Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK581-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope
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BUK581-100A
OT223
BUK581
-100A
OT223.
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smd transistor marking n3
Abstract: MARKING SMD PNP TRANSISTOR Zr transistor smd ZR MARKING SMD pnp TRANSISTOR ec N3 smd transistor transistor smd marking LE transistor smd ZR 55
Text: DISCRETE SEMICONDUCTORS 2PC4617J NPN general purpose transistor Preliminary specification Supersedes data of 1998 Nov 10 Philips Semiconductors 1999 May 04 PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN general purpose transistor 2PC4617J
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2PC4617J
2PC4617J
SC-89
OT490)
SCA63
5002/00/02/pp8
smd transistor marking n3
MARKING SMD PNP TRANSISTOR Zr
transistor smd ZR
MARKING SMD pnp TRANSISTOR ec
N3 smd transistor
transistor smd marking LE
transistor smd ZR 55
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transistor smd ZR
Abstract: SMD MARKING CODE TRANSISTOR 501 MARKING SMD PNP TRANSISTOR Zr smd transistor marking zr 2PC4617JR TRANSISTOR SMD MARKING CODE al TRANSISTOR SMD MARKING CODE SP 2108 npn transistor 2PC4617J 2PC4617JS
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PC4617J NPN general purpose transistor Preliminary specification Supersedes data of 1998 Nov 10 1999 May 04 Philips Semiconductors Preliminary specification NPN general purpose transistor 2PC4617J FEATURES PINNING
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M3D425
2PC4617J
SCA63
115002/00/02/pp8
transistor smd ZR
SMD MARKING CODE TRANSISTOR 501
MARKING SMD PNP TRANSISTOR Zr
smd transistor marking zr
2PC4617JR
TRANSISTOR SMD MARKING CODE al
TRANSISTOR SMD MARKING CODE SP
2108 npn transistor
2PC4617J
2PC4617JS
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bf 194 pin configuration
Abstract: BA12004B BA12001 BA12001B BA12003B BA12003BF Seven Transistor Array PNP cmos open collector array 7ch pnp DARLINGTON TRANSISTOR ARRAY
Text: BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs High voltage, high current Darlington transistor array BA12001B / BA12003B / BA12003BF / BA12004B The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor
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BA12001B
BA12003B
BA12003BF
BA12004B
BA12001B,
BA12003B,
bf 194 pin configuration
BA12004B
BA12001
Seven Transistor Array PNP
cmos open collector array
7ch pnp DARLINGTON TRANSISTOR ARRAY
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2P transistor
Abstract: l43 transistor
Text: DISCRETE SEMICONDUCTORS a ffi SHEET 2PC4617J NPN general purpose transistor 1998 Nov 10 P relim inary specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN general purpose transistor 2PC4617J FEATURES PINNING
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2PC4617J
2PC4617J
SC-89
SCA60
115104/00/01/pp8
2P transistor
l43 transistor
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2PD601A
Abstract: 2PB709A 2PD601AQ 2PD601AR 2PD601AS BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 2PD601A NPN general purpose transistor Product specification Supersedes data of 1997 Jun 20 1999 Apr 23 Philips Semiconductors Product specification NPN general purpose transistor 2PD601A FEATURES PINNING
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M3D114
2PD601A
SC-59
2PB709A.
2PD601AQ
2PD601AS
MAM321
2PD601AR
SCA63
2PD601A
2PB709A
2PD601AQ
2PD601AR
2PD601AS
BP317
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2SC738
Abstract: 2SC7 FT440
Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SC738 FOR FM RADIO HIGH FREQUENCY AMPLIFY, FREQUENCY EXCHANGE, LOCAL OSCILATION APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC738 is a resin sealed silicon NPN epitaxial type transistor
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2SC738
2SC738
100MHz,
440MHztyp
SC-43
100MHz
2SC7
FT440
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23 sot346
Abstract: SC59 philips transistor number code book FREE 2PD601A
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 2PD601A NPN general purpose transistor Product specification Supersedes data of 1999 Apr 23 2001 Nov 19 Philips Semiconductors Product specification NPN general purpose transistor 2PD601A FEATURES PINNING
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M3D114
2PD601A
SC-59
OT346)
2PB709A.
2PD601AQ
2PD60mail
SCA73
613514/05/pp8
23 sot346
SC59 philips
transistor number code book FREE
2PD601A
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BUK455-100A
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK455-100A/B
BUK455
-100A
-100B
T0220AB
BUK455-100A
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is Intended fcr use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK455-600B
T0220AB
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PDF
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YBs transistor
Abstract: transistor AC 307
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK453-500B
T0220AB
YBs transistor
transistor AC 307
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700 v power transistor
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device
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BUK7635-55
SQT404
700 v power transistor
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PDF
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Zr 1100
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK444-2O0A/B
BUK444
-200A
-200B
PINNING-SOT186
Zr 1100
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TRANSISTOR C 460
Abstract: 2SB709A 2SC2404 XN4683
Text: Composite Transistors XN4683 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm +0.2 For high-frequency amplification/For general amplification 2.8 –0.3 +0.25 1.5 –0.05 3 0.4±0.2 Parameter (Ta=25˚C) Symbol
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XN4683
TRANSISTOR C 460
2SB709A
2SC2404
XN4683
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2SB0709A
Abstract: 2SB709A 2SC2404 XN04683 XN4683
Text: Composite Transistors XN04683 XN4683 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm +0.2 For high-frequency amplification/For general amplification 2.8 –0.3 +0.25 1.5 –0.05 3 0.4±0.2 Parameter (Ta=25˚C)
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XN04683
XN4683)
2SB0709A
2SB709A
2SC2404
XN04683
XN4683
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2108 npn transistor
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 2PC4617 NPN general purpose transistor Product specification Supersedes data of 1998 Jul 21 1999 May 21 Philips Semiconductors Product specification NPN general purpose transistor 2PC4617 FEATURES PINNING • Low current max. 100 mA
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M3D173
2PC4617
SC-75
2PA1774.
MAM348
115002/00/03/pp8
2108 npn transistor
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transistor smd ZR
Abstract: MARKING SMD PNP TRANSISTOR Zr transistor smd ZR npn TRANSISTOR SMD MARKING CODE UA transistor SMD BP smd transistor marking zr smd code marking sot23 philips transistor smd code TRANSISTOR SMD MARKING CODE transistor ZR 08
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PC4617J NPN general purpose transistor Product specification Supersedes data of 1999 May 04 2001 Aug 03 Philips Semiconductors Product specification NPN general purpose transistor 2PC4617J PINNING FEATURES • Power dissipation comparable to SOT23
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M3D425
2PC4617J
SCA73
613514/03/pp8
transistor smd ZR
MARKING SMD PNP TRANSISTOR Zr
transistor smd ZR npn
TRANSISTOR SMD MARKING CODE UA
transistor SMD BP
smd transistor marking zr
smd code marking sot23
philips transistor smd code
TRANSISTOR SMD MARKING CODE
transistor ZR 08
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon General Purpose Amplifier Transistor MSD1819A-RT1 Motorola Preferred Devices This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package
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MSD1819A-RT1
SC-70/SOT-323
7-inch/3000
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transistor power 5w
Abstract: Transistor 5503 transistor 1271 SILICON npn POWER TRANSISTOR c 869 D 595 transistor transistor J17 2052-5636-02 transistor C 1344 transistor Common Base configuration j170
Text: an AMP company CW Power Transistor, ,2.3 GHz 5W PH2323-5 v2.00 Features l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System
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PH2323-5
transistor power 5w
Transistor 5503
transistor 1271
SILICON npn POWER TRANSISTOR c 869
D 595 transistor
transistor J17
2052-5636-02
transistor C 1344
transistor Common Base configuration
j170
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PDF
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2SB1301
Abstract: No abstract text available
Text: SILICON TRANSISTOR 2S B 1 30 1 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLO DESCRIPTION 2S813Û1 is designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package
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2S813
2SD1952
2SB1301
2SB1301
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2SB1301
Abstract: MARKING Z.R 2SD1952 marking zr IEI-1213 MEI-1202 MF-1134
Text: DATA SHEET SILICON TRANSISTOR 2S B 1301 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION 2SB 1301 is designed for audio frequency pow er am plifier and switching application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS
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2SB1301
2SB1301
2SD1952
MARKING Z.R
2SD1952
marking zr
IEI-1213
MEI-1202
MF-1134
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transistor 1gs
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK453-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,
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BUK453-60A/B
BUK473-60A/B
BUK473
PINNING-SOT186A
1E-03
IE-05
1E-06
transistor 1gs
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK453-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,
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OCR Scan
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BUK453-100A/B
BUK473-100A/B
BUK473
-100A
-100B
PINNING-SOT186A
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PDF
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cd 1191 cb
Abstract: CD 1691 CB
Text: wm m t BFP67/BFP67R/BFP67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain per
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BFP67/BFP67R/BFP67W
BFP67
BFP67R
BFP67W
20-Jan-99
cd 1191 cb
CD 1691 CB
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PDF
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