TRANSISTOR ZO 109 MA Search Results

TRANSISTOR ZO 109 MA Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR ZO 109 MA Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
AT-32011 Abstract: AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK Text: AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them	Original	AT-32011, AT-32033 AT-32011 AT-32033 OT-23, OT-143. AT-32011: AT-32033: AT-32011-BLK AT-32011-TR1 AT-32033-BLK	PDF
TRANSISTOR zo 109 ma Abstract: transistor zo 109 transistor 86 IC 7585 midium power uhf transistor B15V140 microwave transistor ZO 109 transistor Text: BIPOLARICS, INC. Part Number B15V140 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V140 is a high performance silicon bipolar transistor intended for medium power linear and Class C	Original	B15V140 B15V140 OT-223 OT-103 TRANSISTOR zo 109 ma transistor zo 109 transistor 86 IC 7585 midium power uhf transistor microwave transistor ZO 109 transistor	PDF
BFQ 58 Abstract: No abstract text available Text: SIEM ENS NPN Silicon RF Transistor BFQ 29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. S CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions!	OCR Scan	Q62702-F659 OT-23 fi23SbDS BFQ 58	PDF
transistor SMD MARKING CODE 772 Abstract: SMD MARKING CODE 201 952 transistor zo 607 zo 607 MA smd Transistor 1117 transistor smd code marking 404 DSA0062290 transistor zo 107 in 4436 zo 607 Text: P-HEMT CFH 400 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz F = 0.55 dB; GA = 15.7 dB @ 3 V; 10 mA; f = 1.8 GHz • Suitable for PCS CDMA and UMTS applications • Low cost miniature package P-SOT343-4-1	Original	P-SOT343-4-1 Q62702-G0116 RN/50 GPS05605 transistor SMD MARKING CODE 772 SMD MARKING CODE 201 952 transistor zo 607 zo 607 MA smd Transistor 1117 transistor smd code marking 404 DSA0062290 transistor zo 107 in 4436 zo 607	PDF
AT41500 Abstract: AT-41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586 Text: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be	Original	AT-41500 AT-41500 AT-41500-GP4 AV01-0077EN AT41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586	PDF
AT41586 Abstract: AT-41586 AT-41586-BLK AT-41586-TR1 S21E Text: Low Cost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount Package • Tape and Reel Option	Original	AT-41586 AT-41586 AT41586 5965-8908E AT-41586-BLK AT-41586-TR1 S21E	PDF
AT-41586 Abstract: AT-41586-BLK AT-41586-TR1 S21E Text: Low Cost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount Package • Tape and Reel Option	Original	AT-41586 AT-41586 AT-41586-BLK AT-41586-TR1 S21E	PDF
AT-41586 Abstract: AT-41586-BLK AT-41586-TR1 S21E TRANSISTOR zo 109 ma Text: AT-41586 Low Cost General Purpose Transistors Data Sheet Description Features Avago’s AT-41586 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41586 is housed in a low cost surface mount .085" diameter plastic package. The	Original	AT-41586 AT-41586 5965-8908E 5989-2651EN AT-41586-BLK AT-41586-TR1 S21E TRANSISTOR zo 109 ma	PDF
IP3 MARK Abstract: aabl Text: 19-1181; Rev 1; 7/9? J ¥ ìj ixiyü _ GeneraI Description The MAX2630/MAX2631/MAX2632/MAX2633 are lowvoltage, low-noise am plifiers for use from VHF to microwave frequencies. Operating from a single +2.7V to +5.5V supply, these devices have a fla t gain	OCR Scan	MAX2630/MAX2631/MAX2632/MAX2633 900MHz. MAX2630/MAX2631 MAX2632/MAX2633 MAX263 MAX2631 X2630-M X2633 IP3 MARK aabl	PDF
Untitled Abstract: No abstract text available Text: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!	OCR Scan	BFQ70 Q62702-F774 S23SbOS 0Db7117	PDF
transistor zo 107 Abstract: 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor Text: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features ? Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz	Original	OT343 CFH400 Q62702-G0116 volt-69 Rn/50 transistor zo 107 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor	PDF
transistor zo 107 Abstract: 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor Text: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features • • • • • Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz	Original	OT343 CFH400 Q62702-G0116 OT343 vol51 Rn/50 transistor zo 107 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor	PDF
Untitled Abstract: No abstract text available Text: H E W L E T T - P A C K A R D / CI1PNTS m blE J> • 444 7 5S 4 O O Q ' P f H flS4 ■ H P A AT-01672 Up to 1 GHz General Purpose Silicon Bipolar Transistor HEW LETT PACKARD Features TO-72 Package • 24.0 dBm typical Pi <mat 1.0 GHz • 5.5 dB typical Gi dB at 1.0 GHz	OCR Scan	AT-01672 AT-01672 duced70	PDF
TRANSISTOR 12 GHZ Abstract: ATF-36077 amplifier TRANSISTOR 12 GHZ pseudomorphic HEMT ATF-36077-STR transistor atf ku-band lnb satellite Text: 2–18 GHz Ultra Low Noise Pseudomorphic HEMT Technical Data ATF-36077 Features Description • PHEMT Technology • Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz • High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz	Original	ATF-36077 ATF-36077 ATF-36077-STR ATF-36077-TRl 5962-0193E 5965-8726E TRANSISTOR 12 GHZ amplifier TRANSISTOR 12 GHZ pseudomorphic HEMT ATF-36077-STR transistor atf ku-band lnb satellite	PDF

ATF-36077 Abstract: 36077 ATF-36077-STR pseudomorphic HEMT transistor atf ATF36077-STR 5965-8726E Text: 2–18 GHz Ultra Low Noise Pseudomorphic HEMT Technical Data ATF-36077 Features Description • PHEMT Technology • Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz • High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz	Original	ATF-36077 ATF-36077 ATF-36077-STR ATF-36077-TRl 36077 ATF-36077-STR pseudomorphic HEMT transistor atf ATF36077-STR 5965-8726E	PDF
2SA1424 Abstract: NEC 2532 276-137 2SA1978 2SC2351 NPN transistor mhz s-parameter 2sc2351 equivalent Text: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES High fT _0.2 2.8+ Equivalent NPN transistor is the 2SC2351. • Alternative of the 2SA1424. _0.2 2.9+ Symbol Rating Unit Collector to Base Voltage	Original	2SA1978 2SC2351. 2SA1424. 2SA1424 NEC 2532 276-137 2SA1978 2SC2351 NPN transistor mhz s-parameter 2sc2351 equivalent	PDF
Untitled Abstract: No abstract text available Text: Low Skew, 2:1 LVPECL MUX with 1:6 Fanout and Internal Termination ICS8S58035I DATA SHEET General Description Features The ICS8S58035I is a high speed 2-to-6 Differential-to-LVPECL Fanout Buffer. The ICS8S58035I is optimized for high speed and very low output skew, making it suitable for use in demanding applications	Original	ICS8S58035I 32-pin	PDF
SOT-143 MARKING 550 Abstract: 3 to 10 GHz mixer AT-41411 41411 AT-41411-BLK AT-41411-TR1 S21E avago marking -2 sot-143 Text: AT-41411 Surface Mount Low Noise Silicon Bipolar Transistor Chip Data Sheet Description Features Avago’s AT-41411 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41411 is housed in a low cost low parasitic 4 lead SOT-143 surface mount package. The	Original	AT-41411 AT-41411 OT-143 5989-4024EN 5989-2646EN SOT-143 MARKING 550 3 to 10 GHz mixer 41411 AT-41411-BLK AT-41411-TR1 S21E avago marking -2 sot-143	PDF
Untitled Abstract: No abstract text available Text: r e « HEW LETT mLUM P A C K A R D Low Current, High Perform ance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 F eatures Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:	OCR Scan	AT-32011 AT-32033 AT-32011: AT-32033: OT-23 OT-143 AT-32033 OT-23,	PDF
AT-41411 Abstract: AT-41411-BLK AT-41411-TR1 S21E Text: Surface Mount Low Noise Silicon␣ Bipolar Transistor Chip Technical Data AT-41411 Features • Low Noise Figure: 1.4 dB Typical at 1.0␣ GHz 1.8 dB Typical at 2.0␣ GHz • High Associated Gain: 18.0 dB Typical at 1.0␣ GHz 13.0 dB Typical at 2.0␣ GHz	Original	AT-41411 AT-41411 OT-143 OT-143 RN/50 AT-41411-BLK AT-41411-TR1 S21E	PDF
SOT-143 MARKING 550 Abstract: AT41411 AT-41411 AT-41411-BLK AT-41411-TR1 S21E Transistor General Purpose Transistor Text: Surface Mount Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41411 Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.8 dB Typical at 2.0 GHz • High Associated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz • High Gain-Bandwidth	Original	AT-41411 OT-143 AT-41411 AT41411 RN/50 5965-8924E SOT-143 MARKING 550 AT-41411-BLK AT-41411-TR1 S21E Transistor General Purpose Transistor	PDF
30533 Abstract: AT-30511 AT-30511-BLK AT-30511-TR1 AT-30533 AT-310 Text: AT-30511, AT-30533 Low Current, High Performance NPN Silicon Bipolar Transistors Data Sheet Description Features Avago’s AT-30511 and AT-30533 are high performance NPN bipolar transistors that have been optimized for maximum fT at low voltage operation, making them	Original	AT-30511, AT-30533 AT-30511 AT-30533 OT-23, OT-143. 5965-8918E 5989-2641EN 30533 AT-30511-BLK AT-30511-TR1 AT-310	PDF
Untitled Abstract: No abstract text available Text: General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA 0.9 GHz: 1 dB NF, 15.5 dB GA	Original	AT-41532 OT-323 SC-70) SC-70 OT-323) AT-41532 5965-6167E	PDF
transistor NEC D 587 Abstract: transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586 Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1±0.1 • Low Voltage Use 1.25±0.1 • Low Cob : 0.9 pF TYP. Emitter to Base Voltage	Original	2SC4885 transistor NEC D 587 transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586	PDF

TRANSISTOR ZO 109 MA Search Results

TRANSISTOR ZO 109 MA Result Highlights (5)

TRANSISTOR ZO 109 MA Datasheets Context Search

AT-32011

TRANSISTOR zo 109 ma

BFQ 58

transistor SMD MARKING CODE 772

AT41500

AT41586

AT-41586

AT-41586

IP3 MARK

Untitled

transistor zo 107

transistor zo 107

Untitled

TRANSISTOR 12 GHZ

ATF-36077

2SA1424

Untitled

SOT-143 MARKING 550

Untitled

AT-41411

SOT-143 MARKING 550

30533

Untitled

transistor NEC D 587