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    TRANSISTOR X2N Search Results

    TRANSISTOR X2N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR X2N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor marking 44 sot23

    Abstract: 2N7002 MARKING 2N7002 marking 0-115 transistor mos fet 2n7002 05ATC 2N7002 60V SOT-23 X2N7002 sot-23 MARKING bv
    Text: N-Channel Enhancement-Mode MOS Transistor CORPORATION 2N7002 DESCRIPTION ORDERING INFORMATION Calogic’s 2N7002 device type is a vertical DMOS FET transistor housed in a surface mount SOT-23 for micro-assembly applications. The device is an excellent choice for switching applications where breakdown BV and


    Original     		2N7002 2N7002 OT-23 X2N7002 -55oC 150oC transistor marking 44 sot23 2N7002 MARKING marking 0-115 transistor mos fet 2n7002 05ATC 2N7002 60V SOT-23 X2N7002 sot-23 MARKING bv PDF

    TRANSISTOR SMD CODE 6.8

    Abstract: tbd 380 DIODE smd marking Ag MARKING CODE TBD TRANSISTOR SMD MARKING CODE ag SPBX2N60S5 SPPX2N60S5
    Text: SPPX2N60S5 SPBX2N60S5 Target data sheet Cool MOS Power Transistor •N-Channel •Enhancement mode •Ultra low gate charge •Avalanche rated •dv/dt rated •150°C operating temperature 1 2 3 G D S Type VDS ID RDS on Marking Package Ordering Code SPPX2N60S5


    Original     		SPPX2N60S5 SPBX2N60S5 X2N60S5 P-TO220-3-1 P-TO263-3-2 21/Oct/1998 TRANSISTOR SMD CODE 6.8 tbd 380 DIODE smd marking Ag MARKING CODE TBD TRANSISTOR SMD MARKING CODE ag SPBX2N60S5 SPPX2N60S5 PDF

    BS170

    Abstract: 2N7000 2n7000 equivalent transistor BS170 BS170L X2N7000 05ATC to92 rthja
    Text: N-Channel Enhancement-Mode MOS Transistor CORPORATION 2N7000 / BS170L DESCRIPTION ORDERING INFORMATION The 2N7000 utilizes Calogic’s vertical DMOS technology. The device is well suited for switching applications where BV of 60V and low on resistance under 5 ohms are required. The


    Original     		2N7000 BS170L 2N7000 X2N7000 -55oC 150oC BS170 2n7000 equivalent transistor BS170 BS170L X2N7000 05ATC to92 rthja PDF

    Untitled

    Abstract: No abstract text available
    Text: _ CU lvQ IC N-Channel Enhancement-Mode mos Transistor CORPORATION \J 2N7002 DESCRIPTION ORDERING INFORMATION Calogic’s 2N7002 device type is a vertical DMOS FET transistor housed in a surface mount SOT-23 for micro-assembly applications. The device is an excellent


    OCR Scan     		2N7002 2N7002 OT-23 X2N7002 OT-23 PDF

    2N7002 MARKING

    Abstract: N7002 N-700-2 2N7002 X2N7002 2N7002 v02 RG252
    Text: N-Channet Enhancement-Mode MOS Transistor CORPORATION \J 2N7002 DESCRIPTION ORDERING INFORMATION Calogic's 2N7002 device type is a vertical DMOS FET transistor housed in a surface mount SOT-23 for micro-assembly applications. The device is an excellent choice for switching applications where breakdown Bv and


    OCR Scan     		/170S 2N7002 N7002 OT-23 2N7002 X2N7002 443S2 000GT12 2N7002 MARKING N-700-2 2N7002 v02 RG252 PDF

    2N7002 v02

    Abstract: No abstract text available
    Text: N-Channel Enhancement-Mode MOS Transistor r n ln W ir C C IIO Q IC CORPORATION 2N7002 DESCRIPTION ORDERING INFORMATION Calogic’s 2N7002 device type is a vertical DMOS FET transistor housed in a surface mount SOT-23 tor micro-assembly applications. The device is an excellent


    OCR Scan     		2N7002 2N7002 OT-23 X2N7002 2N7002 v02 PDF

    Untitled

    Abstract: No abstract text available
    Text: N-ChannelEnhancement-Mode MOS Transistor _ CQIOOIC CORPORATION 2N7000/BS170L DESCRIPTION ORDERING INFORMATION The 2N7000 utilizes Calogic’s vertical DMOS technology. The device is well suited for switching applications where Bv of 60V and low on resistance under 5 ohms are required. The


    OCR Scan     		2N7000/BS170L 2N7000 BS170L X2N7000 2N7000 BS170 PDF

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Enhancement-Mode MOS Transistor caioqic CORPORATION 2N7000/BS170L DESCRIPTION ORDERING INFORMATION The 2N7000 utilizes Calogic’s vertical DMOS technology. The device is well suited for switching applications where Bv of 60V and low on resistance under 5 ohms are required. The


    OCR Scan     		2N7000/BS170L 2N7000 2N7000 BS170L X2N7000 O-226AA) BS170 300fiS PDF

    2n7000

    Abstract: BS170L X2N7000 TRANSISTOR2N7000
    Text: N-Channel Enhancement-Mode MOS Transistor calocflc CORPORATION 2N7000/BS170L DESCRIPTION ORDERING INFORMATION The 2N7000 utilizes Calogic’s vertical DMOS technology. The device is well suited for switching applications where Bv of 60V and low on resistance under 5 ohms are required. The


    OCR Scan     		2N7000/BS170L 2N7000 BS170L X2N7000 O-226AA) 1A44322 TRANSISTOR2N7000 PDF

    VPT09051

    Abstract: transistor ag qs VPT09050
    Text: SIEMENS SPUX2N60S5 SPDX2N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09051 VPT09050 • Avalanche rated • dv/df rated • 150°C operating temperature Type SPUX2N60S5 Vds 600 V to 4.5 A


    OCR Scan     		SPUX2N60S5 SPDX2N60S5 VPT09051 VPT09050 X2N60S5 P-T0251-3-1 P-T0252 VPT09051 transistor ag qs VPT09050 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SPPX2N60S5 SPBX2N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • Extreme dv/dt rated • 150°C operating temperature Type ^DS b SPPX2N60S5 600 V 11.3 A 380 m il


    OCR Scan     		SPPX2N60S5 SPBX2N60S5 X2N60S5 P-T0220-3-1 P-T0263-3-2 PDF

    transistor ag qs

    Abstract: transistor smd hq transistor di 960 TRANSISTOR SMD CODE 6.8
    Text: SIEMENS SPPX2N60S5 SPBX2N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • Extreme di//df rated • 150°C operating temperature Type V^DS b SPPX2N60S5 600 V 11.3 A 380 mQ


    OCR Scan     		SPPX2N60S5 SPBX2N60S5 X2N60S5 P-T0220-3-1 P-T0263-3-2 transistor ag qs transistor smd hq transistor di 960 TRANSISTOR SMD CODE 6.8 PDF

    TRANSISTOR SMD MARKING CODE ag

    Abstract: smd TRANSISTOR code AJ transistor marking smd 7c smd marking wds transistor smd marking AJ 7C SMD TRANSISTOR smd transistor marking AJ TRANSISTOR SMD MARKING CODE AJ
    Text: SIEMENS SPNX2N60S5 Target data sheet Cool MOS Power Transistor • Worldwide best Ffos on in SOT 223 • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • d v/d t rated 1 2 ,4 3 • 150°C operating temperature G D S Type


    OCR Scan     		SPNX2N60S5 SPNX2N60S5 X2N60S5 P-SOT223-4-1 TRANSISTOR SMD MARKING CODE ag smd TRANSISTOR code AJ transistor marking smd 7c smd marking wds transistor smd marking AJ 7C SMD TRANSISTOR smd transistor marking AJ TRANSISTOR SMD MARKING CODE AJ PDF

    2N7805

    Abstract: gw 340 diode t03 package transistor pin configuration 32N03 DTG2400 DTG-2400 2N2144A 2N1100 2N126 2n228 transistor
    Text: CY7C1339 128K x 32 Synchronous-Pipelined Cache RAM Features The CY7C1339 I/O pins can operate at either the 2.5V or the 3.3V level; the I/O pins are 3.3V tolerant when V DDq=2.5V. * Supports 100-MHz bus fo r Pentium and PowerPC operations w ith zero w ait states


    OCR Scan     		CY7C1339 100-MHz 166-MHz 133-MHz CY7C1339 Y220a/ T0220AA T0220AB TMW515TDB 2N7805 gw 340 diode t03 package transistor pin configuration 32N03 DTG2400 DTG-2400 2N2144A 2N1100 2N126 2n228 transistor PDF

    2N3921

    Abstract: 2N3922 X2N3922 Dual N-Channel JFET
    Text: CALOGIC CORP Mß E D 10 4 4 3 2 2 00005^4 □ CGC V T-Tni-y 2N3921/2N3922 ’ FEATURES ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted • Low Drain Current • High Output Impedance • Matched V g s, A V g s and gts Gate-Source or Gate-Drain Voltage (Note 1) .-50V


    OCR Scan     		2N3921/2N3922 10sec) 300mW 2N3921 2N3922 2N3921 2N3922 X2N3922 Dual N-Channel JFET PDF

    Dual N-Channel JFET

    Abstract: 2N3922 2N3921 X2N3922
    Text: CA L O G I C CORP MfiE D • 1Ô414322 0 0 0 0 2 T 4 □ « C G C T-zî-^ 7 2N3921 / 2N3922 Monolithic Dual N-Channel JFET General Purpose Amplifier 2N3921/2N3922 FEATU R ES A B S O L U T E MAXIMUM RATING S Ta = 25°C unless otherwise noted • Low Drain Current


    OCR Scan     		00005T4 2N3921/2N3922 10sec) 300mW 443E2 DQG05SS 2N3921/2N3922 2N3921 2N3922 700nA Dual N-Channel JFET 2N3922 2N3921 X2N3922 PDF

    MDA106A

    Abstract: transistor X2N MC34013A GENERAL INSTRUMENT DTMF em 80 microphone
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC34013A TELEPHONE SPEECH NETWORK AND TONE DIALER SPEECH NETWORK AND TONE DIALER Linear/I2L Technology Provides Low 1.4 Volt Operation in Both Speech and Dialing Modes BIPOLAR LINEAR/I2L Speech Network Provides 2-4 Wire Conversion with Adjustable


    OCR Scan     		MC34013A MDA106A, 4-1N4005 2N4126 1N5931A CSB500 EM-95 07A181P DH-34 MDA106A transistor X2N MC34013A GENERAL INSTRUMENT DTMF em 80 microphone PDF

    2N5454

    Abstract: 2N5454 equivalent 2N5452 2N5452 equivalent FET package TO-71 2N5453
    Text: CALOGIC CORP MAE » lflMM3EE OOÜQ328 5 M C G C Dual N-Channel JFET General Purpose Amplifier T'-zn-T.y CORPORATION 2N5452 - 2N5454 /•/iIaWî/ 1 CQlOOIC ■ 2N5452-2N5454 GENERAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS Ta ■ 25°C unless otherwise noted


    OCR Scan     		2N5452-2N5454 2N5452 2N5454 100MHz 200nA 10Mfl 200pA 100Hz 2N5454 2N5454 equivalent 2N5452 equivalent FET package TO-71 2N5453 PDF

    2N6485

    Abstract: 2N6483 X2N6485 2n6485 equivalent 2N64 U401
    Text: _CQIOylC _| _ Dual N-Channel JFET Low Noise Amplifier CORPORATION 2N6483 - 2N6485 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • • • • Ultra Low Noise High CMRR Low Offset Tight Tracking Gate-Source or Gate-Drain Voltage (Note 1) .-50V


    OCR Scan     		2N6483 -2N6485 10sec) 250mW 400mW 2N6485 X2N6485 2n6485 equivalent 2N64 U401 PDF

    2n5196

    Abstract: 097V "DUAL N-Channel JFET" 2N5198-2N5199
    Text: CALOGIC CORP 4ÔE D • lflM4322 □□00322 1 ■ C G C caloric CORPORATION V 'T - Z n - f l 2N5196-2N5193 ABSOLUTE MAXIMUM RATINGS T a - 2 5 °C unless otherwise noted G ate-S ource or Gate-Drain Voltage (Note 1) .-50V G ate Current (N ote 1) .50m A


    OCR Scan     		lflM4322 2N5196-2N5199 2N5196-2N5193 200nA 300ns, 2n5196 097V "DUAL N-Channel JFET" 2N5198-2N5199 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3810A / 2N3811A ABSOLUTE MAXIMUM RATINGS Ta - 25°C unless otherwise noted Emitter-Base Voltage (Note 1 ) . -5V Collector-Base or Collector-Emitter Voltage (Note 1) .


    OCR Scan     		2N3810A 2N3811A 500mW 600mW /2N3811A 100Hz. 300ps, PDF

    2n5118

    Abstract: No abstract text available
    Text: CALOGIC 46E CORP ICGC 1644322 D00D320 fi I> caloric CORPORATION V 2N5117-2N5119 FEATURES • • • • • A B S O L U T E MAXIMUM RATINGS Ta - 25°C unless otherwise noted High Gain at Low Current Low Output Capacitance G oo d hFE Match Tight V b e Tracking


    OCR Scan     		D00D320 2N5117-2N5119 10jiA 2n5118 PDF

    2n6485

    Abstract: 2n6485 equivalent
    Text: Dual N-Channel JFET Low Noise Amplifier caioqic CORPORATION 2N6483-2N6485 ABSO LU TE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • • • • Ultra Low Noise High CMRR Low Offset Tight Tracking G ate-Source or Gate-Drain Voltage (Note 1) . -50V


    OCR Scan     		2N6483-2N6485 400mW0V, 200nA 200hA, 20LogioAVDo/ 2n6485 2n6485 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: CCllotfiC Monolithic Dual Matched PNP General Purpose Amplifier CORPORATION 2N3810A /2N3811A ABSOLUTE MAXIMUM RATINGS Ta - 25°C unless otherwise noted Emitter-Base Voltage (Note 1 ) . -5V Collector-Base or Collector-Emitter Voltage


    OCR Scan     		2N3810A /2N3811A 100Hz, -100pA, 200kHz 10kHz, 300ps, 10kHz. PDF