LB 1639
Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
Text: SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz
|
Original
|
PDF
|
UPA801T
NE856
100mA
UPA801T
24-Hour
LB 1639
transistor Bf 444
transistor 4341
transistor BF 258
transistor BF 236
|
M38527
Abstract: M38527/2-05D M38527/01-036D A55485/02-032D M38527/06-022D M38527/3-01D M38527/02-001D M38527/02-005D M38527/03-015N M38527/1-030D
Text: molded power transistor mounts Material Specifications: Nylon, per ASTM D 4066 PA111 UL Rated 94V-2 Oxygen Rating Index: Over 28% Standard Drawing Tolerances: unless otherwise indicated Fractions: +_ 1/64 (0.4) .XX = +_ 0.01 (0.25) + _ 0.10 (2.5) .X = .XXX = +_ 0.005 (0.13)
|
Original
|
PDF
|
PA111
O-202,
O-220
HC-18/U,
HC-43/U
HC-49/U
CI-192-028
M38527
M38527/2-05D
M38527/01-036D
A55485/02-032D
M38527/06-022D
M38527/3-01D
M38527/02-001D
M38527/02-005D
M38527/03-015N
M38527/1-030D
|
BFG134
Abstract: BJE 247
Text: b t . 5 3 ^3 1 Philips Semiconductors D D 3131S 36 □ M A P X Product specification NPN 7 GHz wideband transistor ^ BFG134 N AUER PHILIPS/DISCRETE b^E D PINNING DESCRIPTION NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for
|
OCR Scan
|
PDF
|
3131S
BFG134
OT103
OT103.
BFG134
BJE 247
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE ]> bbS3^31 Q03D70S 77fl W A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in
|
OCR Scan
|
PDF
|
Q03D70S
O220AB
BUK457-500B
|
Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/MSCRETE b^E » • bbS 3131 0 0 2 ^ 1 1 0 'lb? « A P X BLV90 _ J V U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • diffused emitter-ballasting resistors for an optimum temperature profile
|
OCR Scan
|
PDF
|
BLV90
OT-172)
bb53R31
|
2SK659
Abstract: TC-6071
Text: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #
|
OCR Scan
|
PDF
|
2SK659
2SK659Ã
2SK659
TC-6071
|
philips bfq
Abstract: BFQ253A BFQ233 BFQ233A BFQ253
Text: Philips Semiconductors bb.53131 003173b 23T IB A P X PNP 1 GHz video transistor Product specification BFQ253; BFQ253A N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D • PINNING PNP silicon epitaxial transistor In a SOT5 TO-39 envelope with emitter-ballasting resistors and a
|
OCR Scan
|
PDF
|
03173b
BFQ253;
BFQ253A
BFQ233
BFQ233A
fcj53131
BFQ253A
philips bfq
BFQ253
|
2N3137
Abstract: pbgi 2n 3137 CE020
Text: 2N 3137 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S IL IC IU M . PLAN A R E P IT A X IA L Class-CVH F Power amplifier to 250 MHz A m plifica te u r de puissance VHF en classe - C jusquà 250 MHz v CEO 20 V fT 500 MHz min '’ out 400 mW min.
|
OCR Scan
|
PDF
|
|
LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
|
OCR Scan
|
PDF
|
3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
|
IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
|
OCR Scan
|
PDF
|
|
1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: b7E D • bb53=i31 D0E3R3S 04D H A P X BST70A N AMER PHILIPS/DISCRETE y v N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers.
|
OCR Scan
|
PDF
|
BST70A
bb53331
D023T3A
|
BUK444-500B
Abstract: transistor npc 231 d0305 transistor BUK444-500B Q03DS3 PINNING-SOT186
Text: AUER P HI LIPS/DISCRETE b'iE » bbSB'îBl D 0 3 G 535 b 43 • A P X Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
|
OCR Scan
|
PDF
|
DD3GS35
BUK444-500B
PINNING-SOT186
transistor npc 231
d0305
transistor BUK444-500B
Q03DS3
|
2SC2498
Abstract: No abstract text available
Text: TOSHIBA 2SC2498 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2498 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION MAXIMUM RATINGS Ta = 4.7 M A X . , 5.1 M A X 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage
|
OCR Scan
|
PDF
|
2SC2498
2SC2498.
2SC2498
|
|
|
BSY79
Abstract: transistor 746 nixie tubes h21E1 ti c11b
Text: BSY 79 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S IL IC IU M , P LAN A R E P IT A X IA L Low current switching Commutation faible courant "Nixie" driver 120 V v CEO Commande des tubes "N ix ie ” 1 mA 30 h21E <1 v min V CEsat 0,3 V to 0,2 mA
|
OCR Scan
|
PDF
|
BSY79
BSY79
transistor 746
nixie tubes
h21E1
ti c11b
|
sem 2106
Abstract: bux13
Text: I MOTORGLA SC X S T R S /R 12E D F I k 3 b7 2 S4 0 0 0 4 =52*1 3 | MOTOROLA SEM ICO N DUCTO R BUX13 TECHNICAL DATA 15 AMPERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high speed, high voltage, high power applications.
|
OCR Scan
|
PDF
|
BUX13
AN415A)
sem 2106
bux13
|
BFR134
Abstract: No abstract text available
Text: Philips Semiconductors bbS3T31 0 D 3 n i 2 tit7 M A P X Product specification NPN 7 GHz wideband transistor •■■■ ■■■■■■■. DESCRIPTION N BFR134 AnER P H IL IP S /D IS C R E T E B - b lE PINNING NPN transistor in a plastic SOT37
|
OCR Scan
|
PDF
|
bbS3T31
BFR134
BFR134
|
W1p TRANSISTOR
Abstract: transistor w1P w1p npn SOT23 W1P W1P 59 transistor w1p 60 W1P 51 W1p 69 W1P 66 transistor W1P 50
Text: Philips Sem iconductors 1^53131 0025366 774 M A P X AMER P H I L I P S / D I S C R E T E Product specification b?E PNP 5 GHz wideband transistor DESCRIPTION ^ BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily Intended for use in RF
|
OCR Scan
|
PDF
|
BFT92
BFR92
BFR92A.
W1p TRANSISTOR
transistor w1P
w1p npn
SOT23 W1P
W1P 59 transistor
w1p 60
W1P 51
W1p 69
W1P 66 transistor
W1P 50
|
Untitled
Abstract: No abstract text available
Text: I Ordering number : EN ¡K4916 ¡ CMOS LSI LC35256A, AS, AM-70/85/10 256K 32768 words x 8 bits^SRAM with OE and CE Control Pins Preliminary Overview The LC35256A, AS, and AM aie 32768 words x 8-bils asynchronous silicon gate CMOS SRAMs. These products feature a 6-transistor full-CM OS memory c e ll, low
|
OCR Scan
|
PDF
|
K4916
LC35256A,
AM-70/85/10
5256A
LC35256A
AM-70/85/10
|
MGF4714AP
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4714AP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION The MGF4714AP low-noiseHEMT High Electron Mobili ty Transistor is designed for use in X band amplifiers. The plastic mold package offer high cost performance,
|
OCR Scan
|
PDF
|
MGF4714AP
MGF4714AP
12GHz
|
2SJ153
Abstract: No abstract text available
Text: M O S Field Effect Pow er Transistor 2SJ153 P f^ ;U / N ° 7 - M O S FET I i f f l 2SJ153 i, MOS FET T, 5 V H i * IC (c J; è Æ æ œ S O T t ë f r i S i i t X ' f * < , y w / 'i # K, y x ' f •/ f - > 7 f > X f t W B 0 ( T O : mm „ i , f f i - i x T ^ S fc * > ,
|
OCR Scan
|
PDF
|
2SJ153
2SJ153
|
Untitled
Abstract: No abstract text available
Text: Ordering num ber : E N 4916A CMOS LSI LC35256A, AS, AM, AT-70/85/10 No. 4 916A 256K 32768 words x 8 bits SRAM with OE and CE Control Pins I Overview The LC35256A, AS, AM, and AT are 32768 words x 8-bits asynchronous silicon gate CMOS SRAMs. These products feature a 6-transistor full-CMOS memory cell,
|
OCR Scan
|
PDF
|
LC35256A,
AT-70/85/10
LC35256A
LC35256A
|
2SB1291
Abstract: 2SD1720
Text: 2SB1291 h "7 > v 7s $ /T ra n s is to rs X tf 2SB1291 PNP > V =l > S ? > y X 2 Epitaxial Planar PNP Silicon Transistor fiJi;& li^ i# fii# i/ L o w Freq. Power Amp. ^•Jfí'+iíISl/Dimensions Unit: mm 1) VcE(sat) A 'lf t l'o V c E (s a t|= —0.3V (Typ.)
|
OCR Scan
|
PDF
|
2SB1291
2SB1291
2SD1720
|
Untitled
Abstract: No abstract text available
Text: BF980A J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected. Intended for UHF applications, such as UHF television tuners, with 12 V supply voltage and professional communication equipment.
|
OCR Scan
|
PDF
|
BF980A
CA10S
003ST43
bti53t131
0035T44
|
