Untitled
Abstract: No abstract text available
Text: SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the
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NE58219
2SC5004
2SC5004
NE58219-A
2SC5004-A
NE58219-T1-A
2SC5004-T1-A
perfor516
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MHW1345
Abstract: catv amplifier Amplifier Modules motorola MHW7185CL FUJI GaAs FET CATV amplifier module transistor HATTELAND mhw6342t 85690 TRANSISTOR C 6090
Text: Device Data Book CATV DISTRIBUTION AMPLIFIER MODULE DEVICE DATA DL209/D Rev. 0 10/2002 CATV Distribution Amplifier Module Device Data Table of Contents Page Foreword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iii Data Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . iii
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DL209/D
MHW1345
catv amplifier
Amplifier Modules motorola
MHW7185CL
FUJI GaAs FET
CATV amplifier module transistor
HATTELAND
mhw6342t
85690
TRANSISTOR C 6090
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transistor zo 607
Abstract: zo 607 MA 2SC5004 2SC5004-T1 NE58219 NE58219-T1 nec 237 521 02 NE582
Text: DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the
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NE58219
2SC5004
2SC5004
NE58219
NE58219-T1
2SC5004-T1
transistor zo 607
zo 607 MA
2SC5004-T1
NE58219-T1
nec 237 521 02
NE582
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NEC JAPAN 237 521 02
Abstract: transistor zo 607 2SC5004
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
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2SC5004
2SC5004
NEC JAPAN 237 521 02
transistor zo 607
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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D 1437 transistor
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the
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2SC5004
D 1437 transistor
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TD2400
Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
Text: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5007
2SC5007
TD2400
transistor zo 607
2SC5007-T1
NEC 1555
AK-804 164-1-1
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NEC NF 932
Abstract: ZO 103 MA 75 623 2SC5009 2SC5009-T1 TD-2430 power transistor 3055
Text: DATA SHEET SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS in milimeters noise figure, high gain, and high current capability achieve a very wide 1.6± 0.1 0.8± 0.1 dynamic range and excellent linearity. This is achieved by direct nitride
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2SC5009
2SC5009
NEC NF 932
ZO 103 MA 75 623
2SC5009-T1
TD-2430
power transistor 3055
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NEC JAPAN 237 521 02
Abstract: nec 237 521 02 transistor zo 607 2SC5004
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SC5007
Abstract: 2SC5007-T1
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NEC 1357
Abstract: LA 8873 TRANSISTOR C 4460
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the
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2SC5004
2SC5004
NEC 1357
LA 8873
TRANSISTOR C 4460
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transistor NEC B 617
Abstract: nec. 5.5 473
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
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2SC5007
2SC5007
transistor NEC B 617
nec. 5.5 473
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2SC5009
Abstract: 2SC5009-T1
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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CI 74381
Abstract: X009
Text: 6N1135/ 6N1136 VISHAY Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated Features • • • • • • • • Isolation Test Voltage: 5300 VRMS Operating Temperature from -55 °C to +110 °C TTL Compatible
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6N1135/
6N1136
i179081
E52744
VDE0884)
6N1135
6N1136
6N1135-X007
D-74025
18-Jun-04
CI 74381
X009
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SFH613
Abstract: No abstract text available
Text: SFH6135/ SFH6136 VISHAY Vishay Semiconductors High Speed Optocoupler, 1 MBd, Transistor Output Features • • • • • • • Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 Mbit/s High Common-mode Interference Immunity Bandwidth 2.0 MHz
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SFH6135/
SFH6136
i179081
E52744
VDE0884)
D-74025
27-Apr-04
SFH613
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SFH6135
Abstract: SFH6136 VDE0884 DIN 268
Text: SFH6135/ SFH6136 VISHAY Vishay Semiconductors High Speed Optocoupler, 1 MBd, Transistor Output Features • • • • • • • Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 Mbit/s High Common-mode Interference Immunity Bandwidth 2.0 MHz
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SFH6135/
SFH6136
i179081
E52744
D-74025
20-Nov-03
SFH6135
SFH6136
VDE0884
DIN 268
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SFH6135
Abstract: SFH6136 VDE0884
Text: SFH6135/ SFH6136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Transistor Output Features • • • • • • • • • Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 Mbit/s High Common-mode Interference Immunity Bandwidth 2.0 MHz
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SFH6135/
SFH6136
2002/95/EC
2002/96/EC
UL1577,
E52744
VDE0884)
i179081
SFH61s
D-74025
SFH6135
SFH6136
VDE0884
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SFH6135
Abstract: No abstract text available
Text: SFH6135/ SFH6136 VISHAY Vishay Semiconductors High Speed Optocoupler, 1 MBd, Transistor Output Features • • • • • • • Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 Mbit/s High Common-mode Interference Immunity Bandwidth 2.0 MHz
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SFH6135/
SFH6136
i179081
E52744
VDE0884)
D-74025
20-Nov-03
SFH6135
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6N136-X007
Abstract: optocoupler 6n136 6N135-X007 k6n135 6N135 6N136 6N136-X006 VDE0884 ic 6n136
Text: 6N135/ 6N136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output Features • • • • • • • • • Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 Mbit/s High Common-Mode Interference Immunity
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6N135/
6N136
2002/95/EC
2002/96/EC
UL1577,
E52744
VDE0884)
i179081
D-74025
26-Oct-04
6N136-X007
optocoupler 6n136
6N135-X007
k6n135
6N135
6N136
6N136-X006
VDE0884
ic 6n136
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6N135
Abstract: 6N135-X007 6N136 6N136-X006 6N136-X007 6N136-X009 VDE0884
Text: 6N135/ 6N136 VISHAY Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output Features • • • • • • • Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 Mbit/s High Common-Mode Interference Immunity
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6N135/
6N136
i179081
E52744
VDE0884)
6N135
6N135
6N136
D-74025
26-Apr-04
6N135-X007
6N136-X006
6N136-X007
6N136-X009
VDE0884
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SFH163
Abstract: SFH6135 SFH6136 VDE0884
Text: SFH6135/ SFH6136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Transistor Output Features • • • • • • • • • Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 Mbit/s High Common-mode Interference Immunity Bandwidth 2.0 MHz
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SFH6135/
SFH6136
2002/95/EC
2002/96/EC
UL1577,
E52744
VDE0884)
i179081
SFH61ed
08-Apr-05
SFH163
SFH6135
SFH6136
VDE0884
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K6N135
Abstract: 83604 6N135 6N136 VDE0884 6n136 smd 6N136 IC
Text: 6N135/ 6N136 VISHAY Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output Features • • • • • • • Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 Mbit/s High Common-Mode Interference Immunity
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6N135/
6N136
i179081
E52744
VDE0884)
6N135
6N135
6N136
D-74025
04-Dec-03
K6N135
83604
VDE0884
6n136 smd
6N136 IC
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BFT65
Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions
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