Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA124EET1 This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network
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LDTA124EET1
SC-89
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Untitled
Abstract: No abstract text available
Text: BUD620 wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RBSOA
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BUD620
BUD620-SMD
20-Jan-99
BUD620
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transistor WMM
Abstract: No abstract text available
Text: BUD744 wMm? Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RBSOA
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OCR Scan
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BUD744
BUD744
BUD744-SMD
20-Jan-99
transistor WMM
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PDF
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Untitled
Abstract: No abstract text available
Text: BUD600 wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RBSOA
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OCR Scan
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BUD600
BUD600-SMD
20-Jan-99
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Untitled
Abstract: No abstract text available
Text: BUD630 wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • • • • HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation
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OCR Scan
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BUD630
BUD630-SMD
20-Jan-99
BUD630
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Untitled
Abstract: No abstract text available
Text: BUD725D wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Monolithic integrated C-E-free-wheel diode • Very low switching losses • • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation HIGH SPEED technology
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OCR Scan
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BUD725D
BUD725D
14-Jul-98
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transistor smd yw
Abstract: No abstract text available
Text: BUD616A wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • • • • HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation
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OCR Scan
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BUD616A
BUD616A-SMD
20-Jan-99
BUD616A
transistor smd yw
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PDF
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Untitled
Abstract: No abstract text available
Text: BUD7312 wmm t Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • • • • HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation
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BUD7312
BUD7312
22-Jul-99
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PDF
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A65 smd transistor
Abstract: transistor smd za
Text: BUD700D wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Monolithic integrated C-E-free-wheel diode • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate •
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BUD700D
BUD700D
20-Jan-99
A65 smd transistor
transistor smd za
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transistor SMD wm
Abstract: No abstract text available
Text: BUD636A wm m t Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RBSOA
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OCR Scan
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BUD636A
BUD636A
20-Jan-99
transistor SMD wm
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Untitled
Abstract: No abstract text available
Text: BUF646 • BUF646A wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses • Very low dynamic saturation
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OCR Scan
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BUF646
BUF646A
20-Jan-99
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cd 1191 cb
Abstract: CD 1691 CB
Text: wm m t BFP67/BFP67R/BFP67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain per
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BFP67/BFP67R/BFP67W
BFP67
BFP67R
BFP67W
20-Jan-99
cd 1191 cb
CD 1691 CB
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transistor marking WV2
Abstract: No abstract text available
Text: wmmt B FQ67/B FQ67 R/B FQ67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated
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FQ67/B
FQ67W
BFQ67
BFQ67R
BFQ67W
20-Jan-99
transistor marking WV2
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transistor j6
Abstract: J122 transistor J6 transistor transistor j122 j48 transistor transistor 1015 J122 J122 npn PH2731-75L PACIFIC 1015
Text: an = AMP wmDanv 5 = Radar Pulsed Power Transistor, 75W, 300~s Pulse, 10% Duty PI-f2731 -75L 2.7 - 3.1 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry Diffused Emitter Ballasting Resistors
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PI-f2731
PH2731-75L
transistor j6
J122 transistor
J6 transistor
transistor j122
j48 transistor
transistor 1015
J122
J122 npn
PH2731-75L
PACIFIC 1015
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Untitled
Abstract: No abstract text available
Text: BUD742 wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RB S 0 A
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BUD742
BUD742
BUD742-SMD
20-Jan-99
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2N2369A
Abstract: 2n2369a philips TU-T2
Text: N AMER PHILIPS/DISCRETE bTE bbSBTBl DDEÔDT? ?Db WM APX 11 2N2369A | i SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-18 metal envelope primarily intended for high-speed saturated switching and high frequency amplifier applications. QUICK REFERENCE DATA
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bbS3T31
2N2369A
10fiF
2N2369A
2n2369a philips
TU-T2
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Untitled
Abstract: No abstract text available
Text: A N AMER PHILIPS/DISCRETE □bE D WM bb53T31 00150b! ? • MRB12350YR MAINTENANCE TYPE for new design use M RB11350Y X ' 33 - I S' PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in
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bb53T31
00150b!
MRB12350YR
RB11350Y)
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PDF
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BUK445-100A
Abstract: 1E05 BUK445 BUK445-100B
Text: PHILIPS INTERNATIONAL bSE D WM 7110flSb O O b a W Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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OCR Scan
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7110flSb
BUK445-1OOA/B
-SOT186
BUK445
-100A
-100B
BUK445-100A
1E05
BUK445-100B
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PDF
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BUK445-100A
Abstract: BUK445-100B BT diode BUK445
Text: PHILIPS INT ERNATIONAL bSE D WM 7110flSb O O b a W Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched M ode Power Supplies
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BUK445-100A/B
-SOT186
BUK445-100A
BUK445-100B
BT diode
BUK445
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Silicon Transistor Corp
Abstract: 2950 transistor
Text: SILICON TRANSISTOR CORP SbE J> WM Ô2S4022 DOGG^fi fll? « S T C SILICON TRANSISTOR CORPORATION I Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 500 V o lts 0.3 Ohms TECHNICAL DATA SHEET ABSOLUTE MAXIMUM RATINGS
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2S4022
SNF40503
BreM0-078
ST102
MIL-S-19500
Silicon Transistor Corp
2950 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bbS3^31 DD315^I1 3bT WMAPX Product specification PNP 4 GHz wideband transistor BFQ54T N A PIER PHILIPS/DISCRETE b^E J> PINNING DESCRIPTION PNP transistor in a plastic SOT37 package. PIN 1 base It is primarily intended for use in MATV and microwave amplifiers
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DD315
BFQ54T
BFQ34T.
0031ST4
BB339
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2SC4867
Abstract: 16T MARKING 2SC4871 FH201 ZS21 TA-1315 1hz OUTPUT 7CJE
Text: Ordering number:ENN6117 NPN Epitaxial Planar Silicon Composite Transistor FH201 SAÈÈYOI VCO OSC Circuit Applications Features Package Dimensions • C om p osite type w ith a buffer transistor 2 S C 4 8 7 1 and a oscillator transistor (2 S C 4 8 6 7 ) contained in
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ENN6117
FH201
2SC4871)
2SC4867)
FH20I
2SC4871
2SC4867,
FH201]
7117D7L
0D544b7
2SC4867
16T MARKING
FH201
ZS21
TA-1315
1hz OUTPUT
7CJE
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PDF
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2N3054
Abstract: C4125 4392n 3054 booc power transistors dc-27 transistor 2n3054
Text: 2 N 3054 NPN Power transistor for AF amplifier and switching applications 2 N 3 0 5 4 is a single-diffused N P N silicon transistor in a T O -6 6 case. The collector is electrically connected to the case. The transistor 2 N 3 0 5 4 is particularly suitable
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2N3054
Q62702-U
Q62901-B
Q62901-B11
200mA
160mA
120mA
100mA
C4125
4392n
3054
booc power transistors
dc-27
transistor 2n3054
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PDF
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transistor D 4515
Abstract: 100-P BUK556-60A A1730
Text: PHILIPS INTERNATIONAL bSE J> B 7110fl2b □□b42Sb Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.
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OCR Scan
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BUK556-60A
PINNING-T0220AB
-ID/100
transistor D 4515
100-P
A1730
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