TRANSISTOR Y2 Search Results

TRANSISTOR Y2 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR Y2 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j	PDF
JLN 2003 Abstract: 2SC4226 APPLICATION NOTES newmarket transistor 2SC4226 2SC4226-T1 2SC4226-T1-A 2SC4226-A Korea Electronics TRANSISTOR Text: PreliminaryData Sheet 2SC4226 R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.	Original	2SC4226 R09DS0022EJ0200 2SC4226 S21e2 2SC4226-A 2SC4226-T1 JLN 2003 2SC4226 APPLICATION NOTES newmarket transistor 2SC4226-T1 2SC4226-T1-A 2SC4226-A Korea Electronics TRANSISTOR	PDF
ZXTC6718MCTA Abstract: DFN3020B-8 ZXTC6718MC marking db2 peak hold ic Text: A Product Line of Diodes Incorporated ZXTC6718MC COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTOR Features Mechanical Data • • • • • • • • • • • NPN Transistor VCEO =20 RSAT = 47 mΩ IC = 4.5A PNP Transistor VCEO = -20V	Original	ZXTC6718MC 150mV DFN3020B-8 J-STD-020 MIL-STD-202, DS31927 ZXTC6718MCTA DFN3020B-8 ZXTC6718MC marking db2 peak hold ic	PDF
ZXTC6717MC Abstract: marking DA1 DFN3020B-8 ZXTC6717MCTA Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data • • • • • • • • • • • • • • NPN Transistor • VCEO = 15V • RSAT = 45mΩ • IC = 4.5A PNP Transistor	Original	ZXTC6717MC 100mV DFN3020B-8 J-STD-020 MIL-STD-202, DS31926 ZXTC6717MC marking DA1 DFN3020B-8 ZXTC6717MCTA	PDF
MARKING 91A NPN transistor Abstract: MARKING 91A DFN3020B-8 ZXTC4591AMC ZXTC4591AMCTA Text: A Product Line of Diodes Incorporated ZXTC4591AMC COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR Features Mechanical Data • • • • • • • • • • • • NPN Transistor VCEO = 40 RSAT = 195 mΩ IC = 2.5A PNP Transistor VCEO = -40V	Original	ZXTC4591AMC 500mV DFN3020B-8 J-STD-020 MIL-STD-202, DS31925 MARKING 91A NPN transistor MARKING 91A DFN3020B-8 ZXTC4591AMC ZXTC4591AMCTA	PDF
DFN3020B-8 Abstract: ZXTC6719MC ZXTC6720MC ZXTC6720MCTA Text: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data • • • • • • • • • • • • • • NPN Transistor • VCEO = 80V • RSAT = 68 mΩ • IC = 3.5A PNP Transistor	Original	ZXTC6720MC -185mV DFN3020B-8 J-STD-020 MIL-STD-202, ZXTC6719MC DS31929 DFN3020B-8 ZXTC6719MC ZXTC6720MC ZXTC6720MCTA	PDF
DFN3020B-8 Abstract: ZXTC6719MC ZXTC6719MCTA Text: A Product Line of Diodes Incorporated ZXTC6719MC DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data • • • • • • • • • • • • • • NPN Transistor • VCEO = 50V • RSAT = 68 mΩ • IC = 4A PNP Transistor	Original	ZXTC6719MC 100mV DFN3020B-8 J-STD-020 MIL-STD-202, DS31928 DFN3020B-8 ZXTC6719MC ZXTC6719MCTA	PDF
transistor Y2 Abstract: Y2 TRANSISTOR Supersot6 transistor marking y2 marking 002 complementary npn-pnp FMB3946 Supersot 6 Text: FMB3946 C2 E1 C1 Package: SuperSOT-6 Device Marking: .002 Note: The " . " dot signifies Pin 1 B2 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a general purpose amplifier and switch. The useful	Original	FMB3946 100mA 100MHz 100MHz 100uA, fmb3946 lwpPr23 transistor Y2 Y2 TRANSISTOR Supersot6 transistor marking y2 marking 002 complementary npn-pnp Supersot 6	PDF
Y22 SOT23 Abstract: MSB003 g21 Transistor PMBTH10 B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11 Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBTH10 NPN 1 GHz general purpose switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor	Original	PMBTH10 PMBTH10 PMBTH81. MSB003 Y22 SOT23 MSB003 g21 Transistor B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11	PDF
PMBTH10 Abstract: MSB003 PMBTH81 MRA566 Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBTH81 PNP 1 GHz switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification PNP 1 GHz switching transistor FEATURES PINNING • Low cost	Original	PMBTH81 PMBTH81 PMBTH10. MSB003 PMBTH10 MSB003 MRA566	PDF
Untitled Abstract: No abstract text available Text: RN2130MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2130MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.22±0.05 Unit : mm Simplify circuit design	Original	RN2130MFV RN1130MFV	PDF
Untitled Abstract: No abstract text available Text: RN2130MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2130MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Reduce a quantity of parts and manufacturing process	Original	RN2130MFV RN1130MFV	PDF
RN1130MFV Abstract: RN2130MFV sat 1205 Text: RN2130MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2130MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Reduce a quantity of parts and manufacturing process	Original	RN2130MFV RN1130MFV RN1130MFV RN2130MFV sat 1205	PDF

BC237 Abstract: equivalent to BC177 2n6431 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN5111DW1T1 SERIES Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a monolithic	Original	MUN5111DW1T1 Reduc218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 equivalent to BC177 2n6431	PDF
BC237 Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device	Original	SC-70/SOT-323 Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 level shifter 2N5401 2771 040 0002 MUN5214T1	PDF
transistor BF245 Abstract: BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA14T1 NPN SmallĆSignal Darlington Transistor Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The	Original	OT-223 PZTA14T1 inch/1000 U218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor BF245 BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363	PDF
MBB400 Abstract: MSB003 BF747 transistor y21 y21 transistor marking code 604 SOT23 Text: DISCRETE SEMICONDUCTORS DATA SHEET BF747 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation	Original	BF747 MSB003 MBB400 MSB003 BF747 transistor y21 y21 transistor marking code 604 SOT23	PDF
BF180 Abstract: s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504 Text: * B F 180 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN S ILIC IU M , PLAN A R % Preferred device D is p o s itif recom m andé The NPN planar transistor BF 180 is intended for use in UHF amplifier stages of T V receivers AGC controlled stages . Le transistor planar NPN BF 180 est destiné à être u ti	OCR Scan	BF180 BF180 s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR t m FMB3946 Package: SuperSOT-6 Device Marking: .002 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a general purpose amplifier and switch. The useful	OCR Scan	FMB3946 100mA 100MHz 100MHz 10OuA, fmb3946 lwpPr23	PDF
BFX60 Abstract: p21e Q60206-X 510Z5 bfx 63 transistor for RF amplifier Text: BFX60 NPN Transistor for RF amplifier stages BFX 60 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 T O -7 2 , with different lead arrangement however. The leads are electrically insulated from the case. The transistor is particularly suitable for common-emitter RF amplifier	OCR Scan	BFX60 BFX60 Q60206-X p21e 510Z5 bfx 63 transistor for RF amplifier	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology	OCR Scan	BUK9620-55	PDF
2iy transistor Abstract: No abstract text available Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology	OCR Scan	BUK9628-55 SQT404 2iy transistor	PDF

TRANSISTOR Y2 Search Results

TRANSISTOR Y2 Result Highlights (5)

TRANSISTOR Y2 Datasheets Context Search

MN1280

oz960

JLN 2003

ZXTC6718MCTA

ZXTC6717MC

MARKING 91A NPN transistor

DFN3020B-8

DFN3020B-8

transistor Y2

Y22 SOT23

PMBTH10

Untitled

Untitled

RN1130MFV

BC237

BC237

transistor BF245

MBB400

BF180

2sb504

Untitled

BFX60

Untitled

2iy transistor