02D2G
Abstract: MJD18002D2T4G 18002d2 MJD18002D2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12
Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot
|
Original
|
MJD18002D2
MJD18002D2
MJD18002D2/D
02D2G
MJD18002D2T4G
18002d2
MJD18002D2T4
MPF930
MTP8P10
MJD18002D2 Motorola
MTP12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot
|
Original
|
MJD18002D2
MJD18002D2
MJD18002D2/D
|
PDF
|
02D2G
Abstract: 18002d2 motorola transistor dpak marking MJD18002D2 MJD18002D2T4 MJD18002D2T4G MPF930 MTP8P10 transistor j 127
Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot
|
Original
|
MJD18002D2
MJD18002D2
MJD18002D2/D
02D2G
18002d2
motorola transistor dpak marking
MJD18002D2T4
MJD18002D2T4G
MPF930
MTP8P10
transistor j 127
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PNP small signal transistor BCX17 Small load switch transistor with high gain and Low saturation voltage. Features 1 High gain and low saturation voltage. (2) Ideal for small load switching applications. Complements the BCX19 Dimensions (Unit : mm)
|
Original
|
BCX17
BCX17
R1120A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PNP small signal transistor BCX17 Small load switch transistor with high gain and Low saturation voltage. Features 1 High gain and low saturation voltage. (2) Ideal for small load switching applications. Complements the BCX19 Dimensions (Unit : mm)
|
Original
|
BCX17
BCX17
R1120A
|
PDF
|
18002D2
Abstract: No abstract text available
Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network http://onsemi.com The MJD18002D2 is a state−of−the−art high speed, high gain
|
Original
|
MJD18002D2
MJD18002D2
18002D2
|
PDF
|
dpak 369C
Abstract: No abstract text available
Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network http://onsemi.com The MJD18002D2 is a state−of−the−art high speed, high gain
|
Original
|
MJD18002D2
MJD18002D2/D
dpak 369C
|
PDF
|
MJD18002D2
Abstract: MJD18002D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 MJD18002D2-1
Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector–Emitter Diode and Built–In Efficient Antisaturation Network http://onsemi.com The MJD18002D2 is a state–of–the–art high speed, high gain
|
Original
|
MJD18002D2
MJD18002D2
r14525
MJD18002D2/D
MJD18002D2T4
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
SMD310
MJD18002D2-1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BUL642D2 High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network The BUL642D2 is a state−of−the−art High Speed High Gain Bipolar Transistor H2BIP . Tight dynamic characteristics and lot to
|
Original
|
BUL642D2
BUL642D2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current
|
OCR Scan
|
2SC5507
2SC5507-T2
Rn/50
P13864E
13864E
J1V0DS00
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BUL642D2 High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network The BUL642D2 is a state−of−the−art High Speed High Gain Bipolar Transistor H2BIP . Tight dynamic characteristics and lot to
|
Original
|
BUL642D2
r14525
BUL642D2/D
|
PDF
|
10IF0
Abstract: No abstract text available
Text: BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2G is state−of−art High Speed High gain BiPolar transistor H2BIP . High dynamic characteristics and lot−to−lot
|
Original
|
BUL45D2G
BUL45D2/D
10IF0
|
PDF
|
BUL642D2
Abstract: BUL642D2G
Text: BUL642D2 High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network http://onsemi.com 3 AMPERES 825 VOLTS 75 WATTS POWER TRANSISTOR The BUL642D2 is a state−of−the−art High Speed High Gain
|
Original
|
BUL642D2
BUL642D2
BUL642D2/D
BUL642D2G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BUL642D2 High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network http://onsemi.com 3 AMPERES 825 VOLTS 75 WATTS POWER TRANSISTOR The BUL642D2 is a state−of−the−art High Speed High Gain
|
Original
|
BUL642D2
BUL642D2
BUL642D2/D
|
PDF
|
|
|
vce 1200 and 5 amps npn transistor to 220 pack
Abstract: BUL45D2 BUL45D2G MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Text: BUL45D2 High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2 is state−of−art High Speed High gain BiPolar transistor H2BIP . High dynamic characteristics and lot−to−lot
|
Original
|
BUL45D2
BUL45D2
BUL45D2/D
vce 1200 and 5 amps npn transistor to 220 pack
BUL45D2G
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2G is state−of−art High Speed High gain BiPolar transistor H2BIP . High dynamic characteristics and lot−to−lot
|
Original
|
BUL45D2G
BUL45D2G
BUL45D2/D
|
PDF
|
BCX17
Abstract: BCX19 T116
Text: BCX17 Transistors PNP small signal transistor BCX17 Small load switch transistor with high gain and Low saturation voltage. zFeatures 1 High gain and low saturation voltage. 2) Ideal for small load switching applications. 3) Complements the BCX19. zDimensions Unit : mm)
|
Original
|
BCX17
BCX19.
BCX17
BCX19
T116
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2G is state−of−art High Speed High gain BiPolar transistor H2BIP . High dynamic characteristics and lot−to−lot
|
Original
|
BUL45D2G
BUL45D2/D
|
PDF
|
NESG2046M33
Abstract: NESG2107M33
Text: PRELIMINARY DATA SHEET NPN SiGe RF TWIN TRANSISTOR µPA880TS NPN SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, NESG2107M33) Q1: High gain SiGe transistor
|
Original
|
PA880TS
NESG2046M33,
NESG2107M33)
S21e2
NESG2046M33
NESG2107M33
NESG2046M33
NESG2107M33
|
PDF
|
2SC5435
Abstract: NESG2107M33 NEC JAPAN IC xf 2 6-pin marking XF UPA867TS
Text: DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA867TS NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) FEATURES • 2 different built-in transistors (2SC5435, NESG2107M33) Q1: High gain transistor
|
Original
|
PA867TS
2SC5435,
NESG2107M33)
S21e2
2SC5435
NESG2107M33
2SC5435
NESG2107M33
NEC JAPAN IC
xf 2 6-pin
marking XF
UPA867TS
|
PDF
|
2SC5436
Abstract: NESG2107M33
Text: DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA868TS NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) FEATURES • 2 different built-in transistors (2SC5436, NESG2107M33) Q1: High gain transistor
|
Original
|
PA868TS
2SC5436,
NESG2107M33)
S21e2
2SC5436
NESG2107M33
2SC5436
NESG2107M33
|
PDF
|
Untitled
Abstract: No abstract text available
Text: fìjUeJc&gct - / PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current
|
OCR Scan
|
2SC5507
2SC5507
2SC5507-T2
|
PDF
|
transistor NEC B 617
Abstract: nec k 3115 NEC k 3115 transistor 2SC3357 2SC5336 2SC5336-T1 4435 power ic NEC 718 P1093 NEC B 617
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5336 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • High gain: S21e = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz 2 • 4-pin power minimold package with improved gain from the 2SC3357
|
Original
|
2SC5336
2SC3357
2SC5336-T1
transistor NEC B 617
nec k 3115
NEC k 3115 transistor
2SC3357
2SC5336
2SC5336-T1
4435 power ic
NEC 718
P1093
NEC B 617
|
PDF
|
BD239C
Abstract: BD240C JESD97 transistor marking 1a
Text: BD239C NPN power transistor Features • NPN transistor Applications ■ General purpose switching and amplifier transistor Description 1 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance
|
Original
|
BD239C
BD240C.
O-220
BD239C
BD240C
JESD97
transistor marking 1a
|
PDF
|
