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    TRANSISTORS A102 Search Results

    TRANSISTORS A102 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS A102 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    A1022

    Abstract: D601A c2480 C4561 S-Mini D1938 transistor A1022 D602A XN06506
    Text: Transistors Selection Guide by Applications and Functions •5-Pin S-Mini Type (D8)*5-Pin Mini Type (D15)*6-Pin S-Mini Type (D9)*6-Pin Mini Type (D16) Package Transistor, FET # Transistors (XN: 5- and 6-Pin Mini Type Package, XP: 5- and 6-Pin S-Mini Type Package)


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    XN6501 XP6501 D601A C4444 C2480 C3904 C4561 XN6543 C2404 D1149 A1022 D601A S-Mini D1938 transistor A1022 D602A XN06506 PDF

    D1915

    Abstract: D1915 Transistors TRANSISTOR D1915 c3904 D1915 transistor B709A A1022 xp5555 XN4501 XP1201
    Text: Transistors Selection Guide by Applications and Functions •5 Pin S Mini Type (D6) *5 Pin Mini Type (D11) *6 Pin S Mini Type (D7) *6 Pin Mini Type (D12) Package Transistor, FET A Preliminary # Resistor Built-in Transistors (XN: 5 and 6 Pin Mini Type Package, XP: 5 and 6 Pin S Mini Type Package)


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    XN1401 XP1401 XN1501 XP1501 XN1601 XP1601 XN1B301 XP1B301 XN1C301 XP1C301 D1915 D1915 Transistors TRANSISTOR D1915 c3904 D1915 transistor B709A A1022 xp5555 XN4501 XP1201 PDF

    D1915

    Abstract: D1915 Transistors d1915f TRANSISTOR D1915 D1915 transistor XN1111 mini type (D7)
    Text: Transistors Selection Guide by Applications and Functions • 5 Pin S Mini Type (D6) *5 Pin Mini Type (D11) *6 Pin S Mini Type (D7) *6 Pin Mini Type (D12) Package Transistor, FET A Preliminary # Resistor Built-in Transistors (XN: 5 and 6 Pin Mini Type Package, XP: 5 and 6 Pin S Mini Type Package)


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    XN1111 XP1111 XN1112 XP1112 XN1113 XP1113 XN1114 XP1114 XN1115 XP1115 D1915 D1915 Transistors d1915f TRANSISTOR D1915 D1915 transistor mini type (D7) PDF

    TRANSISTOR D1915

    Abstract: D1915 transistor D1915 Transistors D1915 n227
    Text: Transistors Selection Guide by Applications and Functions • 5 Pin S Mini Type (D6) • 5 Pin Mini Type (D11) * 6 Pin S Mini Type (D7) • 6 Pin Mini Type (D12) Package Transistor, FET A Prelim inary •R e s is to r Built-in Transistors (XN: 5 and 6 Pin Mini Type Package, XP: 5 and 6 Pin S Mini Type Package)


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    XN1111 XP1111 XN1112 XP1112 XP1113 XN1114 XP1114 XN1115 XP1115 XN1116 TRANSISTOR D1915 D1915 transistor D1915 Transistors D1915 n227 PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: APL5331 3A Bus Termination Regulator Features General Description • The APL5331 linear regulator is designed to provide a regulated voltage with bi-directional output current for DDR-SDRAM termination. The APL5331 integrates two power transistors to source or sink current up to 3A.


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    APL5331 APL5331 O-252 PDF

    transistor buz 36

    Abstract: A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A
    Text: IEMENS AKTIENGESELLSCHAF 03E D • 7 ^ 3*7-0/ ô23StQS QOlSbBS ö « S I E G Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancem ent types in plastic package TO-220 AB Typ Type ^DS max V A


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    23StQS T0-220 O-220 BUZ10S2 Z72AL Z73AL O-218 transistor buz 36 A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A PDF

    actel 1240a

    Abstract: TI1139 UI02 1280xl actel 1240xl 132 pga UJ-01 U1H-18 110E06 SI 1020A Actel A1225
    Text: Actel Device Reliability Report Actel’s field programmable gate arrays FPGAs are currently available in five product families—ACT 1, ACT 2, 1200XL, 3200DX, and ACT 3. The ACT 1 family consists of the A1010 and A1020, which are 1200- and 2000-gate FPGAs,


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    1200XL, 3200DX, A1010 A1020, 2000-gate A1225, A1240, A1280 1200XL A1225XL, actel 1240a TI1139 UI02 1280xl actel 1240xl 132 pga UJ-01 U1H-18 110E06 SI 1020A Actel A1225 PDF

    transistor A1010

    Abstract: A1020 transistor ACTEL A1010 32140DX A1010 A1020 A1225A A1225XL A1240A A1240XL
    Text: Testing and Programming Actel Field Programmable Gate Arrays FPGAs Testing has long been a struggle for users of masked gate arrays. To avoid board-level, system-level, or even possible field failures, the system designer must expend great effort in developing test vectors for gate array designs. Even after the


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    ACTEL burn-in

    Abstract: antifuse programming technology antifuse
    Text: Application Note Testing and Burn-In of Actel FPGAs I n tro du ct i on Burn-in tests, for operating devices dynamically at a high temperature and extrapolating the failure rate to typical operating conditions, are a requirement for HiRel applications on logic devices. System designers must spend


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    Untitled

    Abstract: No abstract text available
    Text: VN2410 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


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    VN2410 VN2410 DSFP-VN2410 A102907 PDF

    VN2406L-G

    Abstract: No abstract text available
    Text: VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


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    VN2406 VN2406 DSFP-VN2406 A102907 VN2406L-G PDF

    MARKING VN

    Abstract: vn0606
    Text: VN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


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    VN0606 VN0606 DSFP-VN0606 A102907 MARKING VN PDF

    Untitled

    Abstract: No abstract text available
    Text: VN0808 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


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    VN0808 VN0808 DSFP-VN0808 A102907 PDF

    Untitled

    Abstract: No abstract text available
    Text: APL5331 3A Bus Termination Regulator Features • • • • General Description Provide Bi-direction Current The APL5331 linear regulator is designed to provide a regulated voltage with bi-directional output current for - Sourcing or Sinking Current up to 3A


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    APL5331 APL5331 O-252 PDF

    apl5331

    Abstract: JEDEC Jc-11 free A102 APM2300
    Text: APL5331 3A Bus Termination Regulator Features General Description • The APL5331 linear regulator is designed to provide a regulated voltage with bi-directional output current for Provide Bi-direction Current - Sourcing or Sinking Current up to 3A • •


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    APL5331 APL5331 JEDEC Jc-11 free A102 APM2300 PDF

    Untitled

    Abstract: No abstract text available
    Text: VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


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    VN1206 DSFP-VN1206 A102108 PDF

    Untitled

    Abstract: No abstract text available
    Text: VN0300 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


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    VN0300 DSFP-VN0300 A102108 PDF

    Untitled

    Abstract: No abstract text available
    Text: VN3515 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


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    VN3515 DSFP-VN3515 A102108 PDF

    Untitled

    Abstract: No abstract text available
    Text: VN4012 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


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    VN4012 DSPD-3TO92N3, D080408. DSFP-VN4012 A102108 PDF

    DSFP-VN0104

    Abstract: No abstract text available
    Text: VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


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    VN0104 VN0104 DSFP-VN0104 A102907 PDF

    VN0106

    Abstract: No abstract text available
    Text: VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


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    VN0106 VN0106 DSFP-VN0106 A102907 PDF

    ic 0808 pin diagram

    Abstract: HIPAC Semiconductor HPL5331 HPL5331G5C-TR HPL5331KAC-TR HPL5331KC-TR HPL5331U5C-TR marking a8 SOP-8
    Text: HPL5331 3A Bus Termination Regulator Features General Description Cont. • On-chip thermal shutdown provides protection against any combination of overload that would create excessive junction temperature. The output voltage of HPL5331 track the voltage at VREF pin. A resistor


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    HPL5331 HPL5331 Sourcin80 O-263 O-252 ic 0808 pin diagram HIPAC Semiconductor HPL5331G5C-TR HPL5331KAC-TR HPL5331KC-TR HPL5331U5C-TR marking a8 SOP-8 PDF

    APL5332

    Abstract: PCT resistor 1.5k A102 APM2300A marking 303w
    Text: APL5332 0.8V Reference LDO with Source-Sink & Output Selection Functions Features General Description • LDO with Source and Sink Capabilities • Single Input Voltage The APL5332 is a precise CMOS LDO with source sink and output selection functions. The APL5332 offers 2%


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    APL5332 APL5332 PCT resistor 1.5k A102 APM2300A marking 303w PDF