MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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Transistor 03 smd
Abstract: smd transistor NF transistor smd zc 11 smd transistor zc SMD TRANSISTOR TRANSISTOR SMD fr transistor SMD 24 smd transistor marking 03
Text: SMD General Purpose Transistor NPN MMBT3904 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals:
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MMBT3904
OT-23
OT-23,
MIL-STD-202G,
Transistor 03 smd
smd transistor NF
transistor smd zc 11
smd transistor zc
SMD TRANSISTOR
TRANSISTOR SMD fr
transistor SMD 24
smd transistor marking 03
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NTE341
Abstract: No abstract text available
Text: NTE341 Silicon NPN Transistor RF Power Output Description: The NTE341 is a epitaxial silicon NPN transistor designed primarily for VHF mobile communications. The chip of this transistor is mounted so as to isolate the collector lead and ground the emitter lead
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NTE341
NTE341
175MHz
155MHz
136MHz
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Untitled
Abstract: No abstract text available
Text: KST4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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KST4124
OT-23
KST3904
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B578
Abstract: kst4124
Text: KST4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS TA=25t; Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Currant Collector Dissipation Storage T emperature
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KST4124
KST3904
100MHz
B578
kst4124
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BFY80
Abstract: No abstract text available
Text: Silïzium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Pianar Transistor Anwendungen: Ansteuerung von Ziffernanzeigeröhren und Relais Applications: D river stages fo r in d ica to r tubes and relays Features: Besondere Merkmale: • Hohe Sperrspannung
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J162
Abstract: transistor j162 SATCOM ASAT35L
Text: ASAT35L NPN RF POWER TRANSISTOR DESCRIPTION: The ASAT35L is a Common Base Transistor Designed for L-Band Satcom Amplifier Applications. PACKAGE STYLE 400 2L FLG FEATURES INCLUDE: • Input/Output Matching Networks • Gold Metallization • Emitter Ballasting
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ASAT35L
ASAT35L
J162
transistor j162
SATCOM
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NTE478
Abstract: No abstract text available
Text: NTE478 Silicon NPN Transistor RF Power Output, PO = 100W @ 175MHz Description: The NTE478 is a 12.5 Volt epitaxial silicon NPN planar transistor designed primarily for VHF communications. This device utilizes diffused emitter resistors to achieve infinite VSWR under operating
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NTE478
175MHz
NTE478
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marking code W1
Abstract: TRANSISTOR 3358 BFT92 BFT92W
Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT92W uses the same crystal as the SOT23 version, BFT92. • Gold metallization ensures
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BFT92W
OT323
BFT92W
BFT92.
MBCB70
OT323.
7110fl2b
marking code W1
TRANSISTOR 3358
BFT92
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VHB125-28
Abstract: ASI10731 j105 transistor
Text: VHB125-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB125-28 is NPN RF power transistor designed primarily for VHF communications. It utilizes Emitter ballasting to provide high VSWR handling capability. PACKAGE STYLE .500 6L FLG FEATURES: C A
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VHB125-28
VHB125-28
ASI10731
j105 transistor
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HF220-28
Abstract: ASI10609
Text: HF220-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF220-28 is 28 V epitaxial planar transistor, designed for SSB and VHF communications. The device utilizes emitter ballasting for improved ruggedness and reliability. PACKAGE STYLE .500 4L FLG .112x45°
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HF220-28
HF220-28
112x45°
000MHz
ASI10609
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Untitled
Abstract: No abstract text available
Text: GaAs IRED a PHOTO-TRANSISTOR TLP731,732 OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. The TOSHIBA TLP731 and TLP732 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead
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TLP731
TLP732
BS415
BS7002
EN60950)
UL1577,
E67349
TLP731
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ULBM5
Abstract: ASI10680
Text: ULBM5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM5 is a gold metallized RF power transistor designed for 12.5 V, Class-C UHF communications applications. It utilizes emitter ballasting to achieve high reliability & ruggedness. PACKAGE STYLE .280 4L STUD
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BFT92
Abstract: "MARKING CODE W1*" GHz PNP transistor marking G SOT323 Transistor SOT323 Marking 87 SOT323 WM BFT92W marking L2 SOT23 6
Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT92W uses the same crystal as the SOT23 version, BFT92. • Gold metallization ensures
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BFT92W
OT323
BFT92W
BFT92.
OT323.
711002b
BFT92
"MARKING CODE W1*"
GHz PNP transistor
marking G SOT323 Transistor
SOT323 Marking 87
SOT323 WM
marking L2 SOT23 6
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ULBM45
Abstract: ASI10685
Text: ULBM45 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM45 is a gold metallized RF power transistor designed for 12.5 V class-C UHF communication applications. The device utilizes emitter ballasting to achieve high reliability and ruggedness. PACKAGE STYLE .500 6L FLG
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ULBM45
ULBM45
ASI10685
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Untitled
Abstract: No abstract text available
Text: MS1263 RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS Features • • • • • • 512 MHz 12.5 VOLTS POUT = 15 W MINIMUM GP = 7.8 dB INPUT MATCHED COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1263 is a NPN silicon RF power transistor designed for
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MS1263
MS1263
500mA
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transistor smd zc ce
Abstract: PMBT3904VS smd "code rc" transistor MARKING CODE ZC smd transistor zc Marking Code SMD zc NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODE transistor smd zc 11 transistor smd code marking 101
Text: PMBT3904VS 40 V, 200 mA NPN/NPN switching transistor Rev. 01 — 8 July 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device SMD plastic package.
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PMBT3904VS
OT666
PMBT3904VS
PMBT3906VS
PMBT3946VPN
771-PMBT3904VS115
transistor smd zc ce
smd "code rc" transistor
MARKING CODE ZC
smd transistor zc
Marking Code SMD zc
NXP SMD TRANSISTOR MARKING CODE
TRANSISTOR SMD MARKING CODE
transistor smd zc 11
transistor smd code marking 101
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KST3904 sot-23
Abstract: KST3904 KST4124
Text: KST4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature
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KST4124
KST3904
OT-23
100MHz
100HA,
300ns,
KST3904 sot-23
KST4124
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sot 23 marking code 2t
Abstract: marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR
Text: FERRANTI semiconductors HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is
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OT-23
FMMT-A13
FMMT-A14
BCW67A
FMMT-A20
BCW67B
FMMT-A42
BCW67C
FMMT-A43
sot 23 marking code 2t
marking DG sot-23 NPN transistor
sot-23 MARKING CODE G1
MARKING NT SOT23
sot-23 l6
marking of m7 diodes
sot-23 marking LC
transistor ad 1v
m6 marking transistor sot-23
C5 MARKING TRANSISTOR
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BFS62
Abstract: Planar RF Transistor B4025 AC309
Text: BFS 62 'W Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Allgem ein bis in den VHF-Bereich Applications: General up to the VHF range Besondere Merkmale: Features: • Kleine R ückw irkungskapazität • Small feedback capacitance
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BFS62
BFS62
Planar RF Transistor
B4025
AC309
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free transistor equivalent book
Abstract: free all transistor equivalent book transistor ic equivalent book
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS4350T 50 V low VCEsat NPN transistor Product specification 2002 Aug 08 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat and
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M3D088
PBSS4350T
SCA74
613514/01/pp12
free transistor equivalent book
free all transistor equivalent book
transistor ic equivalent book
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VHB50-28S
Abstract: ASI10730
Text: VHB50-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB50-28S is an NPN power transistor designed for 25 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metalization to provide optimum VSWR capability. PACKAGE STYLE .380 4L STUD
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VHB50-28S
VHB50-28S
112x45°
ASI10730
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