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    TRANSISTORS 6822 Search Results

    TRANSISTORS 6822 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS 6822 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mrf5s19060nr1

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 7, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF5S19060N MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060NR1

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF5S19060N MRF5S19060NBR1 MRF5S19060NR1 MRF5S19060NB
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 7, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF5S19060N MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060NR1 A113 A114 A115 AN1955 C101 JESD22 MRF5S19060N MRF5S19060NBR1 MRF5S19060NB

    12065G105AT2A

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF7S18125BH MRF7S18125BHR3 MRF7S18125BHSR3 MRF7S18125BHR3 12065G105AT2A

    MRF7S18125

    Abstract: J281 MRF7 Z9.1 A114 A115 AN1955 C101 JESD22 RF35
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18125AH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125AHR3 MRF7S18125AHSR3 Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF7S18125AH MRF7S18125AHR3 MRF7S18125AHSR3 38yees, MRF7S18125AHR3 MRF7S18125 J281 MRF7 Z9.1 A114 A115 AN1955 C101 JESD22 RF35

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18125AH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125AHR3 MRF7S18125AHSR3 Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF7S18125AH MRF7S18125AHR3 MRF7S18125AHSR3 MRF7S18125AHR3

    12065G105AT2A

    Abstract: j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF7S18125BH MRF7S18125BHR3 MRF7S18125BHSR3 MRF7S18125BHR3 12065G105AT2A j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35

    2N3501U4

    Abstract: 2N3499U4
    Text: 2N3498U4 thru 2N3501U4 Qualified Levels: JAN, JANTX, and JANTXV NPN SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/366 DESCRIPTION This family of 2N3498U4 through 2N3501U4 epitaxial planar transistors are military qualified


    Original     		PDF 2N3498U4 2N3501U4 MIL-PRF-19500/366 2N3501U4 O-205AD) 2N3498 2N3501 2N3499U4

    SKM200GB122D

    Abstract: skm 191 semikron SKHI 22 AR semikron SKm GAL 123D SEMIKRON SKM 100 GAL 123D semikron SKHI 21 AR SKM300GB123D 062d skm 200 123d transistor SKM200GB101D
    Text: 6. SEMITRANS IGBT Module Insulated Gate Bipolar Transistors Merkmale Typische Anwendungen • MOS-Eingang (spannungsgesteuert) • Motorsteuerung Drehstromantriebsumrichter • N-Kanal • Gleichstrom-Servo- und Roboter-Antriebe • Reihe mit niedriger Sättigungsspannung erhältlich


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/543 DESCRIPTION This family of 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 switching transistors are


    Original     		PDF 2N6764T1, 2N6766T1, 2N6768T1 2N6770T1 MIL-PRF-19500/543 2N6770T1 O-204AE

    DD 127 D transistor

    Abstract: T4-LDS-0101-1
    Text: 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/543 DESCRIPTION This family of 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 switching transistors are


    Original     		PDF 2N6764T1, 2N6766T1, 2N6768T1 2N6770T1 MIL-PRF-19500/543 O-204AE DD 127 D transistor T4-LDS-0101-1

    DD 127 D transistor

    Abstract: No abstract text available
    Text: 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/543 DESCRIPTION This family of 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 switching transistors are


    Original     		PDF 2N6764T1, 2N6766T1, 2N6768T1 2N6770T1 MIL-PRF-19500/543 O-204AE DD 127 D transistor

    cc 3053

    Abstract: 2N3440U4
    Text: 2N3439U4 thru 2N3440U4 Compliant NPN LOW POWER SILICON TRANSISTOR Qualified Levels: JAN, JANTX, JANTXV and JANS* Qualified per MIL-PRF-19500/368 *2N3440U4 only DESCRIPTION This family of 2N3439U4 through 2N3440U4 high-frequency, epitaxial planar transistors


    Original     		PDF 2N3439U4 2N3440U4 MIL-PRF-19500/368 2N3440U4 LDS-0022-2, cc 3053

    Untitled

    Abstract: No abstract text available
    Text: 2N3506L thru 2N3507AL Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/349 DESCRIPTION This family of 2N3506L through 2N3507AL high-frequency, epitaxial planar transistors feature


    Original     		PDF 2N3506L 2N3507AL MIL-PRF-19500/349 2N3507AL 2N3506 2N3507 T4-LDS-0016-1,

    2N3507 equivalent

    Abstract: 2N3506 2N3507
    Text: 2N3506 thru 2N3507A Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/349 DESCRIPTION This family of 2N3506 through 2N3507A high-frequency, epitaxial planar transistors feature


    Original     		PDF 2N3506 2N3507A MIL-PRF-19500/349 T4-LDS-0016, 2N3507 equivalent 2N3507

    2N3440UA

    Abstract: No abstract text available
    Text: 2N3439UA thru 2N3440UA Qualified Levels: JAN, JANTX, JANTXV and JANS NPN LOW POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/368 DESCRIPTION This family of 2N3439UA through 2N3440UA high-frequency, epitaxial planar transistors


    Original     		PDF 2N3439UA 2N3440UA MIL-PRF-19500/368 LDS-0022-3,

    Untitled

    Abstract: No abstract text available
    Text: 2N3506L thru 2N3507AL Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/349 DESCRIPTION This family of 2N3506L through 2N3507AL high-frequency, epitaxial planar transistors feature


    Original     		PDF 2N3506L 2N3507AL MIL-PRF-19500/349 2N3506 2N3507 T4-LDS-0016-1,

    2N3439 JANS

    Abstract: No abstract text available
    Text: 2N3439UA thru 2N3440UA Qualified Levels: JAN, JANTX, JANTXV and JANS NPN LOW POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/368 DESCRIPTION This family of 2N3439UA through 2N3440UA high-frequency, epitaxial planar transistors


    Original     		PDF 2N3439UA 2N3440UA MIL-PRF-19500/368 2N3440UA LDS-0022-3, 2N3439 JANS

    Untitled

    Abstract: No abstract text available
    Text: 2N3418U4 thru 2N3421U4 Available on commercial versions Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. The


    Original     		PDF 2N3418U4 2N3421U4 MIL-PRF-19500/393 LDS-0192-2,

    2N3421

    Abstract: 2N3420 JANTXV 2N3421 equivalent 2N3419
    Text: 2N3418 thru 2N3421 Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/393 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. These


    Original     		PDF 2N3418 2N3421 MIL-PRF-19500/393 2N3418, 2N3419, 2N3420, 2N3421, T4-LDS-0192, 2N3420 JANTXV 2N3421 equivalent 2N3419

    Untitled

    Abstract: No abstract text available
    Text: 2N3439L thru 2N3440L Qualified Levels: JAN, JANTX, JANTXV and JANS NPN LOW POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/368 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage.


    Original     		PDF 2N3439L 2N3440L MIL-PRF-19500/368 2N3440L LDS-0022-1,

    2n3501ub

    Abstract: microsemi ub package tape reel jans2n3501ub
    Text: JANS 2N3501UB Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR compliant Qualified per MIL-PRF-19500/366 DESCRIPTION This family of JANS 2N3501, epitaxial, planar transistors are military qualified in five RHA


    Original     		PDF 2N3501UB MIL-PRF-19500/366 2N3501, T4-LDS-0056-2, microsemi ub package tape reel jans2n3501ub

    Untitled

    Abstract: No abstract text available
    Text: 2N2857UB Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor also available in commercial


    Original     		PDF 2N2857UB MIL-PRF-19500/343 2N2857UB 2N2857. T4-LDS-0223-1,

    2N3419

    Abstract: No abstract text available
    Text: 2N3418 thru 2N3421 Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/393 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. These


    Original     		PDF 2N3418 2N3421 MIL-PRF-19500/393 2N3421 2N3418, 2N3419, 2N3420, 2N3421, T4-LDS-0192, 2N3419

    2n3440 equivalent

    Abstract: JAN 2N3439 UA 2N3439 JANTX
    Text: 2N3439 thru 2N3440 Qualified Levels: JAN, JANTX, JANTXV and JANS NPN LOW POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/368 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage.


    Original     		PDF 2N3439 2N3440 MIL-PRF-19500/368 2N3440 LDS-0022, 2n3440 equivalent JAN 2N3439 UA 2N3439 JANTX