TRANSISTORS BC 225 Search Results

TRANSISTORS BC 225 Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTORS BC 225 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BC238 Abstract: BCY59A ZTX304 ZTX302 BC107A BC107B BC182 BC237 BC546A BC546B Text: SEMICONDUCTOR DICE NPN SMALL SIGNAL TRANSISTORS V CBO V CEO IcBO Min. Min. Max. at V CB Volts Volts BC 546A BC546B Z TX304 BC Y65EA BC182 BC 107A BC107B BC237 BC 547A BC547B BC550B BC550C B C Y59A BC Y59B BCY59C BCY59D 2N930 Z TX303 BC183 BC184 ZTX302 ZTX301	OCR Scan	BC546A BC546B ZTX304 BCY65EA BC182 BC107A BC107B BC237 BC547A BC548B BC238 BCY59A ZTX302	PDF
BC154 Abstract: BC153 transistor BC 153 BC 154 transistors BC 225 bc audio transistors IT 153 bc 153 bc154-1 18x10-4 Text: BC 153 BC 154 SILICON PLANAR PNP LOW-NOISE AUDIO AMPLIFIERS The BC 153 and BC 154 are silicon planar epitaxial PNP transistors in TO-18 epoxy package. They are specifically designed for use in low-noise audio preamplifiers. ABSOLUTE MAXIMUM RATINGS VcBO VcEO	OCR Scan	P040-A 8x10-4 9x10-4 BC154 BC153 transistor BC 153 BC 154 transistors BC 225 bc audio transistors IT 153 bc 153 bc154-1 18x10-4	PDF
BC817W Abstract: BC818W Text: BC 817W / BC 818W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 NPN Power dissipation – Verlustleistung 225 mW	Original	OT-323 UL94V-0 17-16W 17-25W 17-40W 18-25W 18-40W 18-16W BC817W BC818W	PDF
Untitled Abstract: No abstract text available Text: BC 807W / BC 808W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 PNP Power dissipation – Verlustleistung 225 mW	Original	OT-323 UL94V-0 07-16W 08-16W 08-25W 07-25W 07-40W 08-40W	PDF
Untitled Abstract: No abstract text available Text: BC 817W / BC 818W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 NPN Power dissipation – Verlustleistung 225 mW	Original	OT-323 UL94V-0 17-16W 18-16W 18-25W 17-25W 17-40W 18-40W	PDF
BC807W Abstract: BC808W hFE Group Text: BC 807W / BC 808W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 PNP Power dissipation – Verlustleistung 225 mW	Original	OT-323 UL94V-0 07-16W 07-25W 07-40W 08-25W 08-40W 08-16W BC807W BC808W hFE Group	PDF
2N6218 Abstract: BC530 T1923 triac mw 137 BC532 BFW45 tr bc 337 393P BC394 BC533 Text: SE MIC ONDUCT ORS INC CHE D \| fll3bbSG Q00D303 fi \| T-^ High V oltage Transistors T YPE NO. t a. M A XIM U M R A T IN G S VCE SAT> H FE V C EO Pd (mW •c IC M " (m A) (V ) min « o a. C A SE BC 236 BC 285 BC 312 BC 393 BC394 N N N P N TO-106 TO-18 TO-39	OCR Scan	013bbS0 D0QD303 O-106 BC394 BC530 O-92A BC533 2N6218 T1923 triac mw 137 BC532 BFW45 tr bc 337 393P	PDF
2n6218 Abstract: 2sC 4927 393P BC285 BC532 C 4927 triac mw 137 BC394 BC530 BC533 Text: SE MIC ONDUCT ORS INC CHE D \| fll3bbSG Q00D303 fi \| T-^ High Voltage Transistors T YPE NO. t a. M A XIM U M R A T IN G S VCE SAT> H FE V C EO Pd (mW •c IC M " (m A) (V ) min « o a. C A SE BC 236 BC 285 BC 312 BC 393 BC394 N N N P N TO-106 TO-18 TO-39 TO-18	OCR Scan	013bbS0 D0QD303 O-106 BC394 BC530 O-92A BC533 2n6218 2sC 4927 393P BC285 BC532 C 4927 triac mw 137	PDF
CDIL PN2222A Abstract: ip 2222A PN2222 PN2222A Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS E PN2222 PN2222A CBE TO-92 BC Complementary Silicon Transistors For Switching And Linear Applications DC Amplifier & Driver For Industrial Applications.	Original	ISO/TS16949 PN2222 PN2222A 25deg C-120 CDIL PN2222A ip 2222A PN2222 PN2222A	PDF
ip 2222A Abstract: PN2222 PN2222A Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS E PN2222 PN2222A CBE TO-92 BC Complementary Silicon Transistors For Switching And Linear Applications DC Amplifier & Driver For Industrial Applications.	Original	PN2222 PN2222A 25deg C-120 ip 2222A PN2222 PN2222A	PDF
2222A Abstract: ip 2222A PN2222 PN2222A BOD 1-04 2222 cbe T 2222A Text: Transys Electronics L I M I T E D NPN SILICON PLANAR SWITCHING TRANSISTORS E PN2222 PN2222A CBE TO-92 BC Complementary Silicon Transistors For Switching And Linear Applications DC Amplifier & Driver For Industrial Applications. ABSOLUTE MAXIMUM RATINGS Ta=25deg C unless otherwise specified	Original	PN2222 PN2222A 25deg 2222A ip 2222A PN2222 PN2222A BOD 1-04 2222 cbe T 2222A	PDF
bcw 94 b Abstract: BF-139 F 540 NS BSY54 BCW95B BSY55 Text: CB 76 (CB 6} (CB 7) Silicon NPN transistors, general purpose (continued) Tamb= 25 °C Transistors N P N silicium , usage générai (suite) (mW) VCEO (V) h21 E VCER* h21E V c E X a min max F 139 Bc F 139 B<> F 139 B TO 18 TO 18 540 540 540 330 330 40 60 60	OCR Scan		PDF
2N4402 Abstract: 2N4403 2N4402 LEAD FREE 1-B215 Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N4402 / 2N4403 PNP SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E BC General Purpose Switching And Amplifier Applications	Original	2N4402 2N4403 C-120 4403Rev 040206E 2N4403 2N4402 LEAD FREE 1-B215	PDF
2N3906 Abstract: 2N3906 TO-92 2N3906 plastic 2N3905 Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3905 / 2N3906 PNP SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E BC General Purpose Switching And Amplifier Applications	Original	2N3905 2N3906 C-120 3906Rev 071105E 2N3906 2N3906 TO-92 2N3906 plastic	PDF

Untitled Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3905 / 2N3906 PNP SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E BC General Purpose Switching And Amplifier Applications	Original	2N3905 2N3906 C-120 3906Rev 071105E	PDF
Untitled Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N4400 / 2N4401 NPN SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E BC General Purpose Switching And Amplifier Applications	Original	2N4400 2N4401 C-120 4401Rev 071105E	PDF
Untitled Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N4402 / 2N4403 PNP SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E BC General Purpose Switching And Amplifier Applications	Original	2N4402 2N4403 C-120 4403Rev 040206E	PDF
Untitled Abstract: No abstract text available Text: WILLAS FM120-M+ BC:$LT1THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features NPN Silicon process design, excellent power dissipation offers • Batch better reverse leakage current and thermal resistance.	Original	FM120-M+ FM1200-M OD-123+ OD-123H FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH	PDF
629t Abstract: S628T S629T S627T E2746 S627 Y001 Scans-0014927 Text: ii TELEFUNKEN ELECTRONIC : 1?E D • ô 't ë O O 'ib D O C H bC H S 627T • S 6 2 8 T - S 629T TftKUKFOiMKIlK] electronic Crttbve 1êeftnotog*e$ T - 3 3 -O S ' Silicon NPN Epitaxial Planar Power Transistors Applications: General at high supply voltages Features:	OCR Scan	T-33-osr S627T S628T S629T S628T T-33-05 160VrrMM S629T 629t E2746 S627 Y001 Scans-0014927	PDF
2N5449 Abstract: MPS-K72 2N3694 2N3693 2N5143 2N5447 k72 npn k72 transistor Three-Five 2N5127 Text: Econoline P la stic -M o ld e d Silicon S E P T ” Transistors i GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS TO-92 Package E BC Pinning D -C C U R R E N T G A IN >- Type No. cc < o CL Pd (h F E ) Lim its T a = V(BR\| V(BR) V(BR) ICBO Conditions nA 25 C C BO CEO EBO	OCR Scan	2N3694 2N5127 2N5131 2N5132 5N5451 TP5137 TP5139 TP5824 TP5825 TP5826 2N5449 MPS-K72 2N3693 2N5143 2N5447 k72 npn k72 transistor Three-Five	PDF
2N5551YCECB Abstract: No abstract text available Text: I Small Signal Transistors TO-92 Case TO-92 T Y P E NO. F A M IL Y LEAD v E B O C B O Ï V C BC nA (V) (V) (V) 'C E S •V CES * *'C E V MIN MIN MAX (V) M IN 2N2712 NPN AMPL/SWITCH ECB 18 18 5.0 500 18 v CE hFE VC BO v CEO CODE (V) ® I C V C E (S A T ) @ , C	OCR Scan		PDF
1.0 k mef 250 Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072 Text: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a	OCR Scan	semi-820 BYX22-400 BYX22-600 BYX22-800 BYX26-60 YX26-150 BYX36-1 BYX36-300 1.0 k mef 250 ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072	PDF
BC 641 Abstract: bc 207 npn BC190 bu 1011 ET 3005 h21e BU 208 BC140 BC190B bc107 Text: Silicon N PN transistors, general purpose continued Tam b = 25 <>C Transistors N P N silicium, usage général (suite) <5 v CEO Case ^tot (mW) (V) h2 lE VcER* h2 lE * VCE X ° min >C v CEsat (V) max ImA} ft (ns) (MHz) 'off* max max l C/lB (mA> min TSi 76	OCR Scan		PDF
diac D30 Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551 Text: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED	OCR Scan	OT-23 C-120, conventN1711 2N1893 2N2102 2N2218A 2N2219A 2N3019 2N3503 2N3700 diac D30 db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551	PDF

TRANSISTORS BC 225 Search Results

TRANSISTORS BC 225 Result Highlights (5)

TRANSISTORS BC 225 Datasheets Context Search

BC238

BC154

BC817W

Untitled

Untitled

BC807W

2N6218

2n6218

CDIL PN2222A

ip 2222A

2222A

bcw 94 b

2N4402

2N3906

Untitled

Untitled

Untitled

Untitled

629t

2N5449

2N5551YCECB

1.0 k mef 250

BC 641

diac D30