TRANSISTOR Z4 N Search Results

TRANSISTOR Z4 N Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR Z4 N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: MC10192 Quad Bus Driver The MC10192 contains four line drivers with complementary outputs. Each driver has a Data D input and shares an Enable (E) input with another driver. The two driver outputs are the uncommitted collectors of a pair of NPN transistors operating as a current switch.	Original	MC10192	PDF
transistor z3 Abstract: TRANSISTOR Z4 Text: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz • 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-max	Original	RT230PD 900MHz 47dBm SP-12 RT230PD 50MHz SP-12 transistor z3 TRANSISTOR Z4	PDF
transistor C4 Abstract: No abstract text available Text: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz • 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-Max	Original	RT230PD 900MHz 47dBm SP-12 RT230PD 50MHz SP-12 transistor C4	PDF
transistor z5 Abstract: erie redcap IC 2025 NPN TRANSISTOR Z4 RF push pull power amplifier TRANSISTOR Z4 MRF392 redcap 7w120 transistor D 716 Text: Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —	Original	MRF392/D MRF392 MRF392 i1-44-844-8298 transistor z5 erie redcap IC 2025 NPN TRANSISTOR Z4 RF push pull power amplifier TRANSISTOR Z4 redcap 7w120 transistor D 716	PDF
CRITCHLEY 9003 Abstract: siemens CNY17-2 TE 2161 CRITCHLEY 9004 BS6317 "Critchley 9003 Critchley step down transformer winding ratio critchley label Critchley transformers Text: ICs for Communications Analog Line Interface with the ARCOFI -BA PSB 2161 Application Note 06.96 PSB 2161 Revision History: Current Version: 06.96 Previous Version: Page Page in previous (in current Version Version) Subjects (major changes since last revision)	Original	BS6305; BS6317 B11-11 CRITCHLEY 9003 siemens CNY17-2 TE 2161 CRITCHLEY 9004 "Critchley 9003 Critchley step down transformer winding ratio critchley label Critchley transformers	PDF
MRF282 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF282-1 Rev. 16, 10/2008 RF Power Field Effect Transistor MRF282SR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282--1 MRF282SR1 MRF282--1 MRF282	PDF
100B201JT500XT Abstract: CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282 Text: Freescale Semiconductor Technical Data Document Number: MRF282-2 Rev. 17, 10/2008 RF Power Field Effect Transistor MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282--2 MRF282ZR1 458C-03, NI-200Z MRF282--2 100B201JT500XT CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282	PDF
MRF392 Abstract: TRANSISTOR Z4 3142 equivalent J044 Z1 Transistor 6 pin transistor Z6 Z6 82 mini cap 744A-01 LX125 Text: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —	Original	MRF392/D MRF392 MRF392/D* MRF392 TRANSISTOR Z4 3142 equivalent J044 Z1 Transistor 6 pin transistor Z6 Z6 82 mini cap 744A-01 LX125	PDF
ATC100A101JP150 Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35010AN MRFG35010ANT1 DataMRFG35010AN ATC100A101JP150 GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —	Original	MRF392/D MRF392 MRF392/D*	PDF
RO4350B Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 4, 8/2013 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35010AN MRFG35010ANT1 500ating 8/2013Semiconductor, RO4350B	PDF
ATC100B471JT200XT Abstract: EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1 Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	MRFE6VS25N MRFE6VS25NR1 MRFE6VS25N ATC100B471JT200XT EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	MRFE6VS25N MRFE6VS25NR1 25cale	PDF
N/A9M07 Abstract: No abstract text available Text: Document Number: AFT09MS007N Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N−Channel Enhancement−Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two−way radio applications with frequencies from	Original	AFT09MS007N AFT09MS007NT1 N/A9M07	PDF

UAA145 Abstract: transistor t20 telefun UAA145 TELEFUNKEN UAA145 PINS Text: UAA145 TELEFUNKEN Semiconductors Phase Control Circuit for Industrial Applications Description The UAA145 is a bipolar integrated circuit, designed to provide phase control for industrial applications. It permits the number of components in thyristor drive	Original	UAA145 UAA145 D-74025 transistor t20 telefun UAA145 TELEFUNKEN UAA145 PINS	PDF
MRF18060A Abstract: No abstract text available Text: Document Number: MRF18060A Rev. 11, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18060ALR3 LIFETIME BUY Designed for PCN and PCS base station applications with frequencies from	Original	MRF18060A MRF18060ALR3 MRF18060A	PDF
Z1 Transistor Abstract: smd transistor marking j2 smd transistor marking z3 465A MARKINGS MRF18060A Text: Freescale Semiconductor Technical Data Document Number: MRF18060A Rev. 10, 10/2008 RF Power Field Effect Transistor MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18060A MRF18060ALSR3 MRF18060A Z1 Transistor smd transistor marking j2 smd transistor marking z3 465A MARKINGS	PDF
smd transistor marking j2 Abstract: sot 23 transistor marking w 26 MRF18060A Text: Freescale Semiconductor Technical Data Document Number: MRF18060A-2 Rev. 11, 10/2008 RF Power Field Effect Transistor MRF18060ALR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18060A--2 MRF18060ALR3 MRF18060A--2 smd transistor marking j2 sot 23 transistor marking w 26 MRF18060A	PDF
MRF18060A Abstract: smd transistor marking z3 archive smd transistor marking j2 smd transistor marking z1 Text: Freescale Semiconductor Technical Data Document Number: MRF18060A-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18060A--1 MRF18060ALSR3 MRF18060A--1 MRF18060A smd transistor marking z3 archive smd transistor marking j2 smd transistor marking z1	PDF
TRANSISTOR Z4 Abstract: "100 6W" RF push pull power amplifier MRF393 Transistor z1 744A-01 Text: Order this document by MRF393/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF393 . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 500 MHz Characteristics —	Original	MRF393/D MRF393 TRANSISTOR Z4 "100 6W" RF push pull power amplifier MRF393 Transistor z1 744A-01	PDF
MRF644 Abstract: MOTOROLA 381 equivalent NPN TRANSISTOR Z4 TRANSISTOR J214 Text: MOTOROLA Order this document by MRF644/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 06/07/00 The RF Line MRF644 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.	Original	MRF644/D MRF644 MRF644 MRF644/D* MRF644/D MOTOROLA 381 equivalent NPN TRANSISTOR Z4 TRANSISTOR J214	PDF
transistor z9 Abstract: transistor Z2 RT240PD cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 RT240 gsm wcdma repeater 1608 B 100NF Text: Preliminary 10W Power Transistor RT240PD Product Features Application • High Output Power P1dB = 40dBm Typ. @2.14GHz • High Efficiency • High Power Gain G1dB = 17dB(Typ.)@900MHz G1dB = 13dB(Typ.)@2.14GHz • High Linearity • Hermetically sealed package	Original	RT240PD 40dBm 14GHz 900MHz IMT-2000 RT240PD IMT-2000, 14iminary transistor z9 transistor Z2 cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 RT240 gsm wcdma repeater 1608 B 100NF	PDF
MRF644 Abstract: TRANSISTOR Z4 VK200 MOTOROLA 381 equivalent Text: MOTOROLA Order this document by MRF644/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF644 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.	Original	MRF644/D MRF644 MRF644/D* MRF644 TRANSISTOR Z4 VK200 MOTOROLA 381 equivalent	PDF
27271SL Abstract: MALLORY CAPACITORS MALLORY VARIABLE CAPACITORS RE65G1R00 MALLORY 150 CAPACITORS C18 ph GX-0300-55-22 GX-0300 ph c15 mjd310 Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications	Original	MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 27271SL MALLORY CAPACITORS MALLORY VARIABLE CAPACITORS RE65G1R00 MALLORY 150 CAPACITORS C18 ph GX-0300-55-22 GX-0300 ph c15 mjd310	PDF

TRANSISTOR Z4 N Search Results

TRANSISTOR Z4 N Result Highlights (5)

TRANSISTOR Z4 N Datasheets Context Search

Untitled

transistor z3

transistor C4

transistor z5

CRITCHLEY 9003

MRF282

100B201JT500XT

MRF392

ATC100A101JP150

Untitled

RO4350B

ATC100B471JT200XT

Untitled

N/A9M07

UAA145

MRF18060A

Z1 Transistor

smd transistor marking j2

MRF18060A

TRANSISTOR Z4

MRF644

transistor z9

MRF644

27271SL