 2A H Abstract: mitsubishi vcb 2sc4357 mitsubishi symbol marking La 4108 Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC4357 FOR HIGH CURRENT DRIVE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4357 is a silicon NPN epitaxial type transistor designed for high collector current, for high voltage.	OCR Scan	2SC4357 2SC4357 500mW transistor marking 2A H mitsubishi vcb mitsubishi symbol marking La 4108	PDF
Untitled Abstract: No abstract text available Text: FZ 500 R 12 KF Therm ische Eigenschaften Transistor Transistor Elektrische Eigenschaften Electrical properties H ö c h s tz u lä s s iq e W e rte VcES M axim u m rated va lu e s 1200 V 500 A Therm al properties R thjc DC, pro B a u ste in / p e r m od u le	OCR Scan		PDF

Untitled Abstract: No abstract text available Text: Philips Semiconductors Preliminary Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	BUK451-100A/B -100B T0220AB	PDF
ULN2054A Abstract: 8035A ULN-2031 Independent Transistor Array Text: SPR AGUE /S EN IC ON D GROUP ^3 8514 0 19 SPRAGUE. D S E M I C O N D S / ICS • ÛS1B05G □□□3ûlû T ■ 93D 0 3 8 1 8 2> ~7~~V2-2S~ ULN-2054A TRANSISTOR ARRAY ULN-2054A TRANSISTOR ARRAY Dual Independent Differential Amplifiers T HE ULN-2054A is a transistor array consisting	OCR Scan	S1B05G ULN-2054A ULN-2031A LN-2086A, ULS-2045H ULS-2083H, ULN2054A 8035A ULN-2031 Independent Transistor Array	PDF
lj11 Abstract: No abstract text available Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology, the device features very	OCR Scan	BUK9830-30 lj11	PDF
Response AA0482 Abstract: 49/Response AA0482 Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this	OCR Scan	DSP56303 Response AA0482 49/Response AA0482	PDF
25r06 Abstract: No abstract text available Text: FF 25 R 06 KF 2 Therm ische Eigenschaften Transistor Transistor R thjc Elektrische Eigenschaften Electrical properties RthCK H ö ch s tz u lä s s ige W e rte V ces M axim u m rated va lu e s 600 V 25 A lc Thermal properties °C /W 0,5 DC, p ro B a u ste in / p e r m od u le	OCR Scan	FFZSR06KF2 25r06	PDF
MP6004 Abstract: NPN Darlington Transistor avw26 Text: TOSHIBA MP6004 TOSHIBA POWER TRANSISTOR MODULE SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 6 IN 1 MP6004 INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 58 + 1 40 + 0.3 Package with Heat Sink Isolated to Lead (SIP 14 Pin)	OCR Scan	MP6004 V1500 --100A//iS MP6004 NPN Darlington Transistor avw26	PDF
SL 100 NPN Transistor Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor Text: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE	OCR Scan	THC-2484 THC-4123 THC-4124 THC-4125 THC-4126 THC-40D4 THC-40D5 THC-41D4 THC-41D5 SL 100 NPN Transistor bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE DbE D • PowerMOS transistor ODlHbflT 4 ■ BUZ83A T-Z°l-1 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ83A T-39-11 DD14fc bbS3T31	PDF
Untitled Abstract: No abstract text available Text: KS324520 Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S iflQ lB D s r lin Q t O H Transistor Module 200 Amperes/600 Volts O U T LIN E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power	OCR Scan	KS324520 Amperes/600	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • NF 1.5 dB TYP. f= 1.0 GHz * MAG 14 dB TYP. f= 1.0 GHz PACKAGE DIMENSIONS Units: mm ABSOLUTE MAXIMUM RATINGS T a = 25 °C Collector to Base Voltage	OCR Scan	2SC2351	PDF

TRANSISTOR TZ Search Results

TRANSISTOR TZ Result Highlights (5)

TRANSISTOR TZ Datasheets Context Search

MN1280

oz960

rjh3047

transistor b 595

transistor c36

EM7164SU16

transistor j6

EM7164SU16

Untitled

2SA1928

3055 transistor

Untitled

transistor marking 2A H

Untitled

Untitled

ULN2054A

lj11

Response AA0482

25r06

MP6004

SL 100 NPN Transistor

Untitled

Untitled

Untitled