TRANSISTOR Z4 Search Results

TRANSISTOR Z4 Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR Z4 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055	PDF
transistor N100 Abstract: N100 transistor K 192 A transistor Transistor 5331 BUZ42 N100 T0220AB V103 transistor k 3911 Text: N AMER P H I L I PS /D I SC RE T E ObE D • tb53131 Power M OS transistor OOIMSOO BU Z42 5 r - 3 7 -\i May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ42 0014SDb T-39-11 transistor N100 N100 transistor K 192 A transistor Transistor 5331 BUZ42 N100 T0220AB V103 transistor k 3911	PDF
Motorola 680 Abstract: Case 449-02 Motorola transistor 358 TRANSISTOR Z4 marking Z4 marking Z6 MRF9822T1 transistor 9822 nippon ferrite vk200 ferrite bead Text: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Gallium Arsenide PHEMT MRF9822T1 Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT	Original	MRF9822T1/D MRF9822T1 MRF9822/D Motorola 680 Case 449-02 Motorola transistor 358 TRANSISTOR Z4 marking Z4 marking Z6 MRF9822T1 transistor 9822 nippon ferrite vk200 ferrite bead	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 PINNING - SOT538A FEATURES • High power gain	Original	M3D438 BLA1011-2 OT538A SCA75 R77/05/pp9	PDF
Motorola transistor 358 Abstract: Case 449-02 Text: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Gallium Arsenide PHEMT MRF9822T1 Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT	Original	MRF9822T1/D MRF9822T1 MRF9822T1 MRF9822T1/D Motorola transistor 358 Case 449-02	PDF
MCE021 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLF2043 UHF power LDMOS transistor Product specification Supersedes data of 2002 Jul 02 2002 Sep 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2043 PINNING - SOT538A FEATURES • Easy power control	Original	M3D438 BLF2043 SCA74 613524/05/pp12 MCE021	PDF
transistor SMD Z2 Abstract: 200B BLA1011-2 MGU487 SOT538A The 2003 is a COMMON BASE transistor smd transistor z1 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 FEATURES PINNING - SOT538A • High power gain	Original	M3D438 BLA1011-2 OT538A SCA75 R77/05/pp9 transistor SMD Z2 200B BLA1011-2 MGU487 SOT538A The 2003 is a COMMON BASE transistor smd transistor z1	PDF
MGU487 Abstract: 200B BLA1011-2 NV SMD TRANSISTOR Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2002 Jun 17 2002 Oct 02 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 FEATURES PINNING - SOT538A • High power gain	Original	M3D438 BLA1011-2 OT538A SCA74 613524/04/pp8 MGU487 200B BLA1011-2 NV SMD TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information MRF9822T1 The RF Small Signal Line G allium A rsenide PHEMT Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT	OCR Scan	MRF9822T1/D MRF9822T1 MRF9822/D	PDF
transistor smd z9 Abstract: transistor smd z8 Z9 TRANSISTOR SMD 600F8R2CT250 J374 SMD Transistor z6 AGR18045E JESD22-C101A CRCW12064R75F100 vishay 1206 Text: AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18045E AGR18045E transistor smd z9 transistor smd z8 Z9 TRANSISTOR SMD 600F8R2CT250 J374 SMD Transistor z6 JESD22-C101A CRCW12064R75F100 vishay 1206	PDF
transistor equivalent table 557 Abstract: 21045F Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18030EF DS04-204RFPP PB04-101RFPP) transistor equivalent table 557 21045F	PDF

"RF Power Transistor" Abstract: AGR18030EF JESD22-C101A transistor equivalent table 557 Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18030EF AGR18030EF 21045F "RF Power Transistor" JESD22-C101A transistor equivalent table 557	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE E5E D ^ 5 3 1 3 1 Q030b7D S PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable	OCR Scan	Q030b7D BUK637-400A BUK637-400B BUK637 -400A D0S0h74	PDF
Untitled Abstract: No abstract text available Text: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19125E Hz--1990 AGR19125EU AGR19125EF	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 2, 4/2010 RF Power Field Effect Transistor MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for	Original	MRF6V10250HS MRF6V10250HSR3	PDF
J293 Abstract: 100A470JW RM73B2B100J Transistor Z17 100B100JW AGR18125E AGR18125EF AGR18125EU JESD22-C101A Text: Product Brief AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor	Original	AGR18125E AGR18125E AGR18125EF AGR18125XF M-AGR21125F 12-digit J293 100A470JW RM73B2B100J Transistor Z17 100B100JW AGR18125EF AGR18125EU JESD22-C101A	PDF
100B100JW500X Abstract: AGR19125E AGR19125EF AGR19125EU JESD22-C101A 1961-25 Text: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19125E Hz--1990 AGR19125E AGR19125EU AGR19125EF IS-95 IS-95) 100B100JW500X AGR19125EF AGR19125EU JESD22-C101A 1961-25	PDF
J307 FET Abstract: AGR19180EF JESD22-A114 agere c8 Text: Preliminary Data Sheet March 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	AGR19180EF Hz--1990 AGR19180EF DS04-080RFPP DS02-377RFPP) J307 FET JESD22-A114 agere c8	PDF
Z25 transistor Abstract: Z27 transistor Text: Document Number: MHT1001H Rev. 0, 5/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MHT1001HR5 RF power transistor suitable for industrial heating applications operating at 2450 MHz. Device is capable of both CW and pulse operation.	Original	MHT1001H MHT1001HR5 Z25 transistor Z27 transistor	PDF
D1649 Abstract: SC-75 KA4A4M Text: DATA SHEET SILICON TRANSISTOR KA4xxx RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES ★ PACKAGE DRAWING Unit: mm • Compact package 0.3 ± 0.05 • Resistors built-in type 0.1 +0.1 –0.05 ORDERING INFORMATION PART NUMBER PACKAGE KA4xxx 0.8 ± 0.1 1.6 ± 0.1	Original	SC-75 D1649 SC-75 KA4A4M	PDF
2sc4624 Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEATURES • High power gain : Goe S 4.7dB, Po S 45W	OCR Scan	2SC4624 2SC4624 900MHz. 800-900MHz 900MHz	PDF

TRANSISTOR Z4 Search Results

TRANSISTOR Z4 Result Highlights (5)

TRANSISTOR Z4 Datasheets Context Search

MN1280

oz960

la 4440 amplifier circuit diagram 300 watt

rjh3047

transistor N100

Motorola 680

Untitled

Motorola transistor 358

MCE021

transistor SMD Z2

MGU487

Untitled

transistor smd z9

transistor equivalent table 557

"RF Power Transistor"

Untitled

Untitled

Untitled

J293

100B100JW500X

J307 FET

Z25 transistor

D1649

2sc4624