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    TRANSISTOR WT9 Search Results

    TRANSISTOR WT9 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR WT9 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Mosfet FDD

    Abstract: CBVK741B019 F63TNR FDD6680 MTD3055V
    Text: MTD3055V N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


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    PDF MTD3055V Mosfet FDD CBVK741B019 F63TNR FDD6680 MTD3055V

    DSAS 13-0

    Abstract: d92 02 a9hv
    Text: IRFR9024 P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


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    PDF IRFR9024 DSAS 13-0 d92 02 a9hv

    a9hv

    Abstract: No abstract text available
    Text: MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


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    PDF MTD2955V a9hv

    MTD3055V

    Abstract: fairchild mosfets
    Text: MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


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    PDF MTD3055V* MTD3055V fairchild mosfets

    a7w transistor

    Abstract: a7w 57 transistor a7w
    Text: MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


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    PDF MTD3055V* a7w transistor a7w 57 transistor a7w

    IRFR9024

    Abstract: No abstract text available
    Text: IRFR9024* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


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    PDF IRFR9024* IRFR9024

    MTD2955

    Abstract: CBVK741B019 F63TNR FDD6680 MTD2955V
    Text: MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


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    PDF MTD2955V MTD2955 CBVK741B019 F63TNR FDD6680 MTD2955V

    MTD2955V

    Abstract: transistor WT9 a9hv
    Text: MTD2955V* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


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    PDF MTD2955V* MTD2955V transistor WT9 a9hv

    Untitled

    Abstract: No abstract text available
    Text: IRFR9024* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


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    PDF IRFR9024 IRFR9024*

    Untitled

    Abstract: No abstract text available
    Text: MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


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    PDF MTD3055V MTD3055V*

    Untitled

    Abstract: No abstract text available
    Text: MTD2955V* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


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    PDF MTD2955V MTD2955V*

    a9hv

    Abstract: MTD3055VL
    Text: MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional


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    PDF MTD3055VL a9hv MTD3055VL

    3055VL

    Abstract: a9hv transistor WT9 MTD3055VL u6 transistor AYRA
    Text: MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional


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    PDF MTD3055VL MTD3055VL O-252 3055VL a9hv transistor WT9 u6 transistor AYRA

    D665

    Abstract: SI4532DY w992
    Text: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very


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    PDF Si4532DY D665 w992

    Untitled

    Abstract: No abstract text available
    Text: Si4532DY Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very


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    PDF Si4532DY

    Untitled

    Abstract: No abstract text available
    Text: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very


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    PDF Si4532DY

    a7w 57

    Abstract: a7w transistor
    Text: MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features • 12 A, 60 V. RDS ON = 0.18 Ω @ VGS = 5 V This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC


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    PDF MTD3055VL a7w 57 a7w transistor

    NTC Thermistor mf52

    Abstract: NTC mf52 103
    Text: ACE4703 Fully 5A, 3cell Standalone Li-ion Battery Charger Description The ACE4703 is a PWM switch-mode lithium ion battery charger controller for 3 cell li-ion battery in a small package using few external components. The ACE4703 is specially designed for charging lithium ion batteries with constant current and constant


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    PDF ACE4703 ACE4703 NTC Thermistor mf52 NTC mf52 103

    Untitled

    Abstract: No abstract text available
    Text: ACE4704 Fully 5A, 4cell Standalone Li-ion Battery Charger Description The ACE4704 is a PWM switch-mode lithium ion battery charger controller for 4 cell li-ion battery in a small package using few external components. The ACE4704 is specially designed for charging lithium ion batteries with constant current and constant


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    PDF ACE4704 ACE4704

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


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    PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    ao3407a

    Abstract: No abstract text available
    Text: ACE4705 5A, Multi-Chemistry Battery Charger Description The ACE4705 is a PWM switch-mode battery charger controller for 1 or multi-cell lithium ion batteries or LiFePO4 batteries in a small package using few external components. The ACE4705 is specially designed for charging lithium ion batteries or LiFePO4 batteries with constant


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    PDF ACE4705 ACE4705 ao3407a

    Untitled

    Abstract: No abstract text available
    Text: ACE4717 5A Lead-Acid Battery Charger IC Description The ACE4717 is a PWM switch-mode battery charger controller for lead-acid battery in a small package using few external components. The ACE4717 is specially designed for charging lead-acid battery with trickle charge, constant current charge, over-charge and float charge mode. In over-charge and float


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    PDF ACE4717 ACE4717

    "x-ray detector"

    Abstract: WT9051 07HEX
    Text: WT9051 Data Sheet REV1.0 PIN DESCRIPTION Pin No. Pin Name Description 1 GND1 The main ground pin for the 2 vertical circuit and the I C bus circuit. 2 VOSC Connect the capacitor for oscillation of vertical saw wave. Please connect near pin, because series resistance


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    PDF WT9051 250uA 30-pin "x-ray detector" WT9051 07HEX

    sgf24

    Abstract: SGF12 cross mold sgf9 SGF23
    Text: SA0YO GaAs FET Series ,tJc, G a A s M E S F e a t u r e s + F E T S o r - i e s N-channel GaAs MES Field Effect Transistor Mold Package-Owing to the Cross Mold Technology, this product can maintain the same performance as the ceramic package. L o c a l ♦


    OCR Scan
    PDF SGF12 SGF23 SGF24 2SK1646 2SK1646, SGF23) WT940629TR sgf24 SGF12 cross mold sgf9 SGF23