AN3025
Abstract: transistor working principle tinning METCAL MX-500 circuit free transistor SN62 SN63 GC Electronics 108109 metcal transistor free
Text: Application Note AN3025 Transistor Mounting and Soldering Rev. 3 Introduction There are three basic steps recommended to mount and solder RF power transistors into a circuit. Solder pre-tin the transistor leads Mount the transistor Solder the transistor leads to the circuit trace
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AN3025
AN3025
transistor working principle
tinning
METCAL MX-500 circuit
free transistor
SN62
SN63
GC Electronics 108109
metcal
transistor free
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advantage and disadvantage of igbt
Abstract: HFBR1531Z HFBR-1522ETZ
Text: Galvanic isolation for IGBT-Driver White Paper By Michael Wappmannsberger Usually, an IGBT Insulated Gate Bipolar Transistor is described in the following way: "An IGBT is a combination of a field effect transistor and a bipolar transistor where an N-channel FET controls a bipolar transistor". Although this sentence
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AFBR-0546Z
AFBR-0548Z
HFBR-0543Z
AV02-3407EN
AFBR-1624Z/1629Z
AFBR-2624Z/2529Z
AV02-2699EN
HFBR-0500ETZ
IEC60664-1
AV02-3500EN
advantage and disadvantage of igbt
HFBR1531Z
HFBR-1522ETZ
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Untitled
Abstract: No abstract text available
Text: RN2907FS~RN2909FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2907FS,RN2908FS,RN2909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.
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RN2907FS
RN2909FS
RN2908FS
RN1907FS
RN1909FS
RN2908FSesented
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Untitled
Abstract: No abstract text available
Text: RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1907FS, RN1908FS, RN1909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.
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RN1907FS
RN1909FS
RN1907FS,
RN1908FS,
RN2907FS
RN2909FS
RN1908Fesented
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Untitled
Abstract: No abstract text available
Text: RN2967FS~RN2969FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2967FS,RN2968FS,RN2969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.
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RN2967FS
RN2969FS
RN2968FS
RN2969FS
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Untitled
Abstract: No abstract text available
Text: RN4984FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4984FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.
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RN4984FS
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RN1908FS
Abstract: RN1907FS RN1909FS RN2907FS RN2909FS f7 transistor transistor -25 f7
Text: RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1907FS, RN1908FS, RN1909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.
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RN1907FS
RN1909FS
RN1907FS,
RN1908FS,
RN1908FS
RN1907FS
RN1908FS
RN1909FS
RN2907FS
RN2909FS
f7 transistor
transistor -25 f7
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RN1907FS
Abstract: RN1909FS RN2907FS RN2908FS RN2909FS
Text: RN2907FS~RN2909FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2907FS,RN2908FS,RN2909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.
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RN2907FS
RN2909FS
RN2908FS
RN1907FS
RN1909FS
RN2908FS
RN2907FS
RN1909FS
RN2909FS
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Untitled
Abstract: No abstract text available
Text: RN1912AFS, RN1913AFS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN1912AFS, RN1913AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces the parts count.
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RN1912AFS,
RN1913AFS
RN2912AFS/RN2913AFS
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RN1102FS
Abstract: RN2111FS RN49P1FS 25Q2
Text: RN49P1FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) Preliminary RN49P1FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces the parts count.
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RN49P1FS
RN1102FS
RN2111FS
RN49P1FS
25Q2
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RN1544
Abstract: No abstract text available
Text: RN1544 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1544 For use in Muting and Switching Applications. • Emitter-base voltage is high: VEBO = 25 V (max) • Incorporating a bias resistor into a transistor reduces parts count.
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RN1544
RN1544
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Untitled
Abstract: No abstract text available
Text: RN4985FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4985FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count.
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RN4985FS
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RN4985FS
Abstract: No abstract text available
Text: RN4985FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4985FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count.
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RN4985FS
RN4985FS
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Untitled
Abstract: No abstract text available
Text: RN1544 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1544 For use in Muting and Switching Applications Unit: mm • Emitter-base voltage is high: VEBO = 25 V (max) • Incorporating a bias resistor into a transistor reduces parts count.
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RN1544
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Untitled
Abstract: No abstract text available
Text: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications 0.33±0.05 0.05 M A • 2.4±0.1 ○ Multi-chip discrete device; built-in PNP Transistor for
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TPCP8F01
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RN1544
Abstract: MARKING 44a
Text: RN1544 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1544 For use in Muting and Switching Applications Unit: mm • Emitter-base voltage is high: VEBO = 25 V (max) • Incorporating a bias resistor into a transistor reduces parts count.
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RN1544
RN1544
MARKING 44a
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Untitled
Abstract: No abstract text available
Text: RN1544 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1544 For use in Muting and Switching Applications. • • Unit: mm Emitter-base voltage is high: VEBO = 25 V (max) Incorporating a bias resistor into a transistor reduces parts count.
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RN1544
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Untitled
Abstract: No abstract text available
Text: RN1544 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1544 For use in Muting and Switching Applications. • · Unit: mm Emitter-base voltage is high: VEBO = 25 V (max) Incorporating a bias resistor into a transistor reduces parts count.
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RN1544
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AN1232
Abstract: RF Transistor Selection RF POWER TRANSISTOR NPN USE OF TRANSISTOR SD2921
Text: AN1232 Application note Ruggedness improvement of RF DMOS devices Introduction RF amplifiers often experience impedance mismatch between output and load. Such an impedance mismatch generates a reflected wave towards the RF power transistor, making a much more stringent working environment for the transistor. Working conditions grow critical
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AN1232
AN1232
RF Transistor Selection
RF POWER TRANSISTOR NPN
USE OF TRANSISTOR
SD2921
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017g
Abstract: TPCP8H01 8H01
Text: TPCP8H01 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type TPCP8H01 HIGH-SPEED SWITCHING APPLICATIONS LORD SWITCHING APPLICATIONS 0.33±0.05 0.05 M A 2.4±0.1 STROBE FLASH APPLICATIONS ・Multi-chip discrete device; built-in NPN transistor for main switch and
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TPCP8H01
017g
TPCP8H01
8H01
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Untitled
Abstract: No abstract text available
Text: TPCP8H01 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type TPCP8H01 HIGH-SPEED SWITCHING APPLICATIONS LORD SWITCHING APPLICATIONS 0.33±0.05 0.05 M A 2.4±0.1 STROBE FLASH APPLICATIONS ・Multi-chip discrete device; built-in NPN transistor for main switch and
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TPCP8H01
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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3Kp Transistor
Abstract: BCV62A two transistor forward BCV61 BCV62 BCV62B BCV62C 3LP Transistor
Text: fc.bS3T31 002M547 GEb H A P X N AUER PHILIPS/DISCRETE BCV62; 62A BCV62B; 62C b7E D SILICON PLANAR EPITAXIAL TRANSISTOR Double p-n-p transistor, in SO T-143 plastic envelope, designed for use in applications where the working point must be independent o f temperature.
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bb53T31
002M547
BCV62;
BCV62B;
OT-143
BCV61.
bb53R31
Q024550
3Kp Transistor
BCV62A
two transistor forward
BCV61
BCV62
BCV62B
BCV62C
3LP Transistor
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Untitled
Abstract: No abstract text available
Text: • bbSBTBl 00E4S43 460 ■ A P X N AMER PHILIPS/DISCRETE BCV61; 61A BCV61B: 61C b7E D SILICON PLANAR EPITAXIAL TRANSISTOR Double n-p-n transistor, in SOT-143 plastic envelope, designed for use in applications where the working point must be independent o f temperature.
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00E4S43
BCV61;
BCV61B:
OT-143
BCV62.
BCV61B
BCV61A
BCV61B;
BCV61
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